A temperature-stable transistor vco
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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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Electron radiation stability of silicon nitride insulated gate FET with passivation layers and heat treatment, noting contamination effects
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Amplifier circuit using two FETs combines improved input and output impedances with relatively large signal handling capability and an immunity from adverse effects of automatic gain control. Circuit has sources and drains in parallel plus a resistive divider for signal and bias to either of the gate terminals.
MOSFET drivers for low current memory fabricated in 64 unit monolithic strips, discussing driver performance data
Several cycles of photoetching, dopant deposition, and drive-in produce selectively-doped regions and semiconductor junctions within a single chip.
Limiting circuit protects the main power supply of electronic modules and limits the current drawn by each module should a short circuit occur. It limits current within one mA when used with direct current of either polarity, or with pulse or ac power sources from direct current to 100 kHz.
Infrared thermal maps pinpoint exact location where second breakdown will occur before phenomenon happens and before physical damage develops at hot spot. Crystal structure analysis at that point determines cause of fault. Absolute power of radiation emitted from hot spot is direct indication of voltage level at which second breakdown occurs
Electric motor control system with pulse width modulation for providing automatic null seeking servo
An expression for the emitter efficiency is derived taking the degeneracy of the emitter into account. It is found that, even if there is no recombination of minority carriers in the emitter, degeneracy reduces the emitter efficiency. In addition this first order theory explains experimental results on temperature dependence of current gain and predicts an optimum emitter design for a fixed type of emitter profile.
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Gyrator circuit is especially useful in integrated circuits for such purposes as simulating inductors with capacitors. Circuit is adaptable to semifloating and full floating configurations. It has excellent response, low power consumption, and high energy storage capacity.
Semiconductor package has been developed for high power semiconductor devices that operate in the GHz-frequency range at several watts. Package includes stud, insulating ring, electrically conductive washer, insulating washer, braze ring, and cap. It is mechanically strong and can be used with variety of circuits.