Field-induced domain wall motion of amorphous [CoSiB/Pt]{sub N} multilayers with perpendicular anisotropy
Amorphous CoSiB/Pt multilayer is a perpendicular magnetic anisotropy material to achieve high squareness, low coercivity, strong anisotropy, and smooth domain wall (DW) motion, because of the smoother interface compared with crystalline multilayers. For [CoSiB(6 Å)/Pt (14 Å)]{sub N} multilayers with N = 3, 6, and 9, we studied the field-induced DW dynamics. The effective anisotropy constant K{sub 1}{sup eff} is 1.5 × 10{sup 6} erg/cm{sup 3} for all the N values, and the linear increment of coercive field H{sub c} with N gives constant exchange coupling J. By analyzing the field dependence of DW images at room temperature, a clear creep motion with the exponent μ = 1/4 could be observed. Even though the pinning field H{sub dep} slightly increases with N, the pinning potential energy U{sub c} is constant (=35 k{sub B}T) for all the N values. These results imply that the amorphous [CoSiB/Pt]{sub N} multilayers are inherently homogeneous compared to crystalline multilayers. For N ≤ 6, the pinning site density ρ{sub pin} is less than 1000/μm{sup 2}, which is about 1 pinning site per the typical device junction size of 30 × 30 nm{sup 2}. Also, the exchange stiffness constant A{sub ex} is obtained to be 0.48 × 10{sup −6} erg/cm, and the domain wall width is expected to be smaller than 5.5 nm. These results may be applicable for spin-transfer-torque magnetic random access memory and DW logic device applications.