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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 1,639 records · Page 91
All sourcesNASA NTRSDOE OSTI
DOE OSTI2016

Development of metal oxide impregnated stilbite thick film ethanol sensor

This paper presents the study of the sensing efficiency of Titanium oxide/ Stilbite and Copper oxide /Stilbite composites towards detection of hazardous pollutants like ethanol. Stilbite based composites are prepared by physically mixing zeolite with metal oxides namely TiO{sub 2} and CuO with weight ratios of 25:75, 50:50 and 75:25. The resulting sensor materials are characterized by X-ray diffraction and Fourier Transform Infrared Spectroscopy techniques. Composite sensors are fabricated in the form of thick film by using screen printing technique. The effect of metal oxide concentration on various ethanol sensing parameters such as operating temperature, maximum uptake capacity and response/recovery time are investigated. The results indicate that metal oxide impregnated stilbite composites have great potential as low temperature ethanol sensor.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2016

Thick homoepitaxial (110)-oriented phosphorus-doped n-type diamond

The fabrication of n-type diamond is essential for the realization of electronic components for extreme environments. We report on the growth of a 66 μm thick homoepitaxial phosphorus-doped diamond on a (110)-oriented diamond substrate, grown at a very high deposition rate of 33 μm h{sup −1}. A pristine diamond lattice is observed by high resolution transmission electron microscopy, which indicates the growth of high quality diamond. About 2.9 × 10{sup 16} cm{sup −3} phosphorus atoms are electrically active as substitutional donors, which is 60% of all incorporated dopant atoms. These results indicate that P-doped (110)-oriented diamond films deposited at high growth rates are promising candidates for future use in high-power electronic applications.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2018

Tri-stage quasimonoenergetic proton acceleration from a multi-species thick target

We show that quasimonoenergetic proton beams can be generated through a multi-ion thick target irradiated by a circularly polarized laser pulse. After disrupted by the transverse instabilities in the laser pressure acceleration process, heavy ions as majority species can still provide a co-moving electric field. Different from the dynamics using ultrathin foil, protons with small doped rates can experience a full tri-stage quasimonoenergetic acceleration (hole boring, sheath boosting, and free expansion stages) in this scenario. A theoretical model is developed to explain the proton energy evolution in detail and verified by two-dimensional particle-in-cell simulations. Finally, the scaling of proton energy with laser intensity indicates that the 200 MeV proton beam with narrow energy spread (3%–10%) and sufficiently large charges (10 10 –10 11 ) required for medical applications can be obtained using 100s TW class laser systems in near future.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2018

Experimental collaboration for thick concrete structures with alkali-silica reaction

Alkali-Silica Reaction (ASR) is a reaction that occurs over time in concrete between alkaline cement paste and reactive, non-crystalline silica in aggregates. An expansive gel is formed within the aggregates which results in micro-cracks in aggregates and adjacent cement paste. The reaction requires the presence of water and has been predominantly detected in groundwater-impacted portions of below grade structures, with limited impact to exterior surfaces in above grade structures. ASR can potentially affect concrete properties and performance characteristics such as compressive strength, modulus of elasticity, shear strength, and tensile strength. Since ASR degradation often takes significant amounts of time, developing ASR detection techniques is important to the sustainability and extended operation lifetimes of nuclear power plants (NPPs). The University of Tennessee, Knoxville (UTK) in collaboration with Oak Ridge National Laboratory (ORNL) designed and built an experiment representative of typical NPP structures to study ASR in thick concrete structures.

Ezell, N Dianne Bull↗
DOE OSTI2018

Anisotropic modeling and joint-MAP stitching for improved ultrasound model-based iterative reconstruction of large and thick specimens

One-sided non-destructive evaluation (NDE) is widely used to inspect materials, such as concrete structures in nuclear power plants (NPP). A widely used method for one-sided NDE is the synthetic aperture focusing technique (SAFT). The SAFT algorithm produces reasonable results when inspecting simple structures. However, for complex structures, such as heavily reinforced thick concrete structures, SAFT results in artifacts and hence there is a need for a more sophisticated inversion technique. Model-based iterative reconstruction (MBIR) algorithms, which are typically equivalent to regularized inversion techniques, offer a powerful framework to incorporate complex models for the physics, detector miscalibrations and the materials being imaged to obtain high quality reconstructions. Previously, we have proposed an ultrasonic MBIR method that signifcantly improves reconstruction quality compared to SAFT. However, the method made some simplifying assumptions on the propagation model and did not disucss ways to handle data that is obtained by raster scanning a system over a surface to inspect large regions. In this paper, we propose a novel MBIR algorithm that incorporates an anisotropic forward model and allows for the joint processing of data obtained from a system that raster scans a large surface. We demonstrate that the new MBIR method can produce dramatic improvements in reconstruction quality compared to SAFT and suppresses articfacts compared to the perviously presented MBIR approach.

Almansouri, Hani↗
DOE OSTI2018

Dislocation baskets in thick In x Ga 1–x N epilayers

Dislocation clusters have been observed in thick In x Ga 1–x N films with 0.07 ≤ x ≤ 0.12. The clusters resemble baskets with a higher indium content at their interior. Threading dislocations at the basket boundaries are of the misfit edge type, and their separation is consistent with misfit strain relaxation due to the difference in indium content between the baskets and the surrounding matrix. The interior of the base of the baskets reflects no observable dislocations connecting the threading dislocations, and often no net displacements like those due to stacking faults. We believe that the origin of these threading dislocation arrays is associated with misfit dislocations at the basal plane that dissociate, forming stacking faults. And when the stacking faults form simultaneously satisfying the crystal symmetry, the sum of their translation vectors add up to a lattice vector, or equivalently to no change in the stacking sequence, which is consistent with our observations.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Lateral charge carrier transport properties of B-10 enriched hexagonal BN thick epilayers

Neutron detectors based on B-10 enriched hexagonal boron nitride (h- 10 BN or h-BN) epilayers have demonstrated the highest thermal neutron detection efficiency among solid-state neutron detectors at about 58%. However, many fundamental transport parameters of h-BN, including the room temperature carrier mobility, minority carrier lifetime, and surface recombination velocity, which are essential to the performance of detectors, are still unknown. Here, we report here the carrier drift mobilities ( μ ) and lifetimes (τ) of both electrons and holes in h- 10 BN epilayers measured by using a time-of-flight (TOF) technique. Lateral photoconductive type detectors fabricated from a 65 μm thick freestanding h- 10 BN epilayer were utilized to carry out the TOF measurements, which revealed μ e ~34 cm 2 /V s for electrons and μ h ~36 cm 2 /V s for holes and carrier lifetimes on the order of tens of microseconds. By combining the values of μ measured from TOF with S /μ (the ratio of the surface recombination velocity to mobility) deduced directly from the bias voltage dependence of photocurrent, S for both electrons ( S e ~1.4 × 10 4 cm/s) and holes ( S h ~2.7 × 10 3 cm/s) in h- 10 BN has been extracted. The determination of these important fundamental parameters (μ, τ, and S ) not only provides a better understanding of the carrier dynamics and electrical transport properties of h-BN but is also valuable for further advancing the development of h-BN materials and devices.

15 GEOTHERMAL ENERGY↗
DOE OSTI2020

High frequency lithium niobate film-thickness-mode optomechanical resonator

High-frequency optomechanical resonators are in demand as transduction devices to bridge microwave and optical fields. Thin-film lithium niobate is a promising platform for implementing high-frequency optomechanics for its low optical loss and strong piezoelectric coefficients. However, its strong piezoelectricity is also known to introduce excess phonon loss. Here, we present lithium niobate optomechanical resonators with film-thickness-mode mechanical resonances up to 5.2 GHz, reaching the operating frequency regime of superconducting qubits. By engineering the mechanical anchor to minimize the phonon loss, we achieve a high quality factor up to 12 500 at cryogenic temperatures and, hence, a frequency-quality factor product of 6.6 × 10 13 . Our system also features interference between piezo-optomechanical and electro-optic modulation. A theoretical model is derived to analyze these two effects and their interference.

42 ENGINEERING↗
DOE OSTI2020

Wide bandwidth frequency-domain thermoreflectance: Volumetric heat capacity, anisotropic thermal conductivity, and thickness measurements

A frequency-domain thermoreflectance (FDTR) system with a frequency range of 1 Hz to 75 MHz is presented. The wide bandwidth of pump modulation frequency enables enhanced simultaneous thermophysical property characterization of bulk and thin-film materials. The wide bandwidth FDTR system is demonstrated with simultaneous measurements of in-plane and cross-plane thermal conductivities of sapphire and muscovite mica, thickness and thermal conductivity of gold/titanium thin films, and isotropic thermal conductivity and volumetric heat capacity of lithium niobate and silicon. Thermophysical properties measured with FDTR are compared to literature values or independent measurements for verification. Finally, at low frequencies, a negligible error was achieved in the numerical integration of the heat diffusion equation with a Gauss–Legendre quadrature method solved with 400 integration points and an upper integration limit of 16weff, where weff is the effective pump–probe 1/e2 radius.

Ziade, Elbara (ORCID:0000000249020497)↗
DOE OSTI2021

Role of deep levels and barrier height lowering in current-flow mechanism in 150 μ m thick epitaxial n-type 4H–SiC Schottky barrier radiation detectors

Schottky barrier detectors (SBDs) require larger surface areas than conventional electronics to increase the detection efficiency although such SBDs manifest large diode ideality factors due to inhomogeneous areal distribution of surface barrier height (SBH). Inhomogeneous SBH distributions lead to various current flow mechanisms in SBDs, which need to be identified to optimize detector performance. In this Letter, we identify the current flow mechanism in large area Schottky barrier diodes for radiation detection fabricated on 150 μm thick n-4H–SiC epitaxial layers. The analysis of temperature-dependent forward current–voltage (I–V–T) characteristics of SBDs revealed two linear regions in current–voltage curves up to 450 K, one corresponding to the current flow through a low barrier patch, while the other corresponds to that of average barrier distribution. Applying a SBH distribution model to the reverse I–V–T characteristics, an activation energy of 0.76 eV for the current flow over the Schottky barrier was calculated. Additionally, the activation energy did not directly correspond to any of the defect levels observed from the deep level transient spectroscopy (DLTS). Above 450 K, a Schottky type barrier lowering suggested a current flow through a low barrier patch of ≈ 0.8 eV. The absence of any SBH lowering below 450 K indicated that the current corresponded to a neutrally charged trap level at ≈ 0.6 eV below the conduction band edge, which was consistent with DLTS measurements revealing the presence of an electron trap level Z1/2 at 0.59 eV below the conduction band edge.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2022

Compensating cylindrical Hohlraum mode 4 asymmetry via capsule thickness tailoring and effects on implosions

We report previously, hydrodynamic simulations suggested that precisely tailoring the capsule ablator thickness (shimming) could counterbalance cylindrical Hohlraum Legendre P 4 drive asymmetries at the capsule in laser indirect drive implosions. As a result, the stagnated deuterium–tritium (DT) fuel areal density P 4 asymmetry is reduced, potentially resulting in a nuclear yield increase. Inflight radiographs of various level of shimmed capsules with plastic (CH) ablators showed that shims can indeed control the in-flight capsule shell P 4 asymmetry, with a linear sensitivity to shim amplitude that is close to analytic estimates and simulations. Furthermore, the stagnated DT fuel areal density P 4 asymmetry inferred from downscattered neutron imaging was reduced when the capsule shim was applied, in agreement with simulations matching the inflight shell asymmetry. A nuclear yield improvement via shim was not observed, as predicted, likely due to implosion instabilities and as built capsule shim deviations from an ideal P 4 shape.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2023

Thickness dependence of piezo-bimorph adaptive mirror bending

A new generation of adaptive x-ray optics (AXO) is being installed on high-coherent-flux x-ray beamlines worldwide to correct and control the optical wavefront with sub-nm precision. These ultra-smooth mirrors achieve high reflectivities at glancing angles of incidence and can be hundreds of mm long. One type of adaptive x-ray mirror relies on piezoelectric ceramic strips which are segmented into channels and actuated to induce local, longitudinal bending, generating one-dimensional shape changes in the mirror substrate. A recently described mirror model uses a three-layer geometry with parallel actuators on the front and back surfaces of a thicker mirror substrate. By analogy to a solved problem in the thermal actuation of a tri-metal strip, we show that the achievable bending radius varies approximately as the square of the substrate thickness. We provide an analytic solution and simulate bending using a finite-element model.

47 OTHER INSTRUMENTATION↗
DOE OSTI2024

Inverse-designed broadband low-loss grating coupler on thick lithium-niobate-on-insulator platform

A grating coupler on 700-nm-thick Z-cut lithium-niobate-on-insulator platform with high coupling efficiency, large bandwidth, and high fabrication tolerance is designed and optimized by inverse design method. The optimized grating coupler is fabricated with a single set of e-beam lithography and etching process, and it is experimentally characterized to possess peak coupling efficiency of −3.8 dB at 1574.93 nm, 1 dB bandwidth of 71.7 nm, and 3 dB bandwidth of over 120 nm, respectively.

Physics↗
DOE OSTI2024

Modulating spin-valley relaxation in WSe 2 with variable thickness VOPc layers

Combining the synthetic tunability of molecular compounds with the optical selection rules of transition metal dichalcogenides (TMDCs) that derive from spin-valley coupling could provide interesting opportunities for the readout of quantum information. However, little is known about the electronic and spin interactions at such interfaces and the influence on spin-valley relaxation. Here, in this work, vanadyl phthalocyanine (VOPc) molecular layers are thermally evaporated on WSe 2 to explore the effect of molecular layer thickness on excited-state spin-valley polarization. The thinnest molecular layer supports an interfacial state which destroys the spin-valley polarization almost instantaneously, whereas a thicker molecular layer results in longer-lived spin-valley polarization than the WSe 2 monolayer alone. The mechanism appears to involve a tightly bound species at the molecule/TMDC interface that strengthens exchange interactions and is largely avoided in thicker VOPc layers that isolate electrons from WSe 2 holes.

2D materials↗
DOE OSTI2025

A charged particle transport approximation for thick and thin plasmas

In this work, we will construct a simple method to be utilized in the interpretation of the properties of a thin plasma from a study of the transport of charged particles through it. We do so by first demonstrating how charged particle fluxes encode local plasma information in their spectra for sufficiently thick plasmas and then propose how to extend that analysis to the thin plasma limit where the extensive geometry cannot be neglected through arguments from scale separation. We provide a numerical treatment of the transport problem and demonstrate that it is in good agreement with the approximation we present. Finally, we utilize both the numerical solution and our novel approximation to study the impact of the extensive scale of the plasma on the yield and flux normalized high-energy neutron spectra resulting from the upscattering of charged fuel ions. Using this analysis, we show that (after controlling for fusion yield) for the same uniform densities and temperatures, larger plasmas have higher magnitude but softer reaction-in-flight (RIF) neutron spectra relative to smaller plasmas. This is because larger plasmas retain more knocked-on suprathermal ions within their bulk and can downscatter them to lower average energies, while smaller plasmas allow a larger fraction of high energy particles to “range out” of the system prior to substantial downscattering or inducing an RIF reaction.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2013

Analysis of light propagation for a crossing of thin silicon wires using vertical tunnelling coupling with a thick optical channel waveguide

Using silicon photonic wires in a silicon-on-insulator structure as an example, we examine the problem of crossings of thin, high-index-contrast channel waveguides. To ensure high optical wave transmission efficiency at as low a level of parasitic scattering as possible, we propose using a structure with vertical coupling between a thin tapered silicon waveguide and a thick polymer waveguide, separated by a thin buffer oxide layer. Numerical simulation is used to find conditions under which such a structure (3 × 90 μm in dimensions) ensures 98 % and 99 % transmission efficiency at ∼1.55 μm in 35- and 26-nm spectral ranges, respectively, for direct propagation and 99.99 % transmission in the transverse direction. The optical element in question is proposed for use in optical microchips with multiple channel waveguide crossings. (integrated optical waveguides)

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2014

Focusing of dipole radiation by a negative index chiral layer. 1. A thick layer as compared with the wavelength

We have derived and investigated the analytical expressions for the fields of scattered radiation of an electric dipole source by a chiral (bi-isotropic) layer with arbitrary permittivity and permeability and arbitrary thickness. It is shown that in the negativeindex chiral layer the focus spot of dipole radiation is split due to excitation of right- and left-hand circularly polarised waves. The conditions are found under which the waves with one of the polarisations can be suppressed, which leads to a substantial improvement of the focusing properties of the chiral layer. (metamaterials)

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Specific features of single-pulse femtosecond laser micron and submicron ablation of a thin silver film coated with a micron-thick photoresist layer

Specific features of ablation of a thin silver film with a 1-μm-thick layer of a highly transparent photoresist and the same film without a photoresist layer under single tightly focused femtosecond laser pulses in the visible range (515 nm) are experimentally investigated. Interference effects of internal modification of the photoresist layer, its spallation ablation from the film surface and formation of through hollow submicron channels in the resist without its spallation but with ablation of the silver film lying under the resist are found and discussed. (extreme light fields and their applications)

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗