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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 1,675 records · Page 93
All sourcesNASA NTRSDOE OSTI
DOE OSTI2014

Perpendicular magnetic tunnel junction with thin CoFeB/Ta/Co/Pd/Co reference layer

Integration of high density spin transfer torque magnetoresistance random access memory requires a thin stack (less than 15 nm) of perpendicular magnetic tunnel junction (p-MTJ). We propose an innovative approach to solve this challenging problem by reducing the thickness and/or moment of the reference layer. A thin reference layer structure of CoFeB/Ta/Co/Pd/Co has 60% magnetic moment of the conventional thick structure including [Co/Pd] multilayers. We demonstrate that the perpendicular magnetization of the CoFeB/Ta/Co/Pd/Co structure can be realized by anti-ferromagnetically coupling to a pinned layer with strong perpendicular anisotropy via Ruderman-Kittel-Kasuya-Yosida exchange interaction. The pMTJ with thin CoFeB/Ta/Co/Pd/Co reference layer has a comparable TMR ratio (near 80%) as that with thick reference layer after annealing at 280 °C. The pMTJ with thin reference layer has a total thickness less than 15 nm, thereby significantly increasing the etching margin required for integration of high density pMTJ array on wafers with form factor of 300 mm and beyond.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Physical mechanisms of SiN{sub x} layer structuring with ultrafast lasers by direct and confined laser ablation

In the production process of silicon microelectronic devices and high efficiency silicon solar cells, local contact openings in thin dielectric layers are required. Instead of photolithography, these openings can be selectively structured with ultra-short laser pulses by confined laser ablation in a fast and efficient lift off production step. Thereby, the ultrafast laser pulse is transmitted by the dielectric layer and absorbed at the substrate surface leading to a selective layer removal in the nanosecond time domain. Thermal damage in the substrate due to absorption is an unwanted side effect. The aim of this work is to obtain a deeper understanding of the physical laser-material interaction with the goal of finding a damage-free ablation mechanism. For this, thin silicon nitride (SiN{sub x}) layers on planar silicon (Si) wafers are processed with infrared fs-laser pulses. Two ablation types can be distinguished: The known confined ablation at fluences below 300 mJ/cm{sup 2} and a combined partial confined and partial direct ablation at higher fluences. The partial direct ablation process is caused by nonlinear absorption in the SiN{sub x} layer in the center of the applied Gaussian shaped laser pulses. Pump-probe investigations of the central area show ultra-fast reflectivity changes typical for direct laser ablation. Transmission electron microscopy results demonstrate that the Si surface under the remaining SiN{sub x} island is not damaged by the laser ablation process. At optimized process parameters, the method of direct laser ablation could be a good candidate for damage-free selective structuring of dielectric layers on absorbing substrates.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Layered structure and related magnetic properties for annealed Fe/Ir(111) ultrathin films

After annealing treatments for fcc-Fe/Ir(111) below 600 K, the surface layers remain pseudomorphic. The Ir(111) substrate plays an important role on the expanded Fe lattice. At temperatures between 750 and 800 K, the surface composition shows a stable state and a c(2 × 4) structure is observed. We discover a layered structure composed of some Fe atoms on the top of a Fe{sub 0.5}Ir{sub 0.5} interfacial alloy supported on the Ir(111) substrate. The competition between the negative formation heat of Fe{sub 0.5}Ir{sub 0.5} and surface free energy of Fe causes the formation of layered structure. The existence of ferromagnetic dead layer coincides with the formation of fcc-Fe for ultrathin Fe on Fe{sub 0.5}Ir{sub 0.5}/Ir(111). For Fe films thicker than three monolayers, the linear increase of the Kerr intensity versus the Fe coverage is related to the growing of bcc-Fe on the surface where the Fe layer is incoherent to the underlying Fe{sub 0.5}Ir{sub 0.5}/Ir(111). These results emphasize the importance of the substrate induced strain and layered structure of Fe/Fe{sub 0.5}Ir{sub 0.5}/Ir(111) on the magnetic properties and provide valuable information for future applications.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Thermally enhanced perpendicular magnetic anisotropy behaviors of ultrathin [Co/Pd]{sub n} multilayers via NiO{sub x} capping layer

We report the enhanced perpendicular magnetic anisotropy (PMA) features of ultrathin [Co/Pd]{sub 3} multilayers (MLs) employing a NiO{sub x} insertion layer at high annealing temperatures. Thermally enhanced PMA in [Co/Pd]{sub 3}/NiO{sub x} (capping layer) MLs were achieved at a specific capping layer thickness, while no PMA responses were observed for a NiO{sub x} (buffer layer)/[Co/Pd]{sub 3} ML, regardless of NiO{sub x} thickness. X-ray diffraction observations, including rocking curves, identified the relatively different crystalline characteristics of the NiO{sub x} capping and buffer layers. Origin of the enhanced PMAs of [Co/Pd]{sub 3} MLs containing a NiO{sub x} capping layer is described based on the NiO{sub x} capping effect possibly providing additional Co/Oxide i-PMA under high-temperature annealing.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Perpendicular magnetic tunnel junctions with double barrier and single or synthetic antiferromagnetic storage layer

The magnetic properties of double tunnel junctions with perpendicular anisotropy were investigated. Two synthetic antiferromagnetic references are used, while the middle storage magnetic layer can be either a single ferromagnetic or a synthetic antiferromagnetic FeCoB-based layer, with a critical thickness as large as 3.0 nm. Among the different achievable magnetic configurations in zero field, those with either antiparallel references, and single ferromagnetic storage layer, or parallel references, and synthetic antiferromagnetic storage layer, are of particular interest since they allow increasing the efficiency of spin transfer torque writing and the thermal stability of the stored information as compared to single tunnel junctions. The latter configuration can be preferred when stray fields would favour a parallel orientation of the reference layers. In this case, the synthetic antiferromagnetic storage layer is also less sensitive to residual stray fields.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Role of the wetting layer in the enhanced responsivity of InAs/GaAsSb quantum dot infrared photodetectors

InAs/GaAs{sub 1−x}Sb{sub x} Quantum Dot (QD) infrared photodetectors are analyzed by photocurrent spectroscopy. We observe that the integrated responsivity of the devices is improved with the increasing Sb mole fraction in the capping layer, up to 4.2 times for x = 17%. Since the QD layers are not vertically aligned, the vertical transport of the carriers photogenerated within the QDs takes place mainly through the bulk material and the wetting layer of the additional QD regions. The lower thickness of the wetting layer for high Sb contents results in a reduced capture probability of the photocarriers, thus increasing the photoconductive gain and hence, the responsivity of the device. The growth of not vertically aligned consecutive QD layers with a thinner wetting layer opens a possibility to improve the performance of quantum dot infrared photodetectors.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Influence of O-Co-O layer thickness on the thermal conductivity of Na{sub x}Co{sub 2}O{sub 4} studied by positron annihilation

Nominal stoichiometric Na{sub x}Co{sub 2}O{sub 4} (x = 1.0, 1.2, 1.4, 1.6, 1.8, and 2.0) polycrystals were synthesized by a solid-state reaction method. They were further pressed into pellets by the spark plasma sintering. The crystal structure and morphology of Na{sub x}Co{sub 2}O{sub 4} samples were characterized by X-ray diffraction and scanning electron microscopy measurements. Good crystallinity and layered structures were observed for all the samples. Positron annihilation measurements were performed for Na{sub x}Co{sub 2}O{sub 4} as a function of Na content. Two lifetime components are resolved. τ{sub 1} is attributed mainly to positron annihilation in the O-Co-O layers and shifts to Na layers only in the H3 phase. The second lifetime τ{sub 2} is due to positron annihilation in vacancy clusters which may exist in the Na layers or grain boundary region. The size of vacancy clusters grow larger but their concentration decreases with increasing Na content in the range of 1.0 < x < 1.8. The thickness of O-Co-O layer also shows continuous increase with increasing Na content, which is reflected by the increase of τ{sub 1}. The thermal conductivity κ, on the other hand, shows systematic decrease with increasing Na content. This suggests that the increasing spacing of O-Co-O layer could effectively reduce the thermal conductivity of Na{sub x}Co{sub 2}O{sub 4}.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Enhanced photocurrent density in graphene/Si based solar cell (GSSC) by optimizing active layer thickness

Thickness dependent photocurrent density in active layer of graphene/Si based solar cell has been investigated via analytical – simulation study. This report is a preliminary comparison of experimental and analytical investigation of graphene/Si based solar cell. Graphene sheet was interfaced with Si thin film forming heterojunction solar cell that was treated as a device model for photocurrent generator. Such current can be enhanced by optimizing active layer thickness and involving metal oxide as supporting layer to shift photons absorption. In this case there are two type of devices model with and without TiO{sub 2} in which the silicon thickness varied at 20 – 100 nm. All of them have examined and also compared with each other to obtain an optimum value. From this calculation it found that generated currents almost linear with thickness but there are saturated conditions that no more enhancements will be achieved. Furthermore TiO{sub 2} layer is effectively increases photon absorption but reducing device stability, maximum current is fluctuates enough. This may caused by the disturbance of excitons diffusion and resistivity inside each layer. Finally by controlling active layer thickness, it is quite useful to estimate optimization in order to develop the next solar cell devices.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Hydrodynamic structure of the boundary layers in a rotating cylindrical cavity with radial inflow

A flow model is formulated to investigate the hydrodynamic structure of the boundary layers of incompressible fluid in a rotating cylindrical cavity with steady radial inflow. The model considers mass and momentum transfer coupled between boundary layers and an inviscid core region. Dimensionless equations of motion are solved using integral methods and a space-marching technique. As the fluid moves radially inward, entraining boundary layers develop which can either meet or become non-entraining. Pressure and wall shear stress distributions, as well as velocity profiles predicted by the model, are compared to numerical simulations using the software OpenFOAM. Hydrodynamic structure of the boundary layers is governed by a Reynolds number, Re, a Rossby number, Ro, and the dimensionless radial velocity component at the periphery of the cavity, U{sub o}. Results show that boundary layers merge for Re < < 10 and Ro > > 0.1, and boundary layers become predominantly non-entraining for low Ro, low Re, and high U{sub o}. Results may contribute to improve the design of technology, such as heat exchange devices, and turbomachinery.

42 ENGINEERING↗
DOE OSTI2016

Quasi-monoenergetic proton beam from a proton-layer embedded metal foil irradiated by an intense laser pulse

A target structure, ion-layer embedded foil (ILEF) is proposed for producing a quasi-monoenergetic proton beam by utilizing a bulk electrostatic field, which is generated by irradiating the target with an ultra-intense laser pulse, inside the plasma. Compared with the case of a single metal foil in which the proton layer is initially present on the surface, in the ILEF target, the proton layer is initially located inside a metal foil. A two-dimensional particle-in-cell (PIC) simulation shows that the target generates a proton beam with a narrow energy spread. With a laser intensity of 2 × 10{sup 19 }W/cm{sup 2}, a 22-MeV proton beam with an energy spread of 8% at the full-width-half-maximum (FWHM) is obtained when the proton layer is located at 0.4 μm inside the rear surface of a 2.4 μm-thick copper foil. When the proton layer moves toward the front side, a proton beam with a flat-top energy distribution ranging from 15 MeV to 35 MeV is obtained. Further, with a higher laser intensity of 10{sup 21 }W/cm{sup 2}, a proton beam with the maximum energy of 345 MeV and FWHM energy spread of 7.2% is obtained. The analysis of the PIC simulation with an aid of a fluid analysis shows that the spectrum is affected by the initial position of the proton layer, its initial spread during the formation of the sheath field, and the space charge effect.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2016

Periodic molybdenum disc array for light trapping in amorphous silicon layer

We demonstrate the light trapping effect in amorphous silicon (a-Si:H) layer by inserting a layer of periodic molybdenum disc array (MDA) between the a-Si:H layer and the quartz substrate, which forms a three-layer structure of Si/MDA/SiO{sub 2}. The MDA layer was fabricated by a new cost-effective method based on nano-imprint technology. Further light absorption enhancement was realized through altering the topography of MDA by annealing it at 700°C. The mechanism of light absorption enhancement in a-Si:H interfaced with MDA was analyzed, and the electric field distribution and light absorption curve of the different layers in the Si/MDA structure under light illumination of different wavelengths were simulated by employing numerical finite difference time domain (FDTD) solutions.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2016

Boost up the electrical performance of InGaZnO thin film transistors by inserting an ultrathin InGaZnO:H layer

This study examined the electrical performance of bilayer channel InGaZnO:H/InGaZnO thin-film transistors (TFTs). The field-effect mobility and bias stress stability of the InGaZnO device were improved by inserting the hydrogenated InGaZnO ultrathin layer compared to the pure InGaZnO single channel layer device. As a consequence, a high field-effect mobility of 55.3 cm{sup 2}/V s, a high on/off current ratio of 10{sup 8}, a threshold voltage of 0.7 V, and a small sub-threshold swing of 0.18 V/decade have been achieved. The X-ray photoelectron spectroscopy and low-frequency noise analysis suggest that these desirable properties should be attributed to the ultrathin InGaZnO:H layer, which could provide suitable carrier concentration and reduce the average trap density near the channel and insulator layer interface. Meanwhile, the channel conductance of the bilayer device is controlled by thick InGaZnO layer through formation barrier energy for electron transport at the interface of InGaZnO:H and InGaZnO layer. These improved electrical properties have represented a great step towards the achievement of transparent, high performances, and low-cost metal oxide TFTs.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Trapped charge densities in Al{sub 2}O{sub 3}-based silicon surface passivation layers

In Al{sub 2}O{sub 3}-based passivation layers, the formation of fixed charges and trap sites can be strongly influenced by small modifications in the stack layout. Fixed and trapped charge densities are characterized with capacitance voltage profiling and trap spectroscopy by charge injection and sensing, respectively. Al{sub 2}O{sub 3} layers are grown by atomic layer deposition with very thin (∼1 nm) SiO{sub 2} or HfO{sub 2} interlayers or interface layers. In SiO{sub 2}/Al{sub 2}O{sub 3} and HfO{sub 2}/Al{sub 2}O{sub 3} stacks, both fixed charges and trap sites are reduced by at least a factor of 5 compared with the value measured in pure Al{sub 2}O{sub 3}. In Al{sub 2}O{sub 3}/SiO{sub 2}/Al{sub 2}O{sub 3} or Al{sub 2}O{sub 3}/HfO{sub 2}/Al{sub 2}O{sub 3} stacks, very high total charge densities of up to 9 × 10{sup 12} cm{sup −2} are achieved. These charge densities are described as functions of electrical stress voltage, time, and the Al{sub 2}O{sub 3} layer thickness between silicon and the HfO{sub 2} or the SiO{sub 2} interlayer. Despite the strong variation of trap sites, all stacks reach very good effective carrier lifetimes of up to 8 and 20 ms on p- and n-type silicon substrates, respectively. Controlling the trap sites in Al{sub 2}O{sub 3} layers opens the possibility to engineer the field-effect passivation in the solar cells.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2017

Effect of scrape-off-layer current on reconstructed tokamak equilibrium

Methods are described that extend fields from reconstructed equilibria to include scrape-off-layer current through extrapolated parametrized and experimental fits. The extrapolation includes both the effects of the toroidal-field and pressure gradients which produce scrape-off-layer current after recomputation of the Grad-Shafranov solution. To quantify the degree that inclusion of scrape-off-layer current modifies the equilibrium, the χ-squared goodness-of-fit parameter is calculated for cases with and without scrape-off-layer current. The change in χ-squared is found to be minor when scrape-off-layer current is included however flux surfaces are shifted by up to 3 cm. Here the impact on edge modes of these scrape-off-layer modifications is also found to be small and the importance of these methods to nonlinear computation is discussed.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2012

Bragg fibres with an intermediate layer

This paper examines the effect of an intermediate layer between the core and periodic cladding of a Bragg fibre on its optical properties. It is shown that any TE{sub 0{kappa}} mode of a standard Bragg fibre can be transformed into the fundamental mode of a Bragg fibre with an intermediate layer by adjusting the thickness of the first cladding layer. Varying the thickness of the intermediate layer, one can tune the mode composition of the transmitted light in a periodic manner. The periodic variation of the optical loss with the thickness of the intermediate layer is due to resonances and antiresonances in this layer. The resonances correspond to two-mode light propagation through the fibre, whereas the antiresonances, to single-mode light propagation.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2017

Delta-layer model for the boundary of a bubble excited by an electron bunch or laser pulse in a plasma channel

We present an analytical model of a plasma bubble excited by a relativistic electron bunch or a high-power laser pulse moving in the plasma, with allowance for a surrounding thin electron layer (delta-layer). It is shown that in calculations of accelerating and focusing fields, the electron layer at the bubble boundary, provided the layer thickness is small enough, can be considered as two-dimensional and consisting of surface charges and currents. This model is compared with the bubble model having a finite thickness of the electron layer, and it is shown that the parameter region, within which our model is valid, is small compared to the region where the effect of finite thickness is significant. On the other hand, the proposed model, representing the simplest model of a bubble in a transversely inhomogeneous plasma, allows the transition to a model with a finite thickness of the electron layer by means of changing the scales of coordinates. (paper)

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2022

Zonal shear layer collapse and the power scaling of the density limit: old L-H wine in new bottles

Edge shear layer collapse causes edge cooling and aggravates radiative effects. This paper details on the microscopic dynamics of the emergence of power (Q) scaling of density limit (DL) from the shear layer collapse transport bifurcation scenario. The analysis is based on a novel 4-field model, which evolves turbulence energy, zonal flow energy, temperature gradient and density, including the neoclassical screening of zonal flow response. Bifurcation analysis yields power scaling of critical density for shear layer collapse as $n_{crit}\sim Q^{1/3}$. The favorable Q scaling of the DL emerges from the fact that the shear layer strength increases with Q, thus preventing shear layer collapse. This in turn reduces particle transport and improves particle confinement. RMP induced ambient stochastic fields degrade the shear layer by inducing decoherence in the Reynolds stress. As a result the particle transport increases and particle confinement degrades. This leads to the emergence of unfavorable stochastic field intensity ($b_{st}^{2}$) scaling of the critical density as $n_{crit}\sim(1+b_{st}^{2})^{-5/3}$. All fields, including zonal flow shear, exhibit hysteresis when the power (Q) is ramped cyclically across the bifurcation point. The hysteresis is due to dynamical delay in bifurcation on account of critical slowing down. Furthermore, the dynamical hysteresis here is fundamentally different from the hysteresis associated with the existence of bi-stable states.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2024

Recommendations on setup in simulating atmospheric gravity waves under conventionally neutral boundary layer conditions

Wind farm-induced atmospheric gravity waves have been the subject of recent research as they can impact wind farm performance. Pressure variations associated with gravity waves can contribute to the global blockage effect and wind farm wake recovery. Therefore, accurate numerical simulation of flow fields, where wind-farm-induced gravity waves may be produced, is important. Three main considerations in such simulations are the overall domain size, the use of Rayleigh damping near domain boundaries to dampen gravity waves, and advection damping at the inlet to prevent spurious oscillations. Often these considerations are treated ad hoc rather than systematically. This work aims to test and extend the systematic modelling of internal gravity waves proposed in a preliminary investigation to modelling of both internal and trapped gravity waves. The preliminary study identifies the length scales to set the domain and damping layer sizes and the time scale to configure the Rayleigh damping coefficient but under linearly stratified conditions. Large eddy simulations of flow through a wind farm canopy are performed under conventionally neutral boundary layer (CNBL) conditions to test the validity of proposed setups for CNBL conditions. Background atmospheric parameters, such as Froude number (Fr), inversion height (H i ), and inversion layer Froude number (Fr i ) control most of the atmospheric gravity wave characteristics. We validated for CBNL conditions that the effective wavelengths of the internal gravity waves are the correct length scale to configure the domain size and damping layer thickness. Likewise, the optimum damping coefficient to dampen the internal gravity waves relates to the free atmosphere's buoyancy frequency or buoyant perturbations' time scale. We infer that the damping coefficient in the inversion layer may relate to the inversion buoyancy frequency to effectively dampen the trapped gravity waves. Moreover, the advection damping length is linked to the horizontal wavelength of the trapped gravity waves in the inversion layer to prevent spurious waves at the inlet by retaining wave energy accumulation.

17 WIND ENERGY↗