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At least 1,693 records · Page 94
All sourcesNASA NTRSDOE OSTI
DOE OSTI2012

Fabrication of single-walled carbon nanohorns containing iodine and cesium

Iodine and cesium atoms were encapsulated in single-walled carbon nanohorns (SWCNHs). Atom encapsulation was carried out with sequential plasma aided procedures which consisted of opening SWCNH tips with an oxygen plasma, atom insertion in an iodine-mixed or cesium-mixed argon plasma, and closing the open tip in an argon plasma. Results reveal that oxidation plays a role in the tip opening procedure, and capillary forces are the driving force for the permeation of the atoms through the open tip of the SWCNHs. The open tip of the atom inserted SWCNH can be closed under the ion irradiation. It demonstrated the fabrication process of encapsulating atoms in SWCNH by using the sequential plasma assisted processes.

74 ATOMIC AND MOLECULAR PHYSICS↗
DOE OSTI2013

An ultra-thin buffer layer for Ge epitaxial layers on Si

Using an Fe{sub 3}Si insertion layer, we study epitaxial growth of Ge layers on a Si substrate by a low-temperature molecular beam epitaxy technique. When we insert only a 10-nm-thick Fe{sub 3}Si layer in between Si and Ge, epitaxial Ge layers can be obtained on Si. The detailed structural characterizations reveal that a large lattice mismatch of {approx}4% is completely relaxed in the Fe{sub 3}Si layer. This means that the Fe{sub 3}Si layers can become ultra-thin buffer layers for Ge on Si. This method will give a way to realize a universal buffer layer for Ge, GaAs, and related devices on a Si platform.

36 MATERIALS SCIENCE↗
DOE OSTI2013

Mechanical properties of irradiated single-layer graphene

The mechanical properties of irradiated single-layer graphene sheets are determined as a function of inserted vacancy concentration. We find that the vacancy-induced crystalline-to-amorphous transition is accompanied by a brittle-to-ductile transition in the failure response of irradiated graphene sheets for inserted vacancy concentrations of 8%-12%. While point defects and larger voids appreciably degrade the strength of pristine graphene, we find that even heavily damaged samples ({approx}20% vacancies) exhibit tensile strengths of {approx}30 GPa, in significant excess of those typical of engineering materials. Our results suggest that defect engineering of graphene is feasible without incurring a complete loss of its desirable mechanical properties.

36 MATERIALS SCIENCE↗
DOE OSTI2013

Gain analysis of higher-order-mode amplification in a dielectric-implanted multi-beam traveling wave structure

A multi-beam traveling wave amplifier designed with an overmoded staggered double grating array was examined by small signal analysis combined with simulation. Eigenmode and S-parameter analyses show that the 2 cm long slow wave structure (SWS) has 1–5 dB insertion loss over the passband (TM{sub 31} mode) with ∼28% cold bandwidth. Analytic gain calculation indicates that in the SWS, TM{sub 31}-mode is amplified with 15–20 dB/beam at 64–84 GHz with three elliptical beams of 10 kV and 150 mA/beam, which was compared with particle-in-cell (PIC) simulations. PIC analysis on the analysis of instability with zero-input driving excitations demonstrated that background noises and non-operating lower order modes are noticeably suppressed by implanting equidistant dielectric absorbers; the overmoded structure only allowed the desired 3rd order mode to propagate in the structure. The designed circuit structure can be widely applied to multi-beam devices for high power RF generation.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2014

A high-current electron gun for the electron beam ion trap at the National Superconducting Cyclotron Laboratory

The Electron Beam Ion Trap (EBIT) in NSCL’s reaccelerator ReA uses continuous ion injection and accumulation. In order to maximize capture efficiency and minimize breeding time into high charge states, the EBIT requires a high-current/high current-density electron beam. A new electron gun insert based on a concave Ba-dispenser cathode has been designed and built to increase the current transmitted through the EBIT’s superconducting magnet. With the new insert, stable EBIT operating conditions with 0.8 A of electron beam have been established. The design of the electron gun is presented together with calculated and measured perveance data. In order to assess the experimental compression of the electron beam, a pinhole CCD camera has been set up to measure the electron beam radius. The camera observes X-rays emitted from highly charged ions, excited by the electron beam. Initial tests with this camera setup will be presented. They indicate that a current density of 640 A/cm{sup 2} has been reached when the EBIT magnet was operated at 4 T.

43 PARTICLE ACCELERATORS↗
DOE OSTI2014

Application of the Ta liner technique to produce Ca beams at INFN-Legnaro National Laboratories (INFN-LNL)

The ECR ion sources are able to produce a wide variety of highly charged metallic ion beams thanks to the development of different techniques (ovens, sputtering, direct insertion, metal ions from volatile compounds (MIVOC)). In the case of the ovens, the sticking of the hot vapors on the surface of the plasma chamber leads to high material consumption rates. For elements like Ca, a tantalum liner inserted inside the chamber can be used to limit this phenomenon. The modeling of temperature distribution inside the chamber with and without the liner was carried out with COMSOL-multiphysics code. Results of simulation and the comparison with experiments performed at INFN-Legnaro National Laboratories with Ca beams are discussed.

43 PARTICLE ACCELERATORS↗
DOE OSTI2013

A real-time intercepting beam-profile monitor for a medical cyclotron

There is a lack of real-time continuous beam-diagnostic tools for medical cyclotrons due to high power deposition during proton irradiation. To overcome this limitation, we have developed a profile monitor that is capable of providing continuous feedback about beam shape and current in real time while it is inserted in the beam path. This enables users to optimize the beam profile and observe fluctuations in the beam over time with periodic insertion of the monitor.

43 PARTICLE ACCELERATORS↗
DOE OSTI2013

Effect of electron collecting metal oxide layer in normal and inverted structure polymer solar cells

We performed a systematic study of the effect of electron collecting metal oxide layer on the performance of P3HT: PCBM solar cells. Zinc oxide (ZnO) or titanium dioxide (TiO{sub 2}) buffer layers were prepared by either e-beam evaporation or solution processing method. We also compared the photovoltaic performance of inserting the buffer layer between indium tin oxide (ITO) and the polymer layer for the inverted structure (ITO/ ZnO or TiO{sub 2}/P3HT:PCBM/V{sub 2}O{sub 5}/Au) as well as inserting the buffers layers between the polymer and the aluminum electrode for the conventional structure (ITO/V{sub 2}O{sub 5}/P3HT:PCBM/ZnO or TiO{sub 2}/Al). The results are shown in detail.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2013

Design methodology and performance analysis of a wideband 90° phase switch for radiometer applications

This paper presents the analysis, design, and characterization of a wideband 90° phase switch in Ka-band. The phase switch is based on two microstrip bandpass filters in which the commutation is performed by a novel single-pole double-throw (SPDT) switch. The analysis of π-network bandpass filters is provided, obtaining the phase difference and amplitude imbalance between filters and their scattering parameters; tested results show an average phase difference of 88.9° ± 5° and an amplitude imbalance of 0.15 dB from 24 to 37 GHz. The new broadband SPDT switch is based on a coplanar waveguide-to-slotline-to-microstrip structure, which enables a full planar integration with shifting branches. PIN diodes are used to perform the switching between outputs. The SPDT shows isolation better than 19 dB, insertion loss of around 1.8 dB, and return loss better than 15 dB. The full integration of the phase switch achieves a return loss better than 11 dB and insertion loss of around 4 dB over the band 26–36 GHz, with an average phase difference of 87.1° ± 4° and an average amplitude imbalance of 0.3 dB. It provides an excellent performance for this frequency range, suitable for radio-astronomy receivers.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2014

New vertical cryostat for the high field superconducting magnet test station at CERN

In the framework of the R and D program for new superconducting magnets for the Large Hadron Collider accelerator upgrades, CERN is building a new vertical test station to test high field superconducting magnets of unprecedented large size. This facility will allow testing of magnets by vertical insertion in a pressurized liquid helium bath, cooled to a controlled temperature between 4.2 K and 1.9 K. The dimensions of the cryostat will allow testing magnets of up to 2.5 m in length with a maximum diameter of 1.5 m and a mass of 15 tons. To allow for a faster insertion and removal of the magnets and reducing the risk of helium leaks, all cryogenics supply lines are foreseen to remain permanently connected to the cryostat. A specifically designed 100 W heat exchanger is integrated in the cryostat helium vessel for a controlled cooling of the magnet from 4.2 K down to 1.9 K in a 3 m{sup 3} helium bath. This paper describes the cryostat and its main functions, focusing on features specifically developed for this project. The status of the construction and the plans for assembly and installation at CERN are also presented.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2014

Influence of the interface on the magnetic properties of ferromagnetic ultrathin films with various adjacent copper thicknesses

The interface and magnetic properties of two series of films with Ta(5 nm)/Fe{sub 20}Ni{sub 80}Nd{sub 0.017}(3 nm)/Cu(t nm) and Ta(5 nm)/Cu(t nm)/Fe{sub 50}Co{sub 50}Gd{sub 0.07}(3 nm)/Cu(2 nm) structures have been investigated by atomic force microscopy, vibrating sample magnetometer, and ferromagnetic resonance (FMR). The roughness of all films increases with increasing copper thickness, which causes the different grain sizes in the surface of films. The coercivity of FeCo-Gd films increases with increasing thickness of inserted Cu layer while decreases with increasing thickness of Cu capping layer for FeNi-Nd films. FMR linewidth exhibits huge dependence on the thickness of inserted Cu layer for FeCo-Gd films, increasing from 2270 to 3680 Oe, which comes from the additional contribution of effect of the two-magnon scattering. And the thickness of Cu capping layer shows also an influence on FMR linewidth of FeNi-Nd films, increasing from 190 to 320 Oe, which mainly comes from intrinsic FMR linewidth and plus minor inhomogeneous broadening. All of these extrinsic linewidth broadening are related to the interface roughness.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Thermally stable perpendicular magnetic anisotropy features of [Co/Pd]{sub m} multilayer matrix integrated with [CoO/Pd]{sub n} bottom layer

We evaluated the perpendicular magnetic anisotropy (PMA) features of a hybrid [CoO/Pd]{sub 2}/[Co/Pd]{sub 7} multilayer (ML) matrix under annealing in which the [CoO/Pd]{sub 2} bottom layer was inserted. Annealing allowed for the diffusion of oxygen atoms existing in the inserted [CoO/Pd]{sub 2} layer, leading to an atomic structural reconfiguration event. The hybrid matrix was crucial to result in a higher effective anisotropy energy (3.40 Merg/cc) than an ordinary [Co/Pd]{sub 7} ML matrix (1.25 Merg/cc) under annealing at 450 °C. X-ray photoelectron spectroscopy confirmed the presence of Co-O bonding states and annealing dependent oxygen atom diffusion. The possible nature of the enhanced PMA features is discussed.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2014

Distinguishing triplet energy transfer and trap-assisted recombination in multi-color organic light-emitting diode with an ultrathin phosphorescent emissive layer

An ultrathin layer of deep-red phosphorescent emitter tris(1-phenylisoquinoline) iridium (III) (Ir(piq){sub 3}) is inserted within different positions of the electron blocking layer fac-tris (1-phenylpyrazolato-N,C{sup 2′})-iridium(III) (Ir(ppz){sub 3}) to distinguish the contribution of the emission from the triplet exciton energy transfer/diffusion from the adjacent blue phosphorescent emitter and the trap-assisted recombination from the narrow band-gap emitter itself. The charge trapping effect of the narrow band-gap deep-red emitter which forms a quantum-well-like structure also plays a role in shaping the electroluminescent characteristics of multi-color organic light-emitting diodes. By accurately controlling the position of the ultrathin sensing layer, it is considerably easy to balance the white emission which is quite challenging for full-color devices with multiple emission zones. There is nearly no energy transfer detectable if 7 nm thick Ir(ppz){sub 3} is inserted between the blue phosphorescent emitter and the ultrathin red emitter.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Initial and secondary oxidation products on the Si(111)-(7 × 7) surface identified by atomic force microscopy and first principles calculations

We investigate the initial and secondary oxidation products on the Si(111)-(7 × 7) surface at room-temperature using atomic force microscopy (AFM) and density functional theory calculations. At the initial oxidation stages, we find that there are two types of bright spots in AFM images. One of them is identified as a Si adatom with one O atom inserted into one of the backbonds, while the other is ascribed to a Si adatom with two inserted O atoms. We observe that the latter one turns into the secondary oxidation product by a further coming O{sub 2} molecule, which appears as a more protruded bright spot. The atomic configuration of this product is identified as Si adatom whose top and all three backbonds make bonds with O atoms. The appearances of initial and secondary oxidation products are imaged as bright and dark sites by scanning tunneling microscopy, respectively. It is revealed that AFM gives us the topographic information close to the real atomic corrugation of adsorbed structures on the semiconductor surfaces.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Theoretical study of defect formation during the initial stages of native-oxide growth on GaSb (001)

The formation of defects during the initial stages of native-oxide growth on the GaSb (001)-α(4 × 3) surface has been studied computationally using spin-unrestricted density functional theory. It is found that insertion into a Ga-Sb adatom dimer to form a peroxo Ga-O-O-Sb bridge is the most energetically favorable process with insertion into Ga-Sb back-bonds being somewhat less so. A Ga-O-O-Ga bridge between dimers is also favorable, but Sb-O-O-Sb bridges show little if any stability. In the course of analyzing molecular adsorption, a particularly reactive site has been identified that leads to O{sub 2} dissociation with little or no barrier. This process is initiated in the vicinity of an Sb-Sb dimer in the terminating layer and leads to sub-surface Ga and Sb defect sites (i.e., coordinatively unsaturated atoms) and to strained Ga-Sb bonds that may be susceptible to further O{sub 2} attack. However, the defects formed in these reactions do not produce states in the gap.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Resistive switching of a TaO{sub x}/TaON double layer via ionic control of carrier tunneling

Resistance random access memory (RRAM) is an attractive candidate for future non-volatile memory due to its superior features. As the oxide thickness is scaled down, the charge transport mechanism is also subject to the transition from hopping to tunneling dominant process, which is critically related to the interfacial electronic band structure. A TaO{sub x}/TaON double layer-based RRAM is fabricated and characterized in this work. Upon TaON insertion at the lower interface, the improved switching behavior is observed. The TaON at the bottom electrode interface blocks oxygen vacancy percolation due to strong N-O bonds and also modifies interfacial band alignment to lower the injected electron energy from bottom electrode due to higher tunneling barrier height than that of TaO{sub x}/Pt. This study suggested that a defect-minimized insertion layer like TaON with a proper interfacial band alignment is pivotal in RRAM for the effective ionic control of carrier tunneling resulting in non-linear I-V behavior with improved properties.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2014

Unit-cell thick BaTiO{sub 3} blocks octahedral tilt propagation across oxide heterointerface

We fabricated SrRuO{sub 3}/BaTiO{sub 3}/GdScO{sub 3} heterostructures in which the BaTiO{sub 3} layer is one unit cell thick by pulsed laser deposition and elucidated how the BaTiO{sub 3} layer influences structural and magneto-transport properties of the SrRuO{sub 3} layer through octahedral connections across the heterointerface. Our X-ray-diffraction-based structural characterizations show that while an epitaxial SrRuO{sub 3} layer grown directly on a GdScO{sub 3} substrate is in the monoclinic phase with RuO{sub 6} octahedral tilts, a one-unit-cell-thick BaTiO{sub 3} layer inserted between SrRuO{sub 3} and GdScO{sub 3} stabilizes the tetragonal SrRuO{sub 3} layer with largely reduced RuO{sub 6} tilts. Our high-angle annular dark-field and annular bright-field scanning transmission electron microscopy observations provide an atomic-level view of the octahedral connections across the heterostructure and reveal that the BaTiO{sub 3} layer only one unit cell thick is thick enough to stabilize the RuO{sub 6}-TiO{sub 6} octahedral connections with negligible in-plane oxygen atomic displacements. This results in no octahedral tilts propagating into the SrRuO{sub 3} layer and leads to the formation of a tetragonal SrRuO{sub 3} layer. The magneto-transport property characterizations also reveal a strong impact of the octahedral connections modified by the inserted BaTiO{sub 3} layer on the spin-orbit interaction of the SrRuO{sub 3} layer. The SrRuO{sub 3} layer on BaTiO{sub 3}/ GdScO{sub 3} has in-plane magnetic anisotropy. This is in contrast to the magnetic anisotropy of the monoclinic SrRuO{sub 3} films on the GdScO{sub 3} substrate, in which the easy axis is ∼45° to the film surface normal. Our results demonstrate that the one-unit-cell-thick layer of BaTiO{sub 3} can control and manipulate the interfacial octahedral connection closely linked to the structure-property relationship of heterostructures.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Crosstalk elimination in the detection of dual-beam optical tweezers by spatial filtering

In dual-beam optical tweezers, the accuracy of position and force measurements is often compromised by crosstalk between the two detected signals, this crosstalk leading to systematic and significant errors on the measured forces and distances. This is true both for dual-beam optical traps where the splitting of the two traps is done by polarization optics and for dual optical traps constructed by other methods, e.g., holographic tweezers. If the two traps are orthogonally polarized, most often crosstalk is minimized by inserting polarization optics in front of the detector; however, this method is not perfect because of the de-polarization of the trapping beam introduced by the required high numerical aperture optics. Here we present a simple and easy-to-implement method to efficiently eliminate crosstalk. The method is based on spatial filtering by simply inserting a pinhole at the correct position and is highly compatible with standard back focal plane photodiode based detection of position and force. Our spatial filtering method reduces crosstalk up to five times better than polarization filtering alone. The effectiveness is dependent on pinhole size and distance between the traps and is here quantified experimentally and reproduced by theoretical modeling. The method here proposed will improve the accuracy of force-distance measurements, e.g., of single molecules, performed by dual-beam optical traps and hence give much more scientific value for the experimental efforts.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗