The 1962 Langley Memorial Lecture
Role of engineering and science to aeronautics and space research
SPACE SCIENCE↗
SEARCH · Engineering Papers
Results for “out of memory”
Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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Summary of investigations undertaken at langley memorial aeronautical laboratory on problem of aircraft icing
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Jones, A. R.↗
Sleep, Wakefulness, Dreams and Memory
Sleep-wakefulness cycle mechanisms shown in central neural activity changes
WAKEFULNESS↗
The memory molecules le molecole della memoria
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Schmitt, F. O.↗
Field Infrared Analysis of Terrain - Spectral Correlation Program. Part II - Stanford Adaptation and Corrections for Use on LMSC Program on IBM 7090 - 32K Memory Computer. Part III - Voltage Drift Correction Procedures
Adaptation of field infrared terrain analysis spectral correlation program to IBM 7090 and recording tape voltage drift correction procedures
SPECTRAL ANALYSIS↗
The plasma display - A digitally controllable, high brightness display with an inherent memory
Characteristics of digital controllable high brightness plasma display for airborne systems
Willson, R. H.↗
Investigation of ten to the tenth power bit optical memory Final report, 1 Apr. 1967 - 31 Jan. 1968
Properties of potassium bromide crystals as optical data storage media
Kearney, R. E.↗
Optically exciting a magnetic memory - A feasibility study
Rare earth iron garnets were used in experiments to determine the feasibility of optically pumping a magnetic material to effect the switching process. It was found that rare earth garnets are limited by an absorption edge, only terbium and dysprosium offer a possibility of pumping at energies below the conduction band edge.
Grismore, F. L.↗
Investigation of 10 sup 10 bit optical memory Interim report
Properties of Bragg holography in alkali halide crystals and application to optical data storage and processing
Bardos, A.↗
Spaceborne memory organization - Appendices Interim report
Computational requirements and information storage devices for unmanned spacecraft in advanced planetary exploration, 1975 - 1985
Source record↗
Integrated circuit random-access memory decoder
Decoder circuit with complementary-symmetry circuit configuration composed of MOS and n-p-n bipolar devices minimizes power consumption. Emitter-follower drive scheme results in low power dissipation and high speed operation.
Katz, S.↗
Low-power integrated-circuit driver for ferrite-memory word lines
Composite circuit uses both n-p-n bipolar and p-channel MOS transistors /BIMOS/. The BIMOS driver provides 1/ ease of integrated circuit construction, 2/ low standby power consumption, 3/ bidirectional current pulses, and 4/ current-pulse amplitudes and rise times independent of active device parameters.
Katz, S.↗
Cognitive memory
Perceptive cognition system structurally analyzed with semantic techniques for parsing and compiling
Arnold, P.↗
Binary magnetic memory device Patent
Nondestructive interrogating and state changing circuit for binary magnetic storage elements
Schaefer, D. H.↗
The plasma display - A digitally controllable, high brightness display with an inherent memory
Plasma display system characteristics and history, discussing gas discharge cell construction and behavioral mechanisms
Willson, R. H.↗
Magneto-optic properties of quenched thin films of MnBi and optical memory experiments
Quenched MnBi thin films measured for magnetic, magneto-optical and optical properties, noting Faraday rotation
Aagard, R. L.↗
Nonvolatile read/write memory element - A concept
Bidirectional MOS driver, integrated with diode matrix reduces fuse read current to only that of junction leakage and transient MOS gate charging current. No current, except junction leakage current, flows in unaddressed cells. Current required to drive MOS gate flows through unfused branch only during read mode.
Cricchi, J. R.↗
A study of nitride devices for computer memory applications
Metal-nitride-oxide-silicon /MNOS/ capacitors act like metal-nitride-silicon /MNS/ capacitors with extra interface where sheet of charge can be stored in slow states. Flatband voltage shifts over a wide range by adjusting store charge density.
Raburn, W. D.↗