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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 1,639 records · Page 91
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DOE OSTI2018

Unraveling thickness-dependent spin relaxation in colossal magnetoresistance manganite films

In this paper, we used ultrafast optical spectroscopy to study photoinduced spin relaxation in 10–100 nm thick La 0.7 Ca 0.3 MnO 3 films. The spin-lattice relaxation time displays a strong dependence on thickness below the Curie temperature. Our simulations show that the observed thickness-dependent relaxation results from much faster thermal decay through the substrate in thinner films that leads to artificially faster demagnetization. Furthermore, we provide an analytical approach to gain insight into the spin-lattice relaxation time for highly thermal dissipative films. Finally, our study strongly suggests that careful consideration of the influence of transient thermal variations on photoinduced demagnetization is mandatory when incorporating absorbing thin magnetic films into heterostructures and devices.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Crystal-phase intergradation in InAs nanostructures grown by van der Waals heteroepitaxy on graphene

In this study, we demonstrate the crystal-phase intergradation of InAs nanostructures grown on graphene via van der Waals epitaxy. InAs nanostructures with diverse diameters are yielded on graphene. High-resolution transmission electron microscopy (HR-TEM) reveals two crystallographic features of (i) wurtzite (WZ)-to-zinc blende (ZB) intergradation along the growth direction of InAs nanostructures and (ii) an increased mean fraction of ZB according to diameter increment. Based on the HR-TEM observations, a crystal-phase intergradation diagram is depicted. We discuss how the formation of a WZ-rich phase during the initial growth stage is an effective way of releasing heterointerfacial stress endowed by the lattice mismatch of InAs/graphene for energy minimization in terms of less in-plane lattice mismatching between WZ-InAs and graphene. Lastly, the WZ-to-ZB evolution is responsible for the attenuation of the bottom-to-top surface charge interaction as growth proceeds.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Magnetic phase dependence of the anomalous Hall effect in Mn 3 Sn single crystals

Thermodynamic and transport properties are reported on single crystals of the hexagonal antiferromagnet Mn 3 Sn grown by the Sn flux technique. Magnetization measurements reveal two magnetic phase transitions at T 1 = 275 K and T 2 = 200 K, below the antiferromagnetic phase transition at T N ≈ 420 K. The Hall conductivity in zero magnetic field is suppressed dramatically from 4.7 Ω -1 cm -1 to near zero below T 1 , coincident with the vanishing of the weak ferromagnetic moment. Finally, this illustrates that the large anomalous Hall effect arising from the Berry curvature can be switched on and off by a subtle change in the symmetry of the magnetic structure near room temperature.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Comparison of the electronic and thermoelectric properties of three layered phases Bi 2 Te 3 , PbBi 2 Te 4 and PbBi 4 Te 7 : LEGO thermoelectrics

The electronic and thermoelectric properties of Bi 2 Te 3 , PbBi 2 Te 4 and PbBi 4 Te 7 were examined on the basis of density functional theory (DFT) calculations and thermoelectric transport property measurements. The layered phase PbBi 4 Te 7 is composed of the slabs forming the layered phases Bi 2 Te 3 and PbBi 2 Te 4 . The electronic structure of PbBi 4 Te 7 around the valence band maximum and conduction band minimum exhibits those of Bi 2 Te 3 and PbBi 2 Te 4 . The band gap of PbBi 4 Te 7 lies in between those of Bi 2 Te 3 and PbBi 2 Te 4 , and the density of states of PbBi 4 Te 7 is well approximated by the sum of those of Bi2Te3 and PbBi 2 Te 4 . In terms of the carrier concentration, the carrier mobility, the carrier lifetime, the electrical conductivity normalized to the carrier lifetime, and the effective mass, the layered phases Bi 2 Te 3 , PbBi 2 Te 4 and PbBi 4 Te 7 form a group of thermoelectrics, which have the structures composed of several different slabs and whose thermoelectric properties are approximated by the average of those of the constituent slabs. We propose to use the term “LEGO thermoelectrics” to describe such a family of thermoelectric materials that operate in a desired temperature range and possess predictable thermoelectric properties.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Hydrogen oxidation kinetics on platinum-palladium bimetallic thin films for solid acid fuel cells

Solid acid fuel cells (SAFCs) based on the proton-conductive electrolyte CsH 2 PO 4 have shown promising power densities at an intermediate operating temperature of ~250 °C. However, Pt loadings in SAFCs remain higher than desirable, and the electrocatalysis mechanisms in these devices are still unknown. Here, hydrogen oxidation kinetics on Pt and Pt-Pd bimetallic thin film electrodes on CsH 2 PO 4 have been evaluated to establish the potential for a beneficial role of Pd in SAFC anodes. Symmetric cells fabricated by depositing a metal film on both sides of electrolyte discs are characterized for studying hydrogen electro-oxidation across the gas|metal|CsH 2 PO 4 structure. It was found that Pd reacts with CsH 2 PO 4 , forming palladium phosphide at the metal-electrolyte interface. Accordingly, the activity of Pd was examined in a bilayer geometry of Pd|Pt|CsH 2 PO 4 |Pt|Pd. The bilayer Pt|Pd films showed much higher activity for hydrogen electro-oxidation than films of Pt alone, as measured by AC impedance spectroscopy. Ex situ low energy ion scattering and scanning transmission electron microscopy revealed that Pd diffused into the Pt layer under operating conditions. The dramatic impact of Pd along with its presence throughout the film suggests that it catalyzes reactions at both the metal-gas and metal-electrolyte interfaces, as well as increasing hydrogen diffusion rates through the films.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Beta gallium oxide (β-Ga 2 O 3 ) nanoelectromechanical transducer for dual-modality solar-blind ultraviolet light detection

Empowered by an ultrawide bandgap ( E g = 4.5–4.9 eV), beta gallium oxide (β-Ga 2 O 3 ) crystal is an ideal material for solar-blind ultraviolet (SBUV, λ < 280 nm) detection. Here, we report on the first demonstration of dual-modality SBUV light sensing integrated in the same device enabled by multi-physics coupling across photo-electrical and photo-thermo-mechanical domains. The specially designed suspended β-Ga 2 O 3 nanoelectromechanical systems (NEMS) transducer reveals dual-modality responses, with a photocurrent responsivity of 4 mA/W and a frequency shift responsivity of 250 Hz/nW, upon SBUV light exposure. An additional demonstration of a β-Ga 2 O 3 photo-field-effect transistor exhibits a boosted responsivity of 63 A/W. Analysis on the device suggests that reducing the thickness and length of the transducer could further improve the SBUV light sensing responsivities for both modalities. The demonstration could pave the way for future realization of SBUV detectors with dual modalities for enhanced detection fidelity, or respectively optimized for different sensing scenarios.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Vibrational and electron-phonon coupling properties of $β$-Ga 2 O 3 from first-principles calculations: Impact on the mobility and breakdown field

The wide band gap semiconductor $β$-Ga 2 O 3 shows promise for applications in high-power and high-temperature electronics. The phonons of $β$-Ga 2 O 3 play a crucial role in determining its important material characteristics for these applications such as its thermal transport, carrier mobility, and breakdown voltage. In this work, we apply predictive calculations based on density functional theory and density functional perturbation theory to understand the vibrational properties, phonon-phonon interactions, and electron-phonon coupling of $β$-Ga 2 O 3 . We calculate the directionally dependent phonon dispersion, including the effects of LO-TO splitting and isotope substitution, and quantify the frequencies of the infrared and Raman-active modes, the sound velocities, and the heat capacity of the material. Our calculated optical-mode Grüneisen parameters reflect the anharmonicity of the monoclinic crystal structure of $β$-Ga 2 O 3 and help explain its low thermal conductivity. We also evaluate the electron-phonon coupling matrix elements for the lowest conduction band to determine the phonon mode that limits the mobility at room temperature, which we identified as a polar-optical mode with a phonon energy of 29 meV. We further apply these matrix elements to estimate the breakdown field of $β$-Ga 2 O 3 . Our theoretical characterization of the vibrational properties of $β$-Ga 2 O 3 highlights its viability for high-power electronic applications and provides a path for experimental development of materials for improved performance in devices.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Thermal conductivity of MoS 2 monolayers from molecular dynamics simulations

Quantification of lattice thermal conductivity of two-dimensional semiconductors like MoS 2 is necessary for the design of electronic and thermoelectric devices, but direct experimental measurements on free-standing samples is challenging. Molecular dynamics simulations, with appropriate corrections, can provide a reference value for thermal conductivity for these material systems. Here, we construct a new empirical forcefield of the Stillinger-Weber form, parameterized to phonon dispersion relations, lattice constants and elastic moduli and we use it to compute a material-intrinsic thermal conductivity of 38.1 W/m-K at room temperature and estimate a maximum thermal conductivity of 85.4 W/m-K at T = 200 K. We also identify that phonon scattering by the large isotopic mass distribution of Mo and S contributes a significant correction (>45%) to the thermal conductivity at low temperatures.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Enhancement of the open circuit voltage of Cu 2 O/Ga 2 O 3 heterojunction solar cells through the mitigation of interfacial recombination

Thin film solar cells were fabricated using cuprous oxide (Cu 2 O) absorber layers grown by chemical vapor deposition (CVD) and gallium oxide (Ga 2 O 3 ) buffer layers grown by atomic layer deposition (ALD) on the cuprous oxide CVD films. The in-situ formation of heterojunction in the same deposition system without exposure to oxygen-rich ambient was found to be effective in mitigating the creation of detrimental cupric oxide (CuO) at the interface, resulting in a pristine photovoltaic junction capable of delivering an enhanced open-circuit voltage of 1.78 V. Numerical device simulations of a novel two-layer absorber architecture (CVD-Cu 2 O on ECD-Cu 2 O) showed promising possibilities (theoretical 13.2 % efficiency) for a solar cell combining in-situ junction formation with electrochemical deposition of the absorber layer.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Detection of Rashba spin splitting in 2D organic-inorganic perovskite via precessional carrier spin relaxation

The strong spin-orbit interaction in the organic-inorganic perovskites tied to the incorporation of heavy elements (e.g., Pb and I) makes these materials interesting for applications in spintronics. In conjunction with a lack of inversion symmetry associated with distortions of the metal-halide octahedra, surfaces and interfaces, or the application of a bias, the Rashba effect (used in spin field-effect transistors and spin filters) has been predicted to be much larger in these materials than in traditional III-V semiconductors such as GaAs. Evidence of strong Rashba coupling has been observed in both 3D (bulk) and 2D perovskites, with the relative role of bulk and surface Rashba contributions in the former case under active debate. The varying size of the reported spin splittings points to the need for more experimental studies of Rashba effects in the organic-inorganic perovskite family of materials. Here, we apply time-resolved circular dichroism techniques to the study of carrier spin dynamics in a 2D perovskite thin film [(BA)2MAPb2I7; BA = CH3(CH2)3NH3, MA = CH3NH3]. Our findings confirm the presence of a Rashba spin splitting via the dominance of precessional spin relaxation induced by the Rashba effective magnetic field (also known as D’yakonov Perel spin relaxation). The size of the Rashba spin splitting in our system was extracted from simulations of the measured spin dynamics incorporating LO-phonon and electron-electron scattering, yielding a value of 10 meV at an electron energy of 50 meV above the band gap, representing a 20 times larger value than in GaAs quantum wells.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Understanding thermal annealing of artificial spin ice

Here, we have performed a detailed study on thermal annealing of the moment configuration in artificial spin ice. Permalloy (Ni 80 Fe 20 ) artificial spin ice samples were examined in the prototypical square ice geometry, studying annealing as a function of island thickness, island shape, and annealing temperature and duration. We also measured the Curie temperature as a function of film thickness, finding that thickness has a strong effect on the Curie temperature in regimes of relevance to many studies of the dynamics of artificial spin ice systems. Increasing the interaction energy between island moments and reducing the energy barrier to flipping the island moments allow the system to more closely approach the collective low energy state of the moments upon annealing, suggesting new channels for understanding the thermalization processes in these important model systems.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Enhanced magnetocaloric performance in manganite bilayers

Bilayer films of La 0.8 Sr 0.2 MnO 3 and La 0.7 Ca 0.3 MnO 3 with different layer thicknesses and stacking sequences were synthesized via pulsed laser deposition. The magnetic properties and magnetocaloric effects were systematically investigated. We found that the phase transition associated with the layers tends to merge together at an optimal thickness and a stacking sequence. The operating temperature span of the entropy change broadens at the expense of its magnitude, leading to an enhancement of the refrigerant capacity by over 40%. The optimized bilayer film possesses a refrigerant capacity of ~6.0J/kg, compared to a value of ~4.2J/kg for the single-phase films. The phase transition broadening induced by epitaxial strain is responsible for the enhanced window of operating temperature as well as refrigerant capacity. Finally, the design principle developed here may be applied to ferroelastic and ferroelectric materials to enhance elastocaloric and electrocaloric effects.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Domain wall diode based on functionally graded Dzyaloshinskii–Moriya interaction

In this work, we present a general approach for studying the dynamics of domain walls in biaxial ferromagnetic stripes with functionally graded Dzyaloshinskii–Moriya interaction (DMI). By engineering the spatial profile of the DMI parameter we propose the concept of a diode, which implements filtering of domain walls of certain topological charge and helicity. We base our study on phenomenological Landau–Lifshitz–Gilbert equations with additional Zhang–Li spin-transfer terms using a collective variable approach. In the effective equations of motion the gradients of DMI play the role of a driving force which competes with current driving. All analytical predictions are confirmed by numerical simulations.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Anisotropic domains and antiferrodistortive-transition controlled magnetization in epitaxial manganite films on vicinal SrTiO 3 substrates

We studied the microstructural evolution and magnetism of ferroelastic La 0.9 Sr 0.1 MnO 3 (LSMO) epitaxial thin films grown on SrTiO 3 (001) substrates with different miscut angles. The substrate miscut angle plays a critical role in controlling the in-plane magnetic anisotropy. The microscopic origin of such magnetic anisotropy is attributed to the formation of anisotropic stripe domains along the surface step terraces. The magnetization in the LSMO films was found to be selectively modulated by the antiferrodistortive phase transition of the SrTiO 3 substrate. This phenomenon has been qualitatively explained by a strain modified Stoner–Wohlfarth model. We conclude that the magnetization modulation by the SrTiO 3 phase transition depends on h, the ratio of applied magnetic field to the saturation field. Such modulation is only visible with h < 1. The established domain microstructure–anisotropy–magnetism correlation in manganite films can be applied to a variety of complex oxide thin films on vicinal substrates.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Substrate oxygen sponge effect: A parameter for epitaxial manganite thin film growth

The emergent phenomena in complex oxide thin films are strongly tied to the oxygen content, which is often engineered by the oxygen partial pressure during growth. However, such oxygen control by the growth pressure is challenging to synthesize for some oxide films, which requires a subtle control of the oxygen content. A parameter of controlling the oxygen content independent of the growth pressure is desired. Here, we propose a method of controlling the oxygen content of films by engineering the substrate before the growth. The oxide substrate serves as an oxygen sponge, which provides a tunable oxygen environment ranging from oxygen-rich to oxygen-poor for the film growth, depending on the pre-substrate annealing (PSA) conditions. Using manganite as a model system, we demonstrate that this simple PSA method leads to remarkable changes in the structure and physical properties of the as-grown films. Finally, this substrate oxygen sponge effect, driven by the large oxygen concentration gradient at high temperatures, can be applied to explore not only emergent interfacial phenomena but also the growth of a variety of functional oxide thin films and nanocomposites.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Observation of interacting polaronic gas behavior in Ta-doped TiO 2 thin films via terahertz time-domain spectroscopy

Transparent conductive oxides (TCOs)—materials that have the twin desirable features of high optical transmission and electrical conductivity—play an increasingly significant role in the fields of photovoltaics and information technology. As an excellent TCO, Ta-doped anatase TiO 2 shows great promise for a wide range of applications. Here, terahertz time-domain spectroscopy is used to study the complex optical conductivity $\tilde{σ}$ (ω) of the TCO—heavily Ta-doped TiO 2 thin films with different Ta-doping concentrations, in the frequency range of 0.3–2.7 THz and the temperature range of 10–300 K. Fitting the complex optical conductivity to a Drude-like behavior allows us to extract the temperature dependence of the effective mass, which suggests the existence of many-body large polarons. Moreover, the carrier scattering rate of Ta-doped TiO 2 with different carrier concentrations agrees with the interacting polaron gas theory. Our results suggest that with increasing electron density in TiO 2 , the interaction between polarons is larger and electron–phonon coupling is smaller, which is beneficial for achieving high mobility and conductivity in TiO 2 .

36 MATERIALS SCIENCE↗
DOE OSTI2021

Improved control of atomic layering in perovskite-related homologous series

Homologous series are layered phases that can have a range of stoichiometries depending on an index n. Examples of perovskite-related homologous series include (ABO 3 )nAO Ruddlesden–Popper phases and (Bi 2 O 2 ) (A n-1 B n O 3n+1 ) Aurivillius phases. It is challenging to precisely control n because other members of the homologous series have similar stoichiometry and a phase with the desired n is degenerate in energy with syntactic intergrowths among similar n values; this challenge is amplified as n increases. To improve the ability to synthesize a targeted phase with precise control of the atomic layering, we apply the x-ray diffraction (XRD) approach developed for superlattices of III–V semiconductors to measure minute deviations from the ideal structure so that they can be quantitatively eradicated in subsequent films. We demonstrate the precision of this approach by improving the growth of known Ruddlesden–Popper phases and ultimately, by synthesizing an unprecedented n = 20 Ruddlesden–Popper phase, (ATiO 3 ) 20 AO where the A-site occupancy is Ba 0.6 Sr 0.4 . We demonstrate the generality of this method by applying it to Aurivillius phases and the Bi 2 Sr 2 Ca n–1 Cu n O 2n+4 series of high-temperature superconducting phases.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Atomic scale investigation of aluminum incorporation, defects, and phase stability in β -(Al x Ga 1-x ) 2 O 3 films

The development of novel ultra-wide bandgap (UWBG) materials requires precise understanding of the atomic level structural origins that give rise to their important properties. We study the aluminum atom incorporation, defect formation, and their relationships with phase stability in β-(Al x Ga 1-x ) 2 O 3 films, a promising candidate for UWBG applications, to explain atomic scale structural characteristics and properties using a combination of quantitative scanning transmission electron microscopy (STEM) and density functional theory (DFT). Our STEM analysis indicates that ~54% of the incorporated Al substitutes on the octahedrally coordinated Ga 2 site in a series of films grown with different techniques and alloy concentrations. DFT calculations show that, while Al energetically prefers the octahedral site, surface reconstructions and kinetic limitations during the epitaxial growth are responsible for Al occupying both octahedral and tetrahedral sites in (Al x Ga 1-x ) 2 O 3 , ultimately limiting the stability of the β-phase at x < ~50%. Local heterogeneity of composition results in the formation of a planar defect, affecting the stability of the β-phase. The similarity of such inclusions to the metastable γ-phase is discussed.

36 MATERIALS SCIENCE↗