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At least 1,693 records · Page 94
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DOE OSTI2018

Features of the Electron Mobility in the n-InSe Layered Semiconductor

The dependences of the Hall electron mobility of n-InSe single crystals grown by the Bridgman method on a sample’s technological history, temperature, electric field, doping, and illumination are experimentally investigated. It is established that at temperatures below room temperature, the dependences of the electron mobility on external factors, initial resistivity, and doping are anomalous, i.e., do not obey the theory of free carrier mobility in quasi-ordered crystalline semiconductors. The observed anomalies are attributed to partial disordering and fluctuation of the potential of free energy bands of the n-InSe single crystals and can be controlled by temperature, electric field, doping, and illumination.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2018

Effect of a por-Si Buffer Layer on the Structure and Morphology of Epitaxial In{sub x}Ga{sub 1 – x}N/Si(111) Heterostructures

Integrated heterostructures exhibiting nanocolumnar morphology of the In{sub x}Ga{sub 1 – x}N/Si(111) film are grown on a single-crystal silicon substrate (c-Si(111)) and a substrate with a nanoporous buffer sublayer (por-Si) by molecular-beam epitaxy with the plasma activation of nitrogen. Using a complex of structural and microscopic methods of analysis, it is shown that the growth of In{sub x}Ga{sub 1 – x}N nanocolumns on a nanoporous buffer layer offers a number of advantages over growth on c-Si. The por-Si substrate predetermines the preferential orientation of the growth of In{sub x}Ga{sub 1 – x}N nanocolumns closer to the Si(111) orientation direction and makes it possible to produce In{sub x}Ga{sub 1 – x}N nanocolumns with a higher degree of crystallographic uniformity and with a nanocolumn lateral size of ~40 nm unified over the entire surface. The growth of In{sub x}Ga{sub 1 – x}N nanocolumns on a por-Si layer yields a decrease in the strain components ε{sub xx} and ε{sub zz} and in the density of edge and screw dislocations compared to the corresponding parameters for In{sub x}Ga{sub 1 – x}N nanocolumns grown on c-Si. The In{sub x}Ga{sub 1 – x}N nanocolumnar layer fabricated on por-Si exhibits a 20% higher charge-carrier concentration compared to the layer grown on c-Si as well as a higher intensity of the photoluminescence quantum yield (+25%).

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2018

XAFS Investigation of Nanoparticle Formation in {sup 64}Zn{sup +} Ion Implanted and Thermo Oxidized Si

The single crystal CZ n-Si(100) substrates with electron concentration n{sub o} = 5 × 10{sup 16} cm{sup −3} were implanted by {sup 64}Zn{sup +} ions with dose of 5 × 10{sup 16} cm{sup −2} and energy of 50 keV. During implantation the ion beam current density was less than 0.5 μA/cm{sup 2} to avoid the substrate magnetically heating. After implantation, the plates were subjected to isochronous for one hour heat treatment in oxygen atmosphere at temperatures from 400 up to 1000{sup o}C with a step of 100{sup o}C. Zn K-edge EXAFS spectra were measured in fluorescent mode. Si(111) channel-cut monochromator was used for energy scanning; energy resolution ΔE/E = 2 × 10{sup –4}. According to Zn K-edge EXAFS data, all Zn implanted in Si at 900{sup o}C is fully oxidized: an absolute maximum of EXAFS Fourier transform at R ~ 1.6 Å corresponds to Zn–O distance. Based on XANES data, we suggest an interaction between implanted Zn atoms and Si support.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2018

Heteroepitaxy of GaP Nucleation Layers on Si by Molecular Beam Epitaxy

The growth of single crystalline GaP nucleation and buffer layers on Si substrates by molecular-beam epitaxy is demonstrated. The use of two different regimes of migration-enhanced epitaxy was studied. It was found that p–n junctions can be created due to the interdiffusion during the growth of GaP layer on p-type Si substrate.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2019

Study of the Effect of Doping with Iron on the Luminescence of Zinc-Selenide Single Crystals

The effect of doping with iron (thermal diffusion from a surface) on the luminescence of zinc-selenide single crystals in the wavelength range 0.44–0.72 μm and on the spatial distribution of luminescence centers are studied. By means of two-photon confocal microscopy, planar and volume maps of edge (exciton) and impurity–defect luminescence in the above-indicated spectral range are obtained for both doped and undoped crystals. It is shown that crystal regions containing a high iron concentration exhibit low-intensity luminescence in this range. It is found that, in the process of diffusion, several types of impurity–defect centers distributed in a complex way within the crystal bulk are formed. The nature of these centers is discussed.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2019

Influence of a por-Si Buffer Layer on the Optical Properties of Epitaxial In{sub x}Ga{sub 1 –x}N/Si(111) Heterostructures with a Nanocolumnar Film Morphology

Integrated heterostructures exhibiting a nanocolumnar morphology of the In{sub x}Ga{sub 1 –x}N film are grown on a single-crystal silicon substrate (c-Si(111)) and a substrate with a nanoporous buffer sublayer (por-Si) by molecular-beam epitaxy with the plasma activation of nitrogen. Using a complex of spectroscopic methods of analysis, it is shown that the growth of In{sub x}Ga{sub 1 –x}N nanocolumns on the por-Si buffer layer offer a number of advantages over growth on the c-Si substrate. Raman and ultraviolet spectroscopy data support the inference about the growth of a nanocolumn structure and agree with the previously obtained X-ray diffraction (XRD) data indicative of the strained, unrelaxed state of the In{sub x}Ga{sub 1 –x}N layer. The growth of In{sub x}Ga{sub 1 –x}N nanocolumns on the por-Si layer positively influences the optical properties of the heterostructures. At the same half-width of the emission line in the photoluminescence spectrum, the emission intensity for the heterostructure sample grown on the por-Si buffer layer is ~25% higher than the emission intensity for the film grown on the c-Si substrate.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2019

Dislocation-Related Photoluminescence in Silicon Implanted with Germanium Ions

The influence exerted by the conditions of the post-implantation annealing of silicon implanted with germanium ions on how luminescence centers are formed is studied. Measurements by the technique of the Rutherford backscattering of medium- and high-energy ions demonstrates that implantation with 1-MeV germanium ions at a dose of 1.5 × 10{sup 14} cm{sup –2} does not lead to the amorphization of single-crystal silicon. It is found that subsequent high-temperature annealing of the implanted samples in a chlorine-containing atmosphere at a temperature of 1100°C for 0.5–1.5 h gives rise to so-called D1 and D2 dislocation-related luminescence lines with wavelengths of 1.54 and 1.42 μm. With increasing annealing duration, the intensity of the D1 line decreases and that of D2 remains constant, but the D1 line dominates in all the spectra. The possible factors responsible for a decrease in the intensity of the D1 line and, in particular, the diffusion of germanium atoms and the formation of a silicon–germanium solid solution are discussed.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2019

Anharmonicity of Lattice Vibrations in Bi{sub 2}Se{sub 3} Single Crystals

The temperature dependences of the Raman-active frequencies E{sub g}{sup 2}, A{sub 1g}{sup 2} in layered Bi{sub 2}Se{sub 3} single crystals are studied. The contribution of the thermal expansion to a temperature variation in the frequencies is determined. The decay of the anisotropy of the elastic properties in layered Bi{sub 2}Se{sub 3} single crystals due to strong spin–orbit coupling is shown. The Gruneisen-mode parameters for phonons E{sub g}{sup 2} and A{sub 1g}{sup 2} are calculated. Systematic features in the dependences of vibrational frequencies on the atomic masses in layered Bi{sub 2}Te{sub 3}, Bi{sub 2}Se{sub 3}, and Sb{sub 2}Te{sub 3} single crystals are determined.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2019

Structure and Properties of Zn-Implanted Si Near-Surface Layer Modification Depending on Irradiation Fluence of {sup 132}Xe{sup 26+} Ions with Energy of 167 MeV

Single-crystal n-Si(100) wafers are implanted with {sup 64}Zn{sup +} ions with an energy of 50 keV and dose of 5 × 10{sup 16} cm{sup –2}. Then the samples are irradiated with {sup 132}Xe{sup 26+} ions with an energy of 167 MeV in the range of fluences from 1 × 10{sup 12} to 5 × 10{sup 14} cm{sup –2}. The surface and cross section of the samples are visualized by scanning electron microscopy and transmission electron microscopy. The distribution of implanted Zn atoms is studied by time-of-flight secondary-ion mass spectrometry. After irradiation with Xe, surface pores and clusters consisting of a Zn–ZnO mixture are observed at the sample surface. In the amorphized subsurface Si layer, zinc and zinc-oxide phases are detected. After irradiation with Xe with a fluence of 5 × 10{sup 14} cm{sup –2}, no zinc or zinc-oxide clusters are detected in the samples by the methods used in the study.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2019

Optical and Structural Properties of Ag and c-Si Nanostructures Formed During the Metal-Assisted Chemical Etching of Silicon

This study consisting of two parts is concerned with the features of the three-stage process of the metal-assisted chemical etching (MACE) of silicon. This process is used to fabricate silicon nanostructures. In the first part of this work, a layer of self-assembled Ag nanoparticles chemically deposited from a solution on the surface of single-crystal silicon (c-Si) (MACE stage 1) was studied, and the second part includes of investigation of Si nanostructures formed in stages 2 and 3. By means of spectroscopic ellipsometry (in the range of wavelengths λ = 250–900 nm), the pseudodielectric functions of the nanostructures were determined and compared for all the three stages of the MACE process. In addition, for the Si nanostructures, the parameters of layers (the thickness and void fraction) were calculated in the context of the multilayer optical model, with the use of Bruggeman’s effective-medium approximation and fitting procedures.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2019

The Hall and Seebeck Effects in Bismuth Thin Films on Mica Substrates in the Temperature Range of 77–300 K

The effects of film thickness and block size on the Hall and Seebeck effects in bismuth films on mica substrates are analyzed using experimental data. A preferential decrease in the electron contribution with a decrease in the film thickness and a preferential decrease in the hole contribution with a decrease in the block size are established. The Hall and Seebeck coefficients are calculated using the classical size effect with regard to carrier scattering at block boundaries and anisotropy of the properties of carriers. In the calculation, the electron and hole mobility components and their concentration in a bismuth single crystal are used and the crystallographic orientation of the film crystal are taken into account. The results of the calculation are in good agreement with the experimental data. It is concluded that the value and sign of the Hall and Seebeck coefficients in bismuth films are determined by the competition of the classical size effect and scattering at block boundaries.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2019

Thermoelectric Properties of Sb 2 Te 3 -Based Nanocomposites with Graphite

Antimony-telluride-based nanocomposite samples containing different weight fractions of graphite (Sb 2 Te 3 + x% graphite, where x = 0.0, 0.5, 1.0, and 2.5%) are synthesized and studied. The samples are produced by a solid-state reaction with the use of a ball mill. X-ray diffraction measurements show that the Sb 2 Te 3 phase is present in the nanocomposites. All of the diffraction peaks are identified as corresponding to the rhombohedral structure of symmetry R 3-bar m. No additional peaks related to graphite are observed because of its low content. Moreover, the X-ray data show the insolubility of graphite in Sb 2 Te 3 : the peaks related to Sb 2 Te 3 remain unchanged upon the addition of graphite. The thermal conductivity, thermoelectric power, and resistivity of the samples are studied in the temperature range 80 K ≤ T ≤ 320 K. The thermal conductivity k of the nanocomposite decreases several times compared to the thermal conductivity of single-crystal Sb 2 Te 3 and reaches k ≈ 0.95 W m -1 K -1 at x = 0.5%. The parameter k unsteadily depends on the content of graphite. The thermoelectric power of the nanocomposites with graphite at x = 1.0% is higher compared to that of nanostructured Sb 2 Te 3 .

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2019

Thermoelectric Properties of Semimetal and Semiconductor Bi{sub 1 –x}Sb{sub x} Foils and Wires

The results of experimental investigations into the thermoelectric properties (electrical conductivity, thermoelectric power, and thermal conductivity) of microtextured foils and single-crystal wires based on semimetal and semiconductor Bi{sub 1 –x}Sb{sub x} alloys are presented in the temperature range of 4.2–300 K. It is found that the band gap ΔE in Bi–17 at % Sb wires increases with decreasing wire diameter d, which is a manifestation of the quantum-size effect. At low temperatures (T < 50 K), in the wires with d < 400 nm, the electrical conductivity increases due to the significant contribution of highly conductive surface states characteristic of topological insulators. It is found for the first time that the thermal conductivity of semimetal Bi–3 at % Sb foils at low temperatures is two orders of magnitude lower, and that of semiconductor Bi–16 at % Sb foils one order of magnitude lower, than that in bulk samples of the corresponding composition due to significant phonon scattering at grain boundaries and surfaces. This effect leads to considerable enhancement of the thermoelectric figure-of-merit ZT and can be used in miniature low-temperature thermoelectric energy converters.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2019

Features of Defect Formation in Nanostructured Silicon under Ion Irradiation

Nanostructured silicon is irradiated by Si{sup +} and He{sup +} ions with energies of 200 and 150 keV, respectively. Destruction of the structure of irradiated samples and the accumulation of defects at different irradiation fluences are investigated by Raman scattering. It is shown that single-crystal silicon films are amorphized under irradiation at 0.7 displacements per atom. However, at 0.5 displacements per atom, porous silicon does not completely amorphize and the Raman spectra contain a weak signal of the amorphous silicon phase along with a pronounced signal of the crystalline silicon phase. The size of nanocrystals in the structure of porous silicon at different irradiation fluences is estimated.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2019

Analysis of the Optical Properties of Plastically Deformed ZnS(O) Using Band-Anticrossing Theory

The cathodoluminescence and absorption of plastically deformed ZnS(O) single crystals are investigated in the light of band-anticrossing theory. The difference in the oxygen content in the surface layer and in the sample bulk is found using a scanning electron microscope and according to cathodoluminescence data. This fact explains the specifics of the spectral position of the fundamental absorption edge and exciton spectra. The shift dynamics of the bands of self-activated luminescence on deep A centers (SA luminescence) during deformation recrystallization with an increase in the dissolved oxygen concentration is presented. Restriction of the spectral range of the appearance of self-activated luminescence at shallow levels—“edge” luminescence—is established. The nature of the emission bands in the wavelength ranges of 336–350 and 364–390 nm is established. These results refine the energy model of ZnS(O) crystals and can be useful in the case of the practical use of their structure-sensitive properties.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2019

Urbach Rule in MnGa{sub 2}Se{sub 4} Single Crystals Upon Optical Absorption

The Urbach rule in MnGa{sub 2}Se{sub 4} single crystals is studied. It is found that the long-wavelength absorption tail obeys the Urbach rule at photon energies in the range 2.1–2.2 eV. It is shown that a strong electron–phonon interaction exists in MnGa{sub 2}Se{sub 4} single crystals.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2019

Investigation into the Influence of a Buffer Layer of Nanoporous Silicon on the Atomic and Electronic Structure and Optical Properties of A{sup III}N/por-Si Heterostructures Grown by Plasma-Activated Molecular-Beam Epitaxy

The influence of using a buffer sublayer of nanoporous por-Si on the morphological, physical, and structural properties of nanocolumnar In{sub x}Ga{sub 1 –x}N structures fabricated by plasma-activated molecular-beam epitaxy on single-crystal Si(111) substrates is shown. Using a set of structural-spectroscopic analytical methods, the electronic structure of the grown heterostructures, morphology, and optical properties are investigated, and the interrelations between them are established. It is shown that the use of a por-Si sublayer makes it possible to attain a more uniform distribution of diameters of In{sub x}Ga{sub 1 –x}N nanocolumns and to increase the photoluminescence intensity of the latter.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2019

Effect of X-Ray Radiation on the Optical Properties of Photorefractive Bismuth-Silicate Crystals

The results of investigations of the optical-absorption spectra of bismuth-silicate (Bi{sub 12}SiO{sub 20}) single crystals are presented. The band-gap width and the characteristic Urbach energy are determined. The effect of preliminary X-ray irradiation on the behavior of the experimental spectral dependences and the values of the characteristic parameters induced by the bismuth-silicate defect structure is established.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗