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At least 1,657 records · Page 92
All sourcesNASA NTRSDOE OSTI
DOE OSTI2020

Factors Defining the Intercalation Electrochemistry of CaFe 2 O 4 -Type Manganese Oxides

Oxides with the CaFe 2 O 4 -type structure have been predicted as being suitable hosts for reactions of intercalation of light cations such as Li and Mg because of their favorable cationic diffusion. Although Li has been shown to intercalate into the Mn 2 O 4 variant, the key structure property correlations determining function are not fully ascertained. This basic information is needed before attempting the intercalation of divalent cations, which face comparably higher migration barriers. For this purpose, here the electrode function of CaFe 2 O 4 -type Li 0.8 Mn 2 O 4 was compared for materials made by a direct high-pressure route or through cation exchange from NaMn 2 O 4 . X-ray diffraction and absorption spectroscopy revealed that, despite having largely the same bulk structure, the presence of surface defects blocked Li + transfer in Li 0.8 Mn 2 O 4 made at high pressure. These defects were not present in the cation-exchanged material, which resulted in highly reversible Li intercalation with very fast kinetics in micrometric crystals. Delithiated electrodes from the cation-exchange synthesis were subsequently reduced in an ionic liquid electrolyte containing Mg 2+ . The process induced topotactic changes in the bulk, strongly suggesting the existence of intercalation, but it is accompanied by severe reactivity with the electrolyte that impedes reversibility. This study uncovers that defects affect the fundamentals of cation intercalation in this novel class of materials. The ability of the cation-exchanged material to conduct fast reactions with Li is consistent with calculated activation energy barriers and creates promise for their use as Mg hosts, provided that novel electrolytes enhanced stability at high potential can be realized.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2024

Data-Driven Compression of Electron-Phonon Interactions

First-principles calculations of electron interactions in materials have seen rapid progress in recent years, with electron-phonon ( e − ph ) interactions being a prime example. However, these techniques use large matrices encoding the interactions on dense momentum grids, which reduces computational efficiency and obscures interpretability. For e − ph interactions, existing interpolation techniques leverage locality in real space, but the high dimensionality of the data remains a bottleneck to balance cost and accuracy. Here we show an efficient way to compress e − ph interactions based on singular value decomposition (SVD), a widely used matrix and image compression technique. Leveraging (un)constrained SVD methods, we accurately predict material properties related to e − ph interactions—including charge mobility, spin relaxation times, band renormalization, and superconducting critical temperature—while using only a small fraction (1%–2%) of the interaction data. These findings unveil the hidden low-dimensional nature of e − ph interactions. Furthermore, they accelerate state-of-the-art first-principles e − ph calculations by about 2 orders of magnitude without sacrificing accuracy. Our Pareto-optimal parametrization of e − ph interactions can be readily generalized to electron-electron and electron-defect interactions, as well as to other couplings, advancing quantitative studies of condensed matter. Published by the American Physical Society 2024

Physics↗
DOE OSTI2022

Influence of carrier trapping on radiation detection properties in $\mathrm{CVD}$ grown 4H-SiC epitaxial layers with varying thickness up to 250 µm

We report low doped n-type 4H-SiC epitaxial layers of thickness 50, 150, and 250 µm grown by hot wall chemical vapor deposition were used to fabricate Ni/4H-SiC Schottky radiation detectors. The epitaxial layers were grown on the (0001) face of highly conductive bulk 4H-SiC substrates 8° offcut towards the $\langle 11\bar{2}1\rangle$ direction. The 50, 150, and 250 µm thick epilayer detectors, under optimized settings, showed energy resolutions of 2.0%, 0.78%, and 0.63%, respectively for 5.48 MeV alpha particles. Deep level transient spectroscopy studies showed that the observed variation in the detector resolution is linked to the defect parameters in the devices. Least-squares fitting of the bias dependence of the charge collection efficiency according to a drift-diffusion model, revealed minority carrier diffusion lengths of 16, 10, and 9.2 µm, respectively, implying that the detectors are not limited by minority carrier trapping. The detector performance was observed to be primarily dependent on the concentration and capture cross-sections of the lifetime killing electron traps Z 1/2 and EH 6/7 .

36 MATERIALS SCIENCE↗
DOE OSTI2025

Distinctive features of fluorescence and waveguides in magnesium aluminate spinel crystals driven by structural discrepancy

Transparent polycrystalline ceramics are of significant importance for a wide range of scientific and industrial applications. Developing a deeper understanding of their thermodynamic behavior is essential for achieving their maximum output performance in technological applications. This study provides a systematic investigation into the thermal excitation-induced fluorescence kinetics and waveguide characteristics of Magnesium Aluminate Spinel (MgAl 2 O 4 ) single crystals, with a focus on the intricate relationship between structure and properties. High-temperature extreme environments through irradiation with swift heavy ions 645.0 MeV Xe and 352.8 MeV Fe ions were created; the atomic deposition energy threshold (E th ) associated with disorder morphologies was assessed between 0.91 and 0.99 eV atom –1 . The track prediction model was developed to support the theoretical prediction of track formation. Electronic energy loss (E ele ) disrupts the balance of the initial structure through the thermal spike effect, leading to the formation of absorption-related F and F + color centers. These defects enhance photoluminescence in the visible spectrum and result in an effective modulation of the intrinsic bandgap. Moreover, as ion beams penetrate into the material, the uneven damage distribution induces the formation of waveguide structures. In conclusion, these findings provide valuable insights into the fabrication of functional devices through irradiation technologies and the structural changes of MgAl 2 O 4 at high temperatures within extreme environments.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Improved Crystalline Structure and Enhanced Photoluminescence of ZnO Nanolayers in B i2 Se 3 /ZnO Heterostructures

The Bi 2 Se 3 /ZnO heterostructure is a new combination of high- and low-band-gap nanomaterials that can be implemented for optoelectronic devices. The influence of the Bi 2 Se 3 substrate on crystallization of ZnO nanolayers and charge separation at the Bi 2 Se 3 /ZnO interface reflects these important parameters, which affect optical and electronic properties of the heterostructure. Despite a few studies on Bi 2 Se 3 /ZnO heterostructures, the mechanisms of enhanced optical properties and correlation between optical and structural properties in such heterostructures are not studied in detail. In the present paper, we report on structure and optical properties of ZnO nanolayers with different thicknesses (10–150 nm) deposited by atomic layer deposition on planar and nonplanar Bi 2 Se 3 nanostructured coatings. Crystallization of ZnO nanolayers grown on Bi 2 Se 3 and Si substrates was analyzed by X-ray diffraction and scanning and transmission electron microscopy methods. Enhancement of ZnO photoluminescence in Bi 2 Se 3 /ZnO heterostructures in comparison to the photoluminescence of ZnO nanolayers of the same thickness deposited on p-doped Si substrates was observed. Correlation between the structure and optical properties of ZnO nanolayers in Bi 2 Se 3 /ZnO heterostructures is analyzed. Three complementary mechanisms of enhancement of optical properties of ZnO in Bi 2 Se 3 /ZnO heterostructures, based on charge separation at the Bi 2 Se 3 /ZnO interface, improvement of ZnO crystalline structure, and surface-plasmon–photon coupling, are proposed. The Bi 2 Se 3 /ZnO heterostructure is a new combination of high- and low-band-gap nanomaterials that can be implemented for optoelectronic devices. The influence of the Bi 2 Se 3 substrate on crystallization of ZnO nanolayers and charge separation at the Bi 2 Se 3 /ZnO interface reflects these important parameters, which affect optical and electronic properties of the heterostructure. Despite a few studies on Bi 2 Se 3 /ZnO heterostructures, the mechanisms of enhanced optical properties and correlation between optical and structural properties in such heterostructures are not studied in detail. In the present paper, we report on structure and optical properties of ZnO nanolayers with different thicknesses (10–150 nm) deposited by atomic layer deposition on planar and nonplanar Bi 2 Se 3 nanostructured coatings. Crystallization of ZnO nanolayers grown on Bi 2 Se 3 and Si substrates was analyzed by X-ray diffraction and scanning and transmission electron microscopy methods. Enhancement of ZnO photoluminescence in Bi 2 Se 3 /ZnO heterostructures in comparison to the photoluminescence of ZnO nanolayers of the same thickness deposited on p-doped Si substrates was observed. Correlation between the structure and optical properties of ZnO nanolayers in Bi 2 Se 3 /ZnO heterostructures is analyzed. Finally, three complementary mechanisms of enhancement of optical properties of ZnO in Bi 2 Se 3 /ZnO heterostructures, based on charge separation at the Bi 2 Se 3 /ZnO interface, improvement of ZnO crystalline structure, and surface-plasmon–photon coupling, are proposed.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Microwave microscope studies of trapped vortex dynamics in superconductors

Trapped vortices in superconductors introduce residual resistance in superconducting radio-frequency (SRF) cavities and disrupt the operation of superconducting quantum and digital electronic circuits. Understanding the detailed dynamics of trapped vortices under oscillating magnetic fields is essential for advancing these technologies. We have developed a near-field magnetic microwave microscope to study the dynamics of a limited number of trapped vortices under the probe when stimulated by a localized rf magnetic field. By measuring the local second-harmonic response (𝑃 2⁢f ) at subfemto-Watt levels, we isolate signals exclusively arising from trapped vortices, excluding contributions from surface defects and Meissner screening currents. Toy models of niobium superconductor hosting vortex pinning sites are introduced and studied with time-dependent Ginzburg-Landau (TDGL) simulations of probe/sample interaction to better understand the measured second-harmonic response. The simulation results demonstrate that the second-harmonic response of trapped vortex motion under a localized rf magnetic field shares key features with the experimental data. Here, this measurement technique provides access to vortex dynamics at the micrometer scale, such as depinning events and spatially resolved pinning properties, as demonstrated in measurements on a niobium film with an antidot flux pinning array.

43 PARTICLE ACCELERATORS↗
DOE OSTI2021

Neutron computed tomography of B12W and M8N socket sections of the Arecibo telescope

From neutron user principal investigator: We kindly request the public release of three neutron imaging datasets through ONCat. All datasets were collected from two forensic specimens, B12W and M8N, sectioned from zinc-filled steel-wire sockets recovered from the collapsed Arecibo Telescope. The dataset titled “Neutron radiographs of B12W and M8N socket sections of the Arecibo telescope” contains normalized two-dimensional (2D) neutron radiographs of the specimens, showing the geometry and spatial distribution of the steel wires embedded within the zinc matrix, as well as internal features such as voids and cracks. The dataset titled “Neutron computed tomography of B12W and M8N socket sections of the Arecibo telescope” contains normalized 2D neutron projection images acquired over a range of specimen rotation angles for one selected region of each specimen. These projection images were used to reconstruct three-dimensional (3D) tomographic volumes that reveal the embedded-wire geometry and internal defects. The dataset titled “Bragg edge imaging (BEI) of B12W and M8N socket sections of the Arecibo telescope” contains six time-of-flight (TOF) neutron imaging datasets, three from each specimen, acquired at regions of interest selected based on the radiographs. The spatially resolved 2D TOF images show the zinc matrix and embedded steel wires, and the wavelength-dependent neutron transmission data were used to characterize crystallographic texture within the zinc. All components and their condition are in the public domain as they are the property of the National Science Foundation (NSF). The neutron imaging data, part geometries, and detailed forensic information have been widely published in the Arecibo Telescope Collapse Forensic Report by Thornton Tomasetti Engineers and others (NASA report and NASEM report).

Bilheux, Hassina↗
DOE OSTI2025

Developing Machine Learning Interatomic Potential for Fe-Cr-Ni Alloys

Accurate prediction of creep and fatigue behavior of stainless steel at elevated temperatures in hydrogen environment requires fundamental understanding of alloy-hydrogen interaction at cross-scale including bulk lattice and key defects such as vacancies, grain boundaries, surfaces, stacking faults, dislocations, and precipitates. This project aims to predict creep behavior of 347H stainless steel with H using machine learning interatomic potentials based on first-principles density functional theory simulations. The Moment Tensor Potentials platform is adopted for this work since it demonstrates a fine balance between model accuracy and computational efficiency. The potential is well trained based on large amount of high-fidelity density functional theory calculations. The validation is carried out by comparing various important properties including short range order, coefficient of thermal expansion, elastic properties, stacking fault energy, grain boundary energy, and surface energy. This work lays the foundation for reliable atomistic simulation of high temperature hydrogen attack of stainless steel.

density functional theory (DFT)↗
DOE OSTI2024

A Pyrrole Modified 3,4‐Propylenedioxythiophene Conjugated Polymer as Hole Transport Layer for Efficient and Stable Perovskite Solar Cells

Despite the outstanding electric properties and cost-effectiveness of poly(3,4-ethylenedioxythiophene) (PEDOT) and its derivatives, their performance as hole transport layer (HTL) materials in conventional perovskite solar cells (PSCs) has lagged behind that of widely used spirobifluorene-based molecules or poly(triaryl amine). This gap is mainly from their poor solubility and energy alignment mismatch. In this work, the design and synthesis of a pyrrole-modified HTL (PPr) based on 3,4-propylenedioxythiophene (ProDOT) are presented for efficient and stable PSCs. As a result of the superior defects passivation ability, excellent contact with perovskite, enhanced hole extraction, and high hydrophobicity, the unencapsulated PPr-based PSCs showed the peak PCE of 21.49% and outstanding moisture stability (over 4000 h). This work highlights the potential application of ProDOT-based materials as HTL for PSCs and underscores the importance of the rational design of PEDOT and its derivatives.

14 SOLAR ENERGY↗
DOE OSTI2024

Magnetic order in nanogranular iron germanium (Fe 0.53 Ge 0.47 ) films

We study the effect of strain on the magnetic properties and magnetization configurations in nanogranular Fe x Ge 1-x films (x = 0.53 ± 0.05) with and without B20 FeGe nanocrystals surrounded by an amorphous structure. Relaxed films on amorphous silicon nitride membranes reveal a disordered skyrmion phase while films near and on top of a rigid substrate favor ferromagnetism and an anisotropic hybridization of Fe d levels and spin-polarized Ge sp band states. The weakly coupled topological states emerge at room temperature and become more abundant at cryogenic temperatures without showing indications of pinning at defects or confinement to individual grains. These results demonstrate the possibility to control magnetic exchange and topological magnetism by strain and inform magnetoelasticity-mediated voltage control of topological phases in amorphous quantum materials.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Wide bandgap semiconductor materials and devices

The technological and societal impacts of electronic devices based on Ge, Si, and compound semiconductors like GaAs have been profound, fueling the decades long quest in identifying ever-larger bandgap semiconductors to untap new applications and possibilities. Specifically, an increase in the bandgap leads to shorter wavelength emission and an increased breakdown electric field, which has direct consequences for solid-state lighting like light-emitting diodes (LEDs) and laser diodes (LDs) from the visible (blue-green, blue, and violet) and beyond (UV and deep-UV) spectral range and for radically improved power devices supported by a higher intrinsic breakdown strength. Wide bandgap (WBG) semiconductors represent the frontier of materials that satisfy these criteria and include group IV, III–V, and II–VI material families like SiC (3.2 eV), GaN (3.4 eV), and ZnO (3.4 eV), respectively. With even larger bandgaps exceeding 4 eV, ultrawide bandgap (UWBG) semiconductors include diamond, III-nitrides incorporating Al and B (e.g., AlN, BN, and AlGaN), and sesquioxides like Ga 2 O 3 and (Al,Ga) 2 O 3 . These materials span widely varying stages of technological maturity, with SiC and GaN platforms among the most mature with commercially available devices in RF and high-power electronics, while other platforms such as Ga 2 O 3 rapidly advancing and poised to enable new UV and deep-UV optoelectronic devices. This Special Topic on Wide Bandgap Semiconductor Materials and Devices covers broad research subtopics on WBG and UWBG materials that span bulk crystals, epitaxy and substrate technologies, fundamental defect science, and doping, as well as electronic and optoelectronic device fabrication and characterization. Here, we highlight works from the collection, which we categorize by material platform of SiC, III-nitrides, and Ga 2 O 3 and related alloys.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Extraordinary Strain Hardening from Dislocation Loops in Defect-Free Al Nanocubes

The complex interaction of crystalline defects leads to strain hardening in bulk metals. Metals with high stacking fault energy (SFE), such as aluminum, tend to have low strain hardening rates due to an inability to form stacking faults and deformation twins. Here, we use in situ SEM mechanical compressions to find that colloidally synthesized defect-free 114 nm Al nanocubes combine a high linear strain hardening rate of 4.1 GPa with a high strength of 1.1 GPa. These nanocubes have a 3 nm self-passivating oxide layer that has a large influence on mechanical behavior and the accumulation of dislocation structures. Post-compression TEM imaging reveals stable prismatic dislocation loops and the absence of stacking faults. MD simulations relate the formation of dislocation loops and strain hardening to the surface oxide. These results indicate that slight modifications to surface and interfacial properties can induce enormous changes to mechanical properties in high SFE metals.

36 MATERIALS SCIENCE↗
DOE OSTI2024

First-Principles Study on the Role of Cu and Cl-Based Dopants in NiO

Utilization of wide band gap oxide-based materials in thin-film solar energy technologies has increased in recent years. Among the numerous candidate oxide materials, NiO has shown many desirable optoelectronic properties that are applicable to thin-film PV technologies such as cadmium telluride PV. However, one critical factor requiring further investigation is the p-type doping behavior of NiO, specifically when the cadmium telluride solar cell undergoes conventional processes such as copper doping and chlorine-based activation treatment. The previous literature has shown a large degree of variability in hole concentrations in NiO when copper is used as the primary dopant. This study uses first-principles computational modeling based on density functional theory coupled with defect equilibria calculations to quantitatively explore the role of copper and chlorine-based extrinsic dopants in the p-type doping activity of NiO. The study reveals the importance of extrinsic dopants and their binding interactions with nickel vacancies to effectively p-dope NiO. It is suggested that both the formation of V Ni + Cu Ni and V Ni + Cl O defect pairs under a supersaturated state of NiO are potential mechanisms for increasing hole densities. On the other hand, the production of 2Cu Ni severely limits the effectiveness of p-doping in NiO, even in the presence of the aforementioned defect pairs. Furthermore, the study provides a guideline for experimentalists interested in using copper or chlorine species to understand how to controllably p-dope NiO during thin-film synthesis.

chlorine↗
DOE OSTI2022

Printing noble metal alloy films with compositional gradient

Additive manufacturing has offered great promise in fabricating materials and devices with complex structures and unique properties. In addition to complex structures, additive manufacturing also allows for local changes to material compositions and/or structure, ideal for combinatorial material investigations. Besides, advantages over freedom of design, mass customization, waste minimization and the capability to fast prototyping, the on-demand control of compositional distributions in low dimensional materials remains challenging. In this work, we demonstrate a combinatorial aerosol jet printing technique to create noble metal films with gradient compositions. Nanoparticle sizes and ink chemistry are critical for aerosol jet printing and sintering process in order to achieve defect free thin films. Ruthenium (Ru) and platinum (Pt) nanoparticles with size <5 nm were synthesized and formulated into printable inks. Further, after thermal sintering at temperature as low as 400 °C, printed nanoparticles formed highly reflective films free from microstructural defect. Alloy films of gradient compositions were realized via in-situ mixing Ru and Pt ink streams and varying the mixing ratio during the printing process. This combinatorial printing method provides great potential to rapidly transform nanoparticle inks into new materials compositions and structures unobtainable via conventional methods for high-throughput materials studies.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Piezoelectric response and failure behavior of cement paste under external loading

We study the elastic behavior and rupture mechanism of Calcium Silicate Hydrates (C-S-H) in response to tensile loading. For the three tensile axes, initial defects are spotted in the interlayer regions. However, the crack propagation is rather different depending on the axis of tensile. The cup-and-cone failure surface shows the ductile feature of C-S-H in the x and y directions; while the devastating rupture mode confirms the brittle feature of C-S-H in the z direction. Piezoelectricity was investigated using the charge fluctuation method. The polarization variation in response to small strain was also investigated and piezoelectric coefficients were derived. Furthermore, dependence of elastic and piezoelectric properties over external pressure was analyzed. Results reveal an improvement of the mechanical properties and the ultimate strength especially in the z direction; whereas the non-piezoelectricity remains unchanged despite the rearrangement of atoms induced by the external applied pressure.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Combined density functional theory/kinetic Monte Carlo investigation of surface morphology during cycling of Li-Cu electrodes

In this work, we employed a combined density functional theory and kinetic Monte Carlo approach in order to investigate the nanoscale behavior of lithium stripping and plating on lithium-copper nanoalloys. Density functional theory calculations were used to develop an atom-by-atom understanding of the nucleation behavior of lithium on copper surfaces with different surface morphologies. We found that nanometric pits resulted in significantly more favorable lithium deposition when compared to pristine or lightly-defective Cu surfaces, which is in agreement with previous experimental studies. We then used density functional theory and constrained ab initio molecular dynamics to develop interaction and reaction parameters for a larger-scale kinetic Monte Carlo model in order to provide insight into the stripping and plating behavior of nanostructured Li-Cu nanoalloy anodes. Substantial losses in capacity and strong indications of morphological change were observed for a wide range of Cu:Li ratios over 100 cycles. We observed a complex relationship between the nanoparticle composition and the properties of the formed solid-electrolyte interphase.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2022

Minimizing thickness variation in monolithic U-10Mo fuel foil and Zr interlayer during hot rolling: A microstructure-based finite element method analysis

Low-enriched uranium alloyed with 10 wt. % molybdenum (U-10Mo) has been identified as a promising alternative to highly enriched uranium fuel for the United States’ high performance research reactors. The monolithic U-10Mo fuel plate consists of a metallic U-10Mo fuel foil with a 25 µm Zr interlayer and a relatively thick cladding of aluminum alloy 6061. The Zr interlayer is typically applied during the hot co-rolling process, and this process dictates the uniformity of the Zr interlayer. Thickness variation observed in the U-10Mo and Zr interlayer has been attributed to several sources: the initial grain size of the U-10Mo castings, can materials, rolling temperature, inhomogeneous molybdenum content, and porosity in the cast U-10Mo. This thickness variation limits the ability to meet the dimensional specification; thus, a better understanding of the factors causing the nonuniform thickness is needed. In this work, we used a novel, microstructure-based finite element method to model the hot rolling process to address these concerns. Grain microstructures in U-10Mo were tessellated and explicitly considered in the finite element model. Each grain was assigned a random material property to mimic the grain strength variations induced by different grain orientations. Simulations were performed using six steel can thicknesses, four grain sizes, and with or without a Zr interlayer to investigate the influences of those variables on the thickness nonuniformity. The simulation results showed that a thinner steel can and finer U-10Mo grain size reduce thickness variations in both the U-10Mo fuel foil and Zr interlayer. The direct findings from the simulations and analysis can be used to optimize the hot rolling schedule, reduce fabrication defects, and meet the dimensional specifications. The proposed microstructure-based finite element model can be also coupled with experimental microstructure characterization data, images, and models to simulate multi-pass hot rolling.

36 MATERIALS SCIENCE↗
DOE OSTI2026

Tailorable multiferroic tunnel junctions from all-van der Waals multilayer stacking

Multiferroic tunnel junctions (MFTJs) represent a class of multistate, non-volatile spintronic devices, in which electron tunnelling can be manipulated by switching long-range lattice and spin orders. In contrast to conventional oxide-based MFTJs, MFTJs constructed from two-dimensional van der Waals (vdW) crystals promise minimal defect concentration in the constituents and at interfaces, which may allow for probing intrinsic tunnelling physics and the development of high-performance devices. Here, in this study, we construct Fe 3 GeTe 2 /CuInP 2 S 6 /Fe 3 GeTe 2 all-vdW MFTJs by assembling multilayer flakes of ferromagnetic Fe 3 GeTe 2 electrodes and a ferroelectric CuInP 2 S 6 spacer. These MFTJs exhibit four non-volatile resistance states featuring sizable tunnelling magnetoresistance of ∼10 2 % and tunnelling electroresistance of ∼10 4 %. To tune the properties of the vdW MFTJ, we make use of the flexibility in material choice offered by vdW heterostructure devices; we use Fe 3 GeTe 2 /Fe 5 GeTe 2 asymmetric electrodes to boost the tunnelling electroresistance by 10 3 %, we integrate In 2 Se 3 as a ferroelectric with a smaller bandgap to enhance the ON-state current density by 10 4 % to 10 4 A cm −2 and we use Fe 3 GaTe 2 electrodes to demonstrate room temperature operation. Furthermore, when we combine the asymmetric ferromagnetic electrodes with the small-bandgap ferroelectric spacer to construct Fe 3 GeTe 2 /In 2 Se 3 /Fe 5 GeTe 2 MFTJs, we simultaneously realized tunnelling electroresistance of 10 6 % and an ON-state current density of 10 4 A cm −2 , both two orders of magnitude higher than the highest values achieved with conventional oxide-based MFTJs. In the future, our all-vdW MFTJs with the tailorability of all functional layers may make it possible to investigate fundamental aspects of interlayer tunnelling and enable the design of functional magnetoelectric nanodevices.

Xie, Ti [University of Maryland, College Park, MD ↗