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At least 1,639 records · Page 91
All sourcesNASA NTRSDOE OSTI
DOE OSTI2021

Effect of heterostructure engineering on electronic structure and transport properties of two-dimensional halide perovskites

Organic-inorganic halide perovskite solar cells have attracted much attention due to their low-cost fabrication, flexibility, and high-power conversion efficiency. More recent efforts show that the reduction from three- to two-dimensions (2D) of organic–inorganic halide perovskites promises an exciting opportunity to tune their electronic properties. Here, we explore the effect of reduced dimensionality and heterostructure engineering on the intrinsic material properties, such as energy stability, bandgap and transport properties of 2D hybrid organic–inorganic halide perovskites using first-principles density functional theory. We show that the energy stability of engineered perovskite heterostructures is significantly enhanced. The heterostructures with improved stability also show excellent transport properties similar to their bulk counterparts. Furthermore, these layered chemistries demonstrate the advantage of a broad range of tunable bandgaps and high-absorption coefficient in the visible spectrum. The proposed 2D heterostructured material holds potential for nano-optoelectronic devices as well as for effective photovoltaics.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Automated workflow for non-empirical Wannier-localized optimal tuning of range-separated hybrid functionals

Here, we introduce an automated workflow for generating non-empirical Wannier-localized optimally-tuned screened range-separated hybrid (WOT-SRSH) functionals. WOT-SRSH functionals have been shown to yield highly accurate fundamental band gaps, band structures, and optical spectra for bulk and 2D semiconductors and insulators. Our workflow automatically and efficiently determines the WOT-SRSH functional parameters for a given crystal structure and composition, approximately enforcing the correct screened long-range Coulomb interaction and an ionization potential ansatz. In contrast to previous manual tuning approaches, our tuning procedure relies on a new search algorithm that only requires a few hybrid functional calculations with minimal user input. We demonstrate our workflow on 23 previously studied semiconductors and insulators, reporting the same high level of accuracy. By automating the tuning process and improving its computational efficiency, the approach outlined here enables applications of the WOT-SRSH functional to compute spectroscopic and optoelectronic properties for a wide range of materials.

Gant, Stephen E. [University of California, Berkel↗
DOE OSTI2015

Equation of motion coupled cluster methods for electron attachment and ionization potential in polyacenes

Polyacenes have attracted considerable attention due to their use in organic based optoelectronic materials. Polyacenes are polycyclic aromatic hydrocarbons composed of fused benzene rings. Key to understanding and design of new functional materials is an understanding of their excited state properties starting with their electron affinity (EA) and ionization potential (IP). We have developed a highly accurate and com- putationally e*fficient EA/IP equation of motion coupled cluster singles and doubles (EA/IP-EOMCCSD) method that is capable of treating large systems and large basis set. In this study we employ the EA/IP-EOMCCSD method to calculate the electron affinity and ionization potential of naphthalene, anthracene, tetracene, pentacene, hex- acene and heptacene. We have compared our results with other previous theoretical studies and experimental data. Our EA/IP results are in very good agreement with experiment and when compared with the other theoretical investigations our results represent the most accurate calculations as compared to experiment.

benzene↗
DOE OSTI2024

Improving 2D Schottky contacts using an intralayer strategy

An additional insulating layer between the electrode and semiconductor is beneficial to reduce the interfacial coupling and build two-dimensional (2D) Schottky contacts. Here, an intralayer strategy was proposed by using metallic 2D Bi 2 Sr 2 CaCu 2 O 8+δ (BSCCO) as contacts on 2D semiconductors. Inside a BSCCO monolayer, a conductive layer is sandwiched between insulating layers. Thus, the BSCCO contact has its own insulating layer, which is ultra-thin, single crystalline, and of high quality. This native layer could reduce the metal-induced gap state and thus weaken the interfacial Fermi level pinning effect. Such 2D Schottky diodes thus have barrier heights of 300 mV and a rectification ratio of 104. Furthermore, 2D metal-semiconductor field-effect transistors with BSCCO Schottky gate have a high on-off ratio, low leakage current, and low subthreshold swing value near the theoretical limit. The intralayer structure offers a new approach to improve the 2D Schottky junctions and has prospects in 2D electronics and optoelectronics.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2022

Understanding the p-doping of spiroOMeTAD by tris(pentafluorophenyl)borane

The solid-state organization of photoabsorber, hole and electron transporting layers, and interfaces between them plays an important role in governing the performance and stability of emerging optoelectronic devices such as perovskite solar cells (PSCs). The molecular organic semiconductor (OSC) 2,2' ,7,7' -tetrakis [N,N-di(4-methoxyphenyl)amino]-9,9'-spirobifluorene (spiroOMeTAD) is a promising hole-transporting material (HTM) for PSCs, which is p-doped by molecular dopants to augment the charge carrier mobility. Here, the p-type doping of spiroOMeTAD by tris(pentafluorophenyl)borane (BCF) is investigated by a combination of techniques including optical spectroscopy, X-ray diffraction, Fourier transform infrared (FTIR), solid-state (ss)NMR, and electron paramagnetic resonance (EPR) spectroscopy. BCF molecules interact with traces of water molecules to form BCF-water complexes. Optical spectroscopy analysis suggests that the BCF/BCF-water complexes oxidize spiroOMeTAD molecules and facilitate p-type doping of spiroOMeTAD molecules. The different distributions of BCF and BCF-water molecules in doped spiroOMeTAD are characterized by FTIR and 11B NMR spectroscopy. An NMR crystallography approach which combines two-dimensional (2D) ssNMR and crystallography modeling is employed to unravel the packing interactions in spiroOMeTAD, and this analysis is extended to probe the morphological and structural changes in spiroOMeTAD:BCF blends. The hyperfine interactions are characterized by 2D hyperfine sub-level correlation (HYSCORE) spectroscopy. In this way, insight into the complex spiroOMeTAD:BCF blend morphology is obtained and compared for different dopant concentrations. Further, molecular-level analysis of doped HTMs enabled by this study has much wider relevance for further investigation, for example, chemical design and interfacial engineering of p-type doped HTMs for stable and efficient hybrid perovskite photovoltaics.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2024

Design of biphenylene-derived tunable dirac materials

The exploration of carbon allotropes has unveiled a series of two-dimensional (2D) materials with unique electronic and mechanical properties, yet the need for stable structures with tailored electronic properties persists. Here, in this study, we introduce a new class of 2D carbon allotropes derived from the biphenylene network (BPN), incorporating acetylenic linkages to tune their structural and electronic characteristics. Through density functional theory calculations, we identified ten novel BPN-derived structures that exhibit both energetic and dynamic stability, confirmed by cohesive energy and phonon spectrum analyses. Among them, BPN-02 and BPN04 are metallic, featuring critically-tilted type-III Dirac cones under ~ 5 % biaxial strain, while BPN-22 is a semiconductor with a band gap of 0.95 eV and exhibits highly anisotropic carrier mobility. Additionally, these structures demonstrate significant anisotropy in their elastic properties, further distinguishing them from other 2D carbon materials like graphene. Our findings suggest that these novel BPN-based structures have strong potential for next-generation electronic and optoelectronic applications, providing new avenues for the design and synthesis of advanced carbon materials.

2D carbon allotropes↗
DOE OSTI2024

Synergistic role of Sn-doping on the thermal and electrical properties of sinnerite Cu 6 As 4 S 9

Sinnerite Cu 6 As 4 S 9 has been identified as a promising material for optoelectronic applications, with potential for other energy-related applications; however, knowledge of the electrical and thermal properties as well as the mechanisms underlying transport in sinnerite is lacking. Here, we present an investigation of the synthesis, structural, thermal and electrical transport properties of stoichiometric and Sn-doped Cu 6 As 4 S 9 . Sinnerite has a triclinic lattice structure, with highly distorted local atomic coordination environments that, in part, results in its complex structure and bonding. Our results and analyses indicate As 4s 2 lone pair-induced distortions and strong lattice anharmonicity that leads to a relatively short phonon mean free path, resulting in intrinsically very low thermal conductivity. The electrical resistivity for both compositions, Cu 6 As 4-x Sn x S 9 (x = 0, 0.2), are relatively high and varies little with temperature, typical of degenerate semiconductors. An increase in mobility and electrical conductivity was obtained by Sn doping in Cu 6 As 3.8 Sn 0.2 S 9 . This work demonstrates an effective route to synthesize bulk sinnerite as well as advances the knowledge of the properties of sinnerite, as this and other ternary chalcogenides continue to be of interest for potential technologically significant applications.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Tailored PEDOT:PSS hole transport layer for higher performance in perovskite solar cells: Enhancement of electrical and optical properties with improved morphology

Precise control over the charge carrier dynamics throughout the device can result in outstanding performance of perovskite solar cells (PSCs). Poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) is the most actively studied hole transport material in p-i-n structured PSCs. However, charge transport in the PEDOT:PSS is limited and inefficient because of its low conductivity with the presence of the weak ionic conductor PSS. In addition, morphology of the underlying PEDOT:PSS layer in PSCs plays a crucial role in determining the optoelectronic quality of the active perovskite absorber layer. This work is focused on realization of a non-wetting conductive surface of hole transport layer suitable for the growth of larger perovskite crystalline domains. This is accomplished by employing a facile solvent-engineered (ethylene glycol and methanol) approach resulting in removal of the predominant PSS in PEDOT:PSS. The consequence of acquiring larger perovskite crystalline domains was observed in the charge carrier dynamics studies, with the achievement of higher charge carrier lifetime, lower charge transport time and lower transfer impedance in the solvent-engineered PEDOT:PSS-based PSCs. Use of this solvent-engineered treatment for the fabrication of MAPbI3 PSCs greatly increased the device stability witnessing a power conversion efficiency of 18.18%, which corresponds to ~37% improvement compared to the untreated PEDOT:PSS based devices.

14 SOLAR ENERGY↗
DOE OSTI2016

Friction and wear behavior of nitrogen-doped ZnO thin films deposited via MOCVD under dry contact

Most researches on doped ZnO thin films are tilted toward their applications in optoelectronics and semiconductor devices. Research on their tribological properties is still unfolding. In this work, nitrogen-doped ZnO thin films were deposited on 304 L stainless steel substrate from a combination of zinc acetate and ammonium acetate precursor by MOCVD technique. Compositional and structural studies of the films were done using Rutherford Backscattering Spectroscopy (RBS) and X-ray Diffraction (XRD). The frictional behavior of the thin film coatings was evaluated using a ball-on-flat configuration in reciprocating sliding under dry contact condition. After friction test, the flat and ball counter-face surfaces were examined to assess the wear dimension and failure mechanism. In conclusion, both friction behavior and wear (in the ball counter-face) were observed to be dependent on the crystallinity and thickness of the thin film coatings.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Metal Halide Perovskites in Quantum Dot Solar Cells: Progress and Prospects

“Go big or go home” could never be a truer statement, especially when it comes to energy. The world population is increasing, the energy use per person is growing more rapidly, and the total electricity use per person is growing even more quickly than that. To handle this demand, energy production must be increased, and it is vital for renewable sources to be used. Currently three quarters of a terawatt of power generated from photovoltaics (PVs) has been installed. At a somewhat optimistic average power-conversion efficiency of 18%, the distributed surface area of high purity optoelectronic grade semiconductor photovoltaic panels pointed at the sun is substantially larger than the area of the whole state of Rhode Island or nearly double the land mass of Luxembourg. While photovoltaic production continues to ramp to immense proportions, perovskite semiconductors are poised to greatly complement existing technology. On the other end of the size spectrum, the study of semiconductor nanocrystals or quantum dots (QDs) has led to advanced structures and deeper understanding within halide perovskite semiconductors. In this article, we show how the development of nanoscale metal halide perovskite semiconductors have gained prominence surpassing all other QD materials in terms of efficiency, and are becoming a platform for further improving technology to solve big energy challenges.

14 SOLAR ENERGY↗
DOE OSTI2010

Investigation of structural, morphological, luminescent and thermal properties of combusted aluminium-based iron oxide

Nanocomposites of aluminium integrated hematite {alpha}-Fe{sub 2}O{sub 3} are synthesized by combustion route using aqueous solutions of AR grade ferric trichloride and aluminium nitrate as precursors. The influence of aluminium incorporation on to the morphology, XPS, photoluminescence and thermal properties has been investigated. The FESEM and AFM micrographs depict that the samples are compact and have homogeneously distributed grains of varying sizes ({approx}20-60 nm). Chemical composition and valence states of constituent elements in hematite are analyzed by XPS. In room temperature photoluminescence (PL) study, we observed strong violet emission around 436 nm without any deep-level emission and a small PL FWHM indicating that the concentrations of defects are responsible for deep-level emissions. The specific heat and thermal conductivity study shows the phonon conduction behavior is dominant. We studied interparticle interactions using complex impedance spectroscopy. We report a new potential candidate for its possible applications in optoelectronics and magnetic devices. -- Graphical abstract: Frequency and temperature dependent interparticle interactions like grains, grain boundary effects using complex impedance spectroscopy of pure and 10 at% Al:Fe{sub 2}O{sub 3} have been studied. Display Omitted

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2012

Stable metal-insulator transition in epitaxial SmNiO{sub 3} thin films

Samarium nickelate (SmNiO{sub 3}) is a correlated oxide that exhibits a metal-insulator transition (MIT) above room temperature and is of interest for advanced electronics and optoelectronics. However, studies on SmNiO{sub 3} thin films have been limited to date, in part due to well-known difficulties in stabilizing the Ni{sup 3+} valence state during growth, which are manifested in non-reproducible electrical characteristics. In this work, we show that stable epitaxial SmNiO{sub 3} thin films can be grown by rf magnetron sputtering without extreme post-deposition annealing conditions using relatively high growth pressure (>200 mTorr). At low growth pressure, SmNiO{sub 3} is insulating and undergoes an irreversible MIT at {approx}430 K. As pressure is increased, films become metallic across a large temperature range from 100 to 420 K. At high pressure, films are insulating again but with a reversible and stable MIT at {approx}400 K. Phase transition properties can be continuously tuned by control of the sputtering pressure. - Graphical Abstract: X-ray diffraction (left) and resistivity-temperature characteristics (right) of sputtered SmNiO{sub 3} thin films as a function of sputtering pressure. As sputtering pressure increases, the out-of-plane lattice constant of SmNiO{sub 3} decreases, consistent with enhanced oxygen concentration. Concordantly, the electrical properties are strongly modified, and a reversible metal-insulator phase transition is observed at {approx}400 K in the film grown at high pressure. Highlights: Black-Right-Pointing-Pointer Stable SmNiO{sub 3} films grown by rf sputtering without extreme annealing conditions. Black-Right-Pointing-Pointer High sputtering pressures needed to fully stabilize SmNiO{sub 3}. Black-Right-Pointing-Pointer Reversible metal-insulator transition observed at {approx}400 K, similar to bulk. Black-Right-Pointing-Pointer Electrical properties strongly modifiable by varying sputtering pressure.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2012

Synthesis of ZnTe dendrites on multi-walled carbon nanotubes/polyimide nanocomposite membrane by electrochemical atomic layer deposition and photoelectrical property research

We report on the electrochemical atomic layer deposition (EC-ALD) of ZnTe dendrites on the carboxyl-functionalized multi-walled carbon nanotubes/polyimide (COOH-MWCNTs/PI) membrane. Electrochemical characteristics were studied by cyclic voltammetry (CV) and the deposition of ZnTe dendrites was completed using amperometric method (I-t). The prepared ZnTe dendrites were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM) and transmission electron microscopy (TEM). The growth mechanism of ZnTe dendrites was elucidated to give a deep understanding of crystal growth. The concentration of reagents and deposition cycle had a significant effect on the morphology and structure of deposits. UV-vis transmission study indicated a direct band gap of 2.26 eV. Photoelectrical measurement confirmed the p-type conductivity of ZnTe dendrites, which indicated that the dendritic ZnTe crystals may have potential practical application in optoelectronic devices. - Graphical abstract: Representative SEM images of ZnTe dendrites. (a) Panorama of ZnTe dendrites; (b) a single dendrite. The regular branches appeared like leaves and showed a parallel arrangement layer upon layer between each other. Highlights: Black-Right-Pointing-Pointer ZnTe dendrites were successfully synthesized on CNTs/PI membrane by electrodeposition. Black-Right-Pointing-Pointer The growth mechanism of ZnTe dendritic structures was investigated in detail. Black-Right-Pointing-Pointer The concentration and deposition cycle greatly affected the morphology of ZnTe. Black-Right-Pointing-Pointer OCP and I-t studies showed that ZnTe can be beneficial to photoelectric applications.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2013

The structural, electrical, and optical properties of hydrogenated chromium-doped CdO films

Cadmium oxide thin films doped with different amounts of chromium and annealed in hydrogen atmosphere have been grown on glass substrates by means of physical vapour deposition (PVD) method. The structural, electrical, and optical properties of the prepared Cr-doped CdO (CdO:Cr–H) films were systematically studied. The structural investigations show that the incorporated Cr ions mainly occupied locations in interstitial positions of CdO lattice. The bandgap engineer by Cr incorporation and hydrogenation were studied. The variations of the electrical parameters of CdO:Cr–H films with Cr incorporation and hydrogenation were investigated. It was established that among the investigated samples, the largest mobility and conductivity were measured with 1.5%:Cr–H film. Therefore, hydrogenated CdO:Cr films can be effectively used in different applications of near infrared-transparent-conducting-oxide (NIR-TCO). - Graphical abstract: Optoelectronic properties of synthesised chromium-doped CdO thin films. It was established that the largest mobility (53.4 cm{sup 2}/V.s) and conductivity (2136.8 S/cm) were measured in 1.5%:Cr–H doped CdO film. Therefore, such films can be effectively used in near infrared-transparent-conducting-oxide (NIR-TCO). - Highlights: • The properties of CdO films annealed in H{sub 2} gas were systematically studied. • Cr{sup 3+} ions most likely occupied interstitial locations in CdO lattice and as donors. • Improvement of conductivity parameters with Cr doping and H annealing. • Bandgap narrowing observed with Cd-doping.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2014

Low-cost fabrication of ternary CuInSe{sub 2} nanocrystals by colloidal route using a novel combination of volatile and non-volatile capping agents

Wet-route synthesis of CuInSe{sub 2} (CISe) nanocrystals has been envisaged with the utilization of the unique combination of coordinating ligand and non coordinating solvent. Our work demonstrates the formation of a single-phase, nearly stoichiometric and monodispersive, stable and well-passivated colloidal ternary CISe nanocrystals (band gap (E{sub g})∼1.16 eV) using a novel combination of ligands; viz. volatile arylamine aniline and non-volatile solvent 1-octadecene. The synthesis and growth conditions have been manoeuvred using the colligative properties of the mixture and thus higher growth temperature (∼250 °C) could be attained that promoted larger grain growth. The beneficial influence of the capping agents (aniline and 1-octadecene) on the properties of chalcopyrite nanocrystals has enabled us to pictorally model the structural, morphological and optoelectronic aspects of CISe nanoparticles. - Graphical abstract: Without resorting to any post-selenization process and using the colligative properties of the mixture comprising of volatile aniline and non-volatile 1-octadecene to manoeuvre the growth conditions to promote Ostwald ripening, a single phase, monodispersive and nearly stoichiometric ternary CISe nanocrystals are formed by wet-synthesis route. - Highlights: • Wet-route synthesis of CISe nanocrystals reported without post-selenization process. • Single-phase, stable and well-passivated colloidal ternary CISe nanocrystals formed. • Novel combination of capping agents: volatile aniline and non-volatile 1-octadecene. • Higher growth temperature attained using the colligative properties of the mixture. • Metallic salts presence explains exp. and theoretical boiling point difference.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2015

Synthetic and spectroscopic studies of vanadate glaserites II: Photoluminescence studies of Ln:K{sub 3}Y(VO{sub 4}){sub 2} (Ln=Eu, Er, Sm, Ho, or Tm)

Glaserite-type potassium yttrium double vanadates (K{sub 3}Y(VO{sub 4}){sub 2}) doped with Eu{sup 3+}, Er{sup 3+}, Sm{sup 3+}, Ho{sup 3+}, or Tm{sup 3+} have been synthesized by solid state reactions at 1000 °C for 48 h and their photoluminescence properties investigated. Efficient energy transfer from the vanadate group to the rare earth ion has been established by photoluminescence investigation. Ultraviolet excitation into the metal to ligand charge transfer band of the vanadate groups results in orange-red, blue and green emissions from Eu{sup 3+} (592 nm), Sm{sup 3+} (602 nm), Tm{sup 3+} (475 nm), Er{sup 3+} (553 nm), and Ho{sup 3+} (541–551 nm) dopant ions. The emission intensities of the lanthanide-doped K{sub 3}Y(VO{sub 4}){sub 2} powders were studied as a function of dopant ion concentrations. Over the concentration ranges studied, no emission quenching was observed for Eu{sup 3+} or Ho{sup 3+} dopants, while Er{sup 3+}, Sm{sup 3+} and Tm{sup 3+} dopants did exhibit such effects for dopant ion concentrations greater than 5%, probably due to cross relaxation processes. - Graphical abstract: Synthesis and photoluminescence in vanadate glaserites. - Highlights: • K{sub 3}Y(VO{sub 4}){sub 2} doped with Eu, Er, Tm, Sm, or Ho were synthesized via solid-state reactions. • Photoluminescence properties are investigated. • The lanthanide doped K{sub 3}Y(VO{sub 4}){sub 2} compounds revealed efficient energy transfer from the vanadate group to the rare earth ions. • The presented compounds are promising materials for light display systems, lasers, and optoelectronic devices.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2016

Tl{sub 10}Hg{sub 3}Cl{sub 16}: Single crystal growth, electronic structure and piezoelectric properties

Single crystal of the ternary halide Tl{sub 10}Hg{sub 3}Cl{sub 16} was grown using Bridgman-Stockbarger method. For the Tl{sub 10}Hg{sub 3}Cl{sub 16} crystal, we have measured X-ray photoelectron spectra for both pristine and Ar{sup +} ion-bombarded surfaces and additionally investigated photoinduced piezoelectricity. Our data indicate that the Tl{sub 10}Hg{sub 3}Cl{sub 16} single crystal surface is very sensitive with respect to Ar{sup +} ion-bombardment. In particular, Ar{sup +} ion-bombardment with energy of 3.0 keV over 5 min at an ion current density of 14 μA/cm{sup 2} causes significant changes of the elemental stoichiometry of the Tl{sub 10}Hg{sub 3}Cl{sub 16} surface resulting in an abrupt decrease of the mercury content in the top surface layers of the studied single crystal. As a result of the treatment, the mercury content becomes nil in the top surface layers. In addition, the present XPS measurements allow for concluding about very low hygroscopicity of the Tl{sub 10}Hg{sub 3}Cl{sub 16} single crystal surface. The property is extremely important for the crystal handling in optoelectronic or nano-electronic devices working at ambient conditions. The photoinduced piezoelectricity has been explored for Tl{sub 10}Hg{sub 3}Cl{sub 16} depending on nitrogen (λ=371 nm) laser power density and temperature. - Graphical abstract: As-grown single crystal boule of Tl{sub 10}Hg{sub 3}Cl{sub 16}; dependence of the effective piezoelecric coefficient d{sub 33} versus the photoinducing nitrogen laser power density, I, at different temperatures, T; and packing of the polyhedra of halide atoms around Hg atoms in the Tl{sub 10}Hg{sub 3}Cl{sub 16} structure. - Highlights: • High-quality Tl{sub 10}Hg{sub 3}Cl{sub 16} single crystal has been grown by Bridgman-Stockbarger method. • Electronic structure of Tl{sub 10}Hg{sub 3}Cl{sub 16} is studied by the XPS method. • Tl{sub 10}Hg{sub 3}Cl{sub 16} single crystal surface is sensitive with respect to Ar{sup +} ion-bombardment. • Very low hygroscopicity is characteristic of the Tl{sub 10}Hg{sub 3}Cl{sub 16} surface. • Photoinduced piezoelectricity is studied for the Tl{sub 10}Hg{sub 3}Cl{sub 16} compound.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗