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At least 1,711 records · Page 95

A Fault Location Algorithm for Two-End Series-Compensated Double-Circuit Transmission Lines Using the Distributed Parameter Line Model

A new fault location algorithm for two-end series-compensated double-circuit transmission lines utilizing unsynchronized two-terminal current phasors and local voltage phasors is presented in this paper. The distributed parameter line model is adopted to take into account the shunt capacitance of the lines. The mutual coupling between the parallel lines in the zero-sequence network is also considered. The boundary conditions under different fault types are used to derive the fault location formulation. The developed algorithm directly uses the local voltage phasors on the line side of series compensation (SC) and metal oxide varistor (MOV). However, when potential transformers are not installed on the line side of SC and MOVs for the local terminal, these measurements can be calculated from the local terminal bus voltage and currents by estimating the voltages across the SC and MOVs. MATLAB SimPowerSystems is used to generate cases under diverse fault conditions to evaluating accuracy. The simulation results show that the proposed algorithm is qualified for practical implementation.

current phasors, distributed parameter line model,↗

Flux-based three-dimensional electrodynamic modeling approach to superconducting circuits and materials

Modeling the behavior of superconducting electronic circuits containing Josephson junctions is crucial for the design of superconducting information processors and devices. In this paper, we introduce DEC-QED, a computational approach for modeling the electrodynamics of superconducting electronic circuits containing Josephson junctions in arbitrary three-dimensional electromagnetic environments. DEC-QED captures the nonlinear response and induced currents in BCS superconductors and accurately captures phenomena such as the Meissner effect, flux quantization, and Josephson effects. Using a spatial coarse-graining formulation based on discrete exterior calculus (DEC), DEC-QED can accurately simulate transient and long-time dynamics in superconductors. Finally, the expression of the entire electrodynamic problem in terms of the gauge-invariant flux field and charges makes the resulting classical field theory suitable for second quantization.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Thermal verification testing of commercial printed-circuit boards for spaceflight

A method developed to verify commercial printed-circuit boards for a Shuttle orbital flight is discussed. The test sequence is based on early fault detection, desire to test the final assembly, and integration with other verification testing. A component thermal screening test is performed first to force flaws in design, workmanship, parts, processes, and materials into observable failures. Temperature definition and vibration tests are performed next. Final assembly testing is performed to simulate the Shuttle flight. An abbreviated thermal screening test is performed as a check after the vibration test, and then a complete thermal operational test is performed. The final assembly test finishes up with a burn-in of 100 h of trouble-free operation. Verification is successful when all components and final assemblies have passed each test. This method was very successful in verifying that commercial printed-circuit boards will survive in the Shuttle environment.

Foster, William M., II↗

Characteristics Of Ferroelectric Logic Gates Using a Spice-Based Model

A SPICE-based model of an n-channel ferroelectric field effect transistor has been developed based on both theoretical and empirical data. This model was used to generate the I-V characteristic of several logic gates. The use of ferroelectric field effect transistors in memory circuits is being developed by several organizations. The use of FFETs in other circuits, both analog and digital needs to be better understood. The ability of FFETs to have different characteristics depending on the initial polarization can be used to create logic gates. These gates can have properties not available to standard CMOS logic gates, such as memory, reconfigurability and memory. This paper investigates basic properties of FFET logic gates. It models FFET inverter, NAND gate and multi-input NAND gate. The I-V characteristics of the gates are presented as well as transfer characteristics and timing. The model used is a SPICE-based model developed from empirical data from actual Ferroelectric transistors. It simulates all major characteristics of the ferroelectric transistor, including polarization, hysteresis and decay. Contrasts are made of the differences between FFET logic gates and CMOS logic gates. FFET parameters are varied to show the effect on the overall gate. A recodigurable gate is investigated which is not possible with CMOS circuits. The paper concludes that FFETs can be used in logic gates and have several advantages over standard CMOS gates.

MacLeod, Todd C.↗

Triviality of quantum trajectories close to a directed percolation transition

Here we study quantum circuits consisting of unitary gates, projective measurements, and control operations that steer the system toward a pure absorbing state. Two types of phase transition occur as the rate of these control operations is increased: a measurement-induced entanglement transition, and a directed percolation transition into the absorbing state (taken here to be a product state). In this work, we show analytically that these transitions are generically distinct, with the quantum trajectories becoming disentangled before the absorbing state transition is reached, and we analyze their critical properties. We introduce a simple class of models where the measurements in each quantum trajectory define an effective tensor network (ETN)—a subgraph of the initial spacetime graph where nontrivial time evolution takes place. By analyzing the entanglement properties of the ETN, we show that the entanglement and absorbing-state transitions coincide only in the limit of the infinite local Hilbert-space dimension. Focusing on a Clifford model which allows numerical simulations for large system sizes, we verify our predictions and study the finite-size crossover between the two transitions at large local Hilbert space dimension. We give evidence that the entanglement transition is governed by the same fixed point as in hybrid circuits without feedback.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Surface participation and dielectric loss in superconducting qubits

We study the energy relaxation times (T{sub 1}) of superconducting transmon qubits in 3D cavities as a function of dielectric participation ratios of material surfaces. This surface participation ratio, representing the fraction of electric field energy stored in a dissipative surface layer, is computed by a two-step finite-element simulation and experimentally varied by qubit geometry. With a clean electromagnetic environment and suppressed non-equilibrium quasiparticle density, we find an approximately proportional relation between the transmon relaxation rates and surface participation ratios. These results suggest dielectric dissipation arising from material interfaces is the major limiting factor for the T{sub 1} of transmons in 3D circuit quantum electrodynamics architecture. Our analysis also supports the notion of spatial discreteness of surface dielectric dissipation.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Magnetic shielding of Hall thrusters at high discharge voltages

A series of numerical simulations and experiments have been performed to assess the effectiveness of magnetic shielding in a Hall thruster operating in the discharge voltage range of 300–700 V (I{sub sp} ≈ 2000–2700 s) at 6 kW, and 800 V (I{sub sp} ≈ 3000) at 9 kW. At 6 kW, the magnetic field topology with which highly effective magnetic shielding was previously demonstrated at 300 V has been retained for all other discharge voltages; only the magnitude of the field has been changed to achieve optimum thruster performance. It is found that magnetic shielding remains highly effective for all discharge voltages studied. This is because the channel is long enough to allow hot electrons near the channel exit to cool significantly upon reaching the anode. Thus, despite the rise of the maximum electron temperature in the channel with discharge voltage, the electrons along the grazing lines of force remain cold enough to eliminate or reduce significantly parallel gradients of the plasma potential near the walls. Computed maximum erosion rates in the range of 300–700 V are found not to exceed 10{sup −2} mm/kh. Such rates are ∼3 orders of magnitude less than those observed in the unshielded version of the same thruster at 300 V. At 9 kW and 800 V, saturation of the magnetic circuit did not allow for precisely the same magnetic shielding topology as that employed during the 6-kW operation since this thruster was not designed to operate at this condition. Consequently, the maximum erosion rate at the inner wall is found to be ∼1 order of magnitude higher (∼10{sup −1} mm/kh) than that at 6 kW. At the outer wall, the ion energy is found to be below the sputtering yield threshold so no measurable erosion is expected.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

X-ray Inspection Model Validation with Physical Dosimetry

A non-functional printed circuit board assembly was developed using ULTIboard and a simple computational transport model was created for use with the Monte Carlo software MCNP. EBT 3 film radiography was used to compare with Monte Carlo simulation to validate the board representation. The computational transport model was then revised to include connection pins, solder balls, highly attenuating internal structures, and copper trace distribution. Results from the revised model were compared to the EBT 3 films to observe improvements to dose profiles. It was found that this method was useful in verifying the placement of components, as the dose profiles were observed to follow the same trends. The experiment was then repeated using XRQA 2 films to achieve the same level of contrast with 1% the dose of EBT 3 films. It was found that high contrast may be achieved using these films to identify major issues with the model geometry, at a cost of dose profile accuracy. A second validation method was applied to the model using 37 CaF 2 thermoluminescent dosimeters (TLDs). TLD measurements were compared with the simplified and complex transport models to identify the features that have the greatest impact on simulation accuracy. The TLD calibration to CaF 2 was found to be accurate within 5.6%, while calibration to dose in Si was found to be accurate within 4.7%. Finally, it was observed that the accurate representation of solder balls and proper modeling of highly attenuating internal structures had the greatest impact on simulation accuracy.

61 RADIATION PROTECTION AND DOSIMETRY↗

Active learning of chemical reaction networks via probabilistic graphical models and Boolean reaction circuits

Discerning networks of many reactions among multiple interconverting species is challenging. Here, we present a reaction network identification methodology. Our methodology enumerates all stoichiometrically and chemically feasible reactions and requires statistical evidence from effluent concentrations for the inclusion or exclusion of each from the reaction network, contrasting with the commonly seen incremental approach and other work of relying heavily upon chemical intuition and assuming the reactions occurring. Using graph theory alongside an active learning design of experiments that propose maximally informative feeds, we identify the underlying reaction network with minimal laboratory runs. Here, we introduce chemistry-probabilistic graphical modeling and Boolean reaction circuits to statistically quantify which reactions occur from effluent concentrations. Our methodology accurately discerns active reactions, as showcased upon a laboratory network of cross-ketonization of furoic and lauric acid and validated upon simulated networks of thermal and CO 2 -assisted ethane dehydrogenation.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Towards utility-scale electronic structure with sample-based quantum bootstrap embedding

One of the main applications for which quantum computers are hoped to find utility is in simulating ground state energies and other observables of molecular chemical systems. The recently proposed sample-based diagonalization method is a readily implementable method for this task on current-day hardware using short circuit depths and has been demonstrated on as many as 85 qubits in recent studies. In this work, we combine the recently proposed quantum bootstrap embedding (QBE) method with sampled-based diagonalization (QBE-SQD) and present the first benchmarking study of the QBE method on real quantum hardware, ibm_pittsburgh, a Heron r3 processor with 156 qubits. Our test system is a hydrogen ring with 8 hydrogen atoms in the cc-pVDZ basis. We show that for this system, QBE-SQD using an active space of (8e, 19o) per fragment with a 43 qubit footprint produces a ground state energy accuracy which exceeds that of an SQD calculation with an (8e, 30o) active space with a 67 qubit footprint when using a comparable number of Slater determinants. This demonstrates that the use of quantum bootstrap embedding techniques is a promising path towards extending the capabilities of state-of-the-art quantum eigensolvers on near-term devices.

Bierman, Joel [North Carolina State University, Ra↗

Effect of parameter variations on the static and dynamic behaviour of a self-assembled quantum-dot laser using circuit-level modelling

We report a new circuit model for a self-assembled quantum-dot (SAQD) laser made of InGaAs/GaAs structures. The model is based on the excited state and standard rate equations, improves the previously suggested circuit models and also provides and investigates the performance of this kind of laser. The carrier dynamic effects on static and dynamic characteristics of a SAQD laser are analysed. The phonon bottleneck problem is simulated. Quantum-dot lasers are shown to be quite sensitive to the crystal quality outside and inside quantum dots. The effects of QD coverage factor, inhomogeneous broadening, the physical source of which is the size fluctuation of quantum dots formed by self-assembly of atoms, and cavity length on the SAQD laser characteristics are analysed. The results of simulation show that an increase in the cavity length and in the QD coverage factor results in the growth of the output power. On the other hand, an increase in the coverage factor and a degradation of inhomogeneous broadening lead to an increase in the modulation bandwidth. The effect of the QD height (cylindrical shape) and stripe width of the laser cavity on QD laser modulation is also analysed. (lasers)

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Comprehensive model for evaluating voltage losses and performance improvements in thin-film photovoltaic devices

Progress of state-of-the-art and next-generation thin-film photovoltaic devices is often stymied by open-circuit voltage (𝑉 oc ) that is significantly lower than theoretical and practical limits. Yet, effectively diagnosing the primary sources of voltage loss remains challenging. Herein, a sequence of device-level characterization techniques and simulations are employed to identify and rank loss mechanisms. For the research-based Cd⁡(Se,Te) device under study, most of the loss was at the front semiconductor heterointerface due to a clifflike conduction-band offset that lowered the recombination activation energy. Additional losses due to band tails were quantified by photoluminescence analysis. The latter provided the absorption coefficient and activation energy reduction associated with band tails as inputs to device models. Simulations showed that alleviating front-interface issues would improve 𝑉 oc , but it would then be limited by bulk recombination. Further improvement of the bulk would then lead to back-contact limitations. Reducing band tails is beneficial in any circumstance. In conclusion, this analysis provides guidance for reaching toward the radiative 𝑉 oc limit.

14 SOLAR ENERGY↗

Fail-Safe Logic Design Strategies Within Modern FPGA Architectures

Fail-safe computing refers to computing systems that revert to a non-operational safe state when a fault occurs. In this paper, we investigate a circuit level technique as mitigation for single event upsets (SEUs) and fault injection attacks on field programmable gate arrays (FPGAs), and analyze the effectiveness of the technique as a fail-safe monitor for an encryption algorithm. The propagation of fault effects through FPGA primitives including lookup tables (LUTs) and programmable interconnect points (PIPs) is assessed within an FPGA architecture created using an open source tool, and validated using fault injection experiments on an FPGA. The analysis reveals additional vulnerabilities exist within reconfigurable architectures over those in equivalent fail-safe application specific integrated circuit (ASIC), thus requiring a more elaborate network of redundant circuits and checking logic. The configuration memory bits (CMBs), which configure routing and designate logic functions within the LUTs of the FPGA, add complexity to fail-safe design strategies by introducing additional fault conditions and fault propagation paths. A resource-efficient fail-safe circuit design technique called DEsign for Fail-safe in reCONfigurable systems (DEFCON) is proposed. The benefits and limitations associated with DEFCON are described in the context of fault injection experiments carried out as simulations and in FPGA hardware.

Bhakta, Priya A. [Univ. of New Mexico, Albuquerque↗

Investigation of Timing Properties for an Event Driven with Access and Reset Decoder Readout Architecture for a Pixel Array

The large number of data generating sources (data channels) on a single chip requires appropriate techniques to manage a readout from these channels. One of the main methods is sharing a medium of transmission, which requires arbitration to avoid collisions or deadlocks. Existing solutions face several problems such as a dead time, unintended prioritization or metastability. That is why we decided to create a new readout architecture named EDWARD i.e., Event Driven with Access and Reset Decoder. The EDWARD architecture gets rid of the earlier mentioned problems and mitigates the other ones. However, due to the use of logic circuits outside a standard cell library, which are hard to characterize, we were challenged to perform an additional transient analysis to validate the architecture. Here we show a methodology and the results of the simulations. Based on the results obtained we can confirm the functional correctness of the system and plan the optimization of operating conditions in order to achieve better performance. Our goal is to use the EDWARD architecture in the future radiation detectors to be built at Brookhaven National Laboratory.

47 OTHER INSTRUMENTATION↗

QASMBench: A Low-Level Quantum Benchmark Suite for NISQ Evaluation and Simulation

The rapid development of quantum computing (QC) in the NISQ era urgently demands a low-level benchmark suite and insightful evaluation metrics for characterizing the properties of prototype NISQ devices, the efficiency of QC programming compilers, schedulers and assemblers, and the capability of quantum system simulators in a classical computer. In this work, we fill this gap by proposing a low-level, easy-to-use benchmark suite called QASMBench based on the OpenQASM assembly representation. It consolidates commonly used quantum routines and kernels from a variety of domains including chemistry, simulation, linear algebra, searching, optimization, arithmetic, machine learning, fault tolerance, cryptography, and so on, trading-off between generality and usability. To analyze these kernels in terms of NISQ device execution, in addition to circuit width and depth, we propose four circuit metrics including gate density, retention lifespan, measurement density, and entanglement variance, to extract more insights about the execution efficiency, the susceptibility to NISQ error, and the potential gain from machine-specific optimizations. Applications in QASMBench can be launched and verified on several NISQ platforms, including IBM-Q, Rigetti, IonQ and Quantinuum. For evaluation, we measure the execution fidelity of a subset of QASMBench applications on 12 IBM-Q machines through density matrix state tomography, comprising 25K circuit evaluations. In addition we also compare the fidelity of executions among the IBM-Q machines, the IonQ QPU and the Rigetti Aspen M-1 system.

97 MATHEMATICS AND COMPUTING↗

Prospects for Machine Learning and Pulse Shaping on the Scorpius Accelerator [Poster]

The Advanced Sources and Detectors (ASD) project aims to build Scorpius, a multi pulse linear induction accelerator capable of delivering a 1.4 kA electron beam at energies up to 24 MeV. One of the primary advancements of Scorpius is the use of solid state pulsed power (SSPP) to provide flexibility in pulse shaping by independently triggering 45 individual stages stacked in each of 984 line replaceable units (LRU), with 168 LRUs dedicated to the injector. By leveraging circuit modeling of each LRU stage, a machine learning model of the SSPP will be developed to allow for optimization of the pulse shape, including pulse flattening and reflection mitigation. Particle-in-cell simulations of Scorpius have, for example, demonstrated that reducing reflections during multi-pulse operation mitigates beam spill by preventing the production of off-energy electrons between pulses, thereby abating stimulated ion desorption from the wall and beam charge neutralization. This machine learning model will be validated and tuned with experimental data collected from the Scorpius injector and Integrated Test Stand

43 PARTICLE ACCELERATORS↗

Quantum Software Engineering (Dagstuhl Seminar 24512)

The Dagstuhl Seminar 24512 on "Quantum Software Engineering" was held from December 15 to 20, 2024. It brought together 26 participants from industry and academia from 13 different countries, including senior and junior researchers as well as practitioners in the field of Quantum Software Engineering. The aim of the seminar was to advance software engineering methods and tools for the engineering of hybrid quantum systems by promoting personal interaction and open discussion among researchers who are already working in this emerging area of knowledge. The first day of the seminar was devoted to the topic "When software engineering meets quantum mechanics", while the second day focused on "Quantum software engineering and its challenges." During both days, 16 invited presentations were given. The rest of the seminar was organized into three working groups to address the topics "Quantum Software Design, Modelling and Architecturing", "Adaptive Hybrid Quantum Systems", and "Quantum Software Quality Assurance". The seminar was a very fruitful experience for all participants both in terms of scientific outcomes and in terms of the personal relationships that were generated to jointly address future experiences.

97 MATHEMATICS AND COMPUTING↗

High density bit transition requirements versus the effects on BCH error correcting code

The design to achieve the required bit transition density for the Space Shuttle high rate multiplexes (HRM) data stream of the Space Laboratory Vehicle is reviewed. It contained a recommended circuit approach, specified the pseudo random (PN) sequence to be used and detailed the properties of the sequence. Calculations showing the probability of failing to meet the required transition density were included. A computer simulation of the data stream and PN cover sequence was provided. All worst case situations were simulated and the bit transition density exceeded that required. The Preliminary Design Review and the critical Design Review are documented. The Cover Sequence Generator (CSG) Encoder/Decoder design was constructed and demonstrated. The demonstrations were successful. All HRM and HRDM units incorporate the CSG encoder or CSG decoder as appropriate.

Ingels, F. M.↗