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At least 1,693 records · Page 94
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

Study of electro-physical properties of CsPbBr3 perovskite single crystals

Methods have been developed for the synthesis and growth of lead halide perovskites CsPbBr3, which can be used as detectors of optical, X-ray and gamma-radiation. Single crystals of these compounds were grown by the Bridgman method. The melt temperature was 580 °C, the gradient at the crystallization front was 5 K/cm, and the ampoule lowering speed was 3 mm/hour. In this work, the electro-physical properties of the inorganic perovskite CsPbBr3 were investigated. Crystals for research were cut from the beginning and end of the ingot. The optical absorption spectra were measured depending on the crystal thickness and temperature, the differential resistivity dif and the product  were determined from the I-V characteristics. It was established that dif practically does not change for samples made from the beginning and the end of the ingot, and is dif  21010 Ωcm at 100 V and 293 K.

Sklyarchuk, V.↗
DOE OSTI2021

Substrate-Controlled Electronic Properties of Perovskite Layer in Lateral Heterojunction Configuration

In this work, we fabricated halide perovskite-based lateral heterojunction devices with nickel oxide/titanium oxide all back contacts, allowing us to access the perovskite surface directly for analysis with various advanced techniques, including ultraviolet and X-ray photoemission spectroscopy (UPS/XPS), Kelvin probe force microscopy (KPFM), and surface photovoltage (SPY), to discern the role of selective contacts. Specifically, by tuning of the selectivity of the contacts, e.g., through varying the level of nickel oxidation, we show that the selectivity of the contacts induces a gradient in carrier concentration across the surface of the active layer that is connected to carrier extraction at the buried interface and hence to device functionality.

carrier concentration↗
DOE OSTI2021

In-Operando Characterization of P-I-N Perovskite Solar Cell Under Reverse Bias

A solar module is often exposed to a variety of intensity and uniformity illumination conditions throughout a day. In the field, objects or dirt can block light from hitting the module creating a partial shading event. When a partial shading event occurs the module power point tracking system will typically push the shaded cells into reverse bias in order to avoid the current loss from the other series connected illuminated cells. When perovskite solar cells are operated in reverse bias, electrochemical reactions can occur, leading to both reversible and irreversible performance losses. Excess holes generated by reverse bias cause and push the oxidation reaction of halide ions from the lattice to neutral halogen interstitial. Small interstitial halogen atoms can diffuse across the device and potentially move from the perovskite layer and into the transport layers, shifting the fermi levels in the devices. In this investigation we utilize cross-sectional kelvin probe atomic force microscopy to map the band energetics of perovskite solar cells during reverse bias. We observe a 150 meV decrease in the work function of the C 60 . This leads to a decrease of 150 mV and 4 mA/cm 2 in V oc and in J sc respectively. Finally, we discuss methods to prevent this irreversible degradation after a perovskite device is held under reverse bias.

fullerene↗
DOE OSTI2021

Proton Radiation Tolerance of Wide and Narrow Band Gap Perovskite Solar Cells

Two different single junction mixed organic-inorganic halide perovskite solar cells (PSCs) were assessed for their tolerance to high energy proton radiation. Both the narrow band gap mixed tin-lead iodide and wide band gap lead iodide-bromide show remarkable tolerance for fluences up to 1x10 11 p/cm 2 . Both materials show a retention of open circuit voltage and decrease in dark current densities indicating minimal effect on SRH recombination that typically plagues traditional III-V based solar cells. Additionally, a control device that was processed without the perovskite absorber layer showed better diode characteristics and lower dark current densities after proton irradiation. The tolerance of these perovskite as a class of materials is promising for multijunction tandem flexible photovoltaic devices.

perovskite↗
DOE OSTI2021

Blade-Coated Electron Transport Layers to Enable Scalable Perovskite Photovoltaics

With substantial improvements in efficiency of organic-inorganic halide perovskite solar cells (PSCs), attention has shifted to scale and commercial viability. While deposition of the perovskite absorber layer has been demonstrated using high throughput blade coating and even roll-to-roll printing, associated transport layers are often deposited using energy- and cost-intensive methods such as thermal evaporation. Here, we present an ambient process to blade coat mixed fullerene and bathocuproine (BCP) electron transport layers (ETLs) in inverted PSCs for low-cost, high throughput, scalable devices demonstrating efficiencies matching evaporated methods and >15% for device areas of 1 cm2.

bathocuproine↗
DOE OSTI2023

In-Situ Photostability Analysis of Perovskite Solar Cells by Time-Evolving Photoluminescence Imaging

In this work we investigate reversible metastabilities and irreversible degradation due to light soaking of triple-cation mixed-halide perovskite p-i-n solar cells. We use spatially resolved luminescence imaging to document the spatial inhomogeneities that exist even in high-performance devices with median efficiencies >20%. We monitor light-soaking degradation in-situ using time-evolving photoluminescence images, electro-luminescence images, and transient photovoltage. Post-stress measurements of external quantum efficiency and Kelvin- probe force microscopy suggest that long-term degradation primarily affects electrode interfaces rather than the absorber layer.

electroluminescence↗
DOE OSTI2024

Reverse-Bias Resilience of Monolithic Perovskite/Silicon Tandem Solar Cells

Metal halide perovskites have rapidly enabled a range of high-performance photovoltaic technologies. However, catastrophic failure under reverse voltage bias hinders their commercialization. In this work, we demonstrate that by employing a monolithic perovskite/silicon tandem structure, the perovskite subcell can be effectively protected by the silicon subcell under reverse bias, owing to the low reverse-bias diode current of the silicon subcell. As a result, the tested perovskite/silicon tandem devices show superior reverse-bias resilience compared to perovskite single-junction devices in both long-term reverse voltage biasing tests at the single-cell level and partial shading tests at the module level. These results highlight that, compared to other perovskite technologies, monolithic perovskite/silicon tandems are at a higher technology readiness level in terms of tackling the reverse-bias and partial shading challenge, which is a considerable advantage towards commercialization.

commercialization↗
DOE OSTI2024

In-Situ Luminescence Imaging of Perovskite Solar Cells Demonstrates Increasing Spatial Nonuniformity Upon Light-Soaking Degradation

In this work we investigate degradation rates of triplecation mixed-halide perovskite p-i-n solar cells. We present an accelerated stress testing procedure using periodic blue light-soaking at elevated temperatures until devices reach ~80% of their initial efficiency. We track light-induced degradation via in-situ: photoluminescence (PL), current-voltage (I-V) curves, and transient photovoltage. Devices underwent 165 hours of light bias at 65degrees C. Results suggest that spatial uniformity in PL intensity decreases as device degradation increases. This investigation lays the groundwork to address the current gap in understanding the interplay between device performance and the evolution of macroscopic features in perovskite solar cells. Thus, we believe spatial characterization techniques will play a crucial role in the commercialization of perovskite solar cells.

imaging↗
DOE OSTI2020

Structure and stability of alkali gallates structurally reminiscent of hollandite

Abstract Single crystals of CsGa 7 O 11 , RbGa 7 O 11 , and RbGa 4 In 5 O 14 were grown from alkali halide melts and their structures were characterized by single crystal and powder X‐ray diffraction. CsGa 7 O 11 and RbGa 7 O 11 adopt the same structure type, reminiscent of the hollandite structure type, as it contains nearly rectangular channels made up of two dimers of edge‐sharing GaO 6 octahedra, and two corner‐sharing octahedron/tetrahedron pairs. The structure of RbGa 4 In 5 O 14 is more complex and is comprised of indium octahedra, gallium trigonal bipyramids, and gallium tetrahedra, and contains similar sized tunnels as CsGa 7 O 11 and RbGa 7 O 11 . CsGa 7 O 11 and RbGa 4 In 5 O 14 were further characterized by TGA, ion exchange experiments, and DFT studies revealing that both structures are thermodynamically stable up to 850°C; however, CsGa 7 O 11 decomposes to GaO(OH) xH 2 O when heated in warm aqueous solutions. CsGa 7 O 11 undergoes ion exchange in both an aqueous solution of RbCl and a RbNO 3 melt, as predicted by DFT studies, where the ion exchange is more extensive in the RbNO 3 melt.

Juillerat, Christian A.↗
DOE OSTI2024

Leveraging Additive Manufacturing to Fabricate High Temperature Alloys With Co-Designed Mechanical Properties and Environmental Resistance

A paradigm shift in the traditional sequential design approaches is critically essential to create application-specific hierarchical and multifunctional materials with superior long-term performance for next-generation energy technologies involving extreme environments. In the current work, we aim to leverage the flexibility and geometric/compositional complexity offered by additive manufacturing to demonstrate this new approach by codesigning a compositionally graded Ni-based alloy for molten salts\sCO 2 heat exchangers to enable mitigation of environmental degradation of surfaces exposed to molten halide salts, while simultaneously suppressing the consequent deterioration in mechanical stability. Further, thermokinetic modeling describing the underlying physics of thermally- and environmentally induced spatiotemporal compositional and microstructural evolution will be employed to predict the parameter space of material deposition processes and precisely identify the required composition gradient. Preliminary corrosion and mechanical testing of the dual material demonstrated the potential of the material to replace existing solid solution strengthened materials for this application.

36 MATERIALS SCIENCE↗
DOE OSTI2020

ALLOY SELECTION AND C-276 CODE DESIGN VALUE EXTENSION FOR ADVANCED MOLTEN SALT TECHNOLOGY TEST FACILITIES EXPERIMENTATION

Molten halide salts are being considered as working fluids for nuclear and concentrated solar power applications. High temperature molten fluoride and chloride salts are known to preferentially attack and deplete Cr in alloys, which leads to the use of high-Ni lower-Cr alloys in test facilities for advanced Molten Salt Technology. Alloys 600 and C-276 are two commercially available Ni alloys that have moderate Cr contents and are qualified to the maximum temperature of 649°C and 677°C (1,200°F and 1,251°F), respectively, in the Boiler and Pressure Vessel Code. Both alloys have good corrosion resistance to acids, are resistant to stress-corrosion cracking, and have long track records of use in the chemical industry. Comparatively, Alloy C-276 has a similar Cr content but much higher allowable stresses for temperatures greater than 600°C (1,112°F). Therefore, it has been considered as a structural material for test facilities that require operations at 700°C (1,292°F) or greater to develop high-temperature Molten Salt Technology. To meet the requirements, the current code design values were extended based on some experimental data. Analysis showed that above current Codified maximum temperature, strength of the alloy is mainly controlled by creep rupture life under the average stress, although the Sc creep rate criterion is close to the Favg.Savg rupture criterion. This paper presents the intended test facilities and the design requirements, alloy selection considerations, literature review, data analysis, and proposed allowable stress extension based on some creep test data for C-276 at temperatures greater than 677°C (1,251°F). Further research activities are also briefly mentioned.

Ren, Weiju↗
DOE OSTI2020

Artificial illumination identification from an unmanned aerial vehicle

Artificial illumination identification within images is a useful tool for many applications. Performing such identification allows for an estimation of the illumination source spectrum, which in turn can be used for additional applications ranging from spectral detection and exploitation to statistics about nighttime light usage. Illumination identification has been performed in laboratory settings but not from an unmanned aerial vehicle (UAV) platform. Here, we test the feasibility of using a UAV and commercial off-the-shelf multispectral imaging sensor to perform such artificial illumination identification through linear discriminant analysis using nighttime UAV images. The results are very promising, showing source classification accuracies of 83.3%, 92.3%, 100%, and 100% for the incandescent, light-emitting diode, high pressure sodium, and metal halide illumination sources, respectively. We show that the information gained from the source identification can be further used to inform additional analysis, such as spectral identification. The high resolution of UAV imaging techniques combined with the knowledge of the illumination source can lead to better exploitation of such nighttime data for many applications.

42 ENGINEERING↗
DOE OSTI2023

CsPbBr3 perovskite single crystals for X- and -radiation detectors

Methods were developed for the synthesis and growth of halide lead perovskites CsPbBr3, which can be used as detectors of optical, X-ray, and -radiation. The growth of single crystals was carried out by the Bridgman method in quartz ampoules using zone-refined starting material. The electro-physical properties of the inorganic perovskite lead cesium tribromide CsPbBr3 were studied. Two types of structures with Cr/CsPbBr3/Ni rectifying and Ni/CsPbBr3/Ni ohmic contacts were fabricated. The resistivity of (  7×109 Ohmcm), and the activation energy of the dark conductivity (E  0.8 eV) were determined. From the measurements of the optical transmission spectra, the CsPbBr3 energy gap at 300 K was found to be Еg = 2.27 eV. The temperature dependence of the forbidden gap (Eg(T) = 2.4 - 4*10-4 T, eV) was also determined. A significant increase in photosensitivity for the Cr/CsPbBr3/Ni structure was observed at elevated temperatures. The Cr/CsPbBr3/Ni structures were shown to be sensitive to -radiation. The FWHM of the energy resolution for 241Am source was measured to be 15.8 keV.

Sklyarchuk, V.↗
DOE OSTI2020

A chiral switchable photovoltaic ferroelectric 1D perovskite

Spin and valley degrees of freedom in materials without inversion symmetry promise previously unknown device functionalities, such as spin-valleytronics. Control of material symmetry with electric fields (ferroelectricity), while breaking additional symmetries, including mirror symmetry, could yield phenomena where chirality, spin, valley, and crystal potential are strongly coupled. Here we report the synthesis of a halide perovskite semiconductor that is simultaneously photoferroelectricity switchable and chiral. Spectroscopic and structural analysis, and first-principles calculations, determine the material to be a previously unknown low-dimensional hybrid perovskite (R)-(-)-1-cyclohexylethylammonium/(S)-(+)-1 cyclohexylethylammonium) PbI 3 . Optical and electrical measurements characterize its semiconducting, ferroelectric, switchable pyroelectricity and switchable photoferroelectric properties. Temperature dependent structural, dielectric and transport measurements reveal a ferroelectric-paraelectric phase transition. Circular dichroism spectroscopy confirms its chirality. The development of a material with such a combination of these properties will facilitate the exploration of phenomena such as electric field and chiral enantiomer–dependent Rashba-Dresselhaus splitting and circular photogalvanic effects

36 MATERIALS SCIENCE↗
DOE OSTI2020

Giant isotope effect on phonon dispersion and thermal conductivity in methylammonium lead iodide

Lead halide perovskites are strong candidates for high-performance low-cost photovoltaics, light emission, and detection applications. A hot-phonon bottleneck effect significantly extends the cooling time of hot charge carriers, which thermalize through carrier–optic phonon scattering, followed by optic phonon decay to acoustic phonons and finally thermal conduction. To understand these processes, we adjust the lattice dynamics independently of electronics by changing isotopes. We show that doubling the mass of hydrogen in methylammonium lead iodide by replacing protons with deuterons causes a large 20 to 50% softening of the longitudinal acoustic phonons near zone boundaries, reduces thermal conductivity by ~50%, and slows carrier relaxation kinetics. Phonon softening is attributed to anticrossing with the slowed libration modes of the deuterated molecules and the reduced thermal conductivity to lowered phonon velocities. Our results reveal how tuning the organic molecule dynamics enables control of phonons important to thermal conductivity and the hot-phonon bottleneck.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Deciphering the effect of traps on electronic charge transport properties of methylammonium lead tribromide perovskite

Halide perovskites have undergone remarkable developments as highly efficient optoelectronic materials for a variety of applications. Several studies indicated the critical role of defects on the performance of perovskite devices. However, the parameters of defects and their interplay with free charge carriers remain unclear. In this study, we explored the dynamics of free holes in methylammonium lead tribromide (MAPbBr 3 ) single crystals using the time-of-flight (ToF) current spectroscopy. By combining ToF spectroscopy and Monte Carlo simulation, three energy states were detected in the bandgap of MAPbBr 3 . In addition, we found the trapping and detrapping rates of free holes ranging from a few microseconds to hundreds of microseconds. Contrary to previous studies, we revealed a strong detrapping activity of traps. We showed that these traps substantially affect the transport properties of MAPbBr 3 , including mobility and mobility-lifetime product. Our results provide an insight on charge transport properties of perovskite semiconductors.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Reconfiguring band-edge states and charge distribution of organic semiconductor–incorporated 2D perovskites via pressure gating

Two-dimensional (2D) semiconductor heterostructures are key building blocks for many electronic and optoelectronic devices. Reconfiguring the band-edge states and modulating their interplay with charge carriers at the interface in a continuous manner have long been sought yet are challenging. Here, using organic semiconductor–incorporated 2D halide perovskites as the model system, we realize the manipulation of band-edge states and charge distribution via mechanical—rather than chemical or thermal—regulation. Compression induces band-alignment switching and charge redistribution due to the different pressure responses of organic and inorganic building blocks, giving controllable emission properties of 2D perovskites. We propose and demonstrate a “pressure gating” strategy that enables the control of multiple emission states within a single material. We also reveal that band-alignment transition at the organic-inorganic interface is intrinsically not well resolved at room temperature owing to the thermally activated transfer and shuffling of band-edge carriers. This work provides important fundamental insights into the energetics and carrier dynamics of hybrid semiconductor heterostructures.

42 ENGINEERING↗
DOE OSTI2023

Out-of-plane ferroelectricity and robust magnetoelectricity in quasi-two-dimensional materials

Thin-film ferroelectrics have been pursued for capacitive and nonvolatile memory devices. They rely on polarizations that are oriented in an out-of-plane direction to facilitate integration and addressability with complementary metal-oxide semiconductor architectures. The internal depolarization field, however, formed by surface charges can suppress the out-of-plane polarization in ultrathin ferroelectric films that could otherwise exhibit lower coercive fields and operate with lower power. Here, we unveil stabilization of a polar longitudinal optical (LO) mode in the n = 2 Ruddlesden–Popper family that produces out-of-plane ferroelectricity, persists under open-circuit boundary conditions, and is distinct from hyperferroelectricity. Our first-principles calculations show the stabilization of the LO mode is ubiquitous in chalcogenides and halides and relies on anharmonic trilinear mode coupling. We further show that the out-of-plane ferroelectricity can be predicted with a crystallographic tolerance factor, and we use these insights to design a room-temperature multiferroic with strong magnetoelectric coupling suitable for magneto-electric spin-orbit transistors.

36 MATERIALS SCIENCE↗