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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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Gallium Nitride Superjunction Fin Field Effect Transistor (Continued Funding Report)
The goal of this project is to develop the gallium vacancy assisted diffusion (GAID) method in GaN and apply it to demonstrate 2-terminal, 3-terminal, and large area Superjunction-enhanced modules. These devices will find use in high efficiency power conversion applications with the capability of operating at higher voltages, higher frequency, and less loss than comparable stat-of- the-art devices.
Vertical Gallium Nitride (GaN) Transistors For Extreme Environments
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Vertical Gallium nitride transistors for extreme environment operation
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Monolithically Integrated GaN Nanoscale Air Channel Field Emission Diode and Transistor.
Abstract not provided.
Modeling and Assessment of Atomic Precision Advanced Manufacturing (APAM) Enabled Vertical Tunneling Field Effect Transistor.
Abstract not provided.
Manufacturing an Extremely Efficient Transistor for Decarbonization.
Abstract not provided.
AlGaN High Electron Mobility Transistor for Power Switches and High Temperature Logic.
Abstract not provided.
Ultra-wide Bandgap AlGaN Alloys for Power Diodes and Transistors (invited).
Abstract not provided.
Data-Driven Compact Modeling of Bipolar Junction Transistors with Recurrent Neural Networks.
Abstract not provided.
Proton Tunable Analog Transistor for Low Power Computing
This project was broadly motivated by the need for new hardware that can process information such as images and sounds right at the point of where the information is sensed (e.g. edge computing). The project was further motivated by recent discoveries by group demonstrating that while certain organic polymer blends can be used to fabricate elements of such hardware, the need to mix ionic and electronic conducting phases imposed limits on performance, dimensional scalability and the degree of fundamental understanding of how such devices operated. As an alternative to blended polymers containing distinct ionic and electronic conducting phases, in this LDRD project we have discovered that a family of mixed valence coordination compounds called Prussian blue analogue (PBAs), with an open framework structure and ability to conduct both ionic and electronic charge, can be used for inkjet-printed flexible artificial synapses that reversibly switch conductance by more than four orders of magnitude based on electrochemically tunable oxidation state. Retention of programmed states is improved by nearly two orders of magnitude compared to the extensively studied organic polymers, thus enabling in-memory compute and avoiding energy costly off-chip access during training. We demonstrate dopamine detection using PBA synapses and biocompatibility with living neurons, evoking prospective application for brain - computer interfacing. By application of electron transfer theory to in-situ spectroscopic probing of intervalence charge transfer, we elucidate a switching mechanism whereby the degree of mixed valency between N-coordinated Ru sites controls the carrier concentration and mobility, as supported by density functional theory (DFT) .
Gallium Nitride Superjunction Transistor (Continued Funding Report)
The initial goal of this project is to develop the gallium vacancy assisted diffusion (GAID) method in GaN and apply it to demonstrate 2-terminal, 3-terminal, and large area Superjunction-enhanced modules. These devices will find use in high efficiency power conversion applications with the capability of operating at higher voltages, higher frequency, and less loss than comparable stat-ofthe-art devices. The approach of this project has been to utilize simulation tools to drive diffusion experiments and inform semiconductor device fabrication processes. VASP has been relied upon to simulate first principles diffusion mechanisms while SILVACO TCAD has been utilized to understand tradeoffs of the the critical dimensions in GaN devices.
AlGaN Transistors for Digital Logic Applications in High-Temperature Environments.
Abstract not provided.
Initial Stages of Time-Dependent Dielectric Breakdown: Atomic Scale Defects Generated by High-Field Gate Stressing in Si/SiO2 Transistors.
Abstract not provided.