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At least 1,675 records · Page 93
All sourcesNASA NTRSDOE OSTI
DOE OSTI2014

Influence of Au nanoparticles on the photoluminescent and electrical properties of Bi{sub 3.6}Eu{sub 0.4}Ti{sub 3}O{sub 12} ferroelectric thin films

Au-doped Bi{sub 3.6}Eu{sub 0.4}Ti{sub 3}O{sub 12} (BET) thin films were prepared on fused silica and Pt/Ti/SiO{sub 2}/Si substrates by a chemical solution deposition method. The existence of Au nanoparticles (NPs) has been confirmed by X-ray diffraction, X-ray photoelectron spectroscopy, and transmission electron microscope analysis. Enhanced photoluminescence (PL) of Eu{sup 3+} ions was obtained in a wide range of Au doping level. Role of the Au NPs in the PL enhancement was investigated by means of optical absorption, excitation, and emission spectra, as well as decay lifetime measurements. The results indicated that the intra-4f transition of Eu{sup 3+} ions can be intensively activated by the coupling of the charge transfer band of BET with the {sup 5}D{sub 0} state of Eu{sup 3+} ions. The influence of Au NPs on the PL properties of Eu{sup 3+} ions in the present thin films was attributed to the band bending at Au/BET interface and the localized surface plasma resonance absorption of Au NPs in the visible light region. The dielectric and ferroelectric properties of Au-doped BET thin films were investigated as well.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2021

Structure-property relationships and mobility optimization in sputtered La-doped BaSn O 3 films: Toward 100cm 2 V -1 s -1

he wide band gap semiconducting perovskite BaSnO 3 is of high current interest due to outstanding room temperature mobility at high electron density, fueled by potential applications in oxide, transparent, and power electronics. Due in part to a lack of lattice-matched substrates, BaSnO 3 thin films suffer from high defect densities, however, limiting electron mobility. Additionally, the vast majority of BaSnO 3 thin film research has focused on pulsed laser deposition or molecular beam epitaxy. In this work, we present an exhaustive optimization of the mobility of Ba 0.98 La 0.02 SnO 3 films grown by a scalable, high-throughput method: high-pressure-oxygen sputter deposition. Considering target synthesis conditions, substrate selection, buffer layer structure, deposition temperature, deposition rate, thickness, and postdeposition annealing conditions, and by combining high-resolution x-ray diffraction, reciprocal space mapping, rocking curve analysis, scanning transmission electron microscopy, atomic force microscopy, and temperature-dependent electronic transport measurements, detailed understanding of synthesis-structure-property relationships is attained. Optimized room temperature mobility of 96 cm 2 V –1 s –1 is achieved in vacuum-annealed GdScO 3 (110)/BaSnO 3 (120 nm)/Ba 0.98 La 0.02 SnO 3 (200 nm) heterostructures, as well as 92 cm 2 V –1 s –1 on unbuffered substrates and 87 2 V –1 s –1 without postdeposition annealing. These results, including important trends in defect densities and a surprising dependence of mobility on lattice mismatch, substantially expand the understanding of the interplay between deposition conditions, microstructure, and transport in doped BaSnO 3 films, establishing competitive mobilities in films fabricated via a scalable, high-throughput, industry-standard technique.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Ferroelectricity in Atomic Layer Deposited Wurtzite Zinc Magnesium Oxide Zn 1– x Mg x O

Conformal deposition of wurtzite ferroelectrics, which is needed for their use in scaled nonvolatile memories, is challenging using current physical vapor deposition techniques. To overcome the conformality barrier, this work demonstrates ferroelectricity in wurtzite Zn 1− x Mg x O thin films prepared by plasma-enhanced atomic layer deposition, which is a non-line-of-sight deposition method. Films ranging in composition from x = 0.00 to x = 0.58 are predominantly wurtzite phase and exhibit a (0001)-texture. Increasing the magnesium content decreases the c/a ratio, increases the optical bandgap energy, increases the piezoelectric response, and enables polarization reversal. Clear polarization switching is demonstrated in 50 nm thick Zn 1− x Mg x O films by piezoresponse force microscopy in compositions containing x = 0.46 and x = 0.58.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2022

Structural and Optical Properties of High Entropy (La,Lu,Y,Gd,Ce)AlO 3 Perovskite Thin Films

Mixtures of Ce-doped rare-earth aluminum perovskites are drawing a significant amount of attention as potential scintillating devices. However, the synthesis of complex perovskite systems leads to many challenges. Designing the A-site cations with an equiatomic ratio allows for the stabilization of a single-crystal phase driven by an entropic regime. This work describes the synthesis of a highly epitaxial thin film of configurationally disordered rare-earth aluminum perovskite oxide (La 0.2 Lu 0.2 Y 0.2 Gd 0.2 Ce 0.2 )AlO 3 and characterizes the structural and optical properties. The thin films exhibit three equivalent epitaxial domains having an orthorhombic structure resulting from monoclinic distortion of the perovskite cubic cell. An excitation of 286.5 nm from Gd 3+ and energy transfer to Ce 3+ with 405 nm emission are observed, which represents the potential for high-energy conversion. These experimental results also offer the pathway to tunable optical properties of high-entropy rare-earth epitaxial perovskite films for a range of applications.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Manipulating high-temperature superconductivity by oxygen doping in Bi2Sr2CaCu2O8+δ thin flakes

Abstract Harnessing the fascinating properties of correlated oxides requires precise control of their carrier density. Compared to other methods, oxygen doping provides an effective and more direct way to tune the electronic properties of correlated oxides. Although several approaches, such as thermal annealing and oxygen migration, have been introduced to change the oxygen content, a continuous and reversible solution that can be integrated with modern electronic technology is much in demand. Here, we report a novel ionic field-effect transistor using solid Gd-doped CeO2 as the gate dielectric, which shows a remarkable carrier-density-tuning ability via electric-field-controlled oxygen concentration at room temperature. In Bi2Sr2CaCu2O8+δ (Bi-2212) thin flakes, we achieve a reversible superconductor–insulator transition by driving oxygen ions in and out of the samples with electric fields, and map out the phase diagram all the way from the insulating regime to the over-doped superconducting regime by continuously changing the oxygen doping level. Scaling analysis indicates that the reversible superconductor–insulator transition for the Bi-2212 thin flakes follows the theoretical description of a two-dimensional quantum phase transition. Our work provides a route for realizing electric-field control of phase transition in correlated oxides. Moreover, the configuration of this type of transistor makes heterostructure/interface engineering possible, thus having the potential to serve as the next-generation all-solid-state field-effect transistor.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2023

Engineering metal oxidation using epitaxial strain

The oxides of platinum group metals are promising for future electronics and spintronics due to the delicate interplay of spin-orbit coupling and electron correlation energies. However, their synthesis as thin films remains challenging due to their low vapour pressures and low oxidation potentials. Here we show how epitaxial strain can be used as a control knob to enhance metal oxidation. Using Ir as an example, we demonstrate the use of epitaxial strain in engineering its oxidation chemistry, enabling phase-pure Ir or IrO 2 films despite using identical growth conditions. The observations are explained using a density-functional-theory-based modified formation enthalpy framework, which highlights the important role of metal-substrate epitaxial strain in governing the oxide formation enthalpy. We also validate the generality of this principle by demonstrating epitaxial strain effect on Ru oxidation. The IrO 2 films studied in our work further revealed quantum oscillations, attesting to the excellent film quality. The epitaxial strain approach we present could enable growth of oxide films of hard-to-oxidize elements using strain engineering.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Evaluating tantalum oxide stoichiometry and oxidation states for optimal memristor performance

Tantalum oxide has shown promising electrical switching characteristics for memristor devices. Consequently, a number of reports have investigated the electrical behavior of TaO{sub x} thin films. Some effort has been made to characterize the composition of the TaO{sub x} films and it is known that there must be an optimal stoichiometry of TaO{sub x} where forming and switching behavior are optimized. However, many previous reports lack details on the methodology used for identifying the chemistry of the films. X-ray photoelectron spectroscopy has been the most commonly used technique; however, peak fitting routines vary widely among reports and a native surface oxide of Ta{sub 2}O{sub 5} often confounds the analysis. In this report a series of large area TaO{sub x} films were deposited via sputtering with controlled O{sub 2} partial pressures in the sputtering gas, resulting in tunable oxide compositions. Spectra from numerous samples from each wafer spanning a range of oxide stoichiometries were used to develop a highly constrained peak fitting routine. This procedure allowed for the composition of the TaO{sub x} films to be identified with greater detail than elemental ratios alone. Additionally, the peak fitting routine was used to evaluate uniformity of deposition across individual wafers. The appearance of a greater contribution of Ta{sup 4+} oxidation states in the oxygen starved films are believed to relate to films with optimal forming characteristics.

36 MATERIALS SCIENCE↗
NASA NTRS1978

Effects of ultrathin oxides in conducting MIS structures on GaAs

Schottky barrier-type GaAs baseline devices (semiconductor surface etched and then immediately metalized) and GaAs conducting metal oxide-semiconductor devices are fabricated and characterized. The baseline surfaces (no purposeful oxide) are prepared by a basic or an acidic etch, while the surface for the MIS devices are prepared by oxidizing after the etch step. The metallizations used are thin-film Au, Ag, Pd, and Al. It is shown that the introduction of purposeful oxide into these Schottky barrier-type structures examined on n-type GaAs modifies the barrier formation, and that thin interfacial layers can modify barrier formation through trapping and perhaps chemical reactions. For Au- and Pd-devices, enhanced photovoltaic performance of the MIS configuration is due to increased barrier height.

Childs, R. B.↗
DOE OSTI2014

The effect of the annealing temperature on the transition from conductor to semiconductor behavior in zinc tin oxide deposited atomic layer deposition

We investigated the electrical properties of zinc tin oxide (ZTO) films deposited via atomic layer deposition and compared them to ZnO and SnO{sub 2} films as a function of the annealing temperature. The ZTO and ZnO, except for SnO{sub 2}, films exhibited an electrical transition from a metal to semiconductor characteristics when annealed above 300 °C. The X-ray photoelectron spectroscopy analyses indicate that the relative area of the oxygen vacancy-related peak decreased from 58% to 41% when annealing at temperatures above 400 °C. Thin film transistors incorporating ZTO active layers demonstrated a mobility of 13.2 cm{sup 2}/V s and a negative bias instability of −0.2 V.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Infrared-optical spectroscopy of transparent conducting perovskite (La,Ba)SnO{sub 3} thin films

We have performed optical transmission, reflection, spectroscopic ellipsometry, and Hall effect measurements on the electron-doped La{sub x}Ba{sub 1–x}SnO{sub 3} (x = 0.04) transparent thin films. From the infrared Drude response and plasma frequency analysis we determine the effective mass of the conducting electron m* = 0.35m{sub 0}. In the visible-UV region the optical band gap shifts to high energy in (La,Ba)SnO{sub 3} by 0.18 eV compared with undoped BaSnO{sub 3} which, in the context of the Burstein-Moss analysis, is consistent with the infrared-m*. m* of BaSnO{sub 3} is compared with other existing transparent conducting oxides (TCO), and implication on search for high-mobility TCO compounds is discussed.

36 MATERIALS SCIENCE↗
DOE OSTI2015

A Low-Temperature, Solution-Processable, Cu-Doped Nickel Oxide Hole-Transporting Layer via the Combustion Method for High-Performance Thin-Film Perovskite Solar Cells

The promising photophysical properties of the emerging organometallic halide perovskites, such as intense broadband absorption, high charge carrier mobility, and long charge diffusion length, have enabled the rapid development in solar cells reaching over 20% power conversion effi ciency (PCE) recently. Especially, the low material cost and facile solution processability of perovskites are very attractive as next-generation photovoltaic materials for sustainable energy.

14 SOLAR ENERGY↗
DOE OSTI2023

Dual-Band Electrochromism in Hydrous Tungsten Oxide

The independent modulation of visible and near-infrared light by a single material, termed dualband electrochromism, is highly desirable for smart windows to enhance the energy efficiency of buildings. Tungsten oxides are commercially important electrochromic materials, exhibiting reversible visible and near-infrared absorption when electrochemically reduced in an electrolyte containing small cations or protons. The presence of structural water in tungsten oxides has been associated with faster electrochromic switching speeds. Here, we find that WO 3 ·H 2 O, a crystalline hydrate, exhibits dual-band electrochromism unlike the anhydrous WO 3 providing a heretofore unexplored route to tune the electrochromic response of tungsten oxides. Absorption of near-infrared light is achieved at low Li + /e - injection, followed by the absorption of visible light at higher Li + /e - injection as a result of an electrochemically-induced phase transition. We propose that this dual-band modulation is possible due to the more open structure of WO 3 ·H 2 O as compared to WO 3 . This facilitates a more extended solid solution Li + insertion regime that benefits the modulation of near-infrared radiation via plasmon absorption. Higher degrees of Li + /e - insertion lead to polaronic absorption associated with localized charge storage. Furthermore, these results inform how structural factors influence the electrochemically induced spectral response of transition metal oxides and the important role of structural water beyond optical switching speed.

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗
DOE OSTI2015

Characterization of Ru thin films from a novel CVD/atomic layer deposition precursor “Rudense” for capping layer of Cu interconnects

The authors have succeeded in development of a novel Ru precursor, Ru(EtCp)(η{sup 5}-CH{sub 2}C(Me)CHC(Me)O) [Rudense], for CVD and atomic layer deposition (ALD) processes under nonoxidative condition. Rudense has sufficient vapor pressure and good thermal stability (decomposition temperature = ca. 230 °C). Ru thin films were grown on Pt, Ru, Si, and SiO{sub 2} substrates using Rudense and NH{sub 3} as Ru precursor and reactant, respectively. Rudense gave the conformal, low-impurity (<10{sup 21} atoms/cc), and low-resistivity (16 μΩ cm) Ru thin films. Moreover, Rudense showed substrate selectivity; therefore, Rudense will be a candidate for area-selective CVD and ALD precursor for Ru capping layers of Cu interconnects.

36 MATERIALS SCIENCE↗
DOE OSTI2025

A General Solution Route to Nanoporous Metal Oxide Films

Metal oxide semiconductors are of interest as efficient, stable, and low-cost photoanode materials for photoelectrochemical water splitting, but their characteristically poor charge transport properties remain a fundamental challenge to practical use. Nanoporous metal oxide films that feature open bicontinuous networks of nanocrystals and nanopores can overcome such inefficient charge transport to enable high-performance photoanodes. Here, this paper describes a general method to make high-quality nanoporous films of metal oxides by spin coating and calcining molecular inks that contain a porosity-generating block copolymer. Phase-pure nanoporous films of BiFeO 3 , FeWO 4 , WO 3 , Fe 2 O 3 , and TiO 2 serve to demonstrate the versatility of the approach. It is demonstrated that the crystallite size, film porosity, and film thickness can be independently tuned by adjusting the ink composition and film processing conditions. The method is extended to fabricate core–shell nanoporous films consisting of a nanoporous film coated in a thin shell of a second metal oxide, using WO 3 –BiVO 4 and BiFeO 3 –BiVO 4 as examples. Given its simplicity and flexibility, this solution-phase route should prove useful for making nanoporous films of many different materials for a variety of applications, including energy conversion and storage, catalysis, and chemical sensing.

coating materials↗
DOE OSTI2014

Aqueous phase deposition of dense tin oxide films with nano-structured surfaces

Dense tin oxide films were successfully fabricated in an aqueous solution. The pH of the solutions was controlled to pH 1.3 by addition of HCl. Precise control of solution condition and crystal growth allowed us to obtain dense tin oxide films. Concave–convex surface of fluorine-doped tin oxide (FTO) substrates was entirely-covered with the continuous films. The films were about 65 nm in thickness and had nano-structured surfaces. Morphology of the films was strikingly different from our previous reported nano-sheet assembled structures. The films were not removed from the substrates by strong water flow or air blow to show strong adhesion strength. The aqueous solution process can be applied to surface coating of various materials such as nano/micro-structured surfaces, particles, fibers, polymers, metals or biomaterials. - Graphical abstract: Dense tin oxide films of 65 nm were successfully fabricated in an aqueous solution. They had nano-structured surfaces. Concave-convex substrates were entirely-covered with the continuous films. - Highlights: • Dense tin oxide films of 65 nm were successfully fabricated in an aqueous solution. • They had nano-structured surfaces. • Concave–convex substrates were entirely-covered with the continuous films.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
NASA NTRS1980

Preliminary study of a solar selective coating system using black cobalt oxide for high temperature solar collectors

Black cobalt oxide coatings (high solar absorptance layer) were deposited on thin layers of silver or gold (low emittance layer) which had been previously deposited on oxidized (diffusion barrier layer) stainless steel substrates. The reflectance properties of these coatings were measured at various thicknesses of cobalt for integrated values of the solar and infrared spectrum. The values of absorptance and emittance were calculated from the measured reflectance values, before and after exposure in air at 650 C for approximately 1000 hours. Absorptance and emittance were interdependent functions of the weight of cobalt oxide. Also, these cobalt oxide/noble metal/oxide diffusion barrier coatings have absorptances greater than 0.90 and emittances of approximately 0.20 even after about 1000 hours at 650 C.

Mcdonald, G.↗