Engineering Papers⌕ Search

SEARCH · Engineering Papers

Results for “Switch”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 1,675 records · Page 93

Switching interlayer magnetic order in bilayer CrI 3 by stacking reversal

CrI 3 , a hot two-dimensional (2D) magnet, exhibits complex magnetism depending on the number of layers and interlayer stacking patterns. For bilayer CrI 3 , the interlayer magnetism can be tuned between ferromagnetic (FM) and antiferromagnetic (AFM) order by manipulating the stacking order. However, the stacking is mostly modified through translation between the layers, while the effect of rotation between the layers on the interlayer magnetic order has not yet been fully investigated. Here, we considered three energetically stable stacking patterns R$\bar3$ with combining macron], C2/m and AA in bilayer CrI 3 , and their reversed counterparts R$\bar3$ with combining macron]-r, C2/m-r and AA-r through rotating one layer by 180° with respect to the other layer. Our first-principles calculations suggest that the interlayer magnetic ground state can be switched from AFM to FM (or FM to AFM) by reversing the stacking pattern. A detailed microscopic analysis was carried out by magnetic force theory calculations on C2/m stacking which favors AFM and C2/m-r stacking which favors FM. The interlayer magnetic interactions and the origin of the magnetic order change were revealed through specific orbital analysis. Our work demonstrates that stacking rotation can also tune the interlayer magnetism of CrI 3 and provides insight into its interlayer magnetic properties at the microscopic level.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

Local microenvironment tuning induces switching between electrochemical CO 2 reduction pathways

Gas diffusion layers (GDL) have become a critical component in electrochemical CO 2 reduction (CO 2 R) systems because they can enable high current densities needed for industrially relevant productivity. Besides this function, it is often assumed that the choice of catalyst and electrolyte play much more important roles than the GDL in influencing the observed product selectivity. Here, we show that tuning of the GDL pore size can be used to control the local microenvironment of the catalyst and hence, effect significant changes in catalytic outcomes. This concept is demonstrated using sputtered Ag films on hydrophobic PTFE substrates with 6 different pore sizes. Although Ag is known to be a predominantly CO generating catalyst, we find that smaller pore sizes favor the generation of formate up to a faradaic efficiency of 43%. Combined experimental and simulation results show that this is due to the influence of the pore size on CO 2 mass transport, which alters the local pH at the electrode, resulting in reaction pathway switching between CO and formate. Importantly, our results highlight the importance of the local microenvironment as an experimental knob that can be rationally tuned for controlling product selectivity: a key consideration in the design of CO 2 R systems.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

An RC snubber design method to achieve optimized switching noise‐loss trade‐off of cascode GaN HEMTs

Abstract The cascode gallium nitride high electron mobility transistors (GaN HEMTs) are very vulnerable to self‐sustained turn‐off oscillation due to their cascode configuration. This paper presents a design approach for the RC snubber of cascode GaN HEMTs to achieve the optimized noise‐loss trade‐off. At first, an analytical model is proposed to describe the instability of cascode GaN HEMTs‐based test circuits utilizing RC snubber. Based on the model, an analytical approach is proposed to achieve two optimum RC snubber designs S1 and S2. The design S1 can satisfactorily dampen the oscillation with minimum switching losses. The design S2 achieves maximum effective damping on the oscillation at a minimized cost of additional power losses. In the end, the accuracy of the proposed model is validated by the double‐pulse test and good agreement is obtained.

Xue, Peng↗

Quasi-two-dimensional conducting layer on TiO{sub 2} (110) introduced by sputtering as a template for resistive switching

The insulator-to-metal transformation in the surface layer of TiO{sub 2} (110) induced by the Ar{sup +} ion sputtering process is analyzed on the nanoscale. Local conductivity atomic force microscopy and photoelectron spectroscopy allow the changes in the valence of the Ti ions in the surface layer to be linked to the formation of its grain-like structure. The investigation of the cleavage plane of the crystal allowed us to estimate the thickness of the quasi-two-dimensional conducting layer generated by ion bombardment as 30 nm. The conducting layer is a template where the resistive switching of each single grain can be carried out.

36 MATERIALS SCIENCE↗

Creation of a two-dimensional electron gas and conductivity switching of nanowires at the LaAlO{sub 3}/SrTiO{sub 3} interface grown by 90{sup o} off-axis sputtering

Two-dimensional electron gas (2DEG) formed at the interface between two oxide band-insulators LaAlO{sub 3} and SrTiO{sub 3} raises the possibility to develop oxide nanoelectronics. Here, we report the creation of a 2DEG at the LaAlO{sub 3}/SrTiO{sub 3} heterointerfaces grown by 90° off-axis sputtering which allows uniform films over a large area. The electrical transport properties of the LaAlO{sub 3}/SrTiO{sub 3} heterointerface are similar to those grown by pulsed laser deposition. We also demonstrate room-temperature conductive probe-based switching of quasi-one-dimensional structures. This work demonstrates that a scalable growth process can be used to create the two-dimensional electron gas system at oxide heterointerfaces.

36 MATERIALS SCIENCE↗

Damage threshold and focusability of mid-infrared free-electron laser pulses gated by a plasma mirror with nanosecond switching pulses

The presence of a pulse train structure of an oscillator-type free-electron laser (FEL) results in the immediate damage of a solid target upon focusing. We demonstrate that the laser-induced damage threshold can be significantly improved by gating the mid-infrared FEL pulses with a plasma mirror. Although the switching pulses we employ have a nanosecond duration which does not guarantee the clean wavefront of the gated FEL pulses, the high focusability is experimentally confirmed through the observation of spectral broadening by a factor of 2.1 when we tightly focus the gated FEL pulses onto the Ge plate.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Generalized Stoner-Wohlfarth model accurately describing the switching processes in pseudo-single ferromagnetic particles

We propose a generalized Stoner-Wohlfarth (SW) type model to describe various experimentally observed angular dependencies of the switching field in non-single-domain magnetic particles. Because the nonuniform magnetic states are generally characterized by complicated spin configurations with no simple analytical description, we maintain the macrospin hypothesis and we phenomenologically include the effects of nonuniformities only in the anisotropy energy, preserving as much as possible the elegance of SW model, the concept of critical curve and its geometric interpretation. We compare the results obtained with our model with full micromagnetic simulations in order to evaluate the performance and limits of our approach.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Polarization dependent color switching by extra-ordinary transmission in H-slit plasmonic metasurface

An array of H-shaped subwavelength slits in a plasmonic film has a polarization dependent extra-ordinary transmission due to shape anisotropy. Non-overlapping extra-ordinary transmission bands for the orthogonal linear polarization states of the input light are used to demonstrate a polarization dependent color switch. The fabricated array of submicron sized H-slits on a gold film displayed two transmission bands for the linear x- and y-polarized light at visible (650–850 nm) and near-infra-red (1150–1450 nm) bands, respectively. The relative transmitted light in these two bands can be controlled by changing the linear polarization state of the input radiation from 0° to 90°.

36 MATERIALS SCIENCE↗

Size dependence of magnetic switching in perpendicularly magnetized MgO/Co/Pt pillars close to the spin reorientation transition

We investigated the magnetic switching of MgO/Co/Pt pillars with perpendicular magnetic anisotropy, for lateral pillar sizes from 30 nm to 2 μm and for Co layer thicknesses between 1.8 and 2.6 nm. For large pillars, both the coercivity and the remanent magnetization decrease for increasing Co thickness. For all Co thicknesses, the coercivity strongly increases upon decreasing the pillar size. A comparison with micromagnetic simulations shows that the change in coercivity is determined by size-dependent demagnetizing effects. Our results show that small pillars with perpendicular magnetization and a tunable coercivity can be fabricated from continuous layers with in-plane magnetization.

36 MATERIALS SCIENCE↗

Adjustable, rapidly switching microfluidic gradient generation using focused travelling surface acoustic waves

We demonstrate a simple device to generate chemical concentration gradients in a microfluidic channel using focused travelling surface acoustic waves (F-TSAW). A pair of curved interdigitated metal electrodes deposited on the surface of a piezoelectric (LiNbO{sub 3}) substrate disseminate high frequency sound waves when actuated by an alternating current source. The F-TSAW produces chaotic acoustic streaming flow upon its interaction with the fluid inside a microfluidic channel, which mixes confluent streams of chemicals in a controlled fashion for an adjustable and rapidly switching gradient generation.

36 MATERIALS SCIENCE↗

Percolation network in resistive switching devices with the structure of silver/amorphous silicon/p-type silicon

Conducting pathway of percolation network was identified in resistive switching devices (RSDs) with the structure of silver/amorphous silicon/p-type silicon (Ag/a-Si/p-Si) based on its gradual RESET-process and the stochastic complex impedance spectroscopy characteristics (CIS). The formation of the percolation network is attributed to amounts of nanocrystalline Si particles as well as defect sites embedded in a-Si layer, in which the defect sites supply positions for Ag ions to nucleate and grow. The similar percolation network has been only observed in Ag-Ge-Se based RSD before. This report provides a better understanding for electric properties of RSD based on the percolation network.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Dipolar field effects on the critical current for spin transfer switch of iron and permalloy nanoelements

We report a theoretical study of dipolar effects on the switching current density of soft ferromagnetic elliptical nanoelements. Relevant changes on the critical current value are found according to the orientation of the magnetization and the spin polarization with the major axis. We show that the critical current density may be reduced by as much as 92% for thin nanoelements magnetized along the minor axis direction, using in-plane spin polarization parallel to the magnetization.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Effect of chemical substitutions on photo-switching properties of 3-hydroxy-picolinic acid studied by ab initio methods

Effect of chemical substitutions to the molecular structure of 3-hydroxy-picolinic acid on photo-switching properties of the system operating on excited-state intramolecular double proton transfer (d-ESIPT) process [M. F. Rode and A. L. Sobolewski, Chem. Phys. 409, 41 (2012)] was studied with the aid of electronic structure theory methods. It was shown that simultaneous application of electron-donating and electron-withdrawing substitutions at certain positions of the molecular frame increases the height of the S{sub 0}-state tautomerization barrier (ensuring thermal stability of isomers) and facilitates a barrierless access to the S{sub 1}/S{sub 0} conical intersection from the Franck-Condon region of the S{sub 1} potential-energy surface. Results of study point to the conclusion that the most challenging issue for practical design of a fast molecular photoswitch based on d-ESIPT phenomenon are to ensure a selectivity of optical excitation of a given tautomeric form of the system.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

The formation of iron aluminides on aluminum surface by using a Q-switched Nd:YAG laser

The formation and growth of Fe based aluminum diffusion layers at the Fe-Al interface have been investigated to improve the surface hardness. The diffusion of Fe into Al has been accomplished by focusing a Q-switched Nd:YAG laser on the modified surface. The variety of the layer depth is achieved based on the type of heating and quenching media. Microstructural characterization and mechanical properties of the modified surface were carried out via gas discharge spectrometer GDS, X-Ray diffraction (XRD), Scanning electron microscope (SEM), and Vickers Hardness tester. The results indicate that hardness at the interface of Fe-Al layer is increased. The optimum hardness achieved as 93 HV at corresponding critical energy density of 438 Jcm{sup −2}.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗