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At least 1,693 records · Page 94
All sourcesNASA NTRSDOE OSTI
DOE OSTI2022

The role of Cr concentration and temperature on cavity swelling with co-injected helium in dual-ion irradiated Fe and Fe-Cr alloys

The level of chromium plays an essential role in irradiation tolerance of Fe-Cr ferritic alloys. However, conflicting results have been reported regarding the dependence of cavity swelling under irradiation on Cr level and temperature. Here, we have performed a comprehensive set of simultaneous dual-ion (Ni + He) irradiations to high dose (~30 displacements per atom, dpa) at 400–550 °C on a series of ultra-high purity Fe and Fe-Cr binary alloys (3–14 wt.%Cr). Helium co-implantation rates of 0.1 and 10 appm He/dpa were selected to examine He synergistic effects relevant for fission and fusion reactor conditions, respectively. Cavities were observed in all irradiated samples by transmission electron microscopy. The results show that higher He implantation rate causes a shift in the swelling peak to higher temperatures in both Fe and Fe-Cr alloys. When assuming smaller cavities as biased sinks, the non-monotonic nature of the cavity swelling behavior is related to the ratio of biased to unbiased point defect sink strengths. Cr-enriched precipitates were observed in Fe-14Cr irradiated at 400 °C by atom probe tomography. Our analysis suggests the formation of Cr-enriched precipitates could suppress cavity swelling for Fe-Cr alloys with Cr content above 10 wt%.

36 MATERIALS SCIENCE↗
NASA NTRS1980

Theory of positronium formation and positron emission at metal surfaces

The range of metallic surface processes available to the implanted positron is examined with a view to bare positron escape, positron surface state trapping, surface state detrapping, and positronium atom conversion. The stopping distance and its rms deviation are calculated. The effect of the elastic positron-ion core scattering, and the finite temperature corrections in the positron-phonon scattering are included. Overall conversion and emission efficiencies are calculated by solving an appropriate diffusion equation with boundary conditions set by the branching ratios for the surface processes. The temperature and incident energy dependence of the results for positronium atom conversion and positron emission efficiency are compared to experimental data.

Nieminen, R. M.↗
DOE OSTI2014

SU-E-J-156: Preclinical Inverstigation of Dynamic Tumor Tracking Using Vero SBRT Linear Accelerator: Motion Phantom Dosimetry Study

Purpose: Following the ‘end-to-end testing’ paradigm of Dynamic Target Tracking option in our Image-Guided dedicated SBRT VeroTM linac, we verify the capability of the system to deliver planned dose to moving targets in the heterogeneous thorax phantom (CIRSTM). The system includes gimbaled C-band linac head, robotic 6 degree of freedom couch and a tumor tracking method based on predictive modeling of target position using fluoroscopically tracked implanted markers and optically tracked infrared reflecting external markers. Methods: 4DCT scan of the motion phantom with the VisicoilTM implanted marker in the close vicinity of the target was acquired, the ‘exhale’=most prevalent phase was used for planning (iPlan by BrainLabTM). Typical 3D conformal SBRT treatment plans aimed to deliver 6-8Gy/fx to two types of targets: a)solid water-equivalent target 3cm in diameter; b)single VisicoilTM marker inserted within lung equivalent material. The planning GTV/CTV-to-PTV margins were 2mm, the block margins were 3 mm. The dose calculated by MonteCarlo algorithm with 1% variance using option Dose-to-water was compared to the ion chamber (CC01 by IBA Dosimetry) measurements in case (a) and GafchromicTM EBT3 film measurements in case (b). During delivery, the target 6 motion patterns available as a standard on CIRSTM motion phantom were investigated: in case (a), the target was moving along the designated sine or cosine4 3D trajectory; in case (b), the inserted marker was moving sinusoidally in 1D. Results: The ion chamber measurements have shown the agreement with the planned dose within 1% under all the studied motion conditions. The film measurements show 98.1% agreement with the planar calculated dose (gamma criteria: 3%/3mm). Conclusion: We successfully verified the capability of the SBRT VeroTM linac to perform real-time tumor tracking and accurate dose delivery to the target, based on predictive modeling of the correlation between implanted marker motion and external surrogate of breathing motion.

60 APPLIED LIFE SCIENCES↗
DOE OSTI2010

Control of emission wavelength for InGaAs/GaAs quantum wells and laser structures on their basis by means of proton irradiation

Features of controlling the wavelength of emission from laser heterostructures with strained InGaAs/GaAs quantum wells by irradiation with medium-energy (with the energy as high as 150 keV) protons are studied. It is established that irradiation with H{sup +} ions and subsequent thermal annealing at a temperature of 700 deg. C make it possible to decrease the wavelength of emission from quantum wells. As the dose of ions is increased from 10{sup 13} to 10{sup 16} cm{sup -2}, the magnitude of change in the wavelength increases to 20 nm. Starting with a dose of 10{sup 15} cm{sup -2}, a significant decrease in the intensity of emission is observed. The optimum dose of H{sup +} ions (6 x 10{sup 14} cm{sup -2}) and annealing temperature (700 deg. C) for modifying the InGaAs/GaAs/InGaP laser structures are determined; it is shown that, in this case, one can obtain a shift of {approx}(8-10) nm for the wavelength of laser radiation with low losses in intensity with the quality of the surface of laser structures retained. The observed 'blue' shift is caused by implantation-stimulated processes of intermixing of the In and Ga atoms at the InGaAs/GaAs interface.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Half-life measurement of the 199-keV isomeric state in Ga 76

Background: Isomeric states in atomic nuclei are a sensitive probe of their underlying microscopic structure and can be used to study the evolution of shell structure far from stability. Recent studies have identified and provided detailed spectroscopy of isomers in neutron-rich nuclei with Z = 28-50. Isomeric states in the odd-odd gallium isotopes have been reported for all gallium isotopes from A = 72 to A = 80 with the exception of 76 Ga. Purpose: The purpose of this experiment was to observe short-lived isomeric states in the vicinity of 78 Ni. Methods: In-beam fragmentation of a 86 Kr primary beam at the National Superconducting Cyclotron Laboratory produced radioactive ions which were delivered to and deposited in a Ce Br 3 scintillator coupled to a position-sensitive photomultiplier tube. Beta-delayed γ rays were measured by ancillary HPGe clover and LaBr 3 detectors which surrounded the implantation detector. Results: The previously observed J π = 1 + , 199-keV level in 76 Ga, populated following the β decay of 76 Zn, was identified as isomeric with a half-life of 34(1) stat. (8) sys. ns. Shell-model calculations suggest this state is formed by the coupling of protons in negative-parity configurations to 1/2 - neutron configurations. Transition strengths assuming a ground-state spin of J = 2 and J = 3 were determined from the experimental data.

59 ≤ A ≤ 89↗
DOE OSTI2016

Recent applications of nuclear track emulsion technique

A survey of recent results obtained using the nuclear track emulsion (NTE) technique in low energy applications is given. NTE irradiation with 60 MeV {sup 8}He nuclei provides identification of their decays at stopping, evaluation of the possibility of α range spectrometry, and observation of drift of thermalized {sup 8}He atoms. Correlations of α particles studied in {sup 12}C → 3α splitting induced by 14.1 MeV neutrons indicate the presence of a superposition of 0{sup +} and 2{sup +} states of the {sup 8}Be nucleus in the ground state of {sup 12}C. Angular correlations of fragments are studied in boron-enriched NTE, and the prospects of NTE application in radioactivity and nuclear fission research are discussed. It is proposed to use an automated microscope to search for collinear tripartition of heavy nuclei implanted in NTE. Surface irradiation of NTE by a {sup 252}Cf source is started. Planar events containing fragment pairs and long range α particles, as well as fragment triples, are studied. NTE samples are calibrated using Kr and Xe ions with an energy of 1.2 and 3 A MeV.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2016

Bubble Formation and Lattice Parameter Changes Resulting from He Irradiation of Defect-Fluorite Gd2Zr2O7

Pyrochlores have long been considered as potential candidates for advanced ceramic waste-forms for the immobilization of radioactive waste nuclides. This work provides evidence that Gd2Zr2O7, often considered the most radiation tolerant pyrochlore, could be susceptible to radiation damage in the form of bubble nucleation at the highest He doses expected over geological time. Ion irradiations were utilized to experimentally simulate the radiation damage and He accumulation produced by ..alpha..-decay. Samples were pre-damaged using 7 MeV Au3+ to induce the pyrochlore to defect-fluorite phase transformation, which would occur due to ..alpha..-recoil damage within several hundred years of storage in a Gd2Zr2O7 waste-form. These samples were then implanted to various He concentrations in order to study the long-term effects of He accumulation. Helium bubbles 1-3 nm in diameter were observed in TEM at a concentration of 4.6 at.% He. Some bubbles remained isolated, while others formed chains 10-30 nm in length parallel to the surface. GIXRD measurements showed lattice swelling after irradiating pristine Gd2Zr2O7 with 7 MeV Au3+ to a fluence of 2.2 x 1015 Au/cm2. An increase in lattice swelling was also measured after 2.2 x 1015 Au/cm2 + 2 x 1015 He/cm2 and 2.2 x 1015 Au/cm2 + 2 x 1016 He/cm2. A decrease in lattice swelling was measured after irradiation with 2.2 x 1015 Au/cm2 + 2 x 1017 He/cm2, the fluence where bubbles and bubble chains were observed in TEM. Bubble chains are thought to form in order to reduce lattice strain normal to the surface, which is produced by the Au and He irradiation damage.

36 MATERIALS SCIENCE↗
DOE OSTI2017

The production rate of cosmogenic deuterium at the Moon's surface

The hydrogen (D/H) isotope ratio is a key tracer for the source of planetary water. However, secondary processes such as solar wind implantation and cosmic ray induced spallation reactions have modified the primordial D/H signature of ‘water’ in all rocks and soils recovered on the Moon. We re-evaluate the production rate of cosmogenic deuterium (D) at the Moon's surface through ion microprobe analyses of hydrogen isotopes in olivines from eight Apollo 12 and 15 mare basalts. Furthermore, these in situ measurements are complemented by CO2 laser extraction-static mass spectrometry analyses of cosmogenic noble gas nuclides ( 3 He, 21 Ne, 38 Ar). Cosmic ray exposure (CRE) ages of the mare basalts, derived from their cosmogenic 21Ne content, range from 60 to 422 Ma. These CRE ages are 35% higher, on average, than the published values for the same samples. The amount of D detected in the olivines increases linearly with increasing CRE ages, consistent with a production rate of (2.17±0.11)×10 -12 mol(g rock) -1 Ma -1 . This value is more than twice as high as previous estimates for the production of D by galactic cosmic rays, indicating that for water-poor lunar samples, i.e., samples with water concentrations ≤50 ppm, corrected D/H ratios have been severely overestimated.

58 GEOSCIENCES↗
DOE OSTI2013

Manipulation of the graphene surface potential by ion irradiation

We show that the work function of exfoliated single layer graphene can be modified by irradiation with swift (E{sub kin}=92 MeV) heavy ions under glancing angles of incidence. Upon ion impact individual surface tracks are created in graphene on silicon carbide. Due to the very localized energy deposition characteristic for ions in this energy range, the surface area which is structurally altered is limited to Almost-Equal-To 0.01 {mu}m{sup 2} per track. Kelvin probe force microscopy reveals that those surface tracks consist of electronically modified material and that a few tracks suffice to shift the surface potential of the whole single layer flake by Almost-Equal-To 400 meV. Thus, the irradiation turns the initially n-doped graphene into p-doped graphene with a hole density of 8.5 Multiplication-Sign 10{sup 12} holes/cm{sup 2}. This doping effect persists even after heating the irradiated samples to 500 Degree-Sign C. Therefore, this charge transfer is not due to adsorbates but must instead be attributed to implanted atoms. The method presented here opens up a way to efficiently manipulate the charge carrier concentration of graphene.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2018

Investigation into the formation of the scrape-off layer density shoulder in JET ITER-like wall L-mode and H-mode plasmas

The low temperature boundary layer plasma (scrape-off layer or SOL) between the hot core and the surrounding vessel determines the level of power loading, erosion and implantation of material surfaces, and thus the viability of tokamak-based fusion as an energy source. Here, this study explores mechanisms affecting the formation of flattened density profiles, so-called 'density shoulders', in the low-field side (LFS) SOL, which modify ion and neutral fluxes to surfaces—and subsequent erosion. There is evidence against local enhancement of ionization inducing shoulder formation. We find that increases in SOL parallel resistivity, Λ div (=[ L || ν ei Ω i ]/ c s Ω e ), postulated to lead to shoulder growth through changes in SOL turbulence characteristics, correlates with increases in SOL shoulder amplitude, A s , but only under a subset of conditions (D 2 -fuelled L-mode density scans with outer strike point on the horizontal target). Λ div fails to correlate with A s for cases of N 2 seeding or during sweeping of the strike point across the horizontal target. The limited correlation of Λ div and A s is also found for H-mode discharges. Thus, while it may be necessary for Λ div to be above a threshold of ~1 for shoulder formation and/or growth, another mechanism is required. More significantly, we find that in contrast to parallel resistivity, outer divertor recycling, as quantified by the total outer divertor Balmer D α emission, I – D α , does scale with A s where Λ div does and even where Λ div does not. Divertor recycling could lead to SOL density shoulder formation through: (a) reducing the parallel to the field flow (loss) of ions out of the SOL to the divertor; and (b) changes in radial electric fields which lead to E × B poloidal flows as well as potentially affecting SOL turbulence birth characteristics. Therefore, changes in divertor recycling may be the sole process involved in bringing about SOL density shoulders or it may be that it acts in tandem with parallel resistivity.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2013

Steady State Sputtering Yield and Surface Compositions of Depleted Uranium and Uranium Carbide bombarded by 16 and 30 keV Gallium or 16 keV Cesium Ions.

Depleted uranium that included carbide precipitates was sputtered with 30keV gallium ions or 16kev cesium ions to depths much greater than the ions’ range, i.e. using steady state sputtering. The recession of both the uranium’s and uranium carbide’s surfaces and the corresponding ion fluences were used to determine the steady state target sputtering yields of both uranium and uranium carbide. 6.3 and 6.02 atoms of uranium versus 2.4 and 1.45 units of uranium carbide were sputtered per gallium ion at 30 kV and 16 kV, respectively. 9.9 uranium atoms and 3.65 units of uranium carbide sputtered per cesium ion at 16 kV. The measured steady state sputtering coefficients for Ga at 30 keV and Cs at 16 keV are close to, but smaller than calculated sputtering coefficients for pure uranium. The steady state surface composition resulting from the simultaneous gallium or cesium implantation and sputter-erosion of uranium and uranium carbide were calculated to be U86Ga14, (UC) 70 Ga 30 and U 86 Ga 14 , (UC) 59 Ga 41 for Ga at 30keV and 16keV, respectively, and U 81 Cs 9 , (UC) 78 Cs 22 for Cesium at 16 keV,

36 MATERIALS SCIENCE↗
DOE OSTI2023

Development of Solid Isotope Harvesting Methods in Preparation for FRIB (Closeout Report)

This project developed the techniques necessary to isolate hydrolysable radiometals from irradiated accelerator components. It was a collaborative project headed by Dr. Jennifer Shusterman at Hunter College in coordination with Dr. Nick Scielzo at Lawrence Livermore National Laboratory and Dr. Gregory Severin at Michigan State University. To develop the methods for harvesting hydrolysable radiometals, both non-radioactive and radioactive experiments were conducted. Non-radioactive tests involved dissolving common accelerator materials (tungsten, copper, aluminum, and gold), adding trace amounts of Zr 4+ and Y 3+ , and then separating the added ions out again using a variety of column-based approaches. These methods were then tested on surrogate materials that were created by irradiating tungsten, copper, aluminum and gold foils with a low-purity 88 Zr beam at the National Superconducting Cyclotron Laboratory. The implanted 88 Zr (and co-implanted and daughter-product 88 Y) were recovered, validating the developed methods. MSU’s role in the project was to develop the chemistry for recovering Zr and Y from tungsten; build the target station for irradiating the foils; conduct the irradiations with the collaborators; to validate the tungsten methodology using the irradiated foils; and to disseminate the results.

07 ISOTOPE AND RADIATION SOURCES↗
DOE OSTI2016

Dye-Sensitized Core/Active Shell Upconversion Nanoparticles for Optogenetics and Bioimaging Applications

Near Infrared (NIR) dye-sensitized upconversion nanoparticles (UCNPs) have recently been proposed in order to broaden the absorption range and to boost upconversion efficiency. However, implementing this strategy has been limited only to bare core UCNP structures that are faintly luminescent. Herein, we report on an approach to achieve significantly enhanced upconversion luminescence in dye-sensitized core-active shell UCNPs with a broadened absorption range via the doping of ytterbium ions in the UCNP shell in order to bridge the energy transfer from the dye to the UCNP core. As a result, we have been able to synergize the two most practical upconversion booster effectors (dye-sensitizing and core/shell enhancement). The absolute quantum yield of our dye-sensitized core/active shell UCNPs at 800 nm was determined to be ~6% at 2 W/cm2, about 33 times larger than the highest value reported to date for existing 800 nm excitable UCNPs. Moreover, for the first time, by using dye-sensitized core/active shell UCNP embedded poly(methyl methacrylate) polymer implantable systems, we successfully shifted the optogenetic neuron excitation window to a wavelength that is compatible with deep tissue penetrable near the infrared wavelength at 800 nm. Finally, amphiphilic triblock copolymer, Pluronic F127 coatings permit the transfer of hydrophobic UCNPs into water, resulting in water-soluble nanoparticles with well-preserved optical property in aqueous solution. We believe that this research offers a new solution to enhance upconversion efficiency for photonic and biophotonic purposes and opens up new opportunities to use UCNPs as a NIR relay for optogenetic applications.

Wu, Xiang↗
NASA NTRS1985

Role of GaAs surface clearing in plasma deposition of silicon nitride films for encapsulated annealing

The role of GaAs surface cleaning and plasma reactor cleaning prior to deposition of silicon nitride films for encapsulated annealing has been investigated. X-ray photoelectron spectroscopy was employed to determine the surface characteristics of GaAs treated with HCl, HF, and NH4OH solutions preceded by a degreasing procedure. The HCl clean left the least amount of oxygen on the surface. Fluorine contamination resulting from the CF4 plasma used to clean the reactor was found to be located at the film-substrate interface by Auger electron spectroscopy with argon-ion sputtering. A modified deposition procedure was developed to eliminate the fluorine contamination. Plasma deposition of silicon nitride encapsulating films was found to modify the I-V characteristics of Schottky diodes subsequently formed on GaAs surface. The reverse current of the diodes was slightly reduced. Substrates implanted with Si at 100 keV and a dose of 5 x 10 to the 12th/sq cm showed a peak electron concentration of 1.7 x 10 to the 17th/cu cm at a depth of 0.1-micron with 60 percent activation after encapsulation and annealing at 800 C for 7 min.

Valco, G. J.↗
DOE OSTI2021

Helium causing disappearance of a/2<111> dislocation loops in binary Fe-Cr ferritic alloys

In this work, single and dual-beam self-ion irradiations were performed at 500°C on ultra-high purity Fe14%Cr alloy to ~0.33 displacements-per-atom (dpa), and 0 or 3030 atomic-parts-per-million (appm) helium/dpa, respectively. Using transmission electron microscopy, we reveal that helium can drastically modify the dislocation loop Burgers vector in Fe-Cr alloys. Helium co-implantation caused complete disappearance of a/2<111> type dislocation loops, and the microstructure consisted of only a<100> loops. Conversely, a/2<111> type loops were predominant without He co-implantation. The total loop density remained largely unaffected. The results strikingly contrast literature asserting that helium stabilizes a/2<111> type loops in bcc Fe alloys, based on low temperature irradiations. Collectively analyzing the results with literature suggest that the small positive interaction between helium and self-interstitial atoms (SIA) in Fe predicted by atomistic simulations maybe insufficient to holistically explain the dislocation loop microstructure development in presence of helium. Helium-SIA positive binding inadvertently implies elevated a/2<111> loop fraction and higher loop densities that the present results contradict. Helium induced high cavity density causing a preferential loss of highly glissile <111> clusters, leaving the matrix saturated with <100> type clusters is proposed as a potential mechanism. Further, the in-situ irradiations combined with Burgers vector analysis strengthened the evidence of Cr-induced dislocation loop mobility reduction that appears to stabilize the a/2<111> type loops and causes higher loop densities in Fe-Cr alloys.

36 MATERIALS SCIENCE↗
DOE OSTI2025

YSO implantation detector for beta-delayed neutron spectroscopy

A segmented-scintillator-based implantation detector was developed to study the energy distribution of β-delayed neutrons emitted from exotic isotopes. The detector comprises a 34 × 34 YSO scintillator coupled to an 8 × 8 anode Position-Sensitive Photo-Multiplier Tube (PSPMT) via a tapered light guide. The detector was used at RIBF, RIKEN for time-of-flight-based neutron spectroscopy measurement in the 78Ni region. The detector provides the position and timing resolution necessary for ion-beta correlations and time of flight measurements. The detector provides a high ~80% beta-detection efficiency and a sub-nanosecond timing resolution. This contribution discusses the details of the design, operation, implementation, and analysis developed to obtain neutron time-of-flight spectrum and the analysis methods in the context of neutron-rich nuclei in the 78Ni region.

Implantation detector↗
DOE OSTI2011

Modeling pulsed-laser melting of embedded semiconductor nanoparticles

Pulsed-laser melting (PLM) is commonly used to achieve a fast quench rate in both thin films and nanoparticles. A model for the size evolution during PLM of nanoparticles confined in a transparent matrix, such as those created by ion-beam synthesis, is presented. A self-consistent mean-field rate equations approach that has been used successfully to model ion beam synthesis of germanium nanoparticles in silica is extended to include the PLM process. The PLM model includes classical optical absorption, multiscale heat transport by both analytical and finite difference methods, and melting kinetics for confined nanoparticles. The treatment of nucleation and coarsening behavior developed for the ion beam synthesis model is modified to allow for a non-uniform temperature gradient and for interacting liquid and solid particles with different properties. The model allows prediction of the particle size distribution after PLM under various laser fluences, starting from any particle size distribution including as-implanted or annealed simulated samples. A route for narrowing the size distribution of embedded nanoparticles is suggested, with simulated distribution widths as low as 15% of the average size.

36 MATERIALS SCIENCE↗
NASA NTRS2012

Fabrication of a Cryogenic Terahertz Emitter for Bolometer Focal Plane Calibrations

A fabrication process is reported for prototype emitters of THz radiation, which operate cryogenically, and should provide a fast, stable blackbody source suitable for characterization of THz devices. The fabrication has been demonstrated and, at the time of this reporting, testing was underway. The emitter is similar to a monolithic silicon bolometer in design, using both a low-noise thermometer and a heater element on a thermally isolated stage. An impedance-matched, high-emissivity coat ing is also integrated to tune the blackbody properties. This emitter is designed to emit a precise amount of power as a blackbody spectrum centered on terahertz frequencies. The emission is a function of the blackbody temperature. An integrated resistive heater and thermometer system can control the temperature of the blackbody with greater precision than previous incarnations of calibration sources that relied on blackbody emission. The emitter is fabricated using a silicon- on-insulator substrate wafer. The buried oxide is chosen to be less than 1 micron thick, and the silicon device thickness is 1-2 microns. Layers of phosphorus compensated with boron are implanted into and diffused throughout the full thickness of the silicon device layer to create the thermometer and heater components. Degenerately doped wiring is implanted to connect the devices to wire-bondable contact pads at the edge of the emitter chip. Then the device is micromachined to remove the thick-handle silicon behind the thermometer and heater components, and to thermally isolate it on a silicon membrane. An impedance- matched emissive coating (ion assisted evaporated Bi) is applied to the back of the membrane to enable high-efficiency emission of the blackbody spectrum.

Chervenak, James↗