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At least 1,657 records · Page 92

Stabilities and defect-mediated lithium-ion conduction in a ground state cubic Li 3 N structure

A stable ground state structure with cubic symmetry of Li 3 N (c-Li 3 N) is found by ab initio initially symmetric random-generated crystal structure search method. Gibbs free energy, calculated within quasi-harmonic approximation, shows that c-Li 3 N is the ground state structure for a wide range of temperature. The c-Li 3 N structure has a negative thermal expansion coefficient at temperatures lower than room temperature, due mainly to two transverse acoustic phonon modes. This c-Li 3 N phase is a semiconductor with an indirect band gap of 1.90 eV within hybrid density functional calculation. We also investigate the migration and energetics of native point defects in c-Li 3 N, including lithium and nitrogen vacancies, interstitials, and anti-site defects. Lithium interstitials are found to have a very low migration barrier (~0.12 eV) and the lowest formation energy among all possible defects. Thus, the ionic conduction in c-Li 3 N is expected to occur via an interstitial mechanism, in contrast to that in the well-known α-Li 3 N phase which occurs via a vacancy mechanism.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Irradiation-induced grain growth and defect evolution in nanocrystalline zirconia with doped grain boundaries

Grain boundaries are effective sinks for radiation-induced defects, ultimately impacting the radiation tolerance of nanocrystalline materials (dense materials with nanosized grains) against net defect accumulation. However, irradiation-induced grain growth leads to grain boundary area decrease, shortening potential benefits of nanostructures. A possible approach to mitigate this is the introduction of dopants to target a decrease in grain boundary mobility or a reduction in grain boundary energy to eliminate driving forces for grain growth (using similar strategies as to control thermal growth). Here, in this study, we tested this concept in nanocrystalline zirconia doped with lanthanum. Although the dopant is observed to segregate to the grain boundaries, causing grain boundary energy decrease and promoting dragging forces for thermally activated boundary movement, irradiation induced grain growth could not be avoided under heavy ion irradiation, suggesting a different growth mechanism as compared to thermal growth. Furthermore, it is apparent that reducing the grain boundary energy reduced the effectiveness of the grain boundary as sinks, and the number of defects in the doped material is higher than in undoped (La-free) YSZ.

36 MATERIALS SCIENCE↗

Collective nonlinear electric polarization via defect-driven local symmetry breaking

In this work, we report the defect-mediated, abnormal non-linear polarization behavior observed in centrosymmetric rutile TiO 2 where less than 1 at% of sterically mismatched Mg 2+ ions are introduced to create ferroelectric-like polarization hysteresis loops. It is found that the defect cluster produces a dipole moment exceeding 6 Debye, with a rotatable component. Such a polarization is further enhanced by the displacement of neighboring Ti 4+ ions. The coupling between such defect-driven symmetry-breaking regions generates a collective nonlinear electrical polarization state that persists to high temperatures. More importantly, an observation of abnormal bias shift of polarization hysteresis suggests an antiparallel alignment of certain dipoles frozen relative to the external poling electric field, which is associated with oxygen vacancy hopping. This result challenges the long-standing notion of parallel alignment of dipoles with the external electric field in ferroelectrics. Finally, this work also reveals an unexpected new form of non-linear dielectric polarization (non-ferroelectricity) in solid-state materials.

36 MATERIALS SCIENCE↗

Intrinsic limits of defect-state photoluminescence dynamics in functionalized carbon nanotubes

Defect states introduced to single wall carbon nanotubes (SWCNTs) by covalent functionalization give rise to novel photophysics and are showing promise as sources of room-temperature quantum emission of interest for quantum information technologies. Evaluation of their ultimate potential for such needs requires a knowledge of intrinsic dynamic and coherence behaviors. Here we probe population relaxation and dephasing time ( T 1 and T 2 , respectively) of defect states following deposition of functionalized SWCNTs on polystyrene substrates that are subjected to an isopropanol rinse to remove surfactant. Low-temperature (4 K) photo-luminescence linewidths (~100 μeV) following surfactant removal are a factor of ten narrower than those for unrinsed SWCNTs. Measured recombination lifetimes, on the order of 1.5 ns, compare well with those estimated from DFT calculations, indicating that the intrinsic radiatively-limited lifetime is approached following this sample treatment. Dephasing times evaluated directly through an interferometric approach compare closely to those established by photoluminescence linewidths. Dephasing times as high as 12 ps are found; a factor of up to 6 times greater than those evaluated for band-edge exciton states. In conclusion, such enhancement of dephasing and photoluminescence lifetime behavior is a direct consequence of exciton localization at the SWCNT defect sites.

36 MATERIALS SCIENCE↗

Electronic shell structures, self-trapped excitons, and defect-bound excitons in Li 2 B 12 H 12

First-principles studies of electronic structures, excitons, and defects in Li 2 B 12 H 12 reveal unique photophysical properties of Li 2 B 12 H 12 and its potential as a neutron scintillator material. We identify the electronic shell structure in (B 12 H 12 ) 2- , which gives rise to strong chemical stability of (B 12 H 12 ) 2- and a large band gap of Li 2 B 12 H 12 . Based on hybrid functional calculations, we show that excitons in Li 2 B 12 H 12 are strongly self-trapped and predict that the exciton excitation and emission are both in the UV range and are not related to the bright blue emission observed in the experiment. The experimentally observed blue emission in Li 2 B 12 H 12 is likely due to the emission of excitons bound to hydrogen vacancies. The calculated strong localization and large exciton trapping energy at hydrogen vacancies indicate enhanced radiative recombination, while the calculated large Stokes shift suggests that the self-absorption and the resonance transfer of the excitation energy may be suppressed. These properties should promote efficient defect emission at room temperature. The efficient defect emission, combined with the large thermal neutron capture cross-section by Li and B and the efficient energy transfer between fast neutrons and H, suggests potential applications of Li 2 B 12 H 12 as a thermal or fast neutron scintillator. Optical characterization of VH may also be used to monitor H and Li concentrations in Li 2 B 12 H 12 -based hydrogen storage materials and solid-state electrolytes in Li batteries.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

High Purity and Reduced Defects Hard Carbon Synthesis for Sodium-Ion Batteries

Hard carbon (HC) is the state-of-the-art anode material for sodium-ion batteries; however, the high-temperature carbonization of precursors (>1100 °C) often introduces inorganic impurities, an issue that remains largely underexplored. Here, we report a simple synthesis strategy for producing high purity HC by carbonizing a cellulose-derived precursor at 1400 °C under a slightly reducing Ar–H2 atmosphere on a graphite substrate, thereby eliminating the aluminum contamination observed during conventional carbonization on an alumina substrate under Ar. In addition, the modified synthetic condition reduces surface defects and the concentration of oxygen-containing functional groups, thereby altering the interphase formation on the HC surface. At a current density of 20 mA g−1, the impurity-rich HC exhibited an initial coulombic efficiency (ICE) of 74.1% and a reversible capacity of 248.8 mAh g−1. In sharp contrast, the high purity HC delivered a significantly improved ICE of 90.1% and a reversible capacity of 345.1 mAh g−1. These results underscore the critical importance of impurity and defect control during HC synthesis and highlight the clear electrochemical advantages of high purity HC with reduced defects for sodium-ion battery anodes.

Harshita, Lohanni↗

Antisite Defects In La0.7Sr0.3MnO3 and La0.7Sr0.3FeO3

Complex oxide thin films and superlattices with the perovskite ABO3 structure have been found to possess novel functional properties. Here, we present our discovery of antisite defects, La ions in Fe(Mn) sites (denoted as LaB), in a La0.7Sr0.3MnO3/La0.7Sr0.3FeO3 superlattice. The antisite defect was directly characterized by atomic resolution Z-contrast imaging and the composition and electronic structure was analyzed by electron energy loss spectroscopy in an aberration-corrected scanning transmission electron microscope. Density functional theory was used to calculate the formation energy, showing that the formation of the detected antisite defects is a consequence of the slightly reducing conditions during sample growth.

Gu, Meng↗

Defect mitigation by ion induced amorphousization and solid-phase epitaxy

Ion implantation is a common technique in the semiconductor industry used to modify the electrical properties of materials, usually silicon. Some dopant ions are sufficiently light, such as boron, that they do not create a continuous amorphous layer in silicon over the range of the ions. In the presence of such a layer, most of the ioninduced damage can be removed by solid-phase epitaxy growth (SPEG), which results in recrystallization of the amorphous damage. However, end-of-range defects at the amorphous-crystal interface give rise to threading dislocations during SPEG that degrade the quality of the recrytallized Si. We have studied the end of range defects in silicon with three different implantations. The first was with 80 keV {sup 30}Si with a dose of 3 Multiplication-Sign 10{sup 15} Si/cm{sup 2}, and the second was with 100 keV {sup 72}Ge at a dose of 1 Multiplication-Sign 10{sup 15} Ge/cm{sup 2}, and the third was a double implant of 100 keV {sup 72}Ge at a dose of 1 Multiplication-Sign 10{sup 15} Ge/cm{sup 2} followed by 340 keV {sup 28}Si at a dose of 3 Multiplication-Sign 10{sup 14} Si/cm{sup 2}. SPEG was done at 650 Degree-Sign C to recrystalize the implanted samples, and the end of range defects were studied using channeled Rutherford Backscattering Spectrometry (RBS-c). The effects of photon-assisted hydrogenation on amorphization and recrystallization were also studied.

36 MATERIALS SCIENCE↗

Reduction of defect formation in amorphous indium-gallium-zinc-oxide thin film transistors by N{sub 2}O plasma treatment

An abnormal sub-threshold leakage current is observed at high temperature in amorphous indium-gallium-zinc-oxide thin film transistors (a-IGZO TFTs). This phenomenon occurs due to a reduced number of defects in the device's a-IGZO active layer after the device has undergone N{sub 2}O plasma treatment. Experimental verification shows that the N{sub 2}O plasma treatment enhances the thin film bonding strength, thereby suppressing the formation of temperature-dependent holes, which are generated above 400 K by oxygen atoms leaving their original sites. The N{sub 2}O plasma treatment devices have better stability performance than as-fabricated devices. The results suggest that the density of defects for a-IGZO TFTs with N{sub 2}O plasma treatment is much lower than that in as-fabricated devices. The N{sub 2}O plasma treatment repairs the defects and suppresses temperature-dependent sub-threshold leakage current.

36 MATERIALS SCIENCE↗

In-growth of an electrically active defect in high-purity silicon after proton irradiation

Defect-related energy levels in the lower half of the band gap of silicon have been studied with transient-capacitance techniques in high-purity, carbon and oxygen lean, plasma-enhanced chemical-vapor deposition grown, n-and p-type silicon layers after 2-MeV proton irradiations at temperatures at or just below room temperature. The in-growth of a distinct line in deep-level transient spectroscopy spectra, corresponding to a level in the band gap at E{sub V} + 0.357 eV where E{sub V} is the energy of the valence band edge, takes place for anneal temperatures at around room temperature with an activation energy of 0.95 ± 0.08 eV. The line disappears at an anneal temperature of around 450 K. The corresponding defect is demonstrated not to contain boron, carbon, oxygen, or phosphorus. Possible defect candidates are discussed.

36 MATERIALS SCIENCE↗

Effects of interface bonding and defects on boron diffusion at Si/SiO{sub 2} interface

We perform first-principles density functional calculations to find the migration pathway and barrier for B diffusion at the Si/SiO{sub 2} interface. For various interface models, in which crystalline α-quartz or amorphous silica (a-SiO{sub 2}) is placed on Si, we examine stable and metastable configurations of B-related defects which play a role in B diffusion. While a substitutional B alone is immobile in Si, it tends to diffuse to the interface via an interstitialcy mechanism in the presence of a self-interstitial and then changes into an interstitial B in oxide via a kick-out mechanism, leaving the self-interstitial at the interface. At the defect-free interface, where bridging O atoms are inserted to remove interface dangling bonds, an interstitial B prefers to intervene between the interface Si and bridging O atoms and subsequently diffuses through the hollow space or along the network of the Si-O-Si bonds in oxide. The overall migration barriers are calculated to be 2.02–2.12 eV at the Si/α-quartz interface, while they lie in the range of 2.04 ± 0.44 eV at the Si/a-SiO{sub 2} interface, similar to that in α-quartz. The migration pathway and barrier are not significantly affected by interface defects such as suboxide bond and O protrusion, while dangling bonds in the suboxide region can increase the migration barrier by about 1.5 eV. The result that the interface generally does not hinder the B diffusion from Si to SiO{sub 2} assists in understanding the underlying mechanism for B segregation which commonly occurs at the Si/SiO{sub 2} interface.

36 MATERIALS SCIENCE↗

Enhancement of photoluminescence from defect states in ZnS random photonic crystal: An effect of electronic and photonic mode coupling

This paper reports on the enhanced defect state emission from ZnS in the form of a random photonic crystal (RPC) medium. ZnS photonic crystals with varied randomness are fabricated by colloidal self assembly of ZnS nanospheres (215 ± 10 nm). Reflection and transmission studies reveal mid band gap wavelength at ∼435 nm. The band structure calculated for BCC lattice with reduced packing fraction (53%) is in good agreement with experimental results. The reflection due to the photonic band gap diminishes with increased randomness in the nanosphere arrangement. The features of fluorescence from ZnS are modified in the RPC medium, resulting in suppression at wavelengths in the photonic band gap region and an enhancement at band edge wavelengths of 415 and 468 nm. This enhancement becomes less prominent with increasing randomness in the structure. Interestingly these two modes correspond to the electronic defect states of ZnS. Emission enhancement is shown to be due to the strong coupling of electronic defect states and photonic band edge states which is facilitated by randomly scattering slow Bloch modes in the ZnS RPC. Fabrication of RPCs by colloidal self-assembly with specifically designed degrees of randomness (leading to controllable features of emission) provides scope for the design of low threshold random lasing systems.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Probing graphene defects and estimating graphene quality with optical microscopy

We report a simple and accurate method for detecting graphene defects that utilizes the mild, dry annealing of graphene/Cu films in air. In contrast to previously reported techniques, our simple approach with optical microscopy can determine the density and degree of dislocation of defects in a graphene film without inducing water-related damage or functionalization. Scanning electron microscopy, confocal Raman and atomic force microscopy, and X-ray photoelectron spectroscopy analysis were performed to demonstrate that our nondestructive approach to characterizing graphene defects with optimized thermal annealing provides rapid and comprehensive determinations of graphene quality.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Gamma ray irradiated silicon nanowires: An effective model to investigate defects at the interface of Si/SiOx

The effect of gamma ray irradiation on silicon nanowires was investigated. Here, an additional defect emerged in the gamma-ray-irradiated silicon nanowires and was confirmed with electron spin resonance spectra. {sup 29}Si nuclear magnetic resonance spectroscopy showed that irradiation doses had influence on the Q{sup 4} unit structure. This phenomenon indicated that the unique core/shell structure of silicon nanowires might contribute to induce metastable defects under gamma ray irradiation, which served as a satisfactory model to investigate defects at the interface of Si/SiOx.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Structural defects in epitaxial graphene layers synthesized on C-terminated 4H-SiC (0001{sup ¯}) surface—Transmission electron microscopy and density functional theory studies

The principal structural defects in graphene multilayers synthesized on the carbon-terminated face of a 4H-SiC (0001{sup ¯}) substrate were investigated using the high-resolution transmission electron microscopy. The analyzed systems include a wide variety of defected structures such as edge dislocations, rotational multilayers, and grain boundaries. It was shown that graphene layers are composed of grains of the size of several nanometres or larger; they differ in a relative rotation by large angles, close to 30°. The structure of graphene multilayers results from the synthesis on a SiC (0001{sup ¯}) surface, which proceeds via intensive nucleation of new graphene layers that coalesce under various angles creating an immense orientational disorder. Structural defects are associated with a built-in strain resulting from a lattice mismatch between the SiC substrate and the graphene layers. The density functional theory data show that the high-angular disorder of AB stacked bi-layers is not restoring the hexagonal symmetry of the lattice.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

High-resolution spectroscopy and quantum-defect model for the gerade triplet np and nf Rydberg states of He{sub 2}

Photoionization spectra and Rydberg-state-resolved threshold-ionization spectra of the gerade triplet np Rydberg states of {sup 4}He{sub 2} located in the vicinity of the X{sup +2}Σ{sub u}{sup +}(ν{sup +} =0) ionization threshold were recorded from the 2sσa{sup 3}Σ{sub u}{sup +} metastable state. An accuracy of 0.01 cm{sup −1} was achieved for the experimental term values of the observed Rydberg states. The data were combined with spectroscopic data on low-lying triplet np and nf Rydberg states from the literature to derive energy- and internuclear-distance-dependent eigenquantum-defect parameters of multichannel quantum-defect theory (MQDT). The MQDT calculations reproduce the experimental data within their experimental uncertainties and enabled the derivation of potential-energy curves for the lowest triplet p Rydberg states (n = 2–5) of He{sub 2}. The eigenquantum-defect parameters describing the p -f interaction were found to be larger than 0.002 at the energies corresponding to the high-n Rydberg states, so that the p -f interaction plays an important role in the autoionization dynamics of np Rydberg states with ν{sup +} = 0. By extrapolating the experimental term values of triplet np Rydberg states of {sup 4}He{sub 2} in the range of principal quantum number n between 87 and 110, the positions of the (ν{sup +} = 0, N{sup +} = 3) and (ν{sup +} = 0, N{sup +} = 5) levels of the ground state of {sup 4}He{sub 2}{sup +} were determined to lie 70.937(3) cm{sup −1} and 198.369(6) cm{sup −1}, respectively, above the (ν{sup +} = 0, N{sup +} = 1) ground rotational level.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Unusual defect physics in CH{sub 3}NH{sub 3}PbI{sub 3} perovskite solar cell absorber

Thin-film solar cells based on Methylammonium triiodideplumbate (CH{sub 3}NH{sub 3}PbI{sub 3}) halide perovskites have recently shown remarkable performance. First-principle calculations show that CH{sub 3}NH{sub 3}PbI{sub 3} has unusual defect physics: (i) Different from common p-type thin-film solar cell absorbers, it exhibits flexible conductivity from good p-type, intrinsic to good n-type depending on the growth conditions; (ii) Dominant intrinsic defects create only shallow levels, which partially explain the long electron-hole diffusion length and high open-circuit voltage in solar cell. The unusual defect properties can be attributed to the strong Pb lone-pair s orbital and I p orbital antibonding coupling and the high ionicity of CH{sub 3}NH{sub 3}PbI{sub 3}.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Investigation of defects in In–Ga–Zn oxide thin film using electron spin resonance signals

In–Ga–Zn oxide (IGZO) is a next-generation semiconductor material seen as an alternative to silicon. Despite the importance of the controllability of characteristics and the reliability of devices, defects in IGZO have not been fully understood. We investigated defects in IGZO thin films using electron spin resonance (ESR) spectroscopy. In as-sputtered IGZO thin films, we observed an ESR signal which had a g-value of g = 2.010, and the signal was found to disappear under thermal treatment. Annealing in a reductive atmosphere, such as N{sub 2} atmosphere, generated an ESR signal with g = 1.932 in IGZO thin films. The temperature dependence of the latter signal suggests that the signal is induced by delocalized unpaired electrons (i.e., conduction electrons). In fact, a comparison between the conductivity and ESR signal intensity revealed that the signal's intensity is related to the number of conduction electrons in the IGZO thin film. The signal's intensity did not increase with oxygen vacancy alone but also with increases in both oxygen vacancy and hydrogen concentration. In addition, first-principle calculation suggests that the conduction electrons in IGZO may be generated by defects that occur when hydrogen atoms are inserted into oxygen vacancies.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗