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At least 1,657 records · Page 92

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NASA NTRS1995

On-wafer, cryogenic characterization of ultra-low noise HEMT devices

Significant advances in the development of high electron-mobility field-effect transistors (HEMT's) have resulted in cryogenic, low-noise amplifiers (LNA's) whose noise temperatures are within an order of magnitude of the quantum noise limit (hf/k). Further advances in HEMT technology at cryogenic temperatures may eventually lead to the replacement of maser and superconducting insulator superconducting front ends in the 1- to 100-GHz frequency band. Key to identification of the best HEMT's and optimization of cryogenic LNA's are accurate and repeatable device measurements at cryogenic temperatures. This article describes the design and operation of a cryogenic coplanar waveguide probe system for the characterization and modeling of advanced semiconductor transistors at cryogenic temperatures. Results on advanced HEMT devices are presented to illustrate the utility of the measurement system.

Bautista, J. J.↗

NASA NTRS1994

Performance issues for iterative solvers in device simulation

Due to memory limitations, iterative methods have become the method of choice for large scale semiconductor device simulation. However, it is well known that these methods still suffer from reliability problems. The linear systems which appear in numerical simulation of semiconductor devices are notoriously ill-conditioned. In order to produce robust algorithms for practical problems, careful attention must be given to many implementation issues. This paper concentrates on strategies for developing robust preconditioners. In addition, effective data structures and convergence check issues are also discussed. These algorithms are compared with a standard direct sparse matrix solver on a variety of problems.

Fan, Qing↗

NASA NTRS1992

Materials, structures, and devices for high-speed electronics

Advances in materials, devices, and instrumentation made under this grant began with ex-situ null ellipsometric measurements of simple dielectric films on bulk substrates. Today highly automated and rapid spectroscopic ellipsometers are used for ex-situ characterization of very complex multilayer epitaxial structures. Even more impressive is the in-situ capability, not only for characterization but also for the actual control of the growth and etching of epitaxial layers. Spectroscopic ellipsometry has expanded from the research lab to become an integral part of the production of materials and structures for state of the art high speed devices. Along the way, it has contributed much to our understanding of the growth characteristics and material properties. The following areas of research are summarized: Si3N4 on GaAs, null ellipsometry; diamondlike carbon films; variable angle spectroscopic ellipsometry (VASE) development; GaAs-AlGaAs heterostructures; Ta-Cu diffusion barrier films on GaAs; GaAs-AlGaAs superlattices and multiple quantum wells; superconductivity; in situ elevated temperature measurements of III-V's; optical constants of thermodynamically stable InGaAs; doping dependence of optical constants of GaAs; in situ ellipsometric studies of III-V epitaxial growth; photothermal spectroscopy; microellipsometry; and Si passivation and Si/SiGe strained-layer superlattices.

Woollam, John A.↗

NASA NTRS1995

Device and method for screening crystallization conditions in solution crystal growth

A device and method for detecting optimum protein crystallization conditions and for growing protein crystals in either 1g or microgravity environments comprising a housing, defining at least one pair of chambers for containing crystallization solutions is presented. The housing further defines an orifice therein for providing fluid communication between the chambers. The orifice is adapted to receive a tube which contains a gelling substance for limiting the rate of diffusive mixing of the crystallization solutions. The solutions are diffusively mixed over a period of time defined by the quantity of gelling substance sufficient to achieve equilibration and to substantially reduce density driven convection disturbances therein. The device further includes endcaps to seal the first and second chambers. One of the endcaps includes a dialysis chamber which contains protein solution in which protein crystals are grown. Once the endcaps are in place, the protein solution is exposed to the crystallization solutions wherein the solubility of the protein solution is reduced at a rate responsive to the rate of diffusive mixing of the crystallization solutions. This allows for a controlled approach to supersaturation and allows for screening of crystal growth conditions at preselected intervals.

Carter, Daniel C.↗

NASA NTRS1994

Pressure loss modulus correlation for Delta p across uniformly distributed-loss devices

A dimensionless group, called a pressure loss modulus (N(sub PL)), is introduced that, in conjunction with an appropriately defined Reynolds number, is of considerable engineering utility in correlating steady-state Delta p vs flow calibration data and subsequently as a predictor, using the same or a different fluid, in uniformly distributed pressure loss devices. It is particularly useful under operation in the transition regime. Applications of this simple bivariate correlation to three diverse devices of particular interest for small liquid rocket engine fluid systems are discussed: large L/D capillary tube restrictors, packed granular catalyst beds, and stacked vortex-loss disk restrictors.

Nunz, Gregory J.↗

NASA NTRS1995

Aerodynamic Control-Augmentation Devices For Saturn-Class Launch Vehicles With Aft Centers Of Gravity

Report describes study of aerodynamic flight-control-augmentation devices proposed for use in increasing payload capabilities of future launch vehicles by allowing more aft centers of gravity. Proposed all-movable devices not only provide increased control authority during ascent trajectory, but also reduce engine gimballing requirements and enhance crew safety. Report proposes various aerodynamic control surfaces mounted fore and aft on Saturn-class launch vehicle.

Barret, Chris↗

NASA NTRS1995

Fiber-Optic Photoelastic Device Senses Pressure Of Hot Gas

Fiber-optic/photoelastic device measures gas pressures up to 600 psi at operating temperatures as high as 1,100 degrees C. Pressure on fused-silica sensing element gives rise to birefringence via photoelastic effect. Polarization of light changed by birefringence; change in polarization measured and used to infer pressure causing it. Device prototype of gas-pressure sensor for aircraft engine. Mounted in engine at or near desired measurement point, where it responds to both time-varying and steady components of pressure.

Redner, Alex S.↗

NASA NTRS1995

Better Ohmic Contacts For InP Semiconductor Devices

Four design modifications enable fabrication of improved ohmic contacts on InP-based semiconductor devices. First modification consists of insertion of layer of gold phosphide between n-doped InP and metal or other overlayer of contact material. Second, includes first modification plus use of particular metal overlayer to achieve very low contact resistivities. Third, also involves deposition of Au(2)P(3) interlayer; in addition, refractory metal (W or Ta) deposited to form contact overlayer. In fourth, contact layer of Auln alloy deposited directly on InP. Improved contacts exhibit low electrical resistances and fabricated without exposing devices to destructive predeposition or postdeposition treatments.

Weizer, Victor G.↗

NASA NTRS1995

Device For Sampling Surface Contamination

Specially designed cotton swab suitable for use in clean room. Contamination-sampling device improved version of basic cotton-tipped wooden applicator, designed for extreme cleanliness and to enhance utility for sampling according to exacting specifications. Device does not shed cotton and wood fibers.

Delgado, Felix A.↗

NASA NTRS1996

SNS Devices With Pinhole-Defined Active Regions

Superconductor/normal conductor/superconductor (SNS) microbridge devices with pinhole-defined active regions undergoing development. Device includes thin, electrically insulating layer deposited epitaxially, with controlled formation of pinholes, on one of two superconducting layers. Normally conducting metal deposited epitaxially in pinholes and on insulating layer, forming electrical contact between two superconducting layers. Junction resistances and maximum junction voltages expected to be increased.

Hunt, Brian D.↗

NASA NTRS1994

A very low shock alternative to conventional, pyrotechnically operated release devices

NiTiNOL is best known for its ability to remember a preset shape, even after being 'plastically' deformed. This is accomplished by heating the material to an elevated temperature up to 120 degrees C. However, NiTiNOL has other material and mechanical properties that provide a novel method of structural release. This combination of properties allows NiTiNOL to be used as a mechanical fuse between structural components. When electrical power is applied to the NiTiNOL fuse(s), the material is annealed reducing the mechanical strength to a small fraction of the as-wrought material. The preload then fractures the weakened NiTiNOL fuse(s) and releases the structure. This paper describes the mechanical characteristics of the NiTiNOL allow used in this invention, structural separation design concepts using the NiTiNOL material, and initial test data. Elimination of the safety hazard, high shock levels, and non-reusability inherent with pyrotechnic separation devices allows NiTiNOL actuated release devices to become a viable alternative for aerospace components and systems.

Robinson, Steven P.↗

NASA NTRS1996

Materials For Improved Josephson-Junction Devices

Number of superconductive, normally conductive, and insulating materials proposed for use in fabricating improved superconductor/insulator/superconductor (SIS) and superconductor/normal conductor/superconductor (SNS) electronic devices capable of operation at frequencies up into terahertz range. Such devices particularly useful as electrically nonlinear circuit elements of mixers and local oscillators in heterodyne receivers.

Vasquez, Richard P.↗

NASA NTRS1996

Thickness Measurement Device for Ice/Water Mixture

A device and method are provided for determining the thickness of an ice and water mixture accumulated on the outer surface of an object. First and second total impedance sensors are operated at first and second frequencies over which the dielectric constants for water and ice are substantially the same. Corresponding first and second AC total impedance measuring circuits are coupled to the first and second sensors to produce output voltages based on the total impedance changes sensed by the sensors. A processor is coupled to the first and second measuring circuits to generate a voltage ratio using the measured output voltages. The voltage ratio is indicative of the thickness of the ice and water mixture. The novelty of the present invention is the use of two frequencies and dual geometry impedance sensors in order to be sensitive to the formation of ice. Thus, critical situations created by the presence of solid ice can be averted. The device is simple and is easily incorporated into current technology thereby making its realization cost- effective.

Weinstein, Leonard M.↗

NASA NTRS1996

A Novel Photonic Clock and Carrier Recovery Device

As data communication rates climb toward ten Gb/s, clock recovery and synchronization become more difficult, if not impossible, using conventional electronic circuits. We present in this article experimental results of a high speed clock and carrier recovery using a novel device called a photonic oscillator that we recently developed in our laboratory. This device is capable of recovering clock signals up to 70 GHz. To recover the clock, the incoming data is injected into the photonic oscillator either through the optical injection port or the electrical injection port. The free running photonic oscillator is tuned to oscillate at a nominal frequency equal to the clock frequency of the incoming data. With the injection of the data, the photonic oscillator will be quickly locked to clock frequency of the data stream while rejecting other frequency components associated with the data. Consequently, the output of the locked photonic oscillator is a continuous periodical wave synchronized with the incoming data or simply the recovered clock. We have demonstrated a clock to spur ratio of more than 60 dB of the recovered clock using this technique. Similar to the clock recovery, the photonic oscillator can be used to recover a high frequency carrier degraded by noise and an improvement of about 50 dB in signal-to-noise ratio was demonstrated. The photonic oscillator has both electrical and optical inputs and outputs and can be directly interfaced with a photonic system without signal conversion. In addition to clock and carrier recovery, the photonic oscillator can also be used for (1) stable high frequency clock signal generation, (2) frequency multiplication, (3) square wave and comb frequency generation, and (4) photonic phase locked loop.

Yao, X. Steve↗

NASA NTRS1995

ZnO films on /001/-cut (110)-propagating GaAs substrates for surface acoustic wave device applications

A potential application for piezoelectric films substrates is the monolithic integration of surface acoustic wave (SAW) devices with GaAs electronics. Knowledge of the SAW properties of the layered structure is critical for the optimum and accurate design of such devices. The acoustic properties of ZnO films sputtered on /001/-cut group of (110) zone axes-propagating GaAs substrates are investigated in this article, including SAW velocity, effective piezoelectric coupling constant, propagation loss, diffraction, velocity surface, and reflectivity of shorted and open metallic gratings. The measurements of these essential SAW properties for the frequency range between 180 and 360 MHz have been performed using a knife-edge laser probe for film thicknesses over the range of 1.6-4 micron and with films of different grain sizes. The high quality of dc triode sputtered films was observed as evidenced by high K(sup 2) and low attenuation. The measurements of the velocity surface, which directly affects the SAW diffraction, on the bare and metalized ZnO on SiO2 or Si3N4 on /001/-cut GaAs samples are reported using two different techniques: (1) knife-edge laser probe, (2) line-focus-beam scanning acoustic microscope. It was found that near the group of (110) zone axes propagation direction, the focusing SAW property of the bare GaAs changes into a nonfocusing one for the layered structure, but a reversed phenomenon exists near the (100) direction. Furthermore, to some extent the diffraction of the substrate can be controlled with the film thickness. The reflectivity of shorted and open gratings are also analyzed and measured. Zero reflectivity is observed for a shorted grating. There is good agreement between the measured data and theoretical values.

Hickernell, Frederick S.↗

NASA NTRS1995

The Fundamentals of Using the Digital Micromirror Device (DMD(TM)) for Projection Display

Developed by Texas Instruments (TI) the digital micromirror device (DMD(tm)) is a quickly emerging and highly useful micro-electro-mechanical structures (MEMS) device. Using standard semiconductor fabrication technology, the DMD's simplicity in concept and design will provide advantageous solutions for many different applications. At the rudimentary level, the DMD is a precision, semiconductor light switch. In the initial commercial development of DMD technology, TI has concentrated on projection display and hardcopy. This paper will focus on how the DMD is used for projection display. Other application areas are being explored and evaluated to find appropriate and beneficial uses for the DMD.

Yoder, Lars A.↗

NASA NTRS1995

Optical Correlation of Images With Signal-Dependent Noise Using Constrained-Modulation Filter Devices

Images with signal-dependent noise present challenges beyond those of images with additive white or colored signal-independent noise in terms of designing the optimal 4-f correlation filter that maximizes correlation-peak signal-to-noise ratio, or combinations of correlation-peak metrics. Determining the proper design becomes more difficult when the filter is to be implemented on a constrained-modulation spatial light modulator device. The design issues involved for updatable optical filters for images with signal-dependent film-grain noise and speckle noise are examined. It is shown that although design of the optimal linear filter in the Fourier domain is impossible for images with signal-dependent noise, proper nonlinear preprocessing of the images allows the application of previously developed design rules for optimal filters to be implemented on constrained-modulation devices. Thus the nonlinear preprocessing becomes necessary for correlation in optical systems with current spatial light modulator technology. These results are illustrated with computer simulations of images with signal-dependent noise correlated with binary-phase-only filters and ternary-phase-amplitude filters.

Downie, John D.↗

NASA NTRS1995

Rotating Unbalanced-Mass Devices for Scanning: Proof-of-Concept Test Results

This experiment proves the concept of line-of-sight scanning space-based and balloon-borne instruments and telescopes with rotating unbalanced-mss (RUM) devices. Extending the concept to free-flying spacecraft is straightforward. When line-of-sight scanning is required, but optical or electronic line-of-sight scanning is impossible, then scanning with RUM devices can offer huge power and mass savings, better system reliability and stability, and improved scan accuracy. This is especially true with large instruments and telescopes scanning at high frequencies.

Alhorn, Dean C.↗