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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 1,657 records · Page 92
All sourcesNASA NTRSDOE OSTI
DOE OSTI2021

Effect of thickness on metal-to-semiconductor transition in 2-dimensional TiN thin films

Titanium nitride thin films have been grown on c-plane sapphire substrates using a pulsed laser deposition technique in the thickness range of 6–45 nm. X-ray diffraction (XRD) analysis has demonstrated TiN (111) as the preferred orientation of growth on the sapphire substrates. The XRD measurements have also indicated that orientational alignment between the TiN and the sapphire improved with an increase in the TiN film thickness. A change in the resistivity behavior of the TiN thin films from metallic to semiconducting has been observed as the TiN film thickness is reduced below 15 nm. Analyzing and fitting of TiN films’ conductivity data have shown that while the Arrhenius law governs their conductivity in the temperature range of 300–350 K, conductivity values of the films follow the variable range hopping mechanism below 300 K.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Deep level study of chlorine-based dry etched β-Ga 2 O 3

Chlorine-based gases are used for the reactive ion etching (RIE) of β-Ga 2 O 3 . However, the effects of Cl-plasma on the electronic properties of β-Ga 2 O 3 are not known. In order to shed light on this topic, we carried out an experimental and theoretical study on β-Ga 2 O 3 epilayers treated with Cl 2 /Ar or BCl 3 /Ar plasma. We found four traps in the 0.2–0.8 eV energy range below the conduction band edge (EC). Two of these, located at E C -0.24 eV and E C -0.28 eV, arise only when the epilayers are treated with BCl 3 /Ar. While the involvement of Cl in their microscopic structure is not discarded, the possibility that these two levels might have an intrinsic nature seems more plausible. Our findings might explain the reported effects on the Schottky barrier diodes of β-Ga 2 O 3 when RIE is employed during processing.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Correlated nanoelectronics and the second quantum revolution

The growing field of correlated nanoelectronics exists at the intersection of two established fields: correlated oxide electronics and semiconductor nanoelectronics. The development of quantum technologies that exploit quantum coherence and entanglement for the purposes of computation, simulation, and sensing will require complex material properties to be controlled at nanoscale dimensions. Heterostructures and nanostructures formed at the interface between LaAlO 3 and SrTiO 3 exhibit striking behavior that arises from the ability to program the conductive behavior at extreme nanoscale dimensions. The active electronic layer, SrTiO 3 , exhibits a wide range of gate-tunable phenomena such as ferroelectricity, ferroelasticity, magnetism, superconductivity, and spin–orbit coupling, all of which can be controlled at the nanoscale using two reversible methods: conductive atomic force microscope lithography and ultra-low-voltage electron beam lithography. Mesoscopic devices such as single-electron transistors and quasi-one-dimensional electron waveguides can be “sketched” using these techniques, and the properties of these devices differ significantly from those created from traditional semiconductors, such as Si or GaAs. The strongly correlated nature of the SrTiO 3 system is evident from superconducting behavior as well as a state in which electrons are paired outside the superconducting state. A highly exotic phase was discovered in which a degenerate quantum liquid is formed from bound states of n = 2, 3, 4, … electrons. Further development of correlated nanoelectronics based on the LaAlO 3 /SrTiO 3 system can potentially lead to a general platform for quantum simulation as well as a pathway for the development of highly entangled states of multiple photons.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Nature of contaminants introduced in silicon wafers during molecular beam epitaxy chamber annealing

Epitaxial monolithic III–V/Si tandem solar cells are one of the most promising technologies to be adopted by the industry after the efficiency of the current market dominating single junction silicon solar cell saturates at its fundamental limit. One of the key limitations of this technology is the degradation of silicon wafers during in situ annealing in the molecular beam epitaxy chamber. Determining the nature of contaminants in this process is key to improve the efficiency of epitaxial tandem solar cells. However, to date, the nature of contaminants from molecular beam epitaxy chambers remains unknown. In this work, we use photoluminescence imaging, lifetime spectroscopy, and deep level transient spectroscopy to measure the electronic properties of extrinsic impurities incorporated during annealing in the molecular beam epitaxy chamber. Photoluminescence images reveal that at least two impurities diffuse into silicon wafers during molecular beam epitaxy annealing. One is highly localized, while the other one is distributed uniformly across the whole wafer. Phosphorus diffusion is found to confine the localized impurity within the diffused layer but is ineffective at preventing the indiffusion of other impurities. Lifetime spectroscopy shows that metastable impurities with characteristic similar to Cr and CrB in our molecular beam epitaxy annealed silicon wafers. No evidence of Fe or FeB was observed. The emission rates and concentrations of the electrically active defects were measured with deep-level transient spectroscopy: The emission rates of detected defects do not match that of known Cr-related defects.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Formation of tubular conduction channel in a SiGe(P)/Si core/shell nanowire heterostructure

Realizing a tubular conduction channel within a one-dimensional core–shell nanowire (NW) enables better understanding of quantum phenomena and exploration of electronic device applications. Herein, we report the growth of a SiGe(P)/Si core/shell NW heterostructure using a chemical vapor deposition coupled with vapor–liquid–solid growth mechanism. The entire NW heterostructure behaves as a p-type semiconductor, which demonstrates that the high-density carriers are confined within the 4 nm-thick Si shell and form a tubular conduction channel. These findings are confirmed by both calculations and the gate-dependent current–voltage ( I d – V g ) characteristics. Atomic resolution microscopic analyses suggest a coherent epitaxial core/shell interface where strain is released by forming dislocations along the axial direction of the NW heterostructure. Additional surface passivation achieved via growing a SiGe(P)/Si/SiGe core/multishell NW heterostructure suggests potential strategies to enhance the tubular carrier density, which could be further modified by improving multishell crystallinity and structural design.

36 MATERIALS SCIENCE↗
DOE OSTI2023

In situ measurements of non-equilibrium positron state defects during He irradiation in Si

Radiation-induced property changes in materials originate from the energy transfer from an incoming particle to the existing lattice, displacing atoms. The displaced atoms can cause the formation of extended defects including dislocation loops, voids, or precipitates. The non-equilibrium defects created during damage events determine the extent of these larger defects and are a function of dose rate, material, and temperature. However, these defects are transient and can only be probed indirectly. Herein, we present direct experimental measurements and evidence of irradiated non-equilibrium vacancy formation, where in situ positron annihilation spectroscopy was used to prove the generation of non-equilibrium defects in silicon.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Destabilizing effects of edge infernal components on resistive wall modes in advanced tokamak scenarios

The stability of the n = 1 resistive wall modes (RWMs) dominated by the pressure-driven infernal components is investigated using the ideal magnetohydrodynamics (MHD) code AEGIS for the advanced tokamak scenarios. Here, n is the toroidal mode number. In the advanced tokamak scenarios, due to the large fraction of bootstrap current contribution, the profile of safety factor q is deeply reversed in magnetic shear in the central core region and locally flattened within the edge pedestal. Consequently, the pressure-driven infernal components develop in the corresponding flat-q regions of both core and edge. However, the edge infernal components dominate the n = 1 RWM structure and lead to lower β N limits for the advanced tokamak scenarios. In the framework of ideal MHD, the edge rotation is found the most critical to the stabilization due to the dominant influence of the edge infernal components, which should be maintained sufficiently large in magnitude and range in order for the rotation alone to fully suppress the n = 1 RWM in typical advanced tokamak scenarios.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Arbitrarily accurate, nonparametric coarse graining with Markov renewal processes and the Mori–Zwanzig formulation

Stochastic dynamics, such as molecular dynamics, are important in many scientific applications. However, summarizing and analyzing the results of such simulations is often challenging due to the high dimension in which simulations are carried out and, consequently, due to the very large amount of data that are typically generated. Coarse graining is a popular technique for addressing this problem by providing compact and expressive representations. Coarse graining, however, potentially comes at the cost of accuracy, as dynamical information is, in general, lost when projecting the problem in a lower-dimensional space. This article shows how to eliminate coarse-graining error using two key ideas. First, we represent coarse-grained dynamics as a Markov renewal process. Second, we outline a data-driven, non-parametric Mori–Zwanzig approach for computing jump times of the renewal process. Numerical tests on a small protein illustrate the method.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Loss of energetic ions due to n = 1 internal kink instability in HL-2M

Effects of three-dimensional (3D) perturbations due to an unstable n = 1 (n is the toroidal mode number) internal kink (IK) on the energetic particles (EPs) are systematically investigated for the HL-2M tokamak, utilizing the MARS-F/K code and a recently developed test particle tracing module. A high-beta sawteething HL-2M scenario, simulated by the TRANSP code, is chosen for this study. In general, the 3D perturbation associated with an unstable IK is found to affect the EP drift orbit, confinement, and loss in HL-2M. The instability-induced EP loss fraction is found to be typically less than 10%, without counting for the prompt orbit loss associated with the 2D equilibrium field for counter-current particles. The latter reaches about 16% in HL-2M. For co-current EPs, a 100 G 3D magnetic field (inside the plasma) due to the IK does not induce any EP loss assuming a static perturbation. A sawtooth-like time-varying perturbation field, with the peak amplitude reaching 1000 G, can however produce about 30% loss for the co-current EPs in HL-2M. The majority of lost EPs tend to strike the lower divertor region, with a small fraction of particles striking the low-field side mid-plane region of the limiting surface.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Hybrid programming-model strategies for GPU offloading of electronic structure calculation kernels

To address the challenge of performance portability and facilitate the implementation of electronic structure solvers, we developed the basic matrix library (BML) and Parallel, Rapid O(N), and Graph-based Recursive Electronic Structure Solver (PROGRESS) library. The BML implements linear algebra operations necessary for electronic structure kernels using a unified user interface for various matrix formats (dense and sparse) and architectures (CPUs and GPUs). Focusing on density functional theory and tight-binding models, PROGRESS implements several solvers for computing the single-particle density matrix and relies on BML. In this paper, we describe the general strategies used for these implementations on various computer architectures, using OpenMP target functionalities on GPUs, in conjunction with third-party libraries to handle performance critical numerical kernels. In this study, we demonstrate the portability of this approach and its performance in benchmark problems.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Promises and technological prospects of two-dimensional Rashba materials

The Rashba spin–orbit coupling effect, primarily arising from structural-inversion asymmetry in periodic crystals, has garnered considerable attention due to its tunability and potential applications in spintronics. Its capability to manipulate electron spin without an external magnetic field opens new avenues for spintronic device design, particularly in semiconductor technology. Within this framework, 2D Rashba materials hold special interest due to their inherent characteristics, which facilitate miniaturization and engineering capabilities. In this Perspective article, we provide an overview of recent advancements in the research of 2D Rashba materials, aiming to offer a comprehensive understanding of the diverse manifestations and multifaceted implications of the Rashba effect in material science. Rather than merely presenting a list of materials, our approach involves synthesizing various viewpoints, assessing current trends, and addressing challenges within the field. Our objective is to bridge the gap between fundamental research and practical applications by correlating each material with the necessary advancements required to translate theoretical concepts into tangible technologies. Furthermore, we highlight promising avenues for future research and development, drawing from insights gleaned from the current state of the field.

Physics↗
DOE OSTI2025

Tailoring additive manufacturing to optimize dynamic properties in 316L stainless steel

With the advent of additive manufacturing, manipulation of typical microstructural elements such as grain size, texture, and defect densities is now possible at a faster time scale. While the processing–structure–property relationship in additive manufactured metals has been well studied over the past decade, little work has been done in understanding how this process affects the dynamic behavior of materials. We postulate that additive manufacturing can be used to alter the material microstructure and used to enhance its dynamic strength. In this work, 316L stainless steel (SS) was manufactured via selected laser melting and its microstructure was altered through changing build parameters like laser power, speed, and hatch spacing systematically. These samples were then subjected to spall recovery experiments to measure the spall strength and quantify the amount of damage as a function of build parameters. By mapping the spall strength as a function of build parameters, this work demonstrated that indeed additive manufacturing can be used to tailor the spall strength of 316L SS. This work also determined the optimum build parameters (laser power=195W; scanning speed=1083mm/s; hatch spacing=0.09mm; layer thickness=0.02mm) to obtain the highest spall strength and the least amount of total damage in 316L SS. Microstructural characterization of the pre- and post-mortem samples revealed that increased grain average misorientation and textural index were the main driving force behind this higher spall strength. This work aims to enhance microstructural engineering techniques to design materials with greater resistance to dynamic shock loading.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Effects of annealing temperature on the magnetic properties of highly crystalline biphase iron oxide nanorods

We report on the effects of annealing temperatures ranging from 225 °C to 325 °C on the magnetic properties of high aspect ratio iron oxide nanorods consisting of a ferrimagnetic Fe 3 O 4 phase and an antiferromagnetic α-Fe 2 O 3 phase in an as-prepared state. Annealing at the aforementioned temperatures under a constant flow of O 2 for 3 h leads to an increment of the volume fraction of the antiferromagnetic α-Fe 2 O 3 phase and concomitant enhancement of the crystallinity of the ferrimagnetic Fe 3 O 4 phase. These opposing effects compete with each other, resulting in a decrease in global magnetization with increasing the annealing temperature. The desirable magnetic properties are achieved for the sample annealed at 250 °C. For all samples investigated, we observed an increase in low field magnetization at low temperatures after the sample is field cooled in the presence of a 1T magnetic field, which we attribute to the ordering of macro-spins of the weakly ordered antiferromagnetic α-Fe 2 O 3 phase in the presence of the cooling field. Our study will pave the way for determining the optimal conditions to enhance the magnetic characteristics in iron oxide nanorods, which will enable its use in spintronics and biomedical applications.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Frustration by design

Geometrical frustration is a condition that occurs when a material’s lattice geometry precludes minimizing the energy of all the interactions among pairs of neighbors simultaneously. Moreover, the simplest example is three antiferromagnetically coupled Ising spins, pointing up or down, on the corners of an equilateral triangle: It is also impossible to arrange the spins so that each pair is antiparallel. In more complex magnetic lattices, the frustrated state can arise from the combination of lattice geometry and the strength and sign of the interactions among the magnetic dipole moments.1 (See the article by Roderich Moessner and Art Ramirez, Physics Today, February 2006, page 24.) A wide variety of exotic and collective phenomena sometimes arises from the competing interactions. One prime example is spin liquids, materials in which the local atomic moments fluctuate down to the lowest accessible temperatures and never settle into a static ground-state configuration.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Transport gap in SmB 6 protected against disorder

Significance The realization of modern electrical and optoelectrical devices is possible because of the successful control of point defects in semiconductors or narrow band-gapped insulators. Recently, a new subclass of these semiconductors has been discovered, so-called topological insulators (TIs). These 3D TIs harbor a unique 2D conduction layer on the surfaces that can be potentially applicable for novel quantum devices. The access of these surface states, however, is easily hindered by bulk conduction from unintentional defects. Surprisingly, by using a unique resistance measurement in a strongly correlated TI S m B 6 , we find that typical defect signatures of a semiconductor in electrical transport are absent in the S m B 6 bulk, including samples prepared with large samarium-to-boron off-stoichiometry.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Modification of Wool Fibers via Base/Cationic Detergent Pretreatment and Transglutaminase-mediated Reaction of Keratin

The surface modification of wool fibers is an important part of the textile industry to add functionality and stability to wool products. In this study, we developed a process utilizing a base/cationic surfactant solution pretreatment followed by an enzyme-mediated keratin crosslinking reaction to modify the wool fibers. Changes in water contact angle demonstrated the successful transformation of the hydrophobic wool surface to a more hydrophilic one after soaking in sodium carbonate solution containing hexadecyltrimethylammonium bromide (CTAB). The treated fabrics were further characterized by colorimetry and fluorescent spectrometry. Results showed that the pretreatment increased the yellowness of fabrics and caused some structural changes among certain amino acids, such as tryptophan and cystine. Keratin extracted from coarse wool fibers was further applied on pretreated fabrics through a microbial transglutaminase (mTGase) mediated reaction under mild conditions. Morphological characterization via SEM demonstrated the effective coverage of keratin on the scales of wool. The current method may provide an alternative processing protocol to modify wool fibers and improve the quality and performance of wool products.

36 MATERIALS SCIENCE↗