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At least 1,693 records · Page 94

Generation of Subsurface Voids, Incubation Effect, and Formation of Nanoparticles in Short Pulse Laser Interactions with Bulk Metal Targets in Liquid: Molecular Dynamics Study

The ability of short pulse laser ablation in liquids to produce clean colloidal nanoparticles and unusual surface morphology has been employed in a broad range of practical applications. In this paper, we report the results of large-scale molecular dynamics simulations aimed at revealing the key processes that control the surface morphology and nanoparticle size distributions by pulsed laser ablation in liquids. The simulations of bulk Ag targets irradiated in water are performed with an advanced computational model combining a coarse-grained representation of liquid environment and an atomistic description of laser interaction with metal targets. For the irradiation conditions that correspond to the spallation regime in vacuum, the simulations predict that the water environment can prevent the complete separation of the spalled layer from the target, leading to the formation of large subsurface voids stabilized by rapid cooling and solidification. The subsequent irradiation of the laser-modified surface is found to result in a more efficient ablation and nanoparticle generation, thus suggesting the possibility of the incubation effect in multipulse laser ablation in liquids. The simulations performed at higher laser fluences that correspond to the phase explosion regime in vacuum reveal the accumulation of the ablation plume at the interface with the water environment and the formation of a hot metal layer. The water in contact with the metal layer is brought to the supercritical state and provides an environment suitable for nucleation and growth of small metal nanoparticles from metal atoms emitted from the hot metal layer. The metal layer itself has limited stability and can readily disintegrate into large (tens of nanometers) nanoparticles. The layer disintegration is facilitated by the Rayleigh–Taylor instability of the interface between the higher density metal layer decelerated by the pressure from the lighter supercritical water. The nanoparticles emerging from the layer disintegration are rapidly cooled and solidified due to the interaction with water environment, with a cooling rate of ~2 × 10 12 K/s observed in the simulations. The computational prediction of two distinct mechanisms of nanoparticle formation yielding nanoparticles with different characteristic sizes provides a plausible explanation for the experimental observations of bimodal nanoparticle size distributions in laser ablation in liquids. The ultrahigh cooling and solidification rates suggest the possibility for generation of nanoparticles featuring metastable phases and highly nonequilibrium structures.

Chemistry↗

Phase Segmentation in Atom-Probe Tomography Using Deep Learning-Based Edge Detection

Abstract Atom-probe tomography (APT) facilitates nano- and atomic-scale characterization and analysis of microstructural features. Specifically, APT is well suited to study the interfacial properties of granular or heterophase systems. Traditionally, the identification of the interface between, for precipitate and matrix phases, in APT data has been obtained either by extracting iso-concentration surfaces based on a user-supplied concentration value or by manually perturbing the concentration value until the iso-concentration surface qualitatively matches the interface. These approaches are subjective, not scalable, and may lead to inconsistencies due to local composition inhomogeneities. We introduce a digital image segmentation approach based on deep neural networks that transfer learned knowledge from natural images to automatically segment the data obtained from APT into different phases. This approach not only provides an efficient way to segment the data and extract interfacial properties but does so without the need for expensive interface labeling for training the segmentation model. We consider here a system with a precipitate phase in a matrix and with three different interface modalities—layered, isolated, and interconnected—that are obtained for different relative geometries of the precipitate phase. We demonstrate the accuracy of our segmentation approach through qualitative visualization of the interfaces, as well as through quantitative comparisons with proximity histograms obtained by using more traditional approaches.

47 OTHER INSTRUMENTATION↗

From Surfaces to Interfaces: Ambient Pressure XPS and Beyond

In this work, the rapidly increasing field of surfaces under ambient conditions of temperature, and pressure in gas and liquid environments, reflects the importance of understanding surface properties in conditions closer to practical situations. This has been enabled by the emergence in the last two decades of a number of new techniques, both spectroscopy and microscopy, that can deliver atomic scale information with the required surface/interface sensitivity. Here we present a short review of recent advances to illustrate the novel understanding derived from the use of new techniques focusing on the gas–solid interface, where two barriers have been bridged: the pressure gap, and the temperature gap. The later gap is very important when dealing with weakly bound molecules, where only by the presence of gas at a suitable pressure can a measurable coverage of adsorbed molecules be achieved. The temperature gap manifests also in the removal of kinetic barriers. Future developments to continue extending the range of pressures are also mentioned. Finally, new challenges that appear, both from X-ray and electron-induced damage to the sample, and from contamination under high pressure of desired gases, while maintaining very low pressures of undesirable ones.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Study on the Ge{sub 1−x}Sn{sub x}/HfO{sub 2} interface and its impacts on Ge{sub 1−x}Sn{sub x} tunneling transistor

In this paper, we employ first-principle calculation to investigate the Ge{sub 1−x}Sn{sub x}/HfO{sub 2} interface, and then evaluate its impacts on Ge{sub 1−x}Sn{sub x} tunneling field-effect transistor (TFET). First-principle calculations of Ge{sub 1−x}Sn{sub x}/HfO{sub 2} interfaces in the oxygen-rich process atmosphere indicate that the interface states originate from the Ge and Sn dangling bond, rather than Hf-bond. The total density of state shows that there are more interface states in the semiconductor bandgap with increasing Sn fraction. By further incorporating the material and interface parameters from density functional theory calculation into advanced device simulation, the electrical characteristics of Ge{sub 1−x}Sn{sub x} TFET are investigated. Removing the Sn atom from the first atom layer of Ge{sub 1−x}Sn{sub x} in device processes is found to be beneficial to reduce the degradations. For the degradation mechanisms, the trap-assisted-tunneling is the dominant mechanism at the low Sn fraction, and enhanced Shockley-Read-Hall recombination induced by traps becomes the dominant mechanism with increasing Sn fraction. The results are helpful for the interface optimization of Ge{sub 1−x}Sn{sub x} TFET.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Effects of Nb and Ta additions on the strength and coarsening resistance of precipitation-strengthened Al-Zr-Sc-Er-Si alloys

Highlights: • Nb and Ta micro-additions are made to a dilute Al-Er-Sc-Zr-Si alloys. • Zr-enriched primary L1{sub 2} precipitates form on solidification. • Secondary L1{sub 2} precipitates form on aging, and show improved coarsening resistance. • Nb and Ta are enriched at the secondary nanoprecipitate/matrix interface. • Micro-additions of Nb and Ta have similar effects as V, previously studied. - Abstract: A dilute Al-0.07Zr-0.02Sc-0.005Er-0.06Si (at.%) alloy was microalloyed with 0.08 at.% Nb or Ta. Atom-probe tomography reveals that, upon aging, Nb and Ta partition to the coherent L1{sub 2}-Al{sub 3}(Zr,Sc,Er) nanoprecipitates (with average concentrations of 0.2 and 0.08 at.%, respectively), with both segregating at the matrix/nanoprecipitate heterophase interface. This is consistent with the Nb- and Ta-modified alloys exhibiting, as compared to the unmodified alloy: (i) higher peak microhardness, from a higher nanoprecipitate volume fraction and/or lattice parameter mismatch; and (ii) improved aging resistance, from slower nanoprecipitate coarsening due to the small diffusivities of niobium and tantalum in aluminum. Analogous results were previously reported for a V-modified alloy.

36 MATERIALS SCIENCE↗

Effect of Annealing on Perpendicular Magnetic Anisotropy and Low Saturation Magnetization of MgO/Co{sub 2}FeAl/Mo Trilayer Films

In this study, we report our approach to manipulate the strength of perpendicular magnetic anisotropy (PMA) at oxide/ferromagnetic metal of Heusler alloy (HA) interface by tuning the parameter of annealing temperature. Robust PMA energy density (K{sub eff}) of ∼ 0.43 × 10{sup 6} erg/cm{sup 3} and small saturation magnetization (M{sub s}) as low as ∼ 248 emu/cm{sup 3} have been achieved for MgO/Co{sub 2}FeAl (CFA)/Mo stacks at 400 {sup ∘}C. We identify that PMA energy is thermally stable up to the maximum temperature of 400 {sup ∘}C. Effect of annealing temperature on surface morphology, grain distribution, and surface roughness of the stacks are investigated by atomic force microscopy (AFM). Further, X-ray photoelectron spectroscopy (XPS) study demonstrates that the interfacial oxidation decides the strong PMA property at MgO/Co{sub 2}FeAl interface during the annealing process. This MgO/CFA/Mo trilayer system can be a suitable candidate for the development of low-power consumption, huge-density data storage, high-thermal stability against the annealing temperature, and nonvolatile magnetic memories.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Quantifying and connecting atomic and crystallographic grain boundary structure using local environment representation and dimensionality reduction techniques

In this paper, the relationship between grain boundary crystallography and grain boundary atomic structure is examined, using [100] - symmetric tilt grain boundaries in nickel. The structural unit model is used as a benchmark to evaluate the atomic structure description capacities of an emerging structural descriptor, the local environment representation, which itself is a refinement of the Smooth Overlap of Atomic Positions (SOAP) descriptor. We show that the local environment representation encodes both the information of the structural unit model and additional information, such as distortion in the structural units and the arrangement of the structural units at the interface. The use of the local environment representation permits the use of a visualization tool known as SPRING to represent structural similarities between grain boundaries. With the SPRING representation, we produce objective evidence of a relationship between crystallography and atomic structure, at least for [100] - symmetric tilt grain boundaries.

36 MATERIALS SCIENCE↗

Modeling of radiation-induced charge trapping in MOS devices under ionizing irradiation

The numerical model of the radiation-induced charge trapping process in the oxide layer of a MOS device under ionizing irradiation is developed; the model includes carrier transport, hole capture by traps in different states, recombination of free electrons and trapped holes, kinetics of hydrogen ions which can be accumulated in the material during transistor manufacture, and accumulation and charging of interface states. Modeling of n-channel MOSFET behavior under 1 MeV photon irradiation is performed. The obtained dose dependences of the threshold voltage shift and its contributions from trapped holes and interface states are in good agreement with experimental data.

74 ATOMIC AND MOLECULAR PHYSICS↗

Symmetry-mode analysis for local structure investigations using pair distribution function data

Symmetry-adapted distortion modes provide a natural way of describing distorted structures derived from higher-symmetry parent phases. Structural refinements using symmetry-mode amplitudes as fit variables have been used for at least ten years in Rietveld refinements of the average crystal structure from diffraction data; more recently, this approach has also been used for investigations of the local structure using real-space pair distribution function (PDF) data. Here, the value of performing symmetry-mode fits to PDF data is further demonstrated through the successful application of this method to two topical materials: TiSe2, where a subtle but long-range structural distortion driven by the formation of a charge-density wave is detected, and MnTe, where a large but highly localized structural distortion is characterized in terms of symmetry-lowering displacements of the Te atoms. Here, the analysis is performed using fully open-source code within the DiffPy framework via two packages developed for this work: isopydistort, which provides a scriptable interface to the ISODISTORT web application for group theoretical calculations, and isopytools, which converts the ISODISTORT output into a DiffPy-compatible format for subsequent fitting and analysis. These developments expand the potential impact of symmetry-adapted PDF analysis by enabling high-throughput analysis and removing the need for any commercial software.

36 MATERIALS SCIENCE↗

Unusual electrical conductivity driven by localized stoichiometry modification at vertical epitaxial interfaces

Precise control of lattice mismatch accommodation and interfacial cation diffusion is critical to modulate correlated functionalities in epitaxial heterostructures, particularly when the interface composition is positioned near a compositional phase transition boundary. Here we select La 1-x Sr x MnO 3 (LSMO) as a prototype phase transition oxide and establish vertical epitaxial interfaces with NiO for exploring the strong interplay between strain accommodation, stoichiometry modification, and localized electron transport across the interface. It is found that localized stoichiometry modification overcomes the dead layer problem plaguing LSMO and leads to strongly directional conductivity, as manifested by a more than three orders of magnitude difference between out-of-plane and in-plane conductivity. Comprehensive atomic scale structural characterization and transport measurements reveal that this emerging behavior is created by a compositional change produced by preferential cation diffusion that pushes the LSMO phase transition from insulating into metallic within an ultrathin interface region. This study explores the nature of unusual electrical conductivity at vertical epitaxial interfaces and highlights the beneficial role of controllable cation diffusion that enables emerging functionalities for a broad range of potential applications such as memristors, spintronic devices, and novel nanoelectronic devices using strongly correlated materials.

36 MATERIALS SCIENCE↗

Interfacial bonding and electronic structure of GaN/GaAs interface: A first-principles study

Understanding of GaN interfacing with GaAs is crucial for GaN to be an effective interfacial layer between high-k oxides and III-V materials with the application in high-mobility metal-oxide-semiconductor field effect transistor (MOSFET) devices. Utilizing first principles calculations, here, we investigate the structural and electronic properties of the GaN/GaAs interface with respect to the interfacial nitrogen contents. The decrease of interfacial N contents leads to more Ga dangling bonds and As-As dimers. At the N-rich limit, the interface with N concentration of 87.5% shows the most stability. Furthermore, a strong band offsets dependence on the interfacial N concentration is also observed. The valance band offset of N7 with hybrid functional calculation is 0.51 eV. The electronic structure analysis shows that significant interface states exist in all the GaN/GaAs models with various N contents, which originate from the interfacial dangling bonds and some unsaturated Ga and N atoms. These large amounts of gap states result in Fermi level pinning and essentially degrade the device performance.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Interfacial chemistry and valence band offset between GaN and Al{sub 2}O{sub 3} studied by X-ray photoelectron spectroscopy

The interface region between Ga-face n-type GaN and Al{sub 2}O{sub 3} dielectric (achieved via atomic-layer deposition or ALD) is investigated by X-ray photoelectron spectroscopy (XPS). An increase in the Ga-O to Ga-N bond intensity ratio following Al{sub 2}O{sub 3} deposition implies that the growth of an interfacial gallium sub-oxide (GaO{sub x}) layer occurred during the ALD process. This finding may be ascribed to GaN oxidation, which may still happen following the reduction of a thin native GaO{sub x} by trimethylaluminum (TMA) in the initial TMA-only cycles. The valence band offset between GaN and Al{sub 2}O{sub 3}, obtained using both core-level and valence band spectra, is found to vary with the thickness of the deposited Al{sub 2}O{sub 3}. This observation may be explained by an upward energy band bending at the GaN surface (due to the spontaneous polarization induced negative bound charge on the Ga-face GaN) and the intrinsic limitation of the XPS method for band offset determination.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Detailed Structural and Chemical Analysis of Amorphous Compounds in Superconducting Qubit Systems

With massive improvements in device coherence times and gate fidelity over the past two decades, superconducting quantum devices have emerged as a leading technology platform for next generation quantum computing. While many of these improvements have been driven through optimized device designs and geometries, the presence of defects, impurities, interfaces, and surfaces in the constituent materials continue to limit performance and present a critical barrier in achieving scalable quantum systems with long coherence times. As part of the Superconducting Quantum Materials and Systems (SQMS) center, we have applied state-of-the-art materials characterization techniques, such as scanning/transmission electron microscopy, secondary ion mass spectrometry, and atom probe tomography, to identify structural defects and chemical inhomogeneities in superconducting qubits. In this review, we discuss the findings of these efforts as they relate to the inherent surfaces, interfaces, impurities, and defects in superconducting qubits. Through this comprehensive investigation, we provide insight into possible sources of dissipation in these systems. Further, we supplement these findings with potential strategies for mitigating these undesired features in an effort to systematically and intelligently improve the coherence times of superconducting qubits.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗

Adhesion of Silicone Elastomer Seals for NASA's Crew Exploration Vehicle

Silicone rubber seals are being considered for a number of interfaces on NASA's Crew Exploration Vehicle (CEV). Some of these joints include the docking system, hatches, and heat shield-to-back shell interface. A large diameter molded silicone seal is being developed for the Low Impact Docking System (LIDS) that forms an effective seal between the CEV and International Space Station (ISS) and other future Constellation Program spacecraft. Seals between the heat shield and back shell prevent high temperature reentry gases from leaking into the interface. Silicone rubber seals being considered for these locations have inherent adhesive tendencies that would result in excessive forces required to separate the joints if left unchecked. This paper summarizes adhesion assessments for both as-received and adhesion-mitigated seals for the docking system and the heat shield interface location. Three silicone elastomers were examined: Parker Hannifin S0899-50 and S0383-70 compounds, and Esterline ELA-SA-401 compound. For the docking system application various levels of exposure to atomic oxygen (AO) were evaluated. Moderate AO treatments did not lower the adhesive properties of S0899-50 sufficiently. However, AO pretreatments of approximately 10(exp 20) atoms/sq cm did lower the adhesion of S0383-70 and ELA-SA-401 to acceptable levels. For the heat shield-to-back shell interface application, a fabric covering was also considered. Molding Nomex fabric into the heat shield pressure seal appreciably reduced seal adhesion for the heat shield-to-back shell interface application.

deGroh, Henry C., III↗

Extended defects in GaAs/GaAs 1-x Sb x /GaAs (001) heterostructures

The atomic-scale structure of extended defects in GaAs/GaAs 1-x Sb x /GaAs (001) heterostructures has been characterized using aberration-corrected scanning transmission electron microscopy. The defect located at the tensile-strained GaAs(cap)/GaAs 0.34 Sb 0.66 interface had no edge component in the projection plane and is identified as either a dissociated screw dislocation or a partial dislocation dipole. The associated intrinsic stacking fault is bounded by two 30° Shockley partial dislocations of opposite sign. Another defect, located at the compressively-strained GaAs 0.91 Sb 0.09 /GaAs(substrate) interface, is identified as a dissociated 90° dislocation. The associated intrinsic stacking fault is bounded by a 30° Shockley partial dislocation and a partial dislocation with a Burgers vector of either or , where a is the lattice constant. Unpaired atomic columns observed at the cores of the 30° Shockley partial dislocations indicate that both defects belong primarily to the glide set.

36 MATERIALS SCIENCE↗

Structural Characterization of Aluminum (Oxy)hydroxide Films at the Muscovite (001)–Water Interface

The formation of Al (oxy)hydroxide on the basal surface of muscovite mica was investigated to understand how the structure of the substrate controls the nucleation and growth of secondary phases. Atomic force microscopy images showed that solid phases nucleated on the surface initially as two-dimensional islands that were <= 10 angstrom in height and <= 200 angstrom in diameter after 16-50 h of reaction in a 100 mu M AlCl3 solution at pH 4.2 at room temperature. High-resolution X-ray reflectivity data indicated that these islands were gibbsite layers whose basic unit is composed of a plane of Al ions octahedrally coordinated to oxygen or hydroxyl groups. The formation of gibbsite layers is likely favored because of the structural similarity between its basal plane and the underlying mica surface. After 700-2000 h of reaction, a thicker and continuous film had formed on top of the initial gibbsite layers. X-ray diffraction data showed that this film was composed of diaspore that grew predominantly with its [040] and [140] crystallographic directions oriented along the muscovite [001] direction. These results show the structural characteristics of the muscovite (001) and Al (oxy)hydroxide film interface where presumed epitaxy had facilitated nucleation of metastable gibbsite layers which acted as a structural anchor for the subsequent growth of thermodynamically stable diaspore grown from a mildly acidic and Al-rich solution.

diaspore↗

Revealing and Elucidating ALD-Derived Control of Lithium Plating Microstructure

The practical implementation of Li metal batteries is hindered by difficulties in controlling the Li metal plating microstructure. While previous atomic layer deposition (ALD) studies have focused on directly coating Li metal with thin films for the passivation of the electrode–electrolyte interface, a different approach is adopted, situating the ALD film beneath Li metal and directly on the copper current collector. Here, a mechanistic explanation for this simple strategy of controlling the Li metal plating microstructure using TiO 2 grown on copper foil by ALD is presented. In contrast to previous studies where ALD-grown layers act as artificial interphases, this TiO 2 layer resides at the copper–Li metal interface, acting as a nucleation layer to improve the Li metal plating morphology. Upon lithiation of TiO 2 , a Li x TiO 2 complex forms; this alloy provides a lithiophilic surface layer that enables uniform and reversible Li plating. The reversibility of lithium deposition is evident from the champion cell (5 nm TiO 2 ), which displays an average Coulombic efficiency (CE) of 96% after 150 cycles at a moderate current density of 1 mA cm –2 . This simple approach provides the first account of the mechanism of ALD-derived Li nucleation control and suggests new possibilities for future ALD-synthesized nucleation layers.

25 ENERGY STORAGE↗

Hydrogen-bond Specific Materials Modification in Group IV Semiconductors

Semiconductor dielectric crystals consist of two fundamental components: lattice atoms and electrons. The former component provides a crystalline structure that can be disrupted by various defects or the presence of an interface, or by transient oscillations known as phonons. The latter component produces an energetic structure that is responsible for the optical and electronic properties of the material, and can be perturbed by lattice defects or by photo-excitation. Over the period of this project, August 15, 1999 to March 31, 2015, a persistent theme has been the elucidation of the fundamental role of defects arising from the presence of radiation damage, impurities (in particular, hydrogen), localized strain or some combination of all three. As our research effort developed and evolved, we have experienced a few title changes, which reflected this evolution. Throughout the project, ultrafast lasers usually in a pump-probe configuration provided the ideal means to perturb and study semiconductor crystals by both forms of excitation, vibrational (phonon) and electronic (photon). Moreover, we have found in the course of this research that there are many interesting and relevant scientific questions that may be explored when phonon and photon excitations are controlled separately. Our early goals were to explore the dynamics of bond-selective vibrational excitation of hydrogen from point defects and impurities in crystalline and amorphous solids, initiating an investigation into the behavior of hydrogen isotopes utilizing a variety of ultrafast characterization techniques, principally transient bleaching spectroscopy to experimentally obtain vibrational lifetimes. The initiative could be divided into three related areas: (a) investigation of the change in electronic structure of solids due to the presence of hydrogen defect centers, (b) dynamical studies of hydrogen in materials and (c) characterization and stability of metastable hydrogen impurity states under transient compression. This research focused on the characterization of photon and ion stimulated hydrogen related defect and impurity reactions and migration in solid state matter, which requires a detailed understanding of the rates and pathways of vibrational energy flow, of the transfer channels and of the coupling mechanisms between local vibrational modes (LVMs) and phonon bath as well as the electronic system of the host material. It should be stressed that researchers at Vanderbilt and William and Mary represented a unique group with a research focus and capabilities for low temperature creation and investigation of such material systems. Later in the program, we carried out a vigorous research effort addressing the roles of defects, interfaces, and dopants on the optical and electronic characteristics of semiconductor crystals, using phonon generation by means of ultrafast coherent acoustic phonon (CAP) spectroscopy, nonlinear characterization using second harmonic generation (SHG), and ultrafast pump-and-probe reflectivity and absorption measurements. This program featured research efforts from hydrogen defects in silicon alone to other forms of defects such as interfaces and dopant layers, as well as other important semiconducting systems. Even so, the emphasis remains on phenomena and processes far from equilibrium, such as hot electron effects and travelling localized phonon waves. This program relates directly to the mission of the Department of Energy. Knowledge of the rates and pathways of vibrational energy flow in condensed matter is critical for understanding dynamical processes in solids including electronically, optically and thermally stimulated defect and impurity reactions and migration. The ability to directly probe these pathways and rates allows tests of theory and scaling laws at new levels of precision. Hydrogen embedded in model crystalline semiconductors and metal oxides is of particular interest, since the associated local mode can be excited cleanly, and is usually well-separated in energy from the phonon bath. These basic dynamical studies have provided new insights for example into the fundamental mechanisms that control proton diffusion in these oxides. This area of materials science has largely fulfilled its promise to identify degradation mechanisms in electronic and optoelectronic devices, and to advance solid oxide proton conductors for fuel cells, gas sensors and proton-exchange membrane applications. It also provides the basis for innovations in materials synthesis involving atomic-selective diffusion and desorption.

36 MATERIALS SCIENCE↗