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At least 1,693 records · Page 94

Field-resilient supercurrent diode in a multiferroic Josephson junction

The research on supercurrent diodes has surged rapidly due to their potential applications in electronic circuits at cryogenic temperatures. To unlock this functionality, it is essential to find supercurrent diodes that can work consistently at zero magnetic field and under ubiquitous stray fields generated in electronic circuits. However, a supercurrent diode with robust field tolerance is currently lacking. Here, we demonstrate a field-resilient supercurrent diode by incorporating a 2D multiferroic material into a Josephson junction, and observed a pronounced supercurrent diode effect at zero magnetic field. More importantly, the supercurrent rectification persists over a wide and bipolar magnetic field range beyond industrial standards for field tolerance. By theoretically modeling a multiferroic Josephson junction, we unveil that the interplay between spin-orbit coupling and multiferroicity underlies the unusual field resilience of the observed diode effect. This work introduces multiferroic Josephson junctions as a new field-resilient superconducting device for cryogenic electronics.

Yang, Hung-Yu [Univ. of California, Los Angeles, C↗

Power system effects and mitigation recommendations for DER cyberattacks

Extensive deployment of interoperable distributed energy resources (DER) is increasing the power system cyber security attack surface. National and jurisdictional interconnection standards require DER to include a range of autonomous and commanded grid‐support functions, which can drastically influence power quality, voltage, and bulk system frequency. Here, the authors investigate the impact to the cyber‐physical power system in scenarios where communications and operations of DER are controlled by an adversary. The findings show that each grid‐support function exposes the power system to distinct types and magnitudes of risk. The physical impact from cyber actions was analysed in cases of DER providing distribution system voltage regulation and transmission system support. Finally, recommendations are presented for minimising the risk using engineered parameter limits and segmenting the control network to minimise common‐mode vulnerabilities.

24 POWER TRANSMISSION AND DISTRIBUTION↗

Extreme measurements with Photonic Doppler Velocimetry (PDV)

Photonic Doppler Velocimetry (PDV) is a fiber-based diagnostic for the extreme conditions created by high-speed impact, explosive detonation, electrical pulsed power, and intense laser ablation. PDV is a conceptually simple application of the optical Doppler effect, but measurements above 1 km/s only became practical at the beginning of the twenty-first century. In this work, I discuss the evolution of PDV, its operational details, practical analysis, and outstanding challenges.

47 OTHER INSTRUMENTATION↗

Non-degenerate parametric mixing and Q-enhancement in ALN Lamb wave resonator

In this Letter, we explore a non-degenerate phase independent parametric quality factor (Q)-enhancement technique for aluminum nitride (AlN) Lamb wave resonators. Unlike other active Q-enhancement techniques which require precise phase control of the electronic feedback loop, this technique is implemented by parametrically pumping AlN material stiffness to realize a negative resistance seen at the signal path. The negative resistance is dependent on the nonlinear material modulation and multi-resonance coupling in the device. A nonlinear circuit model is developed to simulate the parametric coupling of each resonance and extract the nonlinearity of AlN from experimental data. With proper pump frequency and pump power, the device quality factor is boosted in both simulation and experiment. The demonstrated Q-enhancement method is simple to implement and can be applied to other types of resonators that have nonlinear behavior and support multi-resonance operation.

42 ENGINEERING↗

Intrinsic synaptic plasticity of ferroelectric field effect transistors for online learning

Nanoelectronic devices emulating neuro-synaptic functionalities through their intrinsic physics at low operating energies is imperative toward the realization of brain-like neuromorphic computers. In this work, we leverage the non-linear voltage dependent partial polarization switching of a ferroelectric field effect transistor to mimic plasticity characteristics of biological synapses. Here, we provide experimental measurements of the synaptic characteristics for a 28nm high-k metal gate technology based device and develop an experimentally calibrated device model for large-scale system performance prediction. Decoupled read-write paths, ultra-low programming energies and the possibility of arranging such devices in a cross-point architecture demonstrate the synaptic efficacy of the device. Our hardware-algorithm co-design analysis reveals that the intrinsic plasticity of the ferroelectric devices has potential to enable unsupervised local learning in edge devices with limited training data

42 ENGINEERING↗

Tunable quantum logic gate on photonic qubits with a ladder emitter

We describe how a ladder emitter can implement a tunable quantum logic gate on photonic qubits encoded in the frequency basis. The ground-to-first excited state of the ladder emitter interacts with the control photon, and the first-to-second excited state transition interacts with the target photon. By controlling the relative detuning between the target photon and the first-to-second excited state transition of the ladder emitter, we enable any controlled-phase operation from 0 to π. We derive analytical formulas for the performance of the gate through the S-matrix formalism as well as describe the mechanism intuitively. This gate is deterministic, does not utilize any active control, and needs only a single ladder emitter, enabling low-footprint and more efficient decomposition of quantum circuits, especially the quantum Fourier transform. We suggest multiple potential systems for physical realization of our proposal, such as lanthanide ions embedded in Purcell-enhanced cavities. We expect these results to motivate further interest in photonic quantum information processing with designer emitters.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

High-bandwidth density silicon photonic resonators for energy-efficient optical interconnects

The growth of artificial intelligence applications demands ever larger and more complex deep learning models, dominating today's—and tomorrow's—data center and high-performance computing systems. While traditional electronics are failing to keep pace with application demands, silicon photonic (SiPh) interconnects have emerged as a necessary technology to support these systems. SiPh-driven wavelength-division multiplexing (WDM) offers a particularly promising path toward supporting incredibly high-aggregate link bandwidth in a compact and efficient form factor. One of the basic building blocks of these integrated WDM interconnects is the SiPh resonator. Their inherent wavelength selectivity and compact footprint allow for efficient data transmission multiplexed across dozens of carrier wavelengths. Used as add-drop (AD) filters, SiPh resonators are critical to constructing integrated tunable wavelength-selective optical circuit switches as well as for demultiplexing the different carrier wavelengths toward independent wavelength-insensitive photodiodes in a dense wavelength-division multiplexing receiver. Resonators in the all-pass (AP) configuration are widespread as well, allowing for wavelength-selective modulation to drive aggregate link bandwidths far beyond the individual channel data rate. Unlike SiPh Mach–Zehnder modulators (MZM), resonant modulators can be driven using low, complementary metal-oxide-semiconductor drive voltages, allowing for tight co-integration between photonic integrated circuits, fabricated with larger process node technologies, and electronic integrated circuits, designed to exploit the advantages of the latest node. To push toward practical peta-scale interconnects, a comprehensive review of SiPh resonators is required, addressing bottlenecks and design constraints at both the architecture and device levels. We first describe the predominant integrated link architectures and identify their limits. We then discuss the device-level design considerations that can be made for both AD and AP configuration resonators to overcome the system level limits with novel resonator device designs. Analytical models and numerical simulation of resonators are validated by experimental measurement of devices fabricated in a commercial 300-mm foundry, showing a clear path toward volume manufacturing. The demonstrated resonant modulators and filters support the feasibility of increasing the aggregate bandwidth of resonator-driven SiPh interconnects into the peta-scale regime.

42 ENGINEERING↗

Quasi-deterministic localization of Er emitters in thin film TiO 2 through submicron-scale crystalline phase control

With their shielded 4f orbitals, rare-earth ions (REIs) offer optical and electron spin transitions with good coherence properties even when embedded in a host crystal matrix, highlighting their utility as promising quantum emitters and memories for quantum information processing. Among REIs, trivalent erbium (Er 3+ ) uniquely has an optical transition in the telecom C-band, ideal for transmission over optical fibers, making it well suited for applications in quantum communication. The deployment of Er 3+ emitters into a thin film TiO 2 platform has been a promising step toward scalable integration; however, like many solid-state systems, the deterministic spatial placement of quantum emitters remains an open challenge. Here, we investigate laser annealing as a means to locally tune the optical resonance of Er 3+ emitters in TiO 2 thin films on Si. Using both nanoscale x-ray diffraction measurements and cryogenic photoluminescence spectroscopy, we show that tightly focused below-gap laser annealing can induce anatase to rutile phase transitions in a nearly diffraction-limited area of the films and improve local crystallinity through grain growth. As a percentage of Er:TiO 2 is converted to rutile, the Er 3+ optical transition blueshifts by 13 nm. We explore the effects of changing laser annealing time and show that the amount of optically active Er:rutile increases linearly with laser power. We additionally demonstrate local phase conversion on microfabricated Si structures, which holds significance for quantum photonics.

36 MATERIALS SCIENCE↗

Color center in β -Ga 2 O 3 emitting at the telecom range

Transition metal (TM) ions incorporated into a host from a wide bandgap semiconductor are recognized as a promising system for quantum technologies with enormous potential. In this work, we report on a TM color center in β-Ga 2 O 3 with physical properties attractive for quantum information applications. The center is found to emit at 1.316 μm and exhibits weak coupling to phonons, with optically addressable higher-lying excited states, beneficial for single-photon emission within the telecom range (O-band). Using magneto-photoluminescence (PL) complemented by time-resolved PL measurements, we identify the monitored emission to be internal 1 E→ 3 A 2 spin-forbidden transitions of a 3d 8 TM ion with a spin-triplet ground state—a possible candidate for a spin qubit. We tentatively attribute this color center to a complex involving a sixfold coordinated Cu 3+ ion.

36 MATERIALS SCIENCE↗

Two-frequency RF fields induced multipactor in coaxial transmission lines

This study presents a comprehensive investigation of two-surface multipactor discharge in coaxial transmission lines under two-frequency radio frequency (RF) excitation using one-dimensional Monte Carlo simulations validated against three-dimensional particle-in-cell simulations and experimental data. The results show that introducing a second carrier mode can suppress multipactor by reshaping and shrinking the susceptibility region, with the extent and location of suppression strongly dependent on the device's aspect ratio and the relative phase of the second carrier mode. Distinct suppression patterns are observed across different fd regimes, while in some cases, susceptibility expansion also occurs under two-frequency operation. A key outcome is the identification and delineation of pure and mixed multipactor modes in coaxial geometry, where analytical mode boundaries are not readily available. Unlike planar geometries, pure-mode regions in coaxial systems overlap with mixed-mode domains, complicating mode identification. Additionally, image charge forces are found to have negligible influence on susceptibility thresholds but strongly affect electron growth rates. These findings offer valuable insights into the use of waveform engineering for controlling multipactor in high-power RF systems.

43 PARTICLE ACCELERATORS↗