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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 1,657 records · Page 92
All sourcesNASA NTRSDOE OSTI
DOE OSTI2022

Roll-to-Roll, Dual-Layer Slot Die Coating of Chitin and Cellulose Oxygen Barrier Films for Renewable Packaging

Cellulose and chitin are the two most abundant naturally produced biopolymers and are being extensively studied as candidates for renewable oxygen barrier films used in packaging. It has been shown that bilayers formed from cellulose nanocrystals (CNCs) and chitin nanofibers (ChNFs) exhibit oxygen barrier properties similar to polyethylene terephthalate (PET). However, this prior work explored only coating each layer individually in sequence through techniques such as spray coating. Here, we demonstrate the viability of dual-layer slot die coating of CNC/ChNF bilayers onto cellulose acetate (CA) substrates. The dual-layer slot die method enables significantly lower oxygen permeability versus spray coating while using a roll-to-roll system that applies the bilayer in a single pass. This work discusses suspension properties, wetting, and drying conditions required to achieve well-controlled ChNF/CNC bilayers. Spray-coated bilayer films were on average 25% thinner than the dual-layer bilayer film; however, the thickness-normalized oxygen permeability (OP) of the dual-layer-coated ChNF/CNC bilayer film on CA was 20 times better than that of the spray-coated bilayers. Additionally, it has been shown that ChNF contributes to the wetting and barrier properties. Values of OP for the slot die-coated bilayers under optimized drying conditions were as low as 1.2 cm 3 ∙μm∙m -2 ∙d -1 ∙kPa -1 , corresponding to a normalized oxygen transmission rate of 0.32 cm 3 ∙m -2 ∙d -1 at 23 °C and 50% relative humidity. It is also noted that the adhesive properties of the dual-layer coating are also improved when films are air-dried and that ChNF contributes to the wetting and barrier properties.

09 BIOMASS FUELS↗
DOE OSTI2024

Sputter-Coated TiO 2 Films as Passivation and Hole Transfer Layers for Improved Energy Conversion with Solar Fuel WO 3 /CuWO 4 Photoanodes

Atomic layer deposited (ALD) “leaky” TiO 2 have gained interest as charge-selective protection layers for semiconductor solar fuel electrodes. Here we demonstrate the use of sputter-deposited TiO 2 layers as hole selective contacts for WO 3 /CuWO 4 type 2 heterojunction water oxidation photoanodes for the first time. TiO 2 protection layers with varying thicknesses (2 to 128 nm) were deposited using the RF magnetron sputtering technique. The resulting TiO 2 films are amorphous based on Raman spectroscopy and powder XRD. Photoelectrochemical scans and Vibrating Kelvin probe photovoltage spectroscopy show that 2-8 nm TiO 2 layers nearly double the photocurrent to 0.97 mA cm -2 under AM 1.5 illumination (19% AQE at 350 nm), increase the surface photovoltage signal by 25%, and increase the WO 3 /CuWO 4 bandgap. These effects can be attributed to the selectivity of TiO 2 for photoholes. Additionally, SPV data suggest that TiO 2 overlayers suppress copper-based surface recombination defects. Reduced photocurrent and the photovoltage are seen in thicker TiO 2 films (16 to 128 nm) as a result of an increasing hole transfer resistance and because of light shading effects according to photoaction spectra. The TiO 2 films also improve the stability of the WO 3 /CuWO 4 photoelectrodes, allowing nearly constant O 2 evolution over 3 hours after an initial 20-35% loss. Overall, this work establishes RF magnetron sputtering as a useful method to install amorphous TiO 2 passivation layers for improved WO 3 /CuWO 4 solar fuel photoelectrodes. Furthermore, we show how the combination of PEC with SPV measurements provides insight into the function of the TiO 2 coatings.

CuWO4↗
DOE OSTI2017

Formation of a Crack-Free, Hybrid Skin Layer with Tunable Surface Topography and Improved Gas Permeation Selectivity on Elastomers Using Gel–Liquid Infiltration Polymerization

Surface modifications of elastomers and gels are crucial for emerging applications such as soft robotics and flexible electronics, in large part because they provide a platform to control wettability, adhesion, and permeability. Current surface modification methods via ultraviolet-ozone (UVO) and/or O2 plasma, atomic layer deposition (ALD), plasmas deposition, and chemical treatment impart a dense polymer or inorganic layer on the surface that is brittle and easy to fracture at low strain levels. This paper presents a new method, based on gel–liquid infiltration polymerization, to form hybrid skin layers atop elastomers. The method is unique in that it allows for control of the skin layer topography, with tunable feature sizes and aspect ratios as high as 1.8 without fracture. Unlike previous techniques, the skin layer formed here dramatically improves the barrier properties of the elastomer, while preserving skin layer flexibility. Furthermore, the method is versatile and likely applicable to most interfacial polymerization systems and network polymers on flat and patterned surfaces.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Growth and Structure of the First Layers of Ice on Ru(0001) and Pt(111)

Scanning tunneling microscopy was used to probe the structure and growth of the first few layers of water on Ru(0001) and Pt(111) at the molecular level. The surface-bound first layer is composed of a mixture of water molecules forming hexagonal structures, both in registry and out-of-registry with the substrate atoms. The hexagons are connected by pentagonal and heptagonal units. At temperatures below 140 K, this layer structure gives rise to the growth of metastable amorphous structures in the second and higher layers. We found that in the transition from amorphous to crystalline ice the structure of the original bottom layer changes to one in perfect local registry with the hexagonal surfaces of Ru(0001) and Pt(111). We further discovered structural defects in the form of extended one-dimensional lines of five- and eight-membered rings that are domain boundaries and stacking faults in the growing ice layers, which lead to the formation of metastable cubic ice.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2025

Voltage breakdown analyses in anion exchange membrane water electrolysis – the contributions of catalyst layer resistance on overall overpotentials

Despite many recent advances, overpotentials remain high for anion exchange membrane water electrolyzers (AEMWEs). Voltage breakdown analyses (VBA) can help decouple the origins of overpotentials and facilitate design decisions to improve cell performance, but studies investigating how to adapt and apply VBA to AEMWEs are lacking. Specifically, catalyst layer resistances and their contributions to overpotentials are not consistently quantified in water electrolysis and are rarely quantified for AEMWEs. This work presents a systematic methodology for VBA tailored to AEMWEs, including an approach to Tafel analysis in the absence of a reference electrode and under conditions where both the oxygen evolution reaction and hydrogen evolution reaction exhibit significant overpotentials. Catalyst layer resistance contributions are diagnosed via changes in the catalyst layer thickness, transport layer porosity, ionomer content, and electrolyte concentration. In this study, we explain discrepancies between inherent catalytic kinetics and device level performance and identify catalyst layer design strategies to reduce catalyst layer resistances.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2012

Effect of spacer layer thickness on multi-stacked InGaAs quantum dots grown on GaAs (311)B substrate for application to intermediate band solar cells

We have investigated the properties of multi-stacked layers of self-organized In{sub 0.4}Ga{sub 0.6}As quantum dots (QDs) on GaAs (311)B grown by molecular beam epitaxy. We found that a high degree of in-plane ordering of QDs structure with a six-fold symmetry was maintained though the growth has been performed at a higher growth rate than the conventional conditions. The dependence of photoluminescence characteristics on spacer layer thickness showed an increasing degree of electronic coupling between the stacked QDs for thinner spacer layers. The external quantum efficiency for an InGaAs/GaAs quantum dot solar cell (QDSC) with a thin spacer layer thickness increased in the longer wavelength range due to additive contribution from QD layers inserted in the intrinsic region. Furthermore, a photocurrent production by 2-step photon absorption has been observed at room temperature for the InGaAs/GaAs QDSC with a spacer layer thickness of 15 nm.

36 MATERIALS SCIENCE↗
DOE OSTI2012

Electronic structure of delta-doped La:SrTiO{sub 3} layers by hard x-ray photoelectron spectroscopy

We have employed hard x-ray photoemission (HAXPES) to study a delta-doped SrTiO{sub 3} layer that consisted of a 3-nm thickness of La-doped SrTiO{sub 3} with 6% La embedded in a SrTiO{sub 3} film. Results are compared to a thick, uniformily doped La:SrTiO{sub 3} layer. We find no indication of a band offset for the delta-doped layer, but evidence of the presence of Ti{sup 3+} in both the thick sample and the delta-layer, and indications of a density of states increase near the Fermi energy in the delta-doped layer. These results further demonstrate that HAXPES is a powerful tool for the non-destructive investigation of deeply buried doped layers.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2012

Influence of capping layers on CoFeB anisotropy and damping

Magnetic behavior of CoFeB at various thicknesses ranging from 2 nm to 8 nm capped with different materials, such as MgO, Ta, Ru, and V have been studied. The films were sputter-deposited and subsequently characterized by magnetometry and broadband ferromagnetic resonance (FMR). There are magnetically dead layers at the interface observed with Ru and Ta capping layers, while MgO and V have almost no effect on the magnetization of the CoFeB. As the ferromagnetic layer is made thinner, the effective magnetization decreases, indicating an interfacial perpendicular anisotropy. Particularly in the case of MgO, V/Ru, and V/Ta capping layers, interfacial perpendicular anisotropy is induced in CoFeB, and the Gilbert damping parameter is also reduced. The origin of this perpendicular magnetic anisotropy (PMA) is understood to be caused by the interface anisotropy between the free layer and the capping layer. The effect of post-deposition annealing and CoFeB thickness on the anisotropy and damping of V/Ta capped samples are reported. Doping CoFeB with vanadium (V) greatly reduced the 4{pi}M{sub s} and 4{pi}M{sub eff} values, resulting in an effective increase in the PMA.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2012

Layering and temperature-dependent magnetization and anisotropy of naturally produced Ni/NiO multilayers

Ni/NiO multilayers were grown by magnetron sputtering at room temperature, with the aid of the natural oxidation procedure. That is, at the end of the deposition of each single Ni layer, air is let to flow into the vacuum chamber through a leak valve. Then, a very thin NiO layer ({approx}1.2 nm) is formed. Simulated x-ray reflectivity patterns reveal that layering is excellent for individual Ni-layer thickness larger than 2.5 nm, which is attributed to the intercalation of amorphous NiO between the polycrystalline Ni layers. The magnetization of the films, measured at temperatures 5-300 K, has almost bulk-like value, whereas the films exhibit a trend to perpendicular magnetic anisotropy (PMA) with an unusual significant positive interface anisotropy contribution, which presents a weak temperature dependence. The power-law behavior of the multilayers indicates a non-negligible contribution of higher order anisotropies in the uniaxial anisotropy. Bloch-law fittings for the temperature dependence of the magnetization in the spin-wave regime show that the magnetization in the multilayers decreases faster as a function of temperature than the one of bulk Ni. Finally, when the individual Ni-layer thickness decreases below 2 nm, the multilayer stacking vanishes, resulting in a dramatic decrease of the interface magnetic anisotropy and consequently in a decrease of the perpendicular magnetic anisotropy.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2013

Two-dimensional quasi-double-layers in two-electron-temperature, current-free plasmas

The expansion of a plasma with two disparate electron populations into vacuum and channeled by a divergent magnetic nozzle is analyzed with an axisymmetric model. The purpose is to study the formation and two-dimensional shape of a current-free double-layer in the case when the electric potential steepening can still be treated within the quasineutral approximation. The properties of this quasi-double-layer are investigated in terms of the relative fraction of the high-energy electron population, its radial distribution when injected into the nozzle, and the geometry and intensity of the applied magnetic field. The two-dimensional double layer presents a curved shape, which is dependent on the natural curvature of the equipotential lines in a magnetically expanded plasma and the particular radial distribution of high-energy electrons at injection. The double layer curvature increases the higher the nozzle divergence is, the lower the magnetic strength is, and the more peripherally hot electrons are injected. A central application of the study is the operation of a helicon plasma thruster in space. To this respect, it is shown that the curvature of the double layer does not increment the thrust, it does not modify appreciably the downstream divergence of the plasma beam, but it increases the magnetic-to-pressure thrust ratio. The present study does not attempt to cover current-free double layers involving plasmas with multiple populations of positive ions.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2013

Optical characterization of free electron concentration in heteroepitaxial InN layers using Fourier transform infrared spectroscopy and a 2 Multiplication-Sign 2 transfer-matrix algebra

Fourier Transform Infrared (FTIR) reflectance spectroscopy has been implemented as a non-destructive, non-invasive, tool for the optical characterization of a set of c-plane InN single heteroepitaxial layers spanning a wide range of thicknesses (30-2000 nm). The c-plane (0001) InN epilayers were grown by plasma-assisted molecular beam epitaxy (PAMBE) on GaN(0001) buffer layers which had been grown on Al{sub 2}O{sub 3}(0001) substrates. It is shown that for arbitrary multilayers with homogeneous anisotropic layers having their principal axes coincident with the laboratory coordinates, a 2 Multiplication-Sign 2 matrix algebra based on a general transfer-matrix method (GTMM) is adequate to interpret their optical response. Analysis of optical reflectance in the far and mid infrared spectral range has been found capable to discriminate between the bulk, the surface and interface contributions of free carriers in the InN epilayers revealing the existence of electron accumulation layers with carrier concentrations in mid 10{sup 19} cm{sup -3} at both the InN surface and the InN/GaN interface. The spectra could be fitted with a three-layer model, determining the different electron concentration and mobility values of the bulk and of the surface and the interface electron accumulation layers in the InN films. The variation of these values with increasing InN thickness could be also sensitively detected by the optical measurements. The comparison between the optically determined drift mobility and the Hall mobility of the thickest sample reveals a value of r{sub H} = 1.49 for the Hall factor of InN at a carrier concentration of 1.11 Multiplication-Sign 10{sup 19} cm{sup -3} at 300 Degree-Sign {Kappa}.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Effect of low-temperature annealing on the electronic- and band-structures of (Ga,Mn)As epitaxial layers

The effect of outdiffusion of Mn interstitials from (Ga,Mn)As epitaxial layers, caused by post-growth low-temperature annealing, on their electronic- and band-structure properties has been investigated by modulation photoreflectance (PR) spectroscopy. The annealing-induced changes in structural and magnetic properties of the layers were examined with high-resolution X-ray diffractometry and superconducting quantum interference device magnetometry, respectively. They confirmed an outdiffusion of Mn interstitials from the layers and an enhancement in their hole concentration, which were more efficient for the layer covered with a Sb cap acting as a sink for diffusing Mn interstitials. The PR results demonstrating a decrease in the band-gap-transition energy in the as-grown (Ga,Mn)As layers, with respect to that in the reference GaAs one, are interpreted by assuming a merging of the Mn-related impurity band with the GaAs valence band. Whereas an increase in the band-gap-transition energy caused by the annealing treatment of the (Ga,Mn)As layers is interpreted as a result of annealing-induced enhancement of the free-hole concentration and the Fermi level location within the valence band. The experimental results are consistent with the valence-band origin of itinerant holes mediating ferromagnetic ordering in (Ga,Mn)As, in agreement with the Zener model for ferromagnetic semiconductors.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Tuning the dead-layer behavior of La{sub 0.67}Sr{sub 0.33}MnO{sub 3}/SrTiO{sub 3} via interfacial engineering

The dead-layer behavior, deterioration of the bulk properties in near-interface layers, restricts the applications of many oxide heterostructures. We present the systematic study of the dead-layer in La{sub 0.67}Sr{sub 0.33}MnO{sub 3}/SrTiO{sub 3} grown by ozone-assisted molecular beam epitaxy. Dead-layer behavior is systematically tuned by varying the interfacial doping, while unchanged with varied doping at any other atomic layers. In situ photoemission and low energy electron diffraction measurements suggest intrinsic oxygen vacancies at the surface of ultra-thin La{sub 0.67}Sr{sub 0.33}MnO{sub 3}, which are more concentrated in thinner films. Our results show correlation between interfacial doping, oxygen vacancies, and the dead-layer, which can be explained by a simplified electrostatic model.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Asymptotic theory of double layer and shielding of electric field at the edge of illuminated plasma

The method of matched asymptotic expansions is applied to the problem of a collisionless plasma generated by UV illumination localized in a central part of the plasma in the limiting case of small Debye length λ{sub D}. A second-approximation asymptotic solution is found for the double layer positioned at the boundary of the illuminated region and for the un-illuminated plasma for the plane geometry. Numerical calculations for different values of λ{sub D} are reported and found to confirm the asymptotic results. The net integral space charge of the double layer is asymptotically small, although in the plane geometry it is just sufficient to shield the ambipolar electric field existing in the illuminated region and thus to prevent it from penetrating into the un-illuminated region. The double layer has the same mathematical nature as the intermediate transition layer separating an active plasma and a collisionless sheath, and the underlying physics is also the same. In essence, the two layers represent the same physical object: a transonic layer.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2014

The effects of high temperature processing on the structural and optical properties of oxygenated CdS window layers in CdTe solar cells

High efficiency CdTe solar cells typically use oxygenated CdS (CdS:O) window layers. We synthesize CdS:O window layers at room temperature (RT) and 270 °C using reactive sputtering. The band gaps of CdS:O layers deposited at RT increase when O{sub 2}/(O{sub 2} + Ar) ratios in the deposition chamber increase. On the other hand, the band gaps of CdS:O layers deposited at 270 °C decrease as the O{sub 2}/(O{sub 2} + Ar) ratios increase. Interestingly, however, our high temperature closed-space sublimation (CSS) processed CdTe solar cells using CdS:O window layers deposited at RT and 270 °C exhibit very similar cell performance, including similar short-circuit current densities. To understand the underlying reasons, CdS:O thin films deposited at RT and 270 °C are annealed at temperatures that simulate the CSS process of CdTe deposition. X-ray diffraction, atomic force microscopy, and UV-visible light absorption spectroscopy characterization of the annealed films reveals that the CdS:O films deposited at RT undergo grain regrowth and/or crystallization and exhibit reduced band gaps after the annealing. Our results suggest that CdS:O thin films deposited at RT and 270 °C should exhibit similar optical properties after the deposition of CdTe layers, explaining the similar cell performance.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Drastic reduction in the surface recombination velocity of crystalline silicon passivated with catalytic chemical vapor deposited SiN{sub x} films by introducing phosphorous catalytic-doped layer

We improve the passivation property of n-type crystalline silicon (c-Si) surface passivated with a catalytic chemical vapor deposited (Cat-CVD) Si nitride (SiN{sub x}) film by inserting a phosphorous (P)-doped layer formed by exposing c-Si surface to P radicals generated by the catalytic cracking of PH{sub 3} molecules (Cat-doping). An extremely low surface recombination velocity (SRV) of 2 cm/s can be achieved for 2.5 Ω cm n-type (100) floating-zone Si wafers passivated with SiN{sub x}/P Cat-doped layers, both prepared in Cat-CVD systems. Compared with the case of only SiN{sub x} passivated layers, SRV decreases from 5 cm/s to 2 cm/s. The decrease in SRV is the result of field effect created by activated P atoms (donors) in a shallow P Cat-doped layer. Annealing process plays an important role in improving the passivation quality of SiN{sub x} films. The outstanding results obtained imply that SiN{sub x}/P Cat-doped layers can be used as promising passivation layers in high-efficiency n-type c-Si solar cells.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

High-temperature degradation in plasma-enhanced chemical vapor deposition Al{sub 2}O{sub 3} surface passivation layers on crystalline silicon

In this publication, the activation and degradation of the passivation quality of plasma-enhanced chemical vapor deposited aluminum oxide (Al{sub 2}O{sub 3}) layers with different thicknesses (10 nm, 20 nm, and 110 nm) on crystalline silicon (c-Si) during long and high temperature treatments are investigated. As indicated by Fourier Transform Infrared Spectroscopy, the concentration of tetrahedral and octahedral sites within the Al{sub 2}O{sub 3} layer changes during temperature treatments and correlates with the amount of negative fixed charges at the Si/Al{sub 2}O{sub 3} interface, which was detected by Corona Oxide Characterization of Semiconductors. Furthermore, during a temperature treatment at 820 °C for 30 min, the initial amorphous Al{sub 2}O{sub 3} layer crystallize into the γ-Al{sub 2}O{sub 3} structure and was enhanced by additional oxygen as was proven by x-ray diffraction measurements and underlined by Density Functional Theory simulations. The crystallization correlates with the increase of the optical density up to 20% while the final Al{sub 2}O{sub 3} layer thickness decreases at the same time up to 26%. All observations described above were detected to be Al{sub 2}O{sub 3} layer thickness dependent. These observations reveal novel aspects to explain the temperature induced passivation and degradation mechanisms of Al{sub 2}O{sub 3} layers at a molecular level like the origin of the negative fixe charges at the Si/SiO{sub x}/Al{sub 2}O{sub 3} interface or the phenomena of blistering. Moreover, the crystal phase of Al{sub 2}O{sub 3} does not deliver good surface passivation due to a high concentration of octahedral sites leading to a lower concentration of negative fixed charges at the interface.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2014

Comprehensive kinetic analysis of the plasma-wall transition layer in a strongly tilted magnetic field

The magnetized plasma-wall transition (MPWT) layer at the presence of the obliquity of the magnetic field to the wall consists of three sub-layers: the Debye sheath (DS), the magnetic pre-sheath (MPS), and the collisional pre-sheath (CPS) with characteristic lengths λ{sub D} (electron Debye length), ρ{sub i} (ion gyro-radius), and ℓ (the smallest relevant collision length), respectively. Tokamak plasmas are usually assumed to have the ordering λ{sub D}≪ρ{sub i}≪ℓ, when the above-mentioned sub-layers can be distinctly distinguished. In the limits of ε{sub Dm}(λ{sub D}/ρ{sub i})→0 and ε{sub mc}(ρ{sub i}/ℓ)→0 (“asymptotic three-scale (A3S) limits”), these sub-layers are precisely defined. Using the smallness of the tilting angle of the magnetic field to the wall, the ion distribution functions are found for three sub-regions in the analytic form. The equations and characteristic length-scales governing the transition (intermediate) regions between the neighboring sub-layers (CPS – MPS and MPS – DS) are derived, allowing to avoid the singularities arising from the ε{sub Dm}→0 and ε{sub mc}→0 approximations. The MPS entrance and the related kinetic form of the Bohm–Chodura condition are successfully defined for the first time. At the DS entrance, the Bohm condition maintains its usual form. The results encourage further study and understanding of physics of the MPWT layers in the modern plasma facilities.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗