Engineering Papers⌕ Search

SEARCH · Engineering Papers

Results for “GaTe”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 1,675 records · Page 93
All sourcesNASA NTRSDOE OSTI
NASA NTRS1990

Advanced modulation technology development for earth station demodulator applications. Coded modulation system development

A jointly optimized coded modulation system is described which was designed, built, and tested by COMSAT Laboratories for NASA LeRC which provides a bandwidth efficiency of 2 bits/s/Hz at an information rate of 160 Mbit/s. A high speed rate 8/9 encoder with a Viterbi decoder and an Octal PSK modem are used to achieve this. The BER performance is approximately 1 dB from the theoretically calculated value for this system at a BER of 5 E-7 under nominal conditions. The system operates in burst mode for downlink applications and tests have demonstrated very little degradation in performance with frequency and level offset. Unique word miss rate measurements were conducted which demonstrate reliable acquisition at low values of Eb/No. Codec self tests have verified the performance of this subsystem in a stand alone mode. The codec is capable of operation at a 200 Mbit/s information rate as demonstrated using a codec test set which introduces noise digitally. The measured performance is within 0.2 dB of the computer simulated predictions. A gate array implementation of the most time critical element of the high speed Viterbi decoder was completed. This gate array add-compare-select chip significantly reduces the power consumption and improves the manufacturability of the decoder. This chip has general application in the implementation of high speed Viterbi decoders.

Miller, Susan P.↗
NASA NTRS1989

Product assurance technology for procuring reliable, radiation-hard, custom LSI/VLSI electronics

Advanced measurement methods using microelectronic test chips are described. These chips are intended to be used in acquiring the data needed to qualify Application Specific Integrated Circuits (ASIC's) for space use. Efforts were focused on developing the technology for obtaining custom IC's from CMOS/bulk silicon foundries. A series of test chips were developed: a parametric test strip, a fault chip, a set of reliability chips, and the CRRES (Combined Release and Radiation Effects Satellite) chip, a test circuit for monitoring space radiation effects. The technical accomplishments of the effort include: (1) development of a fault chip that contains a set of test structures used to evaluate the density of various process-induced defects; (2) development of new test structures and testing techniques for measuring gate-oxide capacitance, gate-overlap capacitance, and propagation delay; (3) development of a set of reliability chips that are used to evaluate failure mechanisms in CMOS/bulk: interconnect and contact electromigration and time-dependent dielectric breakdown; (4) development of MOSFET parameter extraction procedures for evaluating subthreshold characteristics; (5) evaluation of test chips and test strips on the second CRRES wafer run; (6) two dedicated fabrication runs for the CRRES chip flight parts; and (7) publication of two papers: one on the split-cross bridge resistor and another on asymmetrical SRAM (static random access memory) cells for single-event upset analysis.

Buehler, M. G.↗
NASA NTRS1990

Estimation of multidimensional precipitation parameters by areal estimates of oceanic rainfall

The parameters of the multidimensional precipitation model proposed by Waymire et al. (1984) are estimated using the areal-averaged radar measurements of precipitation of the Global Atlantic Tropical Experiment (GATE) data set. The procedure followed was the fitting of the first- and second-order moments at different aggregation scales by nonlinear regression techniques. The numerical estimates of the parameters using different subsets of GATE information were reasonably stable, i.e., they were not affected by changes of the area-averaging size, temporal length of the records, and percentage of areal coverage of rainfall. This suggests that the estimation procedure is relatively robust and suitable to estimate the parameters of the multidimensional model in areas of sparse density of rain gages. The use of the space-time spectrum of rainfall to help in the determination of sampling errors due to intermittent visits of future space-borne low-altitude sensors of precipitation is also discussed.

Valdes, J. B.↗
NASA NTRS1990

Sampling errors for satellite-derived tropical rainfall - Monte Carlo study using a space-time stochastic model

Estimates of monthly average rainfall based on satellite observations from a low earth orbit will differ from the true monthly average because the satellite observes a given area only intermittently. This sampling error inherent in satellite monitoring of rainfall would occur even if the satellite instruments could measure rainfall perfectly. The size of this error is estimated for a satellite system being studied at NASA, the Tropical Rainfall Measuring Mission (TRMM). First, the statistical description of rainfall on scales from 1 to 1000 km is examined in detail, based on rainfall data from the Global Atmospheric Research Project Atlantic Tropical Experiment (GATE). A TRMM-like satellite is flown over a two-dimensional time-evolving simulation of rainfall using a stochastic model with statistics tuned to agree with GATE statistics. The distribution of sampling errors found from many months of simulated observations is found to be nearly normal, even though the distribution of area-averaged rainfall is far from normal. For a range of orbits likely to be employed in TRMM, sampling error is found to be less than 10 percent of the mean for rainfall averaged over a 500 x 500 sq km area.

Bell, Thomas L.↗
NASA NTRS1990

Analysis of exhaustive limited service for token ring networks

Token ring operation is well-understood in the cases of exhaustive, gated, gated limited, and ordinary cyclic service. There is no current data, however, on queueing models for the exhaustive limited service type. This service type differs from the others in that there is a preset maximum (omega) on the number of packets which may be transmitted per token reception, and packets which arrive after token reception may still be transmitted if the preset packet limit has not been reached. Exhaustive limited service is important since it closely approximates a timed token service discipline (the approximation becomes exact if packet lengths are constant). A method for deriving the z-transforms of the distributions of the number of packets present at both token departure and token arrival for a system using exhaustive limited service is presented. This allows for the derivation of a formula for mean queueing delay and queue lengths. The method is theoretically applicable to any omega. Fortunately, as the value of omega becomes large (typically values on the order of omega = 8 are considered large), the exhaustive limited service discipline closely approximates an exhaustive service discipline.

Peden, Jeffery H.↗
NASA NTRS1990

Fault trees and sequence dependencies

One of the frequently cited shortcomings of fault-tree models, their inability to model so-called sequence dependencies, is discussed. Several sources of such sequence dependencies are discussed, and new fault-tree gates to capture this behavior are defined. These complex behaviors can be included in present fault-tree models because they utilize a Markov solution. The utility of the new gates is demonstrated by presenting several models of the fault-tolerant parallel processor, which include both hot and cold spares.

Dugan, Joanne Bechta↗
NASA NTRS1990

A graphical language for reliability model generation

A graphical interface capability of the hybrid automated reliability predictor (HARP) is described. The graphics-oriented (GO) module provides the user with a graphical language for modeling system failure modes through the selection of various fault tree gates, including sequence dependency gates, or by a Markov chain. With this graphical input language, a fault tree becomes a convenient notation for describing a system. In accounting for any sequence dependencies, HARP converts the fault-tree notation to a complex stochastic process that is reduced to a Markov chain which it can then solve for system reliability. The graphics capability is available for use on an IBM-compatible PC, a Sun, and a VAX workstation. The GO module is written in the C programming language and uses the Graphical Kernel System (GKS) standard for graphics implementation. The PC, VAX, and Sun versions of the HARP GO module are currently in beta-testing.

Howell, Sandra V.↗
NASA NTRS1991

Stripe stabilization in vertical Bloch line memory

Long, partial rectangular grooves have been made to reside below the stripe-confinement groove on a garnet surface, in order to stabilize minor loop stripes in a vertical Bloch-line memory. The test chip contained, in addition to either 10 or 20 minor-loop grooves, 10 read/write gate grooves and a major line groove; both 10 and 20 micron groove periods were tested. As the bias field was gradually decreased, bubbles began to stripe out. These stripes were stable at bias fields in the 70-80 Oe range. When stripes escaped from the groove, the even occurred from the end which does not face a read/write gate groove.

Wu, J. C.↗
NASA NTRS1992

Graphical workstation capability for reliability modeling

In addition to computational capabilities, software tools for estimating the reliability of fault-tolerant digital computer systems must also provide a means of interfacing with the user. Described here is the new graphical interface capability of the hybrid automated reliability predictor (HARP), a software package that implements advanced reliability modeling techniques. The graphics oriented (GO) module provides the user with a graphical language for modeling system failure modes through the selection of various fault-tree gates, including sequence-dependency gates, or by a Markov chain. By using this graphical input language, a fault tree becomes a convenient notation for describing a system. In accounting for any sequence dependencies, HARP converts the fault-tree notation to a complex stochastic process that is reduced to a Markov chain, which it can then solve for system reliability. The graphics capability is available for use on an IBM-compatible PC, a Sun, and a VAX workstation. The GO module is written in the C programming language and uses the graphical kernal system (GKS) standard for graphics implementation. The PC, VAX, and Sun versions of the HARP GO module are currently in beta-testing stages.

Bavuso, Salvatore J.↗
NASA NTRS1991

Chemical evaluation of non-woven nylon separators used in Ni/Cd cells

The goals of the chemical analysis was to identify Gates 2505 degradation mechanism, to determine if Eagle-Pitcher 2505 supply suitable for flight, and to assess the 2538 as a candidate replacement, based on chemical findings. Chemical testing strongly indicates that the Gates 2505 stored in Florida had undergone partial chemical deterioration, believed caused by exposure to high humidities and temperature. A suspected role of zinc chloride as a separator concern during storage was not verified in this study (the effect of ZnCl2 on cell/electrode performance was not addressed). No substantial chemical issues or concerns with using EP 2505 as Ni/Cd battery separator for Mars Observer and TOPEX could be found. No chemical issues or concerns with using 2538 as Ni/Cd battery separator were found, in fact, chemical evidence suggest that 2538 may be a better material, as compared to 2505.

Cuddihy, Edward F.↗
NASA NTRS1992

Microwave properties of peeled HEMT devices sapphire substrates

The focus of this research is to demonstrate the first full radio frequency characterization of high electron mobility transistor (HEMT) device parameters. The results of this research are used in the design of circuits with peeled HEMT devices, e.g. 10 GHz amplifiers. Devices were fabricated using two HEMT structures grown by molecular beam epitaxy methods. A 500 A AlAs release layer for 'peel off' was included under the active layers of the structure. The structures are a homogeneously doped Al(0.3)GA(0.7)As/GaAs and a delta doped square well Al(.23)Ga(.77)As/GaAs HEMT structure. Devices were fabricated using a mesa isolation process. Contacts were done by sequentially evaporating Au/Ge/Au/Ni/Au followed by rapid thermal anneal at 400 C for 15 seconds. Gates were wet etch recessed and 1 to 1.4 micron Ti/Au gate metal was deposited. Devices were peeled off the GaAs substrate using Apiezon wax to support the active layer and a HF:DI (1:10) solution to remove the AlAs separation layer. Devices were then attached to sapphire substrates using van der Waals bonding.

Young, Paul G.↗
NASA NTRS1992

Silicon device performance measurements to support temperature range enhancement

Testing of the metal oxide semiconductor (MOS)-controlled thyristor (MCT) has uncovered a failure mechanism at elevated temperature. The failure appears to be due to breakdown of the gate oxide. Further testing is underway to verify the failure mode. Higher current level inverters were built to demonstrate 200 C operation of the N-MOSFET's and insulated-gate-bipolar transistors (IGBT's) and for life testing. One MOSFET failed early in testing. The origin of this failure is being studied. No IGBT's have failed. A prototype 28-to-42 V converter was built and is being tested at room temperature. The control loop is being finalized. Temperature stable, high value (10 micro-F) capacitors appear to be the limiting factor in the design at this time. In this application, the efficiency will be lower for the IGBT version due to the large V sub(cesat) (3.5-4 V) compared to the input voltage of 28 V. The MOSFET version should have higher efficiency; however, the MOSFET does not appear to be as robust at 200 C. Both versions are built for comparison.

Bromstead, James↗
NASA NTRS1993

Development of first generation aerospace NiMH cells

Gates Aerospace Batteries in conjunction with Gates Energy Products (GEP) has been developing NiMH technology for aerospace use since 1990. GEP undertook the development of NiMH technology for commercial cell applications in 1987. This program focused on wound cell technology for replacement of current NiCd technology. As an off shoot of this program small, wound cells were used to evaluate initial design options for aerospace prismatic cell designs. Early in 1991, the first aerospace prismatic cell designs were built in a 6 Ah cell configuration. These cells were used to initially characterize performance in prismatic configurations and begin early life cycle testing. Soon after the 6 Ah cells were on test, several 22 Ah cells were built to test other options. The results of testing of these cells were used to identify potential problem areas for long lived cells and develop solutions to those problems. Following these two cell builds, a set of 7 Ah cells was built to evaluate improvements to the technology. To date results from these tests are very promising. Cycle lives in excess of 2,200 LEO cycles at 50 percent DoD were achieved with cells continuing on test. Results from these cell tests are discussed and data presented to demonstrate feasibility of this technology for aerospace programs.

Tinker, Lawrence↗
NASA NTRS1993

GaAs-based optoelectronic neurons

An integrated, optoelectronic, variable thresholding neuron implemented monolithically in GaAs integrated circuit and exhibiting high differential optical gain and low power consumption is presented. Two alternative embodiments each comprise an LED monolithically integrated with a detector and two transistors. One of the transistors is responsive to a bias voltage applied to its gate for varying the threshold of the neuron. One embodiment is implemented as an LED monolithically integrated with a double heterojunction bipolar phototransistor (detector) and two metal semiconductor field effect transistors (MESFET's) on a single GaAs substrate and another embodiment is implemented as an LED monolithically integrated with three MESFET's (one of which is an optical FET detector) on a single GaAs substrate. The first noted embodiment exhibits a differential optical gain of 6 and an optical switching energy of 10 pJ. The second embodiment has a differential optical gain of 80 and an optical switching energy of 38 pJ. Power consumption is 2.4 and 1.8 mW, respectively. Input 'light' power needed to turn on the LED is 2 micro-W and 54 nW, respectively. In both embodiments the detector is in series with a biasing MESFET and saturates the other MESFET upon detecting light above a threshold level. The saturated MESFET turns on the LED. Voltage applied to the biasing MESFET gate controls the threshold.

Lin, Steven H.↗
NASA NTRS1992

A study of subterahertz HEMT monolithic oscillators

A detailed study of monolithic InP-based HEMT oscillators for subterahertz operation is presented. InAlAs/InGaAs HEMT's have been optimized for high frequency operation and showed very high maximum oscillation frequencies (f(sub max)) of 310 GHz using offset self-aligned gamma-gate technology. Power characteristics of HEMT oscillators are reported. An oscillation power of more than 10 mW was evaluated by large-signal analysis at 320 GHz using HEMT's with f(sub max) = 450 GHz, V(sub br) = 10 V and a gate width (W(sub g)) of 8 x 22.5 microns. Oscillator topology studies showed that complex feedback schemes such as dual and active feedback enhance the negative resistance. Push-push oscillator designs based on harmonic signal generation can finally be used to overcome the frequency barrier imposed by f(sub max).

Kwon, Youngwoo↗
NASA NTRS1993

Optimal thresholds for the estimation of area rain-rate moments by the threshold method

Optimization of the threshold method, achieved by determination of the threshold that maximizes the correlation between an area-average rain-rate moment and the area coverage of rain rates exceeding the threshold, is demonstrated empirically and theoretically. Empirical results for a sequence of GATE radar snapshots show optimal thresholds of 5 and 27 mm/h for the first and second moments, respectively. Theoretical optimization of the threshold method by the maximum-likelihood approach of Kedem and Pavlopoulos (1991) predicts optimal thresholds near 5 and 26 mm/h for lognormally distributed rain rates with GATE-like parameters. The agreement between theory and observations suggests that the optimal threshold can be understood as arising due to sampling variations, from snapshot to snapshot, of a parent rain-rate distribution. Optimal thresholds for gamma and inverse Gaussian distributions are also derived and compared.

Short, David A.↗
NASA NTRS1992

Observation of radiation induced changes in stress and electrical properties in MOS devices

Strain measurements using X-ray diffraction were performed on irradiated commercial and radiation-hardened metal gate CMOS devices in addition to polysilicon gate NMOS devices. I-V curves were taken and V(ot) and V(it) were separated using the subthreshold slope method for all devices. A correlation has been shown to exist between physical strain relaxation and the electrical properties as a function of radiation dose and recovery. Data shown suggest that the physical response (strain relaxation) in the silicon at the oxide interface is a measure of the type of damage induced and the recovery mechanism. Postradiation measurements of Delta V(it) and Delta V(ot) taken immediately after irradiation support the conclusions of V. Zekeriya and T.-P. Ma (1983) and K. Kasama et al. (1986, 1987); compressive stress at the silicon/SiO2 interface does reduce radiation damage in the device.

Shaw, D. C.↗
NASA NTRS1991

A potential method for the estimation of drop size distribution from a dual-wavelength airborne radar

In order to investigate the role of the drop size distribution (DSD) from a dual-wavelength airborne radar and to recover profiled rain rates, a procedure is described for the purpose of estimating the DSD. The method differs from previous approaches in that it provides 2n + 1 parameters of the profiled DSD (where n is the number of range gates) and it uses a recursive procedure beginning at the range gate near the surface progressing backwards toward the storm top. The method is argued to be useful both as a diagnostic tool and as a means by which more detailed information on the vertical structure of the precipitation can be obtained.

Meneghini, R.↗