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At least 1,657 records · Page 92

The effective density of randomly moving electrons and related characteristics of materials with degenerate electron gas

Interpretation of the conductivity of metals, of superconductors in the normal state and of semiconductors with highly degenerate electron gas remains a significant issue if consideration is based on the classical statistics. This study is addressed to the characterization of the effective density of randomly moving electrons and to the evaluation of carrier diffusion coefficient, mobility, and other parameters by generalization of the widely published experimental results. The generalized expressions have been derived for various kinetic parameters attributed to the non-degenerate and degenerate electron gas, by analyzing a random motion of the single type carriers in homogeneous materials. The values of the most important kinetic parameters for different metals are also systematized and discussed. It has been proved that Einstein's relation between the diffusion coefficient and the drift mobility of electrons is held for any level of degeneracy if the effective density of randomly moving carriers is properly taken into account.

36 MATERIALS SCIENCE↗

Phosphorus diffusion and deactivation during SiGe oxidation

Dopant profiles near the semiconductor–oxide interface are critical for microelectronic device performance. As the incorporation of Si 1−x Ge x into transistors continues to increase, it is necessary to understand the behavior of dopants in Si 1−x Ge x . In this paper, the diffusion and electrical activation of phosphorus within a strained, single-crystal Si 0.7 Ge 0.3 layer on Si during oxidation are reported. Both layers were uniformly doped, in situ, with an average phosphorus concentration of 4 × 10 19 atoms/cm 3 . After high-temperature oxidation, secondary ion mass spectrometry measurements revealed that the bulk of the phosphorus diffuses out of only the SiGe layer and segregates at the oxidizing SiGe–SiO 2 interface. Hall effect measurements corroborate the observed phosphorus loss and show that the phosphorus diffusing to the oxidizing interface is electrically inactive. Through density functional theory (DFT) calculations, it is shown that phosphorus interstitials prefer sites near the SiGe–SiO 2 interface. Finally, based on a combination of experimental data and DFT calculations, we propose that the phosphorus atoms are displaced from their lattice sites by Ge interstitials that are generated during SiGe oxidation. The phosphorus atoms then migrate toward the SiGe–SiO 2 interface through a novel mechanism of hopping between Ge sites as P–Ge split interstitials. Once they reach the interface, they are electrically inactive, potentially in the form of interstitial clusters or as part of the reconstructed interface or oxide.

Thornton, Chappel S.↗

A sub-pore model for multi-scale reaction–diffusion problems in porous media

Applications of reaction–diffusion systems in porous media pose a challenging problem for computational modeling approaches due to their multi-physics and multi-scale nature. The length scales usually span 3–4 orders of magnitude while physical phenomena involved include heat and mass transfer processes, and surface reactions. In this paper, a novel methodology that accounts for all the length scales and physical phenomena involved in a single framework is described. A length scale based dual approach is proposed – the larger pore channels (macro-pores) are resolved using conventional numerical techniques and a novel ‘sub-pore’ model is used to account for the unresolved pore channels (sub-pores) and the important physics therein. The porous network in the sub-pore system is composed of a fractal-like hierarchical system of straight cylindrical pores. Simplified governing equations for mass and energy transport are solved within the sub-pore system along with a reaction kinetics model to account for surface adsorption. An implicit coupling strategy is used to couple the macro-pore and the sub-pore systems so as to ensure conservation. The developed methodology is then applied to a few test cases and it is established that the proposed framework is necessary for problems where the adsorption time scale is much smaller than (diffusion-limited) or comparable to the diffusion time scale. Furthermore, it is also demonstrated that the framework can be potentially used to model the network of porous channels in its entirety thus significantly reducing computational costs.

36 MATERIALS SCIENCE↗

Diffusion and transport in locally disordered driven lattices

We study the effect of disorder on the particle density evolution in a classical Hamiltonian driven lattice setup. If the disorder is localized within a finite sub-domain of the lattice, the emergence of strong tails in the density distribution which even increases towards larger positions is shown, thus yielding a highly non-Gaussian particle density evolution. As the key underlying mechanism, we identify the conversion between different components of the unperturbed systems mixed phase space which is induced by the disorder. Based on the introduction of individual conversion rates between chaotic and regular components, a theoretical model is developed which correctly predicts the scaling of the particle density. The effect of disorder on the transport properties is studied where a significant enhancement of the transport for cases of localized disorder is shown, thereby contrasting strongly the merely weak modification of the transport for global disorder.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Control of light diffusion in a disordered photonic waveguide

We control the diffusion of light in a disordered photonic waveguide by modulating the waveguide geometry. In a single waveguide of varying cross-section, the diffusion coefficient changes spatially in two dimensions due to localization effects. The intensity distribution inside the waveguide agrees with the prediction of the self-consistent theory of localization. Our work shows that wave diffusion can be efficiently manipulated without modifying the structural disorder.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Spatiotemporal Monte Carlo transport methods in x-ray semiconductor detectors: Application to pulse-height spectroscopy in a-Se

Purpose: The authors describe a detailed Monte Carlo (MC) method for the coupled transport of ionizing particles and charge carriers in amorphous selenium (a-Se) semiconductor x-ray detectors, and model the effect of statistical variations on the detected signal. Methods: A detailed transport code was developed for modeling the signal formation process in semiconductor x-ray detectors. The charge transport routines include three-dimensional spatial and temporal models of electron-hole pair transport taking into account recombination and trapping. Many electron-hole pairs are created simultaneously in bursts from energy deposition events. Carrier transport processes include drift due to external field and Coulombic interactions, and diffusion due to Brownian motion. Results: Pulse-height spectra (PHS) have been simulated with different transport conditions for a range of monoenergetic incident x-ray energies and mammography radiation beam qualities. Two methods for calculating Swank factors from simulated PHS are shown, one using the entire PHS distribution, and the other using the photopeak. The latter ignores contributions from Compton scattering and K-fluorescence. Comparisons differ by approximately 2% between experimental measurements and simulations. Conclusions: The a-Se x-ray detector PHS responses simulated in this work include three-dimensional spatial and temporal transport of electron-hole pairs. These PHS were used to calculate the Swank factor and compare it with experimental measurements. The Swank factor was shown to be a function of x-ray energy and applied electric field. Trapping and recombination models are all shown to affect the Swank factor.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

Accurate reaction-diffusion operator splitting on tetrahedral meshes for parallel stochastic molecular simulations

Spatial stochastic molecular simulations in biology are limited by the intense computation required to track molecules in space either in a discrete time or discrete space framework, which has led to the development of parallel methods that can take advantage of the power of modern supercomputers in recent years. We systematically test suggested components of stochastic reaction-diffusion operator splitting in the literature and discuss their effects on accuracy. We introduce an operator splitting implementation for irregular meshes that enhances accuracy with minimal performance cost. We test a range of models in small-scale MPI simulations from simple diffusion models to realistic biological models and find that multi-dimensional geometry partitioning is an important consideration for optimum performance. We demonstrate performance gains of 1-3 orders of magnitude in the parallel implementation, with peak performance strongly dependent on model specification.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Grain boundary barrier modification due to coupling effect of crystal polar field and water molecular dipole in ZnO-based structures

Surface water molecules induced grain boundaries (GBs) barrier modification was investigated in ZnO and ZnMgO/ZnO films. Tunable electronic transport properties of the samples by water were characterized via a field effect transistor (FET) device structure. The FETs fabricated from polar C-plane ZnO and ZnMgO/ZnO films that have lots of GBs exhibited obvious double Schottky-like current-voltage property, whereas that fabricated from nonpolar M-plane samples with GBs and ZnO bulk single-crystal had no obvious conduction modulation effects. Physically, these hallmark properties are supposed to be caused by the electrostatical coupling effect of crystal polar field and molecular dipole on GBs barrier.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Effect of asymmetric concentration profile on thermal conductivity in Ge/SiGe superlattices

The effect of the chemical composition in Si/Ge-based superlattices on their thermal conductivity has been investigated using molecular dynamics simulations. Simulation cells of Ge/SiGe superlattices have been generated with different concentration profiles such that the Si concentration follows a step-like, a tooth-saw, a Gaussian, and a gamma-type function in direction of the heat flux. The step-like and tooth-saw profiles mimic ideally sharp interfaces, whereas Gaussian and gamma-type profiles are smooth functions imitating atomic diffusion at the interface as obtained experimentally. Symmetry effects have been investigated comparing the symmetric profiles of the step-like and the Gaussian function to the asymmetric profiles of the tooth-saw and the gamma-type function. At longer sample length and similar degree of interdiffusion, the thermal conductivity is found to be lower in asymmetric profiles. Furthermore, it is found that with smooth concentration profiles where atomic diffusion at the interface takes place the thermal conductivity is higher compared to systems with atomically sharp concentration profiles.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Phase field modelling of stressed grain growth: Analytical study and the effect of microstructural length scale

We establish the correlation between the diffuse interface and sharp interface descriptions for stressed grain boundary migration by presenting analytical solutions for stressed migration of a circular grain boundary in a bicrystalline phase field domain. The validity and accuracy of the phase field model is investigated by comparing the phase field simulation results against analytical solutions. The phase field model can reproduce precise boundary kinetics and stress evolution provided that a thermodynamically consistent theory and proper expressions for model parameters in terms of physical material properties are employed. Quantitative phase field simulations are then employed to investigate the effect of microstructural length scale on microstructure and texture evolution by stressed grain growth in an elastically deformed polycrystalline aggregate. The simulation results reveal a transitional behaviour from normal to abnormal grain growth by increasing the microstructural length scale.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Heat conduction in an irregular magnetic field. Part 2. Heat transport as a measure of the effective non-integrable volume

Given the large anisotropy of transport processes in magnetized plasmas, the magnetic field structure can strongly impact heat diffusion: magnetic surfaces and cantori form barriers to transport while chaotic layers and island structures can degrade confinement. When a small but non-zero amount of perpendicular diffusion is included, the structure of the magnetic field becomes less important, allowing pressure gradients to be supported across chaotic regions and island chains. We introduce a metric for the effective volume over which the local parallel diffusion dominates based on the solution to the anisotropic heat diffusion equation. To validate this metric, we consider model fields with a single island chain and a strongly chaotic layer for which analytic predictions of the relative parallel and perpendicular transport can be made. We also analyse critically chaotic fields produced from different sets of perturbations, highlighting the impact of the mode number spectrum on the heat transport. Our results indicate that this metric coincides with the effective volume of non-integrability in the limit $\kappa _{\perp } \rightarrow 0$ , where $\kappa_{\perp}$ is the perpendicular diffusion coefficient. We propose that this metric be used to assess the impact of non-integrability on the heat transport in stellarator equilibria.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Centrifugal particle confinement in mirror geometry

The use of supersonic rotation of a plasma in mirror geometry has distinct advantages for thermonuclear fusion. The device is steady state, there are no disruptions, the loss cone is almost closed, sheared rotation stabilizes magnetohydrodynamic instabilities as well as plasma turbulence, there are no runaway electrons, and the coil configuration is simple. In this work, we examine the effect of rotation on mirror confinement using a full cyclotron orbit code. The full cyclotron simulations give a much more complete description of the particle energy distribution and losses than the use of guiding center equations. Both collisionless loss as a function of rotation and the effect of collisions are investigated. Although the cross field diffusion is classical, we find that the local rotating Maxwellian is increased to higher energy, increasing the fusion rate and also enhancing the radial diffusion. We find a loss channel not envisioned with a guiding center treatment, but a design can be chosen that can satisfy the Lawson criterion for ions. Of course, the rotation has a minimal effect on the alpha particle birth distribution, so there is initially loss through the usual loss cone, just as in a mirror with no rotation. However after this loss, the alphas slow down on the electrons with little pitch angle scattering until reaching low energy, so over half of the initial alpha energy is transferred to the electrons. The important problem of energy confinement, with losses primarily through the electron channel, is not addressed in this work. In conclusion, we also discuss the use of rotating mirror geometry to produce an ion thruster.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Atomic Fermi gas in the unitary limit by quantum Monte Carlo methods: Effects of the interaction range

We calculate the ground-state properties of an unpolarized two-component Fermi gas with the aid of the diffusion quantum Monte Carlo (DMC) methods. Using an extrapolation to the zero effective range of the attractive two-particle interaction, we find E/E{sub free} in the unitary limit to be 0.212(2), 0.407(2), 0.409(3), and 0.398(3) for 4, 14, 38, and 66 atoms, respectively. Our calculations indicate that the dependence of the total energy on the effective range of the interaction R{sub eff} is sizable and the extrapolation to R{sub eff}=0 is therefore important for reaching the true unitary limit. To test the quality of nodal surfaces and to estimate the impact of the fixed-node approximation, we perform released-node DMC calculations for 4 and 14 atoms. Analysis of the released-node and the fixed-node results suggests that the main sources of the fixed-node errors are long-range correlations, which are difficult to sample in the released-node approaches due to the fast growth of the bosonic noise. Besides energies, we evaluate the two-body density matrix and the condensate fraction. We find that the condensate fraction for the 66-atom system converges to 0.56(1) after the extrapolation to the zero interaction range.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

First-principles calculations for understanding microstructures and mechanical properties of co-sputtered Al alloys

Recent experimental studies show that co-sputtering solutes with Al, together, can refine columnar grain size around few tens of nanometers and promote the formation and enhance the stability of planar defects such as stacking faults (SFs) and grain boundaries (GBs) in Al alloys. These crystal defects and fine columnar grains result in high strength, enhanced strain hardening and thermal stability of Al alloys. Using first-principles density-functional theory (DFT) calculations, we studied the role of eleven solutes in tailoring kinetics and energetics of adatoms and clusters on Al {111} surface, stable and unstable stacking fault energies, and kinetic energy barriers for the migration of defects. The calculations show that most solutes can effectively refine columnar grain size by decreasing the diffusivity of adatoms and surface clusters. These solutes do not necessarily decrease the stacking fault energy of Al alloys, but reduce the formation energy of faulted surface clusters and increase the energy barriers for the recovery of faulted surface clusters. Correspondingly, the formation of SFs is kinetically promoted during sputtering. Furthermore, solutes are segregated into the core of Shockley partial dislocations and play a pinning effect on SFs, SF arrays and twin boundaries, enhancing the thermal stability of these crystal defects. These findings provide insights into the design of high-strength Al alloys for high-temperature applications.

36 MATERIALS SCIENCE↗

Transport and optical conductivity in the Hubbard model: A high-temperature expansion perspective

We derive analytical expressions for the spectral moments of the dynamical response functions of the Hubbard model using the high-temperature series expansion. We consider generic dimension d as well as the infinite- d limit, arbitrary electron density n, and both finite and infinite repulsion U. We use moment-reconstruction methods to obtain the one-electron spectral function, the self-energy, and the optical conductivity. They are all smooth functions at high temperature and, at large U, they are featureless with characteristic widths of the order of the lattice hopping parameter t. In the infinite-d limit, we compare the series expansion results with accurate numerical renormalization group and interaction expansion quantum Monte Carlo results. We find excellent agreement down to surprisingly low temperatures, throughout most of the bad-metal regime, which applies for T≳ (1 - n)D, the Brinkman-Rice scale. The resistivity increases linearly in T at high temperature without saturation. This results from the 1/T behavior of the compressibility or kinetic energy, which play the role of the effective carrier number. In contrast, the scattering time (or diffusion constant) saturates at high T. We find that σ( n,T) ≈ (1 - n)σ(n = 0,T) to a very good approximation for all n, with σ(n = 0,T) ∝ t/T at high temperatures. The saturation at small n occurs due to a compensation between the density dependence of the effective number of carriers and that of the scattering time. The T dependence of the resistivity displays a kneelike feature which signals a crossover to the intermediate-temperature regime where the diffusion constant (or scattering time) starts increasing with decreasing T. At high temperatures, the thermopower obeys the Heikes formula, while the Wiedemann-Franz law is violated with the Lorenz number vanishing as 1/T 2 . The relevance of our calculations to experiments probing high-temperature transport in materials with strong electronic correlations or ultracold atomic gases in an optical lattice is briefly discussed.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Application of Perona Malik anisotropic diffusion on digital radiographic image

Perona Malik Anisotropic Diffusion (PMAD) is a very useful and efficient denoising technique if the parameters are properly selected. Overestimating the parameters may cause oversmoothed and underestimating it may leave unfiltered noise. This makes the selection of parameters a crucial process. In this paper the PMAD model is solved using a finite difference scheme The discretized model is evaluated using different diffusion coefficient of exponential and quadratic on defective radiographic images in terms of quality and efficiency. In the application of the PMAD model on image data, a set of defective radiographic images of welding is used as input data. Peak Signal to Noise Ratio (PSNR), Structural Similarity Measure (SSIM) and temporal time are used to evaluate the performance of the model. The implementation of the experiment has been carried out using MATLAB R2009a. In terms of quality, results show that the Quadratic Diffusion Coefficient Function (QDCF) provides better results compared with the Exponential Diffusion Coefficient Function (EDCF). In conclusion, the denoising effect using PMAD model based on finite difference scheme shows able to improve image quality by removing noise in the defective radiographic image.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Direct Measurement of Room-Temperature Nondiffusive Thermal Transport Over Micron Distances in a Silicon Membrane

The “textbook” phonon mean free path of heat carrying phonons in silicon at room temperature is ${\sim}40\text{ }\text{ }\mathrm{nm}$. However, a large contribution to the thermal conductivity comes from low-frequency phonons with much longer mean free paths. We present here a simple experiment demonstrating that room-temperature thermal transport in Si significantly deviates from the diffusion model already at micron distances. Absorption of crossed laser pulses in a freestanding silicon membrane sets up a sinusoidal temperature profile that is monitored via diffraction of a probe laser beam. By changing the period of the thermal grating we vary the heat transport distance within the range ${\sim}1-10\text{ }\text{ }{\mu}\mathrm{m}$. At small distances, we observe a reduction in the effective thermal conductivity indicating a transition from the diffusive to the ballistic transport regime for the low-frequency part of the phonon spectrum.

74 ATOMIC AND MOLECULAR PHYSICS↗