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At least 1,675 records · Page 93

Design, Construction, and Testing of 0.5-m, 18-mm Period Nb 3 Sn Superconducting Undulator Magnets

We report design and fabrication of a new Nb 3 Sn-based superconducting undulator (SCU) are underway at the Advanced Photon Source (APS) of Argonne National Laboratory in collaboration with Fermilab and Lawrence Berkeley National Laboratory. To develop a robust and reliable fabrication process, the magnet development consists of several steps. First, magnetic and mechanical simulations were performed to optimize the magnet design; then, the design matured further by fabricating and testing a series of very short prototypes, ~8 cm long with a period length of 18 mm. These short prototype studies were previously reported. Second, the design was scaled to an intermediate length of ~0.5 m. These two steps led to the final design of ~1.1–m-long magnets, which are currently being fabricated. The quench behavior of each 0.5-m-long undulator magnet, as well as undulator assemblies from these magnets, was studied. The first SCU magnet assembly did not meet the design specifications due to the breakdown of the insulation. With an improved design and fabrication process based on lessons learned, the second SCU assembly achieved the design undulator field of 1.2 T. The design was further optimized, and the third set of magnets was fabricated and successfully tested.

43 PARTICLE ACCELERATORS↗

Mitigating the Effects of Au-Al Intermetallic Compounds Due to High-Temperature Processing of Surface-Electrode Ion Traps

Stringent physical requirements need to be met for the high-performing surface-electrode ion traps used in quantum computing and timekeeping. In particular, these traps must survive a high-temperature environment for vacuum chamber preparation and support high RF voltage on closely spaced electrodes. Due to the use of gold wire bonds on aluminum pads, intermetallic growth can lead to wire bond failure via breakage or high resistance, limiting the lifetime of a trap assembly to a single multiday bake at 200 ° C. Using traditional thick metal stacks to prevent intermetallic growth, however, can result in trap failure due to RF breakdown events. Through high-temperature experiments, we conclude that an ideal metal stack for ion traps is Ti/Pt/Au (20/100/250 nm), which allows for a cumulative bakeable time of roughly 86 days without compromising the trap voltage performance. This increase in the bakeable lifetime of ion traps will remove the need to discard otherwise functional ion traps when vacuum hardware is upgraded, which will greatly benefit ion trap experiments.

Haltli, Raymond A.↗

HVDC Surface Flashover in Compressed Air for Various Dielectrics

Here, this study measures the voltage at which flashover occurs in compressed air for a variety of dielectric materials and lengths in a uniform field for DC voltages up to 100 kV. Statistical time lag is recorded and characterized, displaying a roughly exponential dependence on breakdown voltage. Of the materials tested, acrylic is observed to be the most resistant to flashover. These data are intended to facilitate the design of compressed-air insulated high voltage systems as an alternative to SF 6 insulated systems.

42 ENGINEERING↗

Humidity-Dependent Electrostatic Charge Decay on Dielectric Surface in Enclosed Volumes

Electrostatic surface charge decay is investigated to determine loss mechanisms, the effect of humidity, enclosure size, and material. This work focuses on charging dielectric and metal surfaces close to the electrical breakdown threshold in atmospheric air under humid and dry conditions. After initial charging to a maximum potential of roughly 30 kV, the associated surface charge is allowed to decay because of recombining with ions from the natural background, resulting in decay times ranging from minutes to hours to days. Spheres with a radius of 50 mm consisting of varying materials (PTFE and metal as referenced later) are charged and tested at relative humidity levels, RH, of 10%, 35%, and 64%. It was found that the ion-ion pair production rate and the enclosure size affected the measured charge decay rate. The impact of air convection on charge decay in the open air (no enclosure) is discussed. The humidity increased the rate of charge decay on the metal and dielectric spheres. For example, in the first 25 minutes after charging, the total charge on the PTFE sphere decreased to 66%or 50% from its initial value in the 10% and 35% RH tests, respectively. An equivalent generation rate is found for the ions in the enclosure, with 10 and 24 ion pairs cm −3 s −1 being generated at a 5% and 49% relative humidity, respectively.

42 ENGINEERING↗

Electrical and Thermal Performance of Ga₂O₃–Al₂O₃–Diamond Super-Junction Schottky Barrier Diodes

The design space of Ga 2 O 3 -based devices is severely constrained due to its low thermal conductivity and absence of viable p-type dopants. In this work, we discuss the limits of operation of a novel Ga 2 O 3 –Al 2 O 3 –diamond-based super-junction device concept, which can alleviate the constraints associated with Ga 2 O 3 -based devices. The improvements achieved using the proposed device concept are demonstrated through electrical and thermal simulations of Ga 2 O 3 –Al 2 O 3 –diamond-based super-junction Schottky barrier diodes (SJ-SBDs) and non-punch-through or conventional Schottky barrier diodes (NP-SBDs). The SJ-SBD enables operation below the R ON -breakdown voltage limit of Ga 2 O 3 NP-SBD, enabling >4 kV blocking voltage at R ON of 1–3 mΩ cm 2 . Here, the maximum switching frequency of SJ-SBD may be only a few kHz, as it is limited by the activation energy of acceptors (0.39 eV) in the diamond. Crucially, compared with NP-SBD, the use of diamond also results in ~60% reduction in temperature rise during static power dissipation. Polycrystalline diamond (PCD) properties depend on detailed microstructure and benefits compared to ideal Ga 2 O 3</sub NP-SBD arise for diamond critical fields ≥6 MV/cm and thermal conductivities as low as 50–150 W/(m • K).

36 MATERIALS SCIENCE↗

12.5 kV GaN Super-Heterojunction Schottky Barrier Diodes

In this work, we report GaN super-heterojunction Schottky barrier diodes (SHJ-SBDs) with substantially improved performance. Metal-2DEG sidewall n-ohmic contacts were deployed to achieve low contact resistance of 0.75 Ω · mm, avoiding the risk of abnormally high contact resistance caused by inaccurate etch depth control. A pGaN notch formed near the cathode successfully eliminated excessive hole conduction caused by the sidewall n-ohmic contact. Isolation was improved by a high-energy Al implantation step. The resulting SHJ-SBD exhibited a breakdown voltage (BV) of 12.5 kV and a specific ON-resistance of 100.8 mΩ · cm 2 .

42 ENGINEERING↗

Implanted Guard Ring Edge Termination With Avalanche Capability for Vertical GaN Devices

Edge termination is the key building block in power devices to enable near-ideal, avalanche breakdown voltage (BV). Here, this work presents the design, fabrication, and physics of a GaN guard ring (GR) edge termination formed by selective-area nitrogen implantation through an epitaxial p-GaN layer. The fabrication of this termination only includes a single implantation step that does not require precise control of implant depth, rendering a large process latitude. The selective-area implantation produces p-GaN rings that are separated by the implanted, semi-insulating regions. The number and spacing of the p-type rings are found to determine the BV of the vertical GaN p-n diode. The 16-ring structure enables a BV of 1800 V, being 88% of the theoretical 1-D parallel-plane limit. Avalanche characteristics are observed in devices with a large variety of GR designs. Finally, we present a comprehensive survey on the efficiency, fabrication complexity, real estate, and avalanche capability of various edge termination techniques that have been reported in vertical GaN devices. The high efficiency (among the highest reported in avalanche-capable GaN terminations), simple and robust fabrication process, and uniform avalanche capability make this implanted GR a promising edge termination for high-voltage GaN devices.

42 ENGINEERING↗

Aluminum Boron Nitride Ferroelectric Field-Effect Transistors With ZnO Semiconductor Channel

The discovery of ferroelectricity in hafnium zirconium oxide (HfxZr 1−x O2) and related fluorite materials has spurred interest in ferroelectric devices suitable for integration with silicon integrated circuits (ICs), especially those that can be embedded in the back-end-of-line (BEOL) process. More recently, ferroelectricity has been found in wurtzite aluminum nitride-based materials, such as scandium and boron-doped aluminum nitride (Al 1−x ScxN and Al 1−x BxN). Although these materials currently have undesirably large coercive electric fields, and small breakdown electric field-to-coercive electric field ratio, their low processing temperatures and large remanent polarization offer intriguing possibilities for device applications. Furthermore, we report ferroelectric field-effect transistors (FeFETs) with a 15 nm thick Al0.88B0.12N layer and an 11 nm ZnO semiconductor channel, achieving a memory window >1 V and switching voltages ( V switch ) <±10 V.

42 ENGINEERING↗

Simulation and Modeling of Time-Resolved X-Ray Detector for the Saturn Accelerator

In this work, we present the technology-aided computer design (TCAD) device simulation and modeling of a silicon p-i-n diode for detecting time-dependent X-ray radiation. We show that the simulated forward and reverse breakdown current–voltage characteristics agree well with the measured data under nonradiation environment by only calibrating carrier lifetimes for the forward bias case and avalanche model critical fields for the reverse bias condition. Using the calibrated parameters and other nominal material properties, we simulated the radiation responses of the p-i-n diode and compared with experimental data when the diode was exposed to X-ray radiation at Sandia’s Saturn facility and the Idaho State University (ISU) TriMeV facility. For Saturn’s Gaussian dose-rate pulses, we show three findings from TCAD simulations. First, the simulated photocurrents are in excellent agreement with the measured data for two dose-rate pulses with peak values of 1.16×10 10 and 1.88×10 10 rad(Si)/s. Second, the simulation results of high dose-rate pulses predict increased delayed photocurrents with longer time tails in the diode electrical responses due to excess carrier generation. Third, simulated peak values of diode radiation responses versus peak dose rates at different bias conditions provide useful guidance to determine the dose-rate range that the p-i-n diode can reliably detect in experiment. For TriMeV’s non-Gaussian dose-rate pulse, our simulated diode response is in decent agreement with the measured data without further calibration. We also studied the effects of device geometry, recombination process, and dose-rate enhancement via TCAD simulations to understand the higher measured response in the time after the peak dose-rate radiation for the p-i-n diode exposed to TriMeV irradiation.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

Robust Distribution State Estimation for Reliable Locational Marginal Pricing under Cyber-Attacks

Here this paper examines the impact of false data injection (FDI) cyber-attacks on distribution system state estimation (DSSE) and the resulting distribution locational marginal price (DLMP) in power markets. Two robust high-breakdown regression estimators, namely S- and MM- estimators, are implemented to provide resistance against FDI attacks targeting measurements and grid topology, creating leverage points. The introduced estimators are compared to the weighted least squares (WLS) with a bad data detection and rejection module (BDD) and the robust Huber M-estimator. The proposed estimators are shown to be effective and compare favorably to both existing Huber M- and the WLS with BDD in the presence of topology FDI attacks. Both the S- and MM-estimators provide good performance in the case of clean and corrupted measurements. Their performance is comparable in this case to the Huber M- and the WLS, followed by a BDD module. The simulation considered a modified distribution IEEE 13 and 34-bus systems where the impact of FDI attack scenarios is shown on the state and the DLMP pricing in the presence of distributed Generation.

24 POWER TRANSMISSION AND DISTRIBUTION↗

A study on the impact of mid-gap defects on vertical GaN diodes

GaN is a favorable martial for future efficient high voltage power switches. GaN has not dominated the power electronics market due to immature substrate, homoepitaxial growth, and immature processing technology. Understanding the impact of the substrate and homoepitaxial growth on the device performance is crucial for boosting the performance of GaN. Here, we studied vertical GaN PiN diodes that were fabricated on non-homogenous Hydride Vapor Phase Epitaxy (HVPE) substrates from two different vendors. We show that defects which stemmed from growth techniques manifest themselves as leakage hubs. Different non-homogenous substrates showed different distribution of those defects spatially with the lesser quality substrates clustering those defects in clusters that causes pre-mature breakdown. Energetically these defects are mostly mid-gap around 1.8Ev with light emission spans from 450nm to 700nm. Photon emission spectrometry and hyperspectral electroluminescence were used to locate these defects spatially and energetically.

42 ENGINEERING↗

Experimental nitrogen and phosphorus enrichment stimulates multiple trophic levels of algal and detrital-based food webs: a global meta-analysis from streams and rivers

Anthropogenic increases in nitrogen (N) and phosphorus (P) concentrations can strongly influence the structure and function of ecosystems. Even though lotic ecosystems receive cumulative inputs of nutrients applied to and deposited on land, no comprehensive assessment has quantified nutrient-enrichment effects within streams and rivers. We conducted a meta-analysis of published studies that experimentally increased concentrations of N and/or P in streams and rivers to examine how enrichment alters ecosystem structure (state: primary producer and consumer biomass and abundance) and function (rate: primary production, leaf breakdown rates, metabolism) at multiple trophic levels (primary producer, microbial heterotroph, primary and secondary consumers, and integrated ecosystem). Our synthesis included 184 studies, 885 experiments, and 3497 biotic responses to nutrient enrichment. We documented widespread increases in organismal biomass and abundance (mean response = +48%) and rates of ecosystem processes (+54%) to enrichment across multiple trophic levels, with no large differences in responses among trophic levels or between autotrophic or heterotrophic food-web pathways. Responses to nutrient enrichment varied with the nutrient added (N, P, or both) depending on rate versus state variable and experiment type, and were greater in flume and whole-stream experiments than in experiments using nutrient-diffusing substrata. Generally, nutrient-enrichment effects also increased with water temperature and light, and decreased under elevated ambient concentrations of inorganic N and/or P. Overall, increased concentrations of N and/or P altered multiple food-web pathways and trophic levels in lotic ecosystems. Finally, our results indicate that preservation or restoration of biodiversity and ecosystem functions of streams and rivers requires management of nutrient inputs and consideration of multiple trophic pathways.

59 BASIC BIOLOGICAL SCIENCES↗

Asymmetric response of Amazon forest water and energy fluxes to wet and dry hydrological extremes reveals onset of a local drought-induced tipping point

Understanding the effects of intensification of Amazon basin hydrological cycling—manifest as increasingly frequent floods and droughts—on water and energy cycles of tropical forests is essential to meeting the challenge of predicting ecosystem responses to climate change, including forest “tipping points”. Here, we investigated the impacts of hydrological extremes on forest function using 12+ years of observations (between 2001–2020) of water and energy fluxes from eddy covariance, along with associated ecological dynamics from biometry, at the Tapajós National Forest. Measurements encompass the strong 2015–2016 El Niño drought and La Niña 2008–2009 wet events. We found that the forest responded strongly to El Niño-Southern Oscillation (ENSO): Drought reduced water availability for evapotranspiration ( ET ) leading to large increases in sensible heat fluxes ( H ). Partitioning ET by an approach that assumes transpiration ( T ) is proportional to photosynthesis, we found that water stress-induced reductions in canopy conductance ( G s ) drove T declines partly compensated by higher evaporation ( E ). By contrast, the abnormally wet La Niña period gave higher T and lower E , with little change in seasonal ET . Both El Niño-Southern Oscillation (ENSO) events resulted in changes in forest structure, manifested as lower wet-season leaf area index. However, only during El Niño 2015–2016, we observed a breakdown in the strong meteorological control of transpiration fluxes (via energy availability and atmospheric demand) because of slowing vegetation functions (via shutdown of G s and significant leaf shedding). Drought-reduced T and G s , higher H and E , amplified by feedbacks with higher temperatures and vapor pressure deficits, signaled that forest function had crossed a threshold, from which it recovered slowly, with delay, post-drought. In conclusion, identifying such tipping point onsets (beyond which future irreversible processes may occur) at local scale is crucial for predicting basin-scale threshold-crossing changes in forest energy and water cycling, leading to slow-down in forest function, potentially resulting in Amazon forests shifting into alternate degraded states.

54 ENVIRONMENTAL SCIENCES↗

Askival: An altered feldspathic cumulate sample in Gale crater

Askival is a light-toned, coarsely crystalline float rock, which was identified near the base of Vera Rubin Ridge in Gale crater. We have studied Askival, principally with the ChemCam instrument but also using APXS compositional data and MAHLI images. Askival and an earlier identified sample, Bindi, represent two rare examples of feldspathic cumulate float rocks in Gale crater with >65% relict plagioclase. Bindi appears unaltered whereas Askival shows textural and compositional signatures of silicification, along with alkali remobilization and hydration. Askival likely experienced multiple stages of alteration, occurring first through acidic hydrolysis of metal cations, followed by deposition of silica and possible phyllosilicates at low T and neutral-alkaline pH. Through laser-induced breakdown spectroscopy compositional analyses and normative calculations, we suggest that an assemblage of Fe-Mg silicates including amphibole and pyroxene, Fe phases, and possibly Mg-rich phyllosilicate are present. Thermodynamic modeling of the more pristine Bindi composition predicts that amphibole and feldspar are stable within an upper crustal setting. This is consistent with the presence of amphibole in the parent igneous rocks of Askival and suggests that the paucity of amphiboles in other known Martian samples reflects the lack of representative samples of the Martian crust rather than their absence on Mars.

58 GEOSCIENCES↗

Disruption of starch biosynthesis and triacylglycerol degradation impairs growth but improves photosynthesis in Arabidopsis

Enhancing lipid accumulation by redirecting carbon from starch to triacylglycerol (TAG) in vegetative tissues is a promising strategy for developing high-energy-density crops for bioenergy production. However, our understanding of how starch and TAG metabolism interact and how this interaction affects growth and photosynthesis is incomplete. Here, we investigated the metabolic and physiological consequences of disrupting starch biosynthesis and TAG turnover in Arabidopsis thaliana by generating single, double, and triple mutants involving ADG1 (starch biosynthesis), TGD1 (lipid trafficking), and SDP1\\\\\\\\r\\\\\\\\n(TAG lipase). Unexpectedly, elimination of starch biosynthesis lowered TAG levels in the high-TAG-accumulating tgd1 mutant, primarily through enhanced TAG breakdown. This decline was completely reversed by sucrose supplementation, suggesting that TAG degradation was induced by carbon limitation.\\\\\\\\r\\\\\\\\nGenetic suppression of TAG turnover via SDP1 disruption in the starchless tgd1 adg1-1 background led to a nine-fold rise in leaf TAG accumulation in the tgd1 sdp1 adg1-1 triple mutant, together with enhanced photosynthetic performance. However, this metabolic reprogramming incurred growth penalties.\\\\\\\\r\\\\\\\\nOur results highlight the role of dynamic TAG turnover in maintaining metabolic balance and photosynthesis in starch-deficient backgrounds. These findings underscore the need for refined metabolic engineering strategies that coordinate TAG biosynthesis and degradation to optimize lipid accumulation in bioenergy crops.

59 BASIC BIOLOGICAL SCIENCES↗

Balancing Participation and Speed: A Polycentric Governance Lens on Renewable‐Energy Siting

Siting and permitting for renewable projects vary in process and authority structures. Such variation can create coordination challenges and inconsistent public participation processes. We develop a Governance Trade-Off Matrix to classify permitting processes by (1) authority structure (polycentric vs. monocentric) and (2) procedural extensiveness (minimal vs. extensive). The matrix shows when jurisdictional dispersion enables timely implementation and when it creates coordination breakdowns. We propose testable hypotheses on how governance design affects project timelines, conflict escalation, and local acceptance. Here, the framework highlights design levers, like single lead agencies, structured public involvement, and statutory shot clocks, to reconcile meaningful local input with urgent climate imperatives.

14 SOLAR ENERGY↗

Disruption of Brachypodium lichenase alters metabolism of mixed‐linkage glucan and starch

Mixed-linkage glucan, which is widely distributed in grasses, is a polysaccharide highly abundant in cell walls of grass endosperm and young vegetative tissues. Lichenases are enzymes that hydrolyze mixed-linkage glucan first identified in mixed-linkage glucan-rich lichens. In this study, we identify a gene encoding a lichenase we name Brachypodium distachyon LICHENASE 1 (BdLCH1), which is highly expressed in the endosperm of germinating seeds and coleoptiles and at lower amounts in mature shoots. RNA in situ hybridization showed that BdLCH1 is primarily expressed in chlorenchyma cells of mature leaves and internodes. Disruption of BdLCH1 resulted in an eight-fold increase in mixed-linkage glucan content in senesced leaves. Consistent with the in situ hybridization data, immunolocalization results showed that mixed-linkage glucan was not removed in chlorenchyma cells of lch1 mutants as it was in wild type and implicate the BdLCH1 enzyme in removing mixed-linkage glucan in chlorenchyma cells in mature vegetative tissues. We also show that mixed-linkage glucan accumulation in lch1 mutants was resistant to dark-induced degradation, and 8-week-old lch1 plants showed a faster rate of starch breakdown than wild type in darkness. Here our results suggest a role for BdLCH1 in modifying the cell wall to support highly metabolically active cells.

59 BASIC BIOLOGICAL SCIENCES↗

Microstructural Evolution During a Solid State Tube Pinch Weld of Type 304l Stainless Steel

Microstructure development is examined for a specialized spot weld that is used as a solid-state closure process for austenitic stainless steel tubing, referred to as pinch welding. In order to elucidate the microstructural evolution of the weld, a series of test welds were made at nominal conditions using tubing and production like components. These pinch welds normally terminate after twelve cycles of a 60 Hz AC weld process. In this study, production tubes were welded from one to twelve cycles and the microstructure and weld variables after each individual weld cycle number were characterized using radiography and optical metallography. Two electrochemical etchants were used to highlight different microstructural features. The study revealed that: (1) this type pinch weld is largely complete after about six cycles of 60 Hz AC current, half the weld time utilized; (2) the resistance, deformation, and closure length approach “steady-state” conditions after six cycles; and (3) both oxalic and nitric acid electrolytic etchants are useful for highlighting specific microstructural attributes of type 304 L stainless steel. Finally, two distinct microstructural regions can be identified for these welds: the edge of the weld, which is driven by concentrated deformation, recrystallization, and grain growth, and the center region, which is more typical of forge welding and micro-asperity breakdown followed by diffusion and grain-growth.

36 MATERIALS SCIENCE↗