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At least 1,693 records · Page 94

Lattice anharmonicity effects in fluorite oxide single crystals and anomalous increase in phonon lifetime in ceria at elevated temperature

Here, we investigate the temperature dependence of the frequency and linewidth of the triply degenerate T 2g zone-centered optical phonon in flux-grown ceria and hydrothermally synthesized thoria single crystals from room temperature to 1273 K using Raman spectroscopy. Both crystals exhibit an expected increase in the phonon linewidth with temperature due to enhanced phonon–phonon scattering. However, ceria displays an anomalous linewidth reduction in the temperature range of 1023–1123 K. First-principles phonon linewidth calculations considering cubic and quartic phonon interactions within temperature-independent phonon dispersion fail to describe this anomaly. A parameterization of the temperature-dependent second-order interatomic force constants based on previously reported phonon dispersion measured at room and high temperatures predicts a deviation from the monotonic linewidth increase, albeit at temperatures lower than those observed experimentally for ceria. The qualitative agreement in the trend of temperature-dependent linewidth suggests that lattice anharmonicity-induced phonon renormalization plays a role in phonon lifetime. Specifically, a change in the overlap between softened acoustic and optical branches in the dispersion curve reduces the available phonon scattering phase space of the Raman-active mode at the zone center, leading to an increased phonon lifetime within a narrow temperature interval. These findings provide insights into higher-order anharmonic interactions in ceria and thoria, motivating further investigations into the role of anharmonicity-induced phonon renormalization on phonon lifetimes at high temperatures.

11 - NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗

Large magnetoresistance and first-order phase transition in antiferromagnetic single-crystalline EuAg 4 Sb 2

Here, we present the results of a thorough investigation of the physical properties of EuAg 4 Sb 2 single crystals using magnetization, heat capacity, and electrical resistivity measurements. High-quality single crystals, which crystallize in a trigonal structure with space group 𝑅⁢$\bar{3}$𝑚, were grown using a conventional flux method. Temperature-dependent magnetization measurements along different crystallographic orientations confirm two antiferromagnetic phase transitions around 𝑇 𝑁⁢1 = 10.5K and 𝑇 𝑁⁢2 = 7.5K. Isothermal magnetization data exhibit several metamagnetic transitions below these transition temperatures. Antiferromagnetic phase transitions in EuAg 4 Sb 2 are further confirmed by two sharp peaks in the temperature-dependent heat capacity data at 𝑇 𝑁⁢1 and 𝑇 𝑁⁢2 , which shift to lower temperature in the presence of an external magnetic field. Our systematic heat capacity measurements utilizing a long-pulse and single-slope analysis technique allow us to detect a first-order phase transition in EuAg 4 Sb 2 at 7.5 K. The temperature-dependent electrical resistivity data also manifest two features associated with magnetic order. The magnetoresistance exhibits a broad hump due to a field-induced metamagnetic transition. Remarkably, the magnetoresistance keeps increasing without showing any tendency to saturate as the applied magnetic field increases, and it reaches ∼20 000% at 1.6 K and 60 T. At high magnetic fields, several magnetic quantum oscillations are observed, indicating a complex Fermi surface. A large negative magnetoresistance of about −55% is also observed near 𝑇 𝑁⁢1 . Moreover, the 𝐻−𝑇 phase diagram constructed using magnetization, heat capacity, and magnetotransport data indicates complex magnetic behavior in EuAg 4 Sb 2 .

36 MATERIALS SCIENCE↗

Dependence of magnetomechanical performance of CoGaxFe2-xO4 on temperature variation

The temperature dependence of the magnetoelastic properties of the CoGa{sub x}Fe{sub 2-x}O{sub 4} system (for x = 0.0, 0.2, and 0.4) has been studied. It has been shown that increase in temperature resulted in reduced magnetostrictive hysteresis. For both CoGa{sub 0.2}Fe{sub 1.8}O{sub 4} and CoGa{sub 0.4}Fe{sub 1.6}O{sub 4}, the measured magnetostriction amplitudes were higher at 250 K than at 150 K. It was also shown that the temperature stability of magnetostriction in CoGa{sub 0.2}Fe{sub 1.8}O{sub 4} is higher than that of the other compositions studied which is important for sensor applications. The highest strain sensitivity was obtained for CoGa{sub 0.2}Fe{sub 1.8}O{sub 4} at 250 K. Results demonstrate the possibility of tailoring magnetomechanical properties of the material to suit intended applications under varying temperature conditions.

36 MATERIALS SCIENCE↗

Influence of Magnetite Nanoparticles on the Dielectric Properties of Metal Oxide/Polymer Nanocomposites Based on Polypropylene

Structure and dielectric properties of polymer nanocomposites based on isotactic polypropylene and iron oxide (Fe{sub 3}O{sub 4}) nanoparticles are studied. Distribution of magnetite nanoparticles in a polymer matrix was studied by scanning electron microscopy (SEM, Carl Zeiss). Dielectric properties of nanocomposites were examined by means of E7-21 impedance spectrometer in the frequency range of 10{sup 2}–10{sup 6} Hz and temperature interval of 298–433 K. The frequency and temperature dependences of the dielectric permittivity ε, as well as the temperature dependence of log (ρ) were constructed. It is shown that introduction of the magnetite (Fe{sub 3}O{sub 4}) nanoparticles into a polypropylene matrix increases the dielectric permittivity of nanocomposites. An increase in the dielectric permittivity is explained by the increase in the polarization ability of nanocomposites. It is found that a decrease in the specific resistance with increasing temperature up to 318 K is associated with an increase in the ionic conductivity of nanocomposites. An increase in the resistance at temperatures higher than 358 K is due to the destruction of the crystalline phase of the polymer, as a result of which the distance between the Fe{sub 3}O{sub 4} nanoparticles increases.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Electron transport in unipolar InGaN/GaN multiple quantum well structures grown by NH{sub 3} molecular beam epitaxy

Unipolar-light emitting diode like structures were grown by NH{sub 3} molecular beam epitaxy on c plane (0001) GaN on sapphire templates. Studies were performed to experimentally examine the effect of random alloy fluctuations on electron transport through quantum well active regions. These unipolar structures served as a test vehicle to test our 2D model of the effect of compositional fluctuations on polarization-induced barriers. Variables that were systematically studied included varying quantum well number from 0 to 5, well thickness of 1.5 nm, 3 nm, and 4.5 nm, and well compositions of In{sub 0.14}Ga{sub 0.86}N and In{sub 0.19}Ga{sub 0.81}N. Diode-like current voltage behavior was clearly observed due to the polarization-induced conduction band barrier in the quantum well region. Increasing quantum well width and number were shown to have a significant impact on increasing the turn-on voltage of each device. Temperature dependent IV measurements clearly revealed the dominant effect of thermionic behavior for temperatures from room temperature and above. Atom probe tomography was used to directly analyze parameters of the alloy fluctuations in the quantum wells including amplitude and length scale of compositional variation. A drift diffusion Schrödinger Poisson method accounting for two dimensional indium fluctuations (both in the growth direction and within the wells) was used to correctly model the turn-on voltages of the devices as compared to traditional 1D simulation models.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

Volume reflecting heat shields for entry into the giant planet atmospheres

The performance of a volume reflecting or backscattering silica heat shield is examined for an entry probe into the severe radiative environments of Saturn, Uranus, and Jupiter. The governing equations for the material response are solved numerically and include the effects of temperature-dependent thermal properties, temperature- and wavelength-dependent radiative properties, and surface recession caused by thermochemical ablation. The influence of the scattering properties on backface temperature is examined, and results are presented which show the required heat-shield thickness for the entry trajectories selected.

Howe, J. T.↗

Synthesis, crystal structure investigation and magnetism of the complex metal-rich boride series Cr{sub x}(Rh{sub 1-y}Ru{sub y}){sub 7-x}B{sub 3} (x=0.88-1; y=0-1) with Th{sub 7}Fe{sub 3}-type structure

Powder samples and single crystals of the new complex boride series Cr{sub x}(Rh{sub 1-y}Ru{sub y}){sub 7-x}B{sub 3} (x=0.88-1; y=0-1) have been synthesized by arc-melting the elements under purified argon atmosphere on a water-cooled copper crucible. The products, which have metallic luster, were structurally characterized by single-crystal and powder X-ray diffraction as well as EDX measurements. Within the whole solid solution range the hexagonal Th{sub 7}Fe{sub 3} structure type (space group P6{sub 3}mc, no. 186, Z=2) was identified. Single-crystal structure refinement results indicate the presence of chromium at two sites (6c and 2b) of the available three metal Wyckoff sites, with a pronounced preference for the 6c site. An unexpected Rh/Ru site preference was found in the Ru-rich region only, leading to two different magnetic behaviors in the solid solution: The Rh-rich region shows a temperature-independent (Pauli) paramagnetism whereas an additional temperature-dependent paramagnetic component is found in the Ru-rich region. - Graphical abstract: The new complex boride series Cr{sub x}(Rh{sub 1-y}Ru{sub y}){sub 7-x}B{sub 3} (x=0.88-1; y=0-1) has been synthesized by arc melting the elements under purified argon atmosphere. Beside the 3d/4d site preference within the whole solid solution, an unexpected Rh/Ru site preference was found in the Ru-rich region only, leading to two different magnetic behaviors: The Rh-rich region shows a temperature-independent (Pauli) paramagnetism whereas an additional temperature-dependent paramagnetic component is found in the Ru-rich region. Highlights: Black-Right-Pointing-Pointer Synthesis of a new boride series fulfilling Vegard Acute-Accent s rule. Black-Right-Pointing-Pointer 3d/4d site preference. Black-Right-Pointing-Pointer Unexpected Ru/Rh site preference. Black-Right-Pointing-Pointer Rh-rich region is Pauli paramagnetic. Black-Right-Pointing-Pointer Ru-rich region is Pauli and temperature-dependent paramagnetic.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Combustion synthesis and luminescence properties of yellow-emitting phosphors Ca{sub 2}BO{sub 3}Cl:Eu{sup 2+}

Graphical abstract: A yellow-emitting phosphor Ca{sub 2}BO{sub 3}Cl:Eu{sup 2+} was firstly synthesized by the solution-combustion method. The photoluminescence excitation and emission spectra, temperature dependence of luminescence intensity, and luminescence lifetime of the phosphor were investigated. Highlights: Black-Right-Pointing-Pointer Ca{sub 2}BO{sub 3}Cl:Eu{sup 2+} phosphor was synthesized by a solution-combustion method. Black-Right-Pointing-Pointer Ca{sub 2}BO{sub 3}Cl:Eu{sup 2+} showed an intense yellow emission band centered at 569 nm with the CIE coordinate of (0.453, 0.526). Black-Right-Pointing-Pointer The temperature dependent luminescence property and mechanism of Ca{sub 2}BO{sub 3}Cl:Eu{sup 2+} were studied. -- Abstract: Yellow-emitting phosphor Ca{sub 2}BO{sub 3}Cl:Eu{sup 2+} was synthesized by a solution-combustion method. The phase structure and microstructure were determined by the X-ray diffraction (XRD) and scanning electron microscope (SEM) analysis, respectively. The as-prepared Ca{sub 2}BO{sub 3}Cl:Eu{sup 2+} phosphor absorbed near ultraviolet and blue light of 320-500 nm, and showed an intense yellow emission band centered at 569 nm with the CIE coordinate of (0.453, 0.526). The lifetime of Eu{sup 2+} ions in Ca{sub 2}BO{sub 3}Cl:Eu{sup 2+} phosphor was measured, furthermore the temperature dependent luminescence property and mechanism were studied, which also testified that the present phosphor had a promising potential for white light-emitting diodes.

36 MATERIALS SCIENCE↗

Temperature-driven changes in the Fermi surface of graphite

Here we report on temperature-dependent size and anisotropy of the Fermi pockets in graphite revealed by magnetotransport measurements. The magnetoresistances (MRs) obtained in fields along the c axis obey an extended Kohler's rule, with the carrier density following the prediction of a temperature-dependent Fermi energy, indicating a change in the Fermi pocket size with temperature. The angle-dependent magnetoresistivities at a given temperature exhibit a scaling behavior. The scaling factor that reflects the anisotropy of the Fermi surface is also found to vary with temperature. Our results demonstrate that temperature-driven changes in Fermi surface can be ubiquitous and need to be considered in understanding the temperature-dependent carrier density and MR anisotropy in semimetals.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Magnetic properties of the rare-earth ferroborate SmFe{sub 3}(BO{sub 3}){sub 4}

The magnetic properties of trigonal antiferromagnet SmFe{sub 3}(BO{sub 3}){sub 4} are studied experimentally and theoretically. The measured characteristics are considered in terms of a theoretical approach based on the molecular field approximation and a crystal field model for a rare-earth ion. The temperature dependences of the initial magnetic susceptibility and the field and temperature dependences of magnetization in fields up to 5 T are described, and the anomaly in the magnetization curve for B Up-Tack c near 1 T, which points to a first-order phase transition, is analyzed.

36 MATERIALS SCIENCE↗

Twinning and Dislocation Pileups in Heavily Implanted LiNbO3

The nature of a striking pattern of extended defects formed by very high dose implantation of helium in a complex oxide, for example, ferroelectricz-cut LiNbO{sub 3}, is studied. After irradiation, a high concentration of defects is found to collect and create a network of thick prismatic planar defects, which have typical dimensions of {approx}1.5 {micro}m and 200 nm parallel and perpendicular to the z axis, respectively. This defect network and its effect on the lattice were studied using a set of x-ray and electron microscopy probes of the lattice structure and spatial variation. Optical microscopy shows that there is strong temperature dependence for forming the network; the density of these extended defects reaches a maximum value for an annealing temperature of 250 C but is fully eliminated by a temperature of 380 C. High-resolution transmission electron microscopy studies indicate that these extended defects are probably localized twinning and dislocation pileups due to plastic deformation of the lattice to relieve He-implantation-induced stress. During this deformation, He accumulates at the twin boundaries. The study also shows that the He interstitials evolve into bubbles causing high stress and resulting in a formation of thick prismatic planar defects. Finally, a mechanism is proposed for defect creation and elimination.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Spin-lattice and spin-electronic interactions in the van der Waals semiconductor C⁢o 2 ⁢P 2 ⁢S 6

Here, we report the results of a temperature-dependent reflection spectroscopy study, across a wide energy range (~ 0.01 to 3 eV), of unsubstituted and 40% Zn substituted for Co, for the transition-metal phosphorus trichalcogenide, C⁢o 2 ⁢P 2 ⁢S 6 . We observe a transition from a paramagnetic to antiferromagnetic state with a Néel temperature at T N ~ 120 K that is completely suppressed in Zn-substituted samples. At 300 K we identify four narrow (~ 1 meV) infrared active phonon modes while at 70 K (below T N ) we observe that the low-energy phonons, dominated by Co motion, resolve into two modes. These low-energy modes are asymmetric, indicating coupling to a broad electronic continuum. We also report a broad (~ 30 meV) low-temperature infrared absorption band that appears near T N that we suggest is determined by a multiphonon-assisted 2-magnon absorption process. At 300 K in higher-energy spectra, we observe considerable absorption starting from 0.20 ± 0.02 eV which we associate with inter-C⁢o 2+ ion 3⁢d transitions. At temperatures below T N the number of electronic absorption bands increases from 4 to 6, indicating a lowering of the symmetry around the C⁢o 2+ ions. On substituting 40% Zn for Co, the antiferromagnetic transition is suppressed along with temperature-dependent changes in the phonon and electronic spectra. The temperature-dependent spectral changes indicate strongly correlated behavior between the infrared active lattice vibrations, the electronic excitations, and magnetism in unsubstituted C⁢o 2 ⁢P 2 ⁢S 6 .

2-dimensional systems↗

Spin Hall magnetoresistance at high temperatures

The temperature dependence of spin Hall magnetoresistance (SMR) in Pt/Y{sub 3}Fe{sub 5}O{sub 12} (YIG) bilayer films has been investigated in a high temperature range from room temperature to near the Curie temperature of YIG. The experimental results show that the magnitude of the magnetoresistance ratio induced by the SMR monotonically decreases with increasing the temperature and almost disappears near the Curie temperature. We found that, near the Curie temperature, the temperature dependence of the SMR in the Pt/YIG film is steeper than that of a magnetization curve of the YIG; the critical exponent of the magnetoresistance ratio is estimated to be 0.9. This critical behavior of the SMR is attributed mainly to the temperature dependence of the spin-mixing conductance at the Pt/YIG interface.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Magnetic susceptibility of (Bi{sub 2-x}Sb{sub x})Te{sub 3} (0 < x < 1) alloys in the temperature range 2 to 50 K

The superconducting quantum interferometer device with Josephson junctions (SQUID magnetometer) is used to study the temperature dependences of the magnetic susceptibility of (Bi{sub 2-x}Sb{sub x})Te{sub 3} (0 < x < 1) alloy crystals in the temperature range 2 to 50 K, at the magnetic field vector H orientations H perpendiular C{sub 3} and H Up-Tack C{sub 3} with respect to the crystal trigonal axis C{sub 3}. It is found that the magnetic susceptibility of the ion core of the samples under study is {chi}{sup G} = -0.35 Multiplication-Sign 10{sup -6} cm{sup 3}/g, the contribution of lattice defects to magnetic susceptibility can be disregarded, and the contribution of free carriers is of a diamagnetic nature in the entire studied temperature range. It is shown that the contribution of free carriers to the resulting magnetic susceptibility and its anisotropy can be described within the Pauli and Landau-Peierls approach. In calculating the magnetic susceptibility, taking into account the constant concentration of free carriers in the state of pronounced degeneracy, it is found that the temperature dependence of the anisotropic effective masses varies with crystal chemical composition. This is possibly associated with the complex structure of the valence band and its variation as the Sb{sub 2}Te{sub 3} content in the alloy increases.

36 MATERIALS SCIENCE↗

Electroluminescence of InGaAs/GaAs quantum-size heterostructures with (III, Mn)V and Ni ferromagnetic injectors

Electroluminescence characteristics of light-emitting diodes based on InGaAs/GaAs quantum well heterostructures with an injector layer made of ferromagnetic metal (Ni), semimetal compound (MnSb), or magnetic semiconductor (InMnAs) were comparatively studied. The general feature is electroluminescence quenching as the spacer layer thickness between a quantum well and a magnetic injector decreases. It was found that the temperature dependence of the electroluminescence in diodes with Ni and MnSb is caused by thermal ejection of carriers from the quantum well; in diodes with InMnAs, it is caused by the temperature dependence of the carrier concentration in magnetic semiconductor and thermal ejection of carriers from the quantum well in the high-temperature region.

36 MATERIALS SCIENCE↗

Postshock Thermally Induced Transformations in Experimentally Shocked Magnetite

We studied the effect of 973 K heating in argon atmosphere on the magnetic and structural properties of a magnetite-bearing ore, which was previously exposed to laboratory shock waves between 5 and 30 GPa. For this purpose magnetic properties were studied using temperature-dependent magnetic susceptibility, magnetic hysteresis and low-temperature saturation isothermal remanent magnetization. Structural properties of magnetite were analyzed using X-ray diffraction, high-resolution scanning electron microscopy and synchrotron-assisted X-ray absorption spectroscopy. The shock-induced changes include magnetic domain size reduction due to brittle and ductile deformation features and an increase in Verwey transition temperature due to lattice distortion. After heating, the crystal lattice is relaxed and apparent crystallite size is increased suggesting a recovery of lattice defects documented by a mosaic recrystallization texture. The structural changes correlate with modifications in magnetic domain state recorded by temperature-dependent magnetic susceptibility, hysteresis properties and low-temperature saturation isothermal remanent magnetization. In conclusion, these alterations in both, magnetic and structural properties of magnetite can be used to assess impact-related magnetic anomalies in impact structures with a high temperature overprint.

58 GEOSCIENCES↗

Physical properties of madocite: A quaternary chalcogenide with very low thermal conductivity

The madocite Pb{sub 17}(Sb{sub 0.75}As{sub 0.25}){sub 16}S{sub 41} was synthesized by reaction of binary compounds and densified using hot pressing. The optical band-gap, thermal stability, and temperature-dependent heat capacity and thermal conductivity are reported for the first time. The thermal properties are evaluated using the Debye model. The findings in this work lay the foundation for a more detailed understanding of the physical properties of this material, and is part of the continuing effort in investigating materials with new compositions that possess low thermal conductivity for potential low-cost thermal barrier coating and energy-related applications. - Graphical abstract: The report describes the synthesis and physical properties characterization of Pb{sub 17}(Sb{sub 0.75}As{sub 0.25}){sub 16}S{sub 41}, a quaternary chalcogenide with the madocite crystal structure that possesses a low thermal conductivity, for the first time. The compositions was synthesized by reaction of binary compounds and densified using hot pressing. Optical band-gap, thermal stability, and temperature-dependent heat capacity measurements are also discussed. - Highlights: • Pb{sub 17}(Sb{sub 0.75}As{sub 0.25}){sub 16}S{sub 41} was synthesized by reaction of binary compounds and densified using hot pressing. • We report the characterizations of this quaternary chalcogenide that possesses a low thermal conductivity for the first time. • The optical band-gap, thermal stability, and temperature-dependent heat capacity are also investigated for the first time.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Phonon-assisted optical absorption of SiC polytypes from first principles

Silicon carbide (SiC) is an indirect-gap semiconductor material widely used in electronic and optoelectronic applications. While experimental measurements of the phonon-assisted absorption coefficient of SiC across its indirect gap have existed for more than 50 years, theoretical investigations of phonon-assisted absorption have been hampered by their excessive computational cost. Here, in this work, we calculate the phonon-assisted temperature-dependent optical absorption spectra of the commonly occurring SiC polytypes (3C, 2H, 4H, 6H, and 15R), using first-principles approaches based on density functional theory and related techniques. We show that our results agree with experimentally determined absorption coefficients in the spectral region between the direct and indirect band gaps. The temperature dependence of the spectra can be well predicted with taking the temperature dependence of the band gaps into account. Lastly, we compare the spectra obtained with second-order perturbation theory to those determined by the special displacement method and we show that the full consideration of the electronic energy renormalization due to temperature is important to further improve the prediction of the phonon-assisted absorption in SiC. Our insights can be applied to predict the optical spectra of the less common SiC polytypes and other indirect-gap semiconductors in general.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗