Origin of Electrical Property Deterioration with Increasing Mg Concentration in ZnMgO:Ga
Transparent conductive Ga-doped Zn{sub 1-x}Mg{sub x}O (ZnMgO:Ga) films were epitaxially grown via Pulsed Laser Deposition on sapphire by optimizing the substrate temperature and other parameters of deposition. Zn{sub 0.68}Mg{sub 0.31}Ga{sub 0.01}O/sapphire films deposited at 400 C have a Hall mobility ({mu}) of 9.2 {+-} 0.5 cm{sup 2} V{sup -1} s{sup -1} and a free electron density (n) of 1.79 x 10{sup 20} {+-} 0.06 x 10{sup 20} cm{sup -3}, yielding an electrical conductivity ({sigma}) = 262 {+-} 22 S/cm. Zn{sub 0.90}Mg{sub 0.09}Ga{sub 0.01}O/sapphire films, deposited under the same growth conditions, have similar crystalline quality, but significantly better electrical properties ({sigma} = 1450 {+-} 10 S/cm, {mu} = 24.5 {+-} 2.5 cm{sup 2} V{sup -1} s{sup -1}, n = 3.81 x 10{sup 20} {+-} 0.20 x 10{sup 20} cm{sup -3}). This comparison provides evidence of electrical property deterioration in doped ZnMgO bulk material with increasing Mg content, independent of crystalline quality. Electrical properties of ZnMgO:Ga are further deteriorated by the decrease of the crystalline quality. Polycrystalline Zn{sub 0.90}Mg{sub 0.09}Ga{sub 0.01}O/a-SiO{sub 2} samples deposited under identical conditions on amorphous silica substrates had both inferior crystal quality and inferior transport properties ({mu} = 2.5 {+-} 0.2 cm{sup 2} V{sup -1} s{sup -1}, n = 2.04 x 10{sup 20} {+-} 0.20 x 10{sup 20} cm{sup -3}, {sigma} = 80 {+-} 8 S/cm) compared to their epitaxial counterparts. Overall, the results of this study indicate that both bulk material properties and crystalline quality influence the electrical properties of single-phase ZnMgO:Ga thin films.