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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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Instrument monitors air supplied by air ionizer and regulates ionizer to ensure net charge neutral. High-impedance electrometer and nulling control amplifier regulate output of air ionizer. Primarily intended to furnish ionized air having no net charge, instrument adaptable to generating air with positive or negative net charge is so desired. Useful where integrated circuit chips are manufactured, inspected, tested or assembled.
GaAs device technology has recently reached a new phase of rapid advancement, made possible by the improvement of the quality of GaAs bulk crystals. At the same time, the transition to the next generation of GaAs integrated circuits and optoelectronic systems for commercial and government applications hinges on new quantum steps in three interrelated areas: crystal growth, device processing and device-related properties and phenomena. Special emphasis is placed on the establishment of quantitative relationships among crystal growth parameters-material properties-electronic properties and device applications. The overall program combines studies of crystal growth on novel approaches to engineering of semiconductor material (i.e., GaAs and related compounds); investigation and correlation of materials properties and electronic characteristics on a macro- and microscale; and investigation of electronic properties and phenomena controlling device applications and device performance.
The development of technology for a 30 GHz low noise receiver utilizing GaAs FET devices exclusively is discussed. This program required single and dual-gate FET devices, low noise FET amplifiers, dual-gate FET mixers, and FET oscillators operating at Ka-band frequencies. A 0.25 micrometer gate FET device, developed with a minimum noise figure of 3.3 dB at 29 GHz and an associated gain of 7.4 dB, was used to fabricate a 3-stage amplifier with a minimum noise figure and associated gain of 4.4 dB and 17 dB, respectively. The 1-dB gain bandwidth of this amplifier extended from below 26.5 GHz to 30.5 GHz. A dual-gate mixer with a 2 dB conversion loss and a minimum noise figure of 10 dB at 29 GHz as well as a dielectric resonator stabilized FET oscillator at 25 GHz for the receiver L0. From these components, a hybrid microwave integrated circuit receiver was constructed which demonstrates a minimum single-side band noise figure of 4.6 dB at 29 GHz with a conversion gain of 17 dB. The output power at the 1-dB gain compression point was -5 dBm.
The strength of the interface between metals and aluminum oxide is an important factor in the successful operation of devices found throughout modern technology. One finds the interface in machine tools, jet engines, and microelectronic integrated circuits. The strength of the interface, however, should be strong or weak depending on the application. The diverse technological demands have led to some general ideas concerning the origin of the interfacial strength, and have stimulated fundamental research on the problem. Present status of our understanding of the source of the strength of the metal - aluminum oxide interface in terms of interatomic bonds are reviewed. Some future directions for research are suggested.
A monolithic, GaAs, dual mode, quadrature amplitude shift keying and quadrature phase shift keying transceiver with one and two billion bits per second data rate is being considered to achieve a low power, small and ultra high speed communication system for satellite as well as terrestrial purposes. Recent GaAs integrated circuit achievements are surveyed and their constituent device types are evaluated. Design considerations, on an elemental level, of the entire modem are further included for monolithic realization with practical fabrication techniques. Numerous device types, with practical monolithic compatability, are used in the design of functional blocks with sufficient performances for realization of the transceiver.
Sixty-four separate 50-kW peak-power transmitters are distributed throughout the 200 x 200 meter Poker Flat MST radar antenna array. The relative phase of each transmitter is automatically controlled by a 64-channel unit located in the main building at the edge of the antenna. The phase control unit is described. In operation the RF pulse from a transmitter coupler is power divided and compared with the phase reference in a mixer. The mixer output is low-pass filtered and sampled near the center of the resulting video pulse by an amplifying sample-and-hold integrated circuit. Phase control is effected by maintaining the mixer output pulse near zero volts by amplifying the sample-and-hold output which then drives the voltage-controlled phase shifter in the direction to null the mixer output. The voltage-controlled shifter achieves over 360 deg phase shift in the range from 0.7 to 24 volts. When the voltage into the shifter tracks to either voltage limit the wrap-around control resets the voltage so that the shifter is always operating within its control range.
A closed loop thermoelectric temperature control system is developed for stabilizing sensitive RF integrated circuits within a microwave radiometer to an accuracy of + or - 0.1 C over a range of ambient conditions from -20 C to +45 C. The dual mode (heating and cooling) control concept utilizes partial thermal isolation of the RF units from an instrument deck which is thermally controlled by thermoelectric coolers and thin film heaters. The temperature control concept is simulated with a thermal analyzer program (MITAS) which consists of 37 nodes and 61 conductors. A full scale thermal mockup is tested in the laboratory at temperatures of 0 C, 21 C, and 45 C to confirm the validity of the control concept. A flight radiometer and temperature control system is successfully flight tested on the NASA Skyvan aircraft.
The graphite strip heater zone melting recrystallization (ZMR) technique is described. The material properties of the ZMR films, and SOI device results are reviewed. Although our ZMR work is primarily motivated by integrated circuit applications, this work evolved in part from earlier research on laser crystallization of thick amorphous GaAs and Si films, which was undertaken with the goal of producing low cost photovoltaic materials. The ZMR growth process and its effect on the properties of the recrystallized films may contribute some insight to a general understanding of the rapid recrystallization of Si for solar cells. Adaptation of ZMR for solar cell fabrication is considered.
The current NASA program for 20 and 30 GHz monolithic microwave integrated circuit (MMIC) technology is reviewed. The advantages of MMIC are discussed. Millimeter wavelength MMIC applications and technology for communications systems are discussed. Passive and active MMIC compatible components for millimeter wavelength applications are investigated. The cost of a millimeter wavelength MMIC's is projected.
Photovoltaic arrays that convert solar energy into electrical energy can become a cost effective bulk energy generation alternative, provided that an adequate supply of low cost materials is available. One of the key requirements for economic photovoltaic cells is reasonably priced silicon. At present, the photovoltaic industry is dependent upon polycrystalline silicon refined by the Siemens process primarily for integrated circuits, power devices, and discrete semiconductor devices. This dependency is expected to continue until the DOE sponsored low cost silicon refining technology developments have matured to the point where they are in commercial use. The photovoltaic industry can then develop its own source of supply. Silicon material availability and market pricing projections through 1988 are updated based on data collected early in 1984. The silicon refining industry plans to meet the increasing demands of the semiconductor device and photovoltaic product industries are overviewed. In addition, the DOE sponsored technology research for producing low cost polycrystalline silicon, probabilistic cost analysis for the two most promising production processes for achieving the DOE cost goals, and the impacts of the DOE photovoltaics program silicon refining research upon the commercial polycrystalline silicon refining industry are addressed.
The design and test results of the 550-Mb/s, 110-Mb/s, and 27.5-Mb/s modems for the Advanced Communication Satellite Program are described. The TDMA/FDMA satellite environmental constraints have resulted in several unique features which include total acquisition times of 100 bit times and modem degradation of less than 1.5 dB at 10 to the -6th Pe. Key to the serial implementation of MSK is the resulting hardware simplicity and degradation insensitivity relative to conventionally implemented MSK and QPSK modems. The 110/27.5-Mb/s modems use an integrated circuit specifically developed for the program to perform the key carrier and clock-loop functions.
A new type of bolometer detector for the millimeter and submillimeter spectral range is described. The bolometer is constructed of silicon using integrated circuit fabrication techniques. Ion implantation is used to give controlled resistance vs temperature properties as well as extremely low 1/f noise contacts. The devices have been tested between 4.2 and 0.3 K. The best electrical NEP measured is 4 x 10 to the -16th W/Hz to the 1/2 at 0.35 K between 1- and 10-Hz modulation frequency. This device had a detecting area of 0.25 sq cm and a time constant of 20 msec at a bath temperature of 0.35 K.
Inverse development process yields fine details. Photomicrographic technique produces images of integrated-circuit chips. Technique based on dark-field illumination: (chip lit with bright central spot of light and photographed by light scattered or diffracted from spot. Reveals more about microstructure patterns related to photoresist masking than more conventional bright-field method.
Spring-loaded optical mounts maintain flatness and alinement of rigid, framed, or pellicle beam splitters over wide temperature range, despite differences in thermal expansion amoung materials. Mounts permit optical adjustments at ambient temperature even though optical system operated subsequently within few degrees of absolute zero. Mounts useful as holders for integrated-circuit master patterns, survey targets, vibrating membranes, noise- or pressure-sensing membranes, osmosis filters, and fuel-cell elements.
Proposed Reed-Solomon (RS) decoder assembled from very-large-scale integrated-circuit (VLSI) building blocks. Decoder exploits recursive forms in RS decoding algorithms. RS codes capable of correcting random or burst errors in telemetry and other data-communication signals. Because of small size and low power consumption, advantageous to employ several such decoders in parallel-processing scheme to increase decoding speed.
Container for semiconductor components not only protects them against mechanical damage but ensures they are not harmed by electrostatic discharges. Container holds components in fixed positions so they can be serialized and identified from their locations. Suitable for holding components during both storing and shipping. Originally developed for microwave diodes, container concept readily adaptable to transistors and integrated circuits.
Certain aspects of monolithic microwave integrated circuit (MMIC) interconnectivity were investigated. Considerations that lead to preserving the inherently reproducible characteristics of the MMIC are proposed. It is shown that at radio frequencies (RF) greater than 20 GHz, the transition from the MMIC device to other transmission media must be an accurate RF match. It is proposed that the RF match is sufficiently critical to include the transition as part of the delivered MMIC package. The model to analyze several transitions is presented. This model consists of a succession of abrupt discontinuities in printed circuit transmission lines. The analysis of these discontinuities is achieved by the Spectral Galerkin technique, to establish the modes and mode matching, to generate the generalized S parameters of the individual discontinuities. Preliminary results achieved with this method are presented. It is concluded that special effects should be coordinated by the active array antenna industry toward standardization of MMIC packaging and characterization.
The current status of monolithic microwave integrated circuits (MMICs) in phased array feeds is discussed from the point of view of cost performance, reliability, and design considerations. Transitions to MMICs, compatible antenna radiating elements and reliability considerations are addressed. Hybrid antennas, feed array antenna technology, and offset reflectors versus phased arrays are examined.