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Light-Mediated Contact Printing of Phosphorus Species onto Silicon Using Carbene-Based Molecular Layers
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Covalent Ag-C Bonding Contacts from Unprotected Terminal Acetylenes for Molecular Junctions
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Band Bending and Ratcheting Explain Triboelectricity in a Flexoelectric Contact Diode
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Bi–MoSe 2 Contacts in the Ultraclean Limit: Closing the Theory–Experiment Loop
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Improving Low-Bandgap Tin–Lead Perovskite Solar Cells via Contact Engineering and Gas Quench Processing
Low-bandgap Sn/Pb ABX 3 perovskites have reached photovoltaic power conversion efficiencies >20%, but they usually have poor stability due to the common use of acidic poly(3,4-ethylenedioxythiophene):polystyrenesulfonate (PEDOT:PSS) hole transport layers and A-site cation compositions containing methylammonium (MA). In this work, we develop a process to enable high-quality MA-free Sn/Pb perovskite films grown using a gas quenching process instead of the conventional antisolvents, which provides improved control of the film growth and eliminates wrinkling. Using this method in a device structure with poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] (PTAA) instead of PEDOT:PSS as the hole transport layer, devices can reach efficiencies up to 20% mppt at 0.06 cm 2 and up to 17.5% mppt at 1 cm 2 active area. With these improvements, the devices are characterized for thermal stability and show 80% of the initial power output remaining after 4000 h at 85 °C.
Electrochemical Screening of Contact Layers for Metal Halide Perovskites
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Contact-Based Passive Thermal Switch with a High Rectification Ratio
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Electronic Structure and Stacking Arrangement of Tungsten Disulfide at the Gold Contact
There is an intensive effort to control the nature of attractive interactions between ultrathin semiconductors and metals and to understand its impact on the electronic properties at the junction. In this work, we present a photoelectron spectroscopy study on the interface between WS 2 films and gold, with a focus on the occupied electronic states near the Brillouin zone center (i.e., the Γ point). To delineate the spectra of WS 2 supported on crystalline Au from the suspended WS 2 , we employ a microscopy approach and a tailored sample structure, in which the WS 2 /Au junction forms a semi-epitaxial relationship and is adjacent to suspended WS 2 regions. The photoelectron spectra, as a function of WS 2 thickness, display the expected splitting of the highest occupied states at the Γ point. In multilayer WS 2 , we discovered variations in the electronic states that spatially align with the crystalline grains of underlying Au. Corroborated by density functional theory calculations, we attribute the electronic structure variations to stacking variations within the WS 2 films. We propose that strong interactions exerted by Au grains cause slippage of the interfacing WS 2 layer with respect to the rest of the WS 2 film. Our findings illustrate that the electronic properties of transition metal dichalcogenides, and more generally 2D layered materials, are physically altered by the interactions with the interfacing materials, in addition to the electron screening and defects that have been widely considered.