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At least 1,693 records · Page 94
All sourcesNASA NTRSDOE OSTI
DOE OSTI2019

Viscoelasticity in associating oligomers and polymers: experimental test of the bond lifetime renormalization model

Recent findings that the association bond lifetimes τ α* in associating polymers diverge from their supramolecular network relaxation times τ c challenge past theories. The bond lifetime renormalization proposed by Rubinstein and coworkers [Stukalin et al., Macromolecules, 2013, 46, 7525] provides a promising explanation. To examine systematically its applicability, we employ shear rheology and dielectric spectroscopy to study telechelic associating polymers with different main chain (polypropylene glycol and polydimethylsiloxane), molecular weight (below entanglement molecular weight) and end groups (amide, and carboxylic acid) which form dimeric associations by hydrogen bonding. The separation between τ c (probed by rheology) and τ α* (probed by dielectric spectroscopy) strongly increases with chain length as qualitatively predicted by the model. However, to describe the increase quantitatively, a transition from Rouse to reptation dynamics must be assumed. This suggests that dynamics of super-chains must be considered to properly describe the transient network.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2021

Mechanistic investigation of a visible light mediated dehalogenation/cyclisation reaction using iron( iii ), iridium( iii ) and ruthenium( ii ) photosensitizers

The mechanism of a visible light-driven dehalogenation/cyclization reaction was investigated using ruthenium(II), iridium(III) and iron(III) photosensitizers by means of steady-state photoluminescence, time-resolved infrared spectroscopy, and nanosecond/femtosecond transient absorption spectroscopy. The nature of the photosensitizer was found to influence the product distribution such that the dehalogenated, non-cyclized products were only detected for the iron photosensitizer. Strikingly, with the iron photosensitizer, large catalytic yields required a low dielectric solvent such as dichloromethane, consistent with a previous publication. This low dielectric solvent allowed ultrafast charge-separation to outcompete geminate charge recombination and improved cage escape efficiency. Finally, the identification of reaction mechanisms unique to the iron, ruthenium, and iridium photosensitizer represents progress towards the long-sought goal of utilizing earth-abundant, first-row transition metals for emerging energy and environmental applications.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2025

Probing the influence of ion-pairing on ligand-field excited-state dynamics

Exploration of the photophysical and photochemical properties of transition metal complexes has driven ground-breaking advancements in solar energy conversion technologies, including photoredox catalysis. While significant research has been devoted to understanding excited state properties of second- and third-row transition metal complexes, earth-abundant first-row metal complexes have received comparatively little attention in this context until very recently. In particular, the role of ion-pairing – which has been identified as a potentially significant factor for Ir(III)-based photosensitizers – has not been examined with regard to its influence on the ligand-field excited states that dominate much of first-row photophysics. A key challenge in studying ion-pair interactions lies in quantifying the extent and nature of ion-pairing, particularly in non-aqueous media where the vast majority of photophysical studies are performed. Cobalt(III) polypyridyl complexes provide an attractive platform to address such questions due to their demonstrated potential for applications in photoredox catalysis involving ligand-field excited states. In the present study, we prepared a cobalt(III) polypyridyl complex, [Co(4,4′-OMebpy) 3 ](BAr F 4 ) 3 (where 4,4′-OMebpy is 4,4′-dimethoxy-2,2′-bipyridine and BAr F 4 is tetrakis(3,5-bis(trifluoromethyl)-phenyl)borate) to probe ion-pairing in non-aqueous solutions. Specifically, analysis of data acquired from both variable-temperature diffusion ordered spectroscopy (DOSY) NMR and 1-D rotating-frame nuclear Overhauser effect (ROE) experiments allowed us to identify and differentiate between solvent-separated ion pairs in high-dielectric media and contact ion pairs in a low-dielectric solvent. Time-resolved absorption spectroscopy was then used to measure ground-state recovery dynamics under these varying conditions of ion-pairing, the results of which revealed an increase in excited-state lifetime for contact ion-pairs that we suggest arises from a reduction in outer-sphere reorganization energy relative to conditions which favored solvent-separated ion pairs. We believe this study demonstrates that one can leverage broadly available NMR-based methods to understand ion-pairing in non-aqueous solutions, which in turn can provide a microscopic picture of intermolecular interactions that can impact the photophysical properties of transition metal-based chromophores.

Ghosh, Atanu [Michigan State University, East Lans↗
DOE OSTI2022

Dynamics of bottlebrush polymers

Bottlebrushes are an interesting class of polymers which shows intriguing material properties often associated with dynamics. While dynamical phenomena in linear polymers are well understood and existing theories can describe them in a good way, bottlebrush dynamics have only rarely been investigated. Therefore, we performed dielectric spectroscopy and quasi-elastic neutron scattering to study the dynamics of polydimethylsiloxane-based bottlebrush polymers, PDMS-g-PDMS focusing mostly on the segmental dynamics of the side chains. Comparing the relaxation times of the α – relaxation, tracked with dielectric spectroscopy, of bottlebrush polymers with those of their respective linear side chains show a slowing down once the side chains are attached to the backbone. This effect diminishes and finally vanishes with increasing side chain length. The time and length scale, offered by quasi-elastic neutron scattering, fits for the segmental dynamics together with faster processes. The Q -dependence of the segmental relaxation times allows to classify bottlebrush polymers as heterogenous including a non-Gaussian character. For such a dynamical system, the mean square displacement needs to be separated into single processes before an overall mean square displacement can be generated by applying the time temperature superposition principle.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Structure and good piezoelectric performance in the complex system of Pb[(Zn,Ni)Nb]O 3 –Pb[(In,Yb)Nb]O 3 –Pb(Zr,Hf,Ti)O 3

High-performance piezoelectrics are always demanded for the high-end application. In this study, a complex piezoelectric system of 0.49Pb(Zn 1/2 Ni 1/2 ) 1/3 Nb 2/3 O 3 – x Pb(In 1/2 Yb 1/2 ) 1/2 Nb 1/2 O 3 –(0.51 – x )Pb(Zr 1/2 Hf 1/2 ) 0.1 Ti 0.9 O 3 (0.16 ≤ x ≤ 0.23) was fabricated through the solid-state method. The structure, ferroelectric, piezoelectric, and dielectric properties were investigated. The optimum piezoelectric coefficient d 33 of 761 pC/N, high Curie temperature of 169 °C, dielectric permittivity ( ε r ) of 4557, and electromechanical coupling coefficient ( k p ) of 63% were found at the morphotropic phase boundary composition of x = 0.19, which are superior to other complex piezoelectric materials. In particular, a significant large-signal d 33 * of 913 pm/V and low strain hysteresis (6%) was obtained in the temperature range of 20–170 °C. Temperature-dependent x-ray diffraction (XRD) has demonstrated that good temperature stability is put down to the structure stability. The agreement between the calculated lattice strain from in situ high-energy synchrotron XRD data and the macroscopic measurements suggests that the large lattice strain has a dominant contribution to the high piezoelectric response. The high piezoelectric performance and good temperature stability makes it potential for application.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Defect accommodation in off-stoichiometric (SrTiO 3 ) n SrO Ruddlesden–Popper superlattices studied with positron annihilation spectroscopy

he low dielectric loss underlying the record performance of strained (SrTiO 3 ) n SrO Ruddlesden–Popper films as tunable microwave dielectrics was postulated to arise from (SrO) 2 faults accommodating local non-stoichiometric defects. Here, we explore the effect of non-stoichiometry on (SrTiO 3 ) n SrO using positron annihilation lifetime spectroscopy on a composition series of 300 nm thick n = 6 (Sr 1+δ TiO 3 ) n SrO thin films. These films show titanium-site vacancies across the stoichiometry series, with evidence that TiO x vacancy complexes dominate. Little change in defect populations is observed across the series, indicating the ability of Ruddlesden–Popper phases to accommodate ± 5% off-stoichiometry. This ability for defect accommodation is corroborated by scanning transmission electron microscopy with electron energy loss spectroscopy.

Physics↗
DOE OSTI2021

Traveling wakefield tube: THz source powered by nonrelativistic electron beam

High peak power, tunable, narrowband terahertz emitters are becoming sought after given their portability, efficiency, and ability to be deployed in the field for industrial, medical, and military applications. The use of accelerator systems producing THz frequencies via Cherenkov radiation, generated by passing an electron beam through a slow-wave wakefield structure, is a promising method to meet future THz requirements. To date, efforts have been dedicated to analysis and design of sources utilizing laser seeded bunched electron beam drivers with relativistic energies beyond 5 MeV. Presented here is a wakefield THz generation scheme based on passing a long quasi-dc nonrelativistic beam (200 keV) through a dielectric loaded travelling wave structure. Reduced energy allows for compactness and portability of the accelerator as the size and weight of the dielectric slow wave structure is vanishingly small compared to the accelerator unit. The presented scheme can serve as a tunable high peak power THz source operated between 0.4-1.6 THz and produces power gain by a factor of five with an average efficiency of 6.8%

43 PARTICLE ACCELERATORS↗
DOE OSTI2021

Quasiparticle electronic structure of phthalocyanine:TMD interfaces from first-principles GW

Interfaces formed between monolayer transition metal dichalcogenides and (metallo)phthalocyanine molecules are promising in energy applications and provide a platform for studying mixed-dimensional molecule-semiconductor heterostructures in general. An accurate characterization of the frontier energy level alignment at these interfaces is key in the fundamental understanding of the charge transfer dynamics between the two photon absorbers. Here, we employ the first-principles substrate screening GW approach to quantitatively characterize the quasiparticle electronic structure of a series of interfaces: metal-free phthalocyanine (H 2 Pc) adsorbed on monolayer MX 2 (M = Mo, W; X = S, Se) and zinc phthalocyanine (ZnPc) adsorbed on MoX 2 (X = S, Se). Furthermore, we reveal the dielectric screening effect of the commonly used α-quartz (SiO 2 ) substrate on the H 2 Pc:MoS 2 interface using the dielectric embedding GW approach. Our calculations furnish a systematic set of GW results for these interfaces, providing the structure–property relationship across a series of similar systems and benchmarks for future experimental and theoretical studies.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2022

Polar liquids at charged interfaces: A dipolar shell theory

The structure of polar liquids and electrolytic solutions, such as water and aqueous electrolytes, at interfaces underlies numerous phenomena in physics, chemistry, biology, and engineering. In this work, we develop a continuum theory that captures the essential features of dielectric screening by polar liquids at charged interfaces, including decaying spatial oscillations in charge and mass, starting from the molecular properties of the solvent. The theory predicts an anisotropic dielectric tensor of interfacial polar liquids previously studied in molecular dynamics simulations. We explore the effect of the interfacial polar liquid properties on the capacitance of the electrode/electrolyte interface and on hydration forces between two plane-parallel polarized surfaces. In the linear response approximation, we obtain simple formulas for the characteristic decay lengths of molecular and ionic profiles at the interface.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2022

Increasing the mobility and power-electronics figure of merit of AlGaN with atomically thin AlN/GaN digital-alloy superlattices

Alloy scattering in random AlGaN alloys drastically reduces the electron mobility and, therefore, the power-electronics figure of merit. As a result, Al compositions greater than 75% are required to obtain even a twofold increase in the Baliga figure of merit compared to GaN. However, beyond approximately 80% Al composition, donors in AlGaN undergo the DX transition, which makes impurity doping increasingly more difficult. Moreover, the contact resistance increases exponentially with the increase in Al content, and integration with dielectrics becomes difficult due to the upward shift of the conduction band. Atomically thin superlattices of AlN and GaN, also known as digital alloys, are known to grow experimentally under appropriate growth conditions. These chemically ordered nanostructures could offer significantly enhanced figure of merit compared to their random alloy counterparts due to the absence of alloy scattering, as well as better integration with contact metals and dielectrics. In this work, we investigate the electronic structure and phonon-limited electron mobility of atomically thin AlN/GaN digital-alloy superlattices using first-principles calculations based on density-functional and many-body perturbation theory. The bandgap of the atomically thin superlattices reaches 4.8 eV, and the in-plane (out-of-plane) mobility is 369 (452) cm 2 V -1 s -1 . Using the modified Baliga figure of merit that accounts for the dopant ionization energy, here we demonstrate that atomically thin AlN/GaN superlattices with a monolayer sublattice periodicity have the highest modified Baliga figure of merit among several technologically relevant ultra-wide bandgap materials, including random AlGaN, β-Ga 2 O 3 , cBN, and diamond.

36 MATERIALS SCIENCE↗
DOE OSTI2022

A Landau–Devonshire analysis of strain effects on ferroelectric Al 1-x Sc x N

We present a thermodynamic analysis of the recently discovered nitride ferroelectric materials using the classic Landau–Devonshire approach. Electrostrictive and dielectric stiffness coefficients of Al 1-x Sc x N with a wurtzite structure (6 mm) are determined using a free energy density function assuming a hexagonal parent phase (6/mmm), with the first-order phase transition based on the dielectric stiffness relationships. The results of this analysis show that the strain sensitivity of the energy barrier is one order of magnitude larger than that of the spontaneous polarization in these wurtzite ferroelectrics, yet both are less sensitive to strain compared to classic perovskite ferroelectrics. These analysis results reported here explain experimentally reported sensitivity of the coercive field to elastic strain/stress in Al 1-x Sc x N films and would enable further thermodynamic analysis via phase field simulation and related methods.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2022

Thermal conductivity of multilayer polymer-nanocomposite thin films

The development of electrical insulators that are thermally conducting is critical for thermal management applications in many advanced electronics and electrical devices. Here, we synthesized polymer nanocomposite (PNC) films composed of polymers [polyethylenimine, poly(vinylamine), poly(acrylic acid), and poly(ethylene oxide)] and dielectric fillers (montmorillonite clay and hexagonal boron nitride) by layer-by-layer technique. The cross-plane thermal conductivity (k⊥) of the film was measured by the 3ω method. The effect of various factors such as film growth, filler type, filler volume fraction, polymer chemical structures, and temperature on the thermal conductivity is reported. The k⊥ of PNCs with thickness from 37 nm to 1.34 μm was found to be in the range of 0.11 to 0.21 ± 0.02 W m−1 K−1. The k⊥ values were found to be lower than the constituent polymer matrix. The experimental result is compared with existing theoretical models of nanocomposite systems to get insight into heat transfer behavior in such layered films composed of dielectrics and polymers.

Physics↗
DOE OSTI2022

Vorticity screening by dense layers

We investigate variable density layers in the presence of vortices, by analogy to line charges in the presence of a dielectric slab. We adapt solutions for dielectric layers from the literature to the variable density fluid case, obtaining exact hypergeometric expressions for flow velocities induced everywhere by a vortex in the vicinity of a finite-thickness slab of different densities. The dimensionless Atwood number, which appears naturally in other variable density phenomena, such as the Rayleigh–Taylor instability, reappears here as the natural ordering parameter for the influence of the slab, which acts primarily to screen the influence of vorticity across the slab to a lower effective circulation. The solution takes the form of scaling correction factors that might be applied to computational models or evaluated directly. Extensions, where vorticity is localized within the dense layer itself and amplified outside of it, are considered, as well as some speculative applications such as inertial confinement fusion capsule designs.

42 ENGINEERING↗
DOE OSTI2023

Plasma production and ion heating systems for the Material Plasma Exposure eXperiment

Plasma production and ion heating in the Material Plasma Exposure eXperiment (MPEX), whose design is nearing completion, is accomplished using continuous wave RF power with average power density up to 1.6 MW/m2 at the plasma interface. Plasma is produced using helicon waves coupled through a single helical antenna at 13.56 MHz with power supplied by three 100 kW fixed-frequency RF generators feeding a power combiner network followed by the matching network and launcher. The helicon source can utilize various gasses including hydrogen, deuterium, and helium, with a magnetic field strength in the source region up to 0.2 T, and maximum device |B| of 2.5 T. Power is coupled to ions via ion cyclotron heating at the fundamental resonance using a pair of phased helical antennas operating in the frequency range 4-9 MHz, that launch waves towards the resonance from the antenna region where ω > ωci. ICH power is supplied by a single 500 kW tunable RF transmitter through a 90° power splitter and matching/decoupling network. In the case of both the helicon and ICH systems the antennas are located external to the vacuum, with power transferred through novel water-cooled coaxial vacuum windows consisting of fused quartz outer cylinders and silicon nitride inner cylinders with forced convection water cooling between them. The antenna enclosures are pressurized with dry air to 3 bar absolute for voltage standoff.Several 3-D COMSOL models have been created to simulate the two systems. A model of the helicon region utilizing a cold plasma dielectric tensor with accurate magnetic field and realistic plasma density profiles has been used to calculate the plasma loading/complex antenna input impedance at the launcher feed for various ne and |B| values, for the purpose of estimating power handling. It also incorporates the geometry of all launcher structures relevant to this determination. A still more detailed model of the launcher together with a lossy dielectric plasma surrogate has been used to determine RF electric field values and power losses in the device components.Similar models have been produced to predict the performance and power handling of the ICH launcher. For this device the impedance matrix of the two-element antenna array is calculated using a warm plasma model, necessary to properly determine the wave propagation and absorption.

Goulding, Richard↗
DOE OSTI2023

7.86 kV GaN-on-GaN PN power diode with BaTiO3 for electrical field management

Devices based on gallium nitride (GaN) have great potential for high power switching applications due to the high breakdown field and high electron mobility. In this work, we present a vertical GaN-on-GaN PN power diode using high dielectric constant material, BaTiO3, for electrical field management and high breakdown voltages, in together with an optimized guard-ring and field plate design. Numerical simulation shows that with high-k dielectrics implemented, the peak electrical field at the PN interface is mitigated from 3.5 to 3.1 MV/cm under a reverse bias of −9.05 kV. The device design with BaTiO3 shows a breakdown voltage of 9.65 kV or about 600 V improvement. The fabricated diodes with a 57 μm thick drift layer demonstrate a breakdown voltage of 7.86 kV on a bulk GaN substrate. The device has an on-resistance of 2.8 mΩ cm2 and a Baliga figure of merit of 22 GW/cm2.

Physics↗
DOE OSTI2024

Ideal conductor/dielectric model (ICDM): A generalized technique to correct for finite-size effects in molecular simulations of hindered ion transport

Molecular simulations serve as indispensable tools for investigating the kinetics and elucidating the mechanism of hindered ion transport across nanoporous membranes. In particular, recent advancements in advanced sampling techniques have made it possible to access translocation timescales spanning several orders of magnitude. In our prior study [Shoemaker et al., J. Chem. Theory Comput. 18, 7142 (2022)], we identified significant finite size artifacts in simulations of pressure-driven hindered ion transport through nanoporous graphitic membranes. We introduced the ideal conductor model, which effectively corrects for such artifacts by assuming the feed to be an ideal conductor. In the present work, we introduce the ideal conductor dielectric model (Icdm), a generalization of our earlier model, which accounts for the dielectric properties of both the membrane and the filtrate. Using the Icdm model substantially enhances the agreement among corrected free energy profiles obtained from systems of varying sizes, with notable improvements observed in regions proximate to the pore exit. Moreover, the model has the capability to consider secondary ion passage events, including the transport of a co-ion subsequent to the traversal of a counter-ion, a feature that is absent in our original model. We also investigate the sensitivity of the new model to various implementation details. The Icdm model offers a universally applicable framework for addressing finite size artifacts in molecular simulations of ion transport. It stands as a significant advancement in our quest to use molecular simulations to comprehensively understand and manipulate ion transport processes through nanoporous membranes.

Chemistry↗
DOE OSTI2024

Native point defects in HgCdTe infrared detector material: Identifying deep centers from first principles

We investigate the native point defects in the long-wavelength infrared (LWIR) detector material Hg0.75Cd0.25Te using a dielectric-dependent hybrid density functional combined with spin–orbit coupling. Characterizing these point defects is essential as they are responsible for intrinsic doping and nonradiative recombination centers in the detector material. The dielectric-dependent hybrid functional allows for an accurate description of the bandgap (Eg) for Hg1−xCdxTe (MCT) over the entire compositional range, a level of accuracy challenging with standard hybrid functionals. Our comprehensive examination of the native point defects confirms that cation vacancies VHg(Cd) are the primary sources of p-type conductivity in the LWIR material given their low defect formation energies and the presence of a shallow acceptor level (−/0) near the valence-band maximum. In addition to the shallow acceptor level, the cation vacancies exhibit a deep charge transition level (2−/−) situated near the midgap, characteristic of nonradiative recombination centers. Our results indicate that Hg interstitial could also be a deep center in the LWIR MCT through a metastable configuration under the Hg-rich growth conditions. While an isolated Te antisite does not show deep levels, the formation of VHg–TeHg defect complex introduces a deep acceptor level within the bandgap.

Physics↗
DOE OSTI2024

Studies on the compositional dependent structural and electrical properties of CaTiO3-modified K0.5Na0.5NbO3 piezoelectric system

Lead-free piezoelectric ceramics of (1 − x)K0.5Na0.5NbO3-xCaTiO3 were fabricated, and their crystal structure, microstructure, and electrical properties were systematically studied. Rietveld refinement of the x-ray diffraction data and Raman spectroscopic analyses revealed a composition-dependent structural phase transition: three phase transitions, namely, from a pure orthorhombic phase for x ≤ 0.02 to a mixed phase of orthorhombic and tetragonal phases (0.03 ≤ x ≤ 0.08) and finally another mixed phase of tetragonal + cubic for x = 0.10 and 0.15 at room temperature (RT). The morphological study reveals a decrease in grain size along with a more uniform distribution of grains as the concentration of CaTiO3 (CT) increases; notably, a homogeneous distribution of grains is observed for x = 0.05. The temperature-dependent dielectric properties show two phase transitions, from orthorhombic to tetragonal (TO-T) and tetragonal to cubic (TC), for unmodified K0.5Na0.5NbO3 (KNN). However, both the phase transition temperatures (TO-T and TC) decrease, and the transition peaks broaden with an increase in CT substitution, and for x > 0.06, the TO-T shifted below RT. The broadening of the transition peak at TO-T may be due to the relaxation behavior. Among the prepared samples, the 5 mol. % CT-modified KNN shows the optimum electrical properties (d33 = 114 pC/N, ɛr = 412, and 2Pr = 15.25 μC/cm2) at RT. The enhanced electrical properties for x = 0.05 are due to the coexistence of orthorhombic and tetragonal phases, facilitating easy polarization rotation and flattening of the free energy profile. A phase diagram has been constructed based on the information gathered from the temperature-dependent dielectric measurements, RT x-ray diffraction, and Raman spectroscopy data and is discussed in detail.

Physics↗