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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 1,693 records · Page 94
All sourcesNASA NTRSDOE OSTI
DOE OSTI2019

Measurement and alleviation of subsurface damage in a thick-crystal neutron interferometer

The construction is described of a monolithic thick-crystal perfect silicon neutron interferometer using an ultra-high-precision grinding technique and a combination of annealing and chemical etching that differs from the construction of prior neutron interferometers. The interferometer is the second to have been annealed after machining and the first to be annealed prior to chemical etching. Monitoring the interference signal at each post-fabrication step provides a measurement of subsurface damage and its alleviation. In this case, the strain caused by subsurface damage manifests itself as a spatially varying angular misalignment between the two relevant volumes of the crystal and is reduced from ~10 -5 rad to ~10 -9 rad by way of annealing and chemical etching.

Chemistry↗
DOE OSTI2021

Investigating the Impact of Thickness, Calendering and Channel Structures of Printed Electrodes on the Energy Density of LIBs - 3D Simulation and Validation

Current lithium ion batteries (LIBs) are expensive and bulky, limited by relatively low charging rates. To increase the rate of charging and reduce weight, thin electrodes with high energy density are required. The increase in energy density can be achieved by several techniques including boosting electrolyte transport, high loading/utilization of active material, employing high conductive electrolytes and electrodes with advanced architectures, and increasing cell temperature. In this paper, a 3D physics-based electrochemical model of LIBs is developed in COMSOL simulation software for different thickness, calendering steps as well as channel structures (conical, cylindrical) to optimize the electrode design and in turn maximize volumetric energy density. The simulation results demonstrated that calendering the electrodes with high initial porosity increases the volumetric energy density of the cell. In addition, cylindrical channel structures with relatively lower edge-to-edge distance also results in increased volumetric energy density. The simulation results of the 3D model was validated by comparing it with experimental results.

improving volumetric energy density↗
DOE OSTI2020

The Effects of Absorber Thickness on Reverse-Bias Damage in Cu(In,Ga)Se2 Solar Cells

We studied a variety of absorber thicknesses in Cu(In,Ga)Se 2 devices to examine the ability of the cell to withstand reverse current flow without damage. Absorbers were varied from 2.5 um to 0.4 um, with the expectation that larger reverse current would be allowed to flow at lower voltages as absorbers were made thinner. Our initial experiments showed promise. However, as the efficiency of thin devices was improved, the reverse current allowed at a given voltage decreased. Here we present our negative results on the ability of thin devices to allow higher reverse currents at lower voltages. We also give details on our procedures for reverse-bias testing small-area solar cells. We hope this information will be useful for those who want to study reverse-bias at the cell level.

14 SOLAR ENERGY↗
DOE OSTI2024

Correlations Between In-Line X-ray Diffraction Data and In-Field Critical Current of Long, 4-μm Thick Film REBCO Tapes Made by Advanced MOCVD

REBa 2 Cu 3 O 7-δ (REBCO, RE = rare earth) tapes with high critical current can be very impactful in high magnetic field applications at low temperatures and power applications at high temperatures. A pilot-scale Advanced Metal Organic Chemical Vapor Deposition (MOCVD) method was used to fabricate 50-m-long, 4+μm-thick REBCO tape in a single pass. Critical currents 3.3x that of commercial HTS tapes were achieved at 20 K, 12 T in these 50-m-long tapes. An in-line 2D X-ray Diffraction (XRD) system has been used to assess the quality of the long tapes in real-time, during manufacturing. The key peaks of REBCO, REO, and BZO phases were identified and utilized for tape quality analysis. Furthermore, a 20-m tape made by Advanced MOCVD was tested over its entire length by reel-to-reel (R2R) scanning Hall-probe microscopy (SHPM) at 65 K, 0.25 T, 2 T, and 4 T. 4-mm-wide strands of Advanced MOCVD tapes showed mean critical currents at 65 K of 530 A, 200 A, and 104 A at 0.25 T, 2 T, and 4 T respectively. The combined use of in-line and offline characterization techniques provides a reliable approach for assessing long REBCO tapes during manufacturing, serving as an effective feedback source for quality control in scaled-up REBCO tape deposition processes. This advancement contributes to the production of longer and more uniform high-performance REBCO tapes for large-scale, high-field superconducting applications

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2021

Microstructure and Hard Magnetic Properties of Sm 1-x Zr x (Fe,Co) 11.3-y Ti 0.7 By Ingots and Thick Melt-Spun Ribbons

Permanent magnets made from Sm(Fe,Co) 12 -based compounds are being actively pursued through nanostructuring and powder metallurgy. This study was aimed at the development of hard magnetic properties in bulk as-cast alloys and in melt-spun alloys for very low wheel speeds. Slower solidification rates and alloying with Zr promote the tetragonal ThMn 12 -type crystal structure, whereas higher solidification rates and alloying with B replace the ThMn 12 structure type with the TbCu 7 structure type. When introduced simultaneously, Zr and B dramatically reduce the alloy solidification rates required for both the refinement of the 1:12 crystallites and their replacement with the 1:7 phase. In bulk arc-melted alloys, this allowed for a microstructure of separated 1:12 crystallites 1–3 μm in size, although, because of the ferromagnetic nature of a minority phase, the coercivity of these fine-grained alloys reached only 0.73 kOe. A moderately accelerated solidification further refined the 1:12 crystallites and increased the coercivity; a Sm 0.7 Zr 0.4 (Fe,Co) 10.8 Ti 0.7 B 0.5 alloy exhibited a coercivity of 1.5 kOe and a maximum energy product of 3.4 MGOe when it was melt-spun into a 0.26-mm-thick ribbon. A more rapid solidification suppressed the 1:12 phase and after annealing at 800–850 °C, the alloys modified with Zr and B developed reasonably high coercivity and maximum energy product even when melt-spun at a wheel speed of 6 m/s. For the above-mentioned alloy, these values were 4.1 kOe and 7.8 MGOe, respectively. Further, a similarly processed very-Sm-lean Sm 0.5 Zr 0.6 (Fe,Co) 10.6 Ti 0.7 B 0.7 alloy exhibited a remanence of 8.8 kG and an energy product of 7.4 MGOe.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Growth and structural evolution of Sn on Ag(001): Epitaxial monolayer to thick alloy film

The growth and structure of Sn on Ag(001), from submonolayer to thick film coverages at room temperature, are studied using low energy electron diffraction, x-ray photoemission spectroscopy and angle-resolved photoemission spectroscopy (ARPES) techniques. The authors observe different growth modes for submonolayer Sn coverages and for higher Sn coverages. Systematic surface structural evolution, consistent with the substitution of surface Ag atoms by Sn atoms, is observed for submonolayer Sn coverages while an ordered Ag-Sn bulk alloy film is formed for higher Sn coverages with an Ag overlayer. For monolayer coverage of Sn, a pseudomorphic growth of a Sn layer without alloying is determined. ARPES results also confirm the presence of an ordered Ag overlayer on the bulk Ag-Sn alloy film, suggesting the formation of an Ag/Ag{sub 3}Sn/Ag(001) sandwich structure at the surface for higher Sn coverages. The present results illustrate the complex interplay of atomic mobilities, surface free-energies, and alloy formation energies in determining the growth and structural properties of the system.

36 MATERIALS SCIENCE↗
DOE OSTI2017

Enhanced photocathode performance through optimization of film thickness and substrate

Here, it is shown that the efficiency of photoelectron emission may be enhanced, several-fold, through optimization of photocathode film thickness and appropriate substrate configuration. Such an enhancement is based on a careful consideration of wave interference effects in the film and the consequent modulation of the absorption profiles and electron emission probabilities. Finally, the inadequacy of the well-known Lambert-Beer law for modeling photon absorption in thin films is also discussed.

42 ENGINEERING↗
DOE OSTI2022

Twin-free, directly synthesized MFI nanosheets with improved thickness uniformity and their use in membrane fabrication

Zeolite nanosheets can be used for the fabrication of low-defect-density, thin, and oriented zeolite separation membranes. However, methods for manipulating their morphology are limited, hindering progress toward improved performance. We report the direct synthesis (i.e., without using exfoliation, etching, or other top-down processing) of thin, flat MFI nanosheets and demonstrate their use as high-performance membranes for xylene isomer separations. Our MFI nanosheets were synthesized using nanosheet fragments as seeds instead of the previously used MFI nanoparticles. The obtained MFI nanosheets exhibit improved thickness uniformity and are free of rotational and MEL intergrowths as shown by transmission electron microscopy (TEM) imaging. The nanosheets can form well-packed nanosheet coatings. Upon gel-free secondary growth, the obtained zeolite MFI membranes show high separation performance for xylene isomers at elevated temperature (e.g., p-xylene flux up to 1.5 × 10 –3 mol m –2 s –1 and p-/o-xylene separation factor of ~600 at 250°C).

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2025

Thickness-dependent polaron crossover in tellurene

Polarons, quasiparticles from electron-phonon coupling, are crucial for material properties including high-temperature superconductivity and colossal magnetoresistance. However, scarce studies have investigated polaron formation in low-dimensional materials with phonon polarity and electronic structure transitions. In this work, we studied polarons of tellurene, composed of chiral Te chains. The frequency and linewidth of the A 1 phonon, which becomes increasingly polar for thinner tellurene, change abruptly for thickness below 10 nanometers, where field-effect mobility drops rapidly. These phonon and transport signatures, combined with phonon polarity and band structure, suggest a crossover from large polarons in bulk tellurium to small polarons in few-layer tellurene. Effective field theory considering phonon renormalization in the small-polaron regime semiquantitatively reproduces the phonon hardening and broadening effects. This polaron crossover stems from the quasi–one-dimensional nature of tellurene, where modulation of interchain distance reduces dielectric screening and promotes electron-phonon coupling. Our work provides valuable insights into the influence of polarons on phononic, electronic, and structural properties in low-dimensional materials.

42 ENGINEERING↗
DOE OSTI2016

Discovery of robust in-plane ferroelectricity in atomic-thick SnTe

Stable ferroelectricity with high transition temperature in nanostructures is needed for miniaturizing ferroelectric devices. Here, we report the discovery of the stable in-plane spontaneous polarization in atomic-thick tin telluride (SnTe), down to a 1–unit cell (UC) limit. The ferroelectric transition temperature T c of 1-UC SnTe film is greatly enhanced from the bulk value of 98 kelvin and reaches as high as 270 kelvin. Moreover, 2- to 4-UC SnTe films show robust ferroelectricity at room temperature. The interplay between semiconducting properties and ferroelectricity in this two-dimensional material may enable a wide range of applications in nonvolatile high-density memories, nanosensors, and electronics.

36 MATERIALS SCIENCE↗
DOE OSTI2013

Critical stability of almost adiabatic convection in a rapidly rotating thick spherical shell

In this work, the convection equations in the almost adiabatic approximation is studied for which the choice of physical parameters is primarily based on possible applications to the hydrodynamics of the deep interiors of the Earth and planets and moons of the terrestrial group. The initial system of partial differential equations (PDEs) was simplified to a single second-order ordinary differential equation for the pressure or vertical velocity component to investigate the linear stability of convection. The critical frequencies, modified Rayleigh numbers, and distributions of convection are obtained at various possible Prandtl numbers and in different thick fluid shells. An analytical WKB-type solution was obtained for the case when the inner radius of the shell is much smaller than the outer radius and convective sources are concentrated along the inner boundary.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Micron-thick spectroscopic cells for studying the Paschen-Back regime on the hyperfine structure of cesium atoms

It is shown that the use of spectroscopic cells of micron thickness (L = 10–50 μm) allows one to effectively study the behavior of individual levels of the Cs D{sub 2} line in strong magnetic fields up to 9 kG. In particular, the absorption spectrum of Cs excited by circularly polarized light in fields above 8 kG consists of two fully separated groups, each containing eight atomic transitions. The intensities of atomic transitions and their frequency slopes (vs. magnetic field) in each group are almost the same. The physical explanation for the observed features is given; in particular, it is shown that one of the 54 possible atomic transitions in moderate magnetic fields (denoted F{sub g} = 4, m{sub F} = 4 → F{sub e} = 5, m{sub F} = 5) has unique characteristics that make it possible to predict the intensities and frequency slopes of seven atomic transitions in the same group. Practical applications of devices based on micrometric-thin cells in strong magnetic fields are considered.

74 ATOMIC AND MOLECULAR PHYSICS↗
DOE OSTI2018

Study of Electric Explosion of Flat Micron-Thick Foils at Current Densities of (5–50)×10 8 A/cm 2

Electric explosions of flat Al, Тi, Ni, Cu, and Та foils with thicknesses of 1–16 μm, widths of 1–8 mm, and lengths of 5–11 mm were studied experimentally on the BIN, XP, and COBRA high-current generators at currents of 40–1000 kA and current densities of (5–50) × 10 8 A/cm 2 . The images of the exploded foils were taken at different angles to the foil surface by using point projection radiography with an X-pinch hot spot as the radiation source, the spatial resolution and exposure time being 3 μm and 50 ps, respectively, as well by the laser probing method with a spatial resolution of 20 μm and an exposure time of 180 ps. In the course of foil explosion, rapidly expanding objects resembling the core and corona of an exploded wire were observed. To this end, it is shown that the core of the exploded foil has a complicated time-varying structure.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2016

Layer-by-Layer Analysis of the Thickness Distribution of Silicon Dioxide in the Structure SiO{sub 2}/Si(111) by Inelastic Electron Scattering Cross-Section Spectroscopy

The SiO{sub 2}-concentration profile in the structure SiO{sub 2}/Si(111) is determined from experimental spectra of the cross section for the inelastic scattering of reflected electrons in the primary electron energy range from 300 to 3000 eV. The spectra are analyzed with the use of a proposed algorithm and developed computer program for simulating the spectra of the cross section for the inelastic scattering of reflected electrons for layered structures with an arbitrary number of layers, arbitrary thickness, and variable concentration of components in each layer. The best agreement between the calculated and experimental spectra is attained by varying the silicon dioxide and silicon concentrations in each layer. The results obtained can be used for profiling film-substrate structures with an arbitrary composition.

36 MATERIALS SCIENCE↗
DOE OSTI2017

On the laser lift-off of lightly doped micrometer-thick n-GaN films from substrates via the absorption of IR radiation in sapphire

The intense absorption of CO{sub 2} laser radiation in sapphire is used to separate GaN films from GaN templates on sapphire. Scanning of the sapphire substrate by the laser leads to the thermal dissociation of GaN at the GaN/sapphire interface and to the detachment of GaN films from the sapphire. The threshold density of the laser energy at which n-GaN started to dissociate is 1.6 ± 0.5 J/cm{sup 2}. The mechanical-stress distribution and the surface morphology of GaN films and sapphire substrates before and after laser lift-off are studied by Raman spectroscopy, atomic-force microscopy, and scanning electron microscopy. A vertical Schottky diode with a forward current density of 100 A/cm{sup 2} at a voltage of 2 V and a maximum reverse voltage of 150 V is fabricated on the basis of a 9-μm-thick detached n-GaN film.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Magnetotransport Spectroscopy of the Interface, Quantum Well, and Hybrid States in Structures with 16-nm-Thick Multiple HgTe Layers

The longitudinal and Hall components of the resistivity tensor are measured in structures with multiple HgTe layers 16 nm thick in magnetic fields to 12 T at temperatures from 1.5 to 300 K. The slope of the magnetic-field dependence of the Hall resistance is found to change its sign at a certain critical temperature T{sub c} = 5 and 10 K in the two studied samples, which indicates the presence of two types of charge carriers and a change in the relation between their contributions to the Hall resistance with temperature. The low critical temperature and manifestation of the “two-component” nature of the Hall curves only at T > T{sub c} prove that the ground state of the system at T = T{sub c} is gapless. At higher temperatures (20 K < T < 200 K), the Hall concentration is proportional to the temperature with good accuracy. The description of the charge-carrier dispersion laws by the 8-band kp model taking into account Γ{sub 8}-band-edge splitting caused by mechanical stresses, which forms both types of state in HgTe, makes it possible to quantitatively describe the observed magnetotransport features. It is shown that they are associated with the simultaneous filling of electron and hole states formed as a result of mixing interface states responsible for the topological-insulator phase and the quantum-confined states in the Γ{sub 8} band.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗