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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 1,675 records · Page 93
All sourcesNASA NTRSDOE OSTI
NASA NTRS1998

Evaluation of Radiation Effects in Flash Memories

Features of flash memories: Flash memories are non-volatile; that is they do not require power to retain the information in its memory. They can be erased and written to while the device is still in the circuit.

Radiation effects↗
NASA NTRS1995

Impact of CMOS Scaling on Single-Event Hard Errors in Space Systems

Applications of highly scaled devices in space applications are shown to be limited by hard errors from cosmic rays. Hard errors were first observed in 0.8 (micro)m DRAMs. For feature sizes below 0.5 (micro)m, scaling theory predicts that low power devices will have much lower hard error rates than devices optimized for high speed.

CMOS Scaling↗
NASA NTRS1995

Radiation Evaluation of an Advanced 64Mb 3.3V DRAM and Insights into the Effects of Scaling on Radiation Hardness

In this paper, total ionizing dose radiation evaluations of the Micron 64 Mb 3.3 V, fast page mode DRAM and the IBM LUNA-ES 16 Mb DRAM are presented. The effects of scaling on total ionizing dose radiation hardness are studied utilizing test structures and a series of 16 Mb DRAMs with different feature sizes from the same manufacturing line. General agreement was found between the threshold voltage shifts of 16 Mb DRAM test structures and the threshold voltage measured on complete circuits using retention time measurements. Retention time measurement data from early radiation doses are shown that allow internal failure modes to be distinguished.

Radiation Hardness↗
NASA NTRS2002

Dosimetry and microdosimetry using COTS ICs: A comparative study

A new method using an array of MOS transistors formeasuring dose absorbed from ionizing radiation is compared to previous dosimetric methods., The accuracy and precision of dosimetry based on COTS SRAMs, DRAMs, and WPROMs are compared and contrasted. Applications of these devices in various space missions will be discussed. TID results are presented for this summary and microdosimetricresults will be added to the full paper. Finally, an analysis of the optimal condition for a digital dosimeter will be presented.

microdosimetry↗
NASA NTRS2002

Single event upset suspectibility testing of the Xilinx Virtex II FPGA

Heavy ion testing of the Xilinx Virtex II was conducted on the configuration, block RAM and user flip flop cells to determine their static single-event upset susceptibility using LETs of 1.2 to 60 MeVcm^2/mg. A software program specifically designed to count errors in the FPGA was used to reveal L1/e, values (the LET at which the cross section is l/e times the saturation cross-section) and single-event functional-interrupt failures.

FPGA Virtex II SEU↗
NASA NTRS2006

Single Event Effects Test Results for the Actel ProASIC Plus and Altera Stratix-II Field Programmable Gate Arrays

This work describes radiation testing of Actel's ProASIC Plus and Altera's Stratix-II FPGAs. The Actel Device Under Test (DUT) was a ProASIC Plus APA300-PQ208 nonvolatile, field reprogrammable device which is based on a 0.22micron flash-based LVCMOS technology. Limited investigation has taken place into flash based FPGA technologies, therefore this test served as a preliminary reference point for various SEE behaviors. The Altera DUT was a Stratix-II EP2S60F1020C4. Single Event Upset (SEU) and Single Event Latchup (SEL) were the focus of these studies. For the Actel, a latchup test was done at an effective LET of 75.0 MeV-sq cm/mg at room temperature, and no latchup was detected when irradiated to a total fluence of 1 x 10(exp 7) particles/sq cm. The Altera part was shown to latchup at room temperature.

heavy ions↗
NASA NTRS2006

Upset Characterization of the PowerPC405 Hard-core Processor Embedded in Virtex-II Pro Field Programmable Gate Arrays

Shown in this presentation are recent results for the upset susceptibility of the various types of memory elements in the embedded PowerPC405 in the Xilinx V2P40 FPGA. For critical flight designs where configuration upsets are mitigated effectively through appropriate design triplication and configuration scrubbing, these upsets of processor elements can dominate the system error rate. Data from irradiations with both protons and heavy ions are given and compared using available models.

radiation effects↗
NASA NTRS2004

Frequency Dependence of Single-event Upset in Advanced Commerical PowerPC Microprocessors

This paper examines single-event upsets in advanced commercial SOI microprocessors in a dynamic mode, studying SEU sensitivity of General Purpose Registers (GPRs) with clock frequency. Results are presented for SOI processors with feature sizes of 0.18 microns and two different core voltages. Single-event upset from heavy ions is measured for advanced commercial microprocessors in a dynamic mode with clock frequency up to 1GHz. Frequency and core voltage dependence of single-event upsets in registers is discussed.

single-event upset (SEU)↗
NASA NTRS2007

Algorithms for Lunar Flash Video Search, Measurement, and Archiving

Lunar meteoroid impact flashes provide a method to estimate the flux of the large meteoroid flux and thus their hazard to spacecraft. Although meteoroid impacts on the Moon have been detected using video methods for over a decade, the difficulty of manually searching hours of video for the rare, extremely brief impact flashes has discouraged the technique's systematic implementation. A prototype has been developed for the purpose of automatically searching Lunar video records for impact flashes, eliminating false detections, editing the returned possible flashes, and archiving and documenting the results. The theory and organization of the program is discussed with emphasis on the filtering out of several classes of false detections and retaining the brief portions of the raw video necessary for in depth analysis of the flashes detected. Several utilities for measurement, analysis, and location of the flashes on the moon included in the program are demonstrated. Application of the program to a year's worth of Lunar observations is discussed along with examples of impact flashes as well as several classes of false impact flashes.

Swift, Wesley↗
NASA NTRS2007

NASA's Lunar Impact Monitoring Program

NASA's Meteoroid Environment Office nas implemented a program to monitor the Moon for meteoroid impacts from the Marshall Space Flight Center. Using off-the-shelf telescopes and video equipment, the moon is monitored for as many as 10 nights per month, depending on weather. Custom software automatically detects flashes which are confirmed by a second telescope, photometrically calibrated using background stars, and published on a website for correlation with other observations, Hypervelocity impact tests at the Ames Vertical Gun Facility have been performed to determine the luminous efficiency ana ejecta characteristics. The purpose of this research is to define the impact ejecta environment for use by lunar spacecraft designers of the Constellation (manned lunar) Program. The observational techniques and preliminary results will be discussed.

Suggs, Robert M.↗