DOE OSTI2014
Growth of fully dense refractory thin films by means of physical vapor deposition (PVD) requires elevated temperatures T{sub s} to ensure sufficient adatom mobilities. Films grown with no external heating are underdense, as demonstrated by the open voids visible in cross-sectional transmission electron microscopy images and by x-ray reflectivity results; thus, the layers exhibit low nanoindentation hardness and elastic modulus values. Ion bombardment of the growing film surface is often used to enhance densification; however, the required ion energies typically extract a steep price in the form of residual rare-gas-ion-induced compressive stress. Here, the authors propose a PVD strategy for the growth of dense, hard, and stress-free refractory thin films at low temperatures; that is, with no external heating. The authors use TiN as a model ceramic materials system and employ hybrid high-power pulsed and dc magnetron co-sputtering (HIPIMS and DCMS) in Ar/N{sub 2} mixtures to grow dilute Ti{sub 1−x}Ta{sub x}N alloys on Si(001) substrates. The Ta target driven by HIPIMS serves as a pulsed source of energetic Ta{sup +}/Ta{sup 2+} metal–ions, characterized by in-situ mass and energy spectroscopy, while the Ti target operates in DCMS mode (Ta-HIPIMS/Ti-DCMS) providing a continuous flux of metal atoms to sustain a high deposition rate. Substrate bias V{sub s} is applied in synchronous with the Ta-ion portion of each HIPIMS pulse in order to provide film densification by heavy-ion irradiation (m{sub Ta} = 180.95 amu versus m{sub Ti} = 47.88 amu) while minimizing Ar{sup +} bombardment and subsequent trapping in interstitial sites. Since Ta is a film constituent, primarily residing on cation sublattice sites, film stress remains low. Dense Ti{sub 0.92}Ta{sub 0.08}N alloy films, 1.8 μm thick, grown with T{sub s} ≤ 120 °C (due to plasma heating) and synchronized bias, V{sub s} = 160 V, exhibit nanoindentation hardness H = 25.9 GPa and elastic modulus E = 497 GPa compared to 13.8 and 318 GPa for underdense Ti-HIPIMS/Ti-DCMS TiN reference layers (T{sub s} < 120 °C) grown with the same V{sub s}, and 7.8 and 248 GPa for DCMS TiN films grown with no applied bias (T{sub s} < 120 °C). Ti{sub 0.92}Ta{sub 0.08}N residual stress is low, σ = −0.7 GPa, and essentially equal to that of Ti-HIPIMS/Ti-DCMS TiN films grown with the same substrate bias.