Development of improved single crystal gallium phosphide solar cells final report, jun. 12, 1963 - aug. 12, 1964
Single crystal gallium phosphide solar cells
SOLAR CELL↗
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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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Low cost silicon-on-ceramic photovoltaic solar cells
A technique has been developed for coating low-cost mullite-based refractory substrates with thin layers of solar cell quality silicon. The technique involves first carbonizing one surface of the ceramic and then contacting it with molten silicon. The silicon wets the carbonized surface and, under the proper thermal conditions, solidifies as a large-grained sheet. Solar cells produced from this composite silicon-on-ceramic material have exhibited total area conversion efficiencies of ten percent.
Koepke, B. G.↗
Understanding the Mechanism of Light and Elevated Temperature Induced Degradation of p-type Silicon Solar Cells (Final Report)
Light- and elevated-temperature-induced degradation (LeTID) was first discovered in multicrystalline Si (mc-Si) solar cells and was initially attributed to metal impurities. Later, LeTID was reported in Czochralski (Cz) and float-zone (FZ) Si, and is considered as an important efficiency loss mechanism in p-type passivated emitter rear contact (p-PERC) Cz Si solar cells. LeTID causes ~10% relative and permeant efficiency losses in these cells in warmer climate regions where the module temperature is > 50 °C. Unlike light-induced degradation (LID), which is also observed in p-PERC cells, LeTID is slower and takes weeks to months in the field to saturate. Another difference compared to LID is that regeneration in LeTID proceeds very slowly, and field regeneration could take > 25 years — essentially the life of the module. Unlike B-O defects that are responsible for LID, neither B nor O impurities are directly involved in LeTID. LeTID appears to be unique to p-type Si, and is also observed in Ga-doped Si. Currently, most experimental evidence relates LeTID to the injection of hydrogen present in the dielectric surface passivation layers, such as SiN x and Al 2 O 3 , into the monocrystalline Si (c-Si) bulk during the fast-firing step. The involvement of hydrogen is further strengthened by controlled studies that show that increasing the amount of hydrogen in the dielectric during fast-firing increases the degree of LeTID. Similar to LID, a regeneration process has been discovered for LeTID. Regeneration of LeTID defects occurs when samples are exposed to 2–4 Suns illumination at elevated temperatures of 140–220 °C for 2–15 hr. Given the slower kinetics of LeTID and sample regeneration compared to LID, this poses a challenge for the manufacturing and field reliability of p-PERC cells, which will be the leading photovoltaic technologies over the next decade. Therefore, there is a need to understand LeTID and develop strategies to mitigate this effect. The defect responsible for LeTID has been extensively studied with over 100 publications, but direct spectroscopic evidence of this defect’s structure is lacking. Without an atomistic understanding of the LeTID defect, it is difficult to assess the long-term efficacy of the current industrial mitigation strategies. This, in turn, has implications on energy production for tens of gigawatts of these cells that will be deployed yearly worldwide. Using electron paramagnetic resonance, we identified a defect associated with LeTID with a g-value of 2.006, which we attribute to an Si dangling bond in an extended defect such as a vacancy agglomerate with H possibly within or in close vicinity. These vacancy agglomerates are likely created during the firing process, during which time H atoms are also injected into the bulk from the hydrogenated SiN x dielectric layer. Our atomistic-level insight shows that the LeTID defect can be mitigated by targeted intrinsic defect engineering of the c-Si material through a slower pull rate of the Cz ingot or 1000 °C oxygen ambient processing of the Si wafer to reduce the vacancy concentration. This project was a collaborative effort between the Colorado School of Mines and the National Renewable Energy Laboratory.
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Results of the 1981 NASA/JPL balloon flight solar cell calibration program
The calibration of the direct conversion of solar energy through use of solar cells at high altitudes by balloon flight is reported. Twenty seven modules were carried to an altitude of 35.4 kilometers. Silicon cells are stable for long periods of time and can be used as standards. It is demonstrated that the cell mounting cavity may be either black or white with equal validity in setting solar simulators. The calibrated cells can be used as reference standards in simulator testing of cells and arrays.
Seaman, C. H.↗
Solar cell comprising an oxide-nanoparticle buffer layer and method of fabrication
A buffer layer for protecting an organic layer during high-energy deposition of an electrically conductive layer is disclosed. Buffer layers in accordance with the present invention are particularly well suited for use in perovskite-based single-junction solar cells and double-junction solar cell structures that include at least one perovskite-based absorbing layer. In some embodiments, the buffer layer comprises a layer of oxide-based nanoparticles that is formed using solution-state processing, in which a solution comprising the nanoparticles and a volatile solvent is spin coated onto a structure that includes the organic layer. The solvent is subsequently removed in a low-temperature process that does not degrade the organic layer.
Bush, Kevin Alexander↗
Enabling New Approaches to Low-Cost Dopant Patterning for Interdigitated Back Contact Crystalline Silicon Solar Cells: Cooperative Research and Development, CRADA Number CRD-17-00665 (Final Report)
NREL is sub to the Department of Energy (DOE) Photovoltaic Research & Development (PVRD) project, titled "New Approaches to Low-Cost Scalable Doping for Interdigitated Back Contact Crystalline Silicon Solar Cells", awarded to Colorado School of Mines. The goal of this project was to develop an industrially relevant dopant patterning technique that enable high performing, cost efficient Interdigitated Back Contact (IBC) solar cells based on n-Cz silicon wafer. Several possibilities were explored at the beginning of the project and the masked plasma deposition was deselected as the most promising and industrially relevant. This method was thoroughly explored ion the course of the project, its limitations revealed and mitigated. NREL successfully the masked deposition integrated into the cell's process flow and produced the cells, alongside with numerous process development steps and application of in-house advanced characterization techniques. The report describes these developments by the task and in detail.
14 SOLAR ENERGY↗
Some considerations regarding the production of improved solar cells
Spectral response, cell size and thickness, and air mass efficiency of solar cells
AIR MASS↗
Single crystal and polycrystalline GaAs solar cells using AMOS technology
A description is given of current technology for fabricating single AMOS (antireflection-coated metal oxide semiconductor) solar cells, with attention given to thermal, plasma, and anodic oxidation, native oxide stripping, and X-ray photoelectron spectroscopy results. Some preliminary results are presented on the chemistry and electrical characterization of such cells, and the characteristics of cells fabricated on sliced polycrystalline GaAs wafers are examined. Consideration is also given to the recrystallization of evaporated Ge films for use as low-cost substrates for polycrystalline GaAs solar cells.
Stirn, R. J.↗
Diffused P+-N solar cells in bulk GaAs
Recently melt grown GaAs, made by liquid encapsulation techniques, has become available. This material is of sufficiently good quality to allow the fabrication of solar cells by direct diffusion. Results obtained with p(+)/n junction solar cells made by zinc diffusion are described. The quality of bulk GaAs for this application is evaluated.
Borrego, J. M.↗
ATS-5 solar cell experiment after 699 days in synchronous orbit.
The data from the ATS-5 solar cell experiment for the first 699 days in synchronous orbit is presented. Comparison of the performance of several different types of solar cell/coverslide configurations is made. This behavior is in turn compared with the calculated performance for such cell/coverslide configurations in synchronous orbit and with the results of accelerator irradiations designed to simulate the omnidirectional electron environment. It is generally found that the cells on the flight experiment perform like the cells irradiated with the accelerator, but they degraded more than predicted by the calculation. Solar cells mounted on a thin kapton panel are degrading about the same as are their counterparts mounted on a rigid panel.
Anspaugh, B. E.↗
A I-V analysis of irradiated Gallium Arsenide solar cells
A computer program was used to analyze the illuminated I-V characteristics of four sets of gallium arsenide (GaAs) solar cells irradiated with 1-MeV electrons and 10-MeV protons. It was concluded that junction regions (J sub r) dominate nearly all GaAs cells tested, except for irradiated Mitsubishi cells, which appear to have a different doping profile. Irradiation maintains or increases the dominance by J sub r. Proton irradiation increases J sub r more than does electron irradiation. The U.S. cells were optimized for beginning of life (BOL) and the Japanese for end of life (EOL). I-V analysis indicates ways of improving both the BOL and EOL performance of GaAs solar cells.
Heulenberg, A.↗
Recent advances in thin silicon solar cells
Recent progress in thin (2-4 mils, 50-100 microns) silicon solar cells which extends the capability of the cells into areas of use for possible space missions is reviewed. The production of thin flexible arrays using wrapped-around junction and wrapped-around contact cells is considered. Attention is also given to the formation of cells with very low solar absorptance (alpha-s less than 0.66) through changes in the AR coating, changes in front contact area, and maximizing cell efficiency.
Ho, F.↗
Thermal cycling and heat damage tests of thin-film cadmium sulfide solar cells
Heat damage and thermal cycling tests on thin film cadmium sulfide solar cells
DAMAGE↗
LDEF solar cell radiation effects analysis
Because of the extended time that the Long Duration Exposure Facility (LDEF) mission stayed in space, the solar cells on the satellite experienced greater environments than originally planned. The cells showed an overall degradation in performance that is due to the combined effects of the various space environments. The purpose of this analysis is to calculate the effect of the accumulated radiation on the solar cells, thereby helping Marshall Space Flight Center (MSFC) to unravel the relative power degradation from the different environments.
Rives, Carol J.↗
Analysis of the interaction of an electron beam with back surface field solar cells
In this paper the short circuit current Isc induced by the electron beam of a scanning electron microscope in a back surface field solar cell will be determined theoretically. It will be shown that, in a configuration used previously for solar cells with an ohmic back surface, the Isc gives a convenient means for estimating the back surface recombination velocities and thus the quality of back surface field cells. Numerical data will be presented applicable to a point source model for the electron-hole pair generation.
Von Roos, O.↗
Epitaxial solar cells on low-cost silicon substrates
This work is directed toward a low-cost approach to the fabrication of silicon solar cells and combines the advantages and flexibility of the epitaxial technique with the use of potentially low-cost silicon substrates. Epitaxial graded base n/p/p+ solar cell structures were grown and evaluated on various forms of polycrystalline and metallurgical grade silicon as well as single crystal substrates. X-ray topographic techniques have shown improvements in the crystallographic quality of the layer grown on polycrystalline material.
Robinson, P. H.↗
A two dimensional analysis of sheet resistance and contact resistance effects in solar cells
A computer model is developed to study the two-dimensional nature of the sheet resistance and contact resistance effects in solar cells. A major result is the demonstration that the distributed nature of the semiconductor sheet resistance causes the terminal dark I-V characteristics to exhibit an exp(qV/2kT) type dependence even when the one-dimensional characteristics of the cell exhibit an exp(qV/kT) type voltage dependence. The analytical model which is developed provides an easy method for estimating the sheet resistance of a solar cell from the terminal I-V data.
Fang, C. R.↗
Reducing Non-Radiative Recombination in Perovskite Solar Cells with a SiO2-Graphene Oxide Buried Interface Layer
Perovskite solar cells (PSCs) have emerged as a transformative photovoltaic technology. However, the device performance of inverted PSCs is dramatically limited by surface defects and the underlying film morphology of metal halide perovskite (MHP) thin film. Herein, we report a novel buried interface layer consisting of SiO2 nanoparticles (NPs) chemically bonded to graphene oxide (GO), deposited atop a hydrophobic hole extraction layer (HEL) to address this limitation. The SiO2 NPs serve as insoluble scaffolds that immobilize GO sheets on the hydrophobic HEL surface, enabling the formation of homogeneous MHP thin films. Meanwhile, the GO functional groups interact with surface-uncoordinated Pb2+, suppressing interfacial defects and guiding crystal grain growth of the resultant MHP thin films. This synergistic effect suppresses non-radiative charge recombination and enhances charge extraction efficiency. As a result, a 26.07% efficiency with significantly suppressed photocurrent hysteresis is observed from PSCs incorporating the SiO2-GO buried interface layer. Moreover, the above PSCs maintain 92% of their initial PCE after 1800 h of continuous operation at the maximum power point under AM 1.5 G (100 mW/cm2) illumination at 25 degrees C in air with 50-60% relative humidity. These results demonstrate that we have developed a facile and effective way to realize high-performance inverted PSCs.
14 SOLAR ENERGY↗