Engineering Papers⌕ Search

SEARCH · Engineering Papers

Results for “SUBSTRATE”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 1,639 records · Page 91
All sourcesNASA NTRSDOE OSTI
DOE OSTI2015

Longer than 1.9 μm photoluminescence emission from InAs quantum structure on GaAs (001) substrate

We report on photoluminescence (PL) emission with long wavelength for quantum structure by the sub-monolayer (SML) growth technique on GaAs (001) substrate. It is found that the PL emission wavelength can be controlled by controlling the SML InAs deposition amount. At 12 K, the PL peak position of the grown samples changes from about 1.66 to 1.78 μm. At 120 K, the PL emission of a sample reaches 1.91 μm. The physical mechanism responsible for the measured long wavelength PL emission may be related to strong In segregation and intermixing effects occurred in the structure grown by SML growth technique.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Stress-directed compositional patterning of SiGe substrates for lateral quantum barrier manipulation

While vertical stacking of quantum well and dot structures is well established in heteroepitaxial semiconductor materials, manipulation of quantum barriers in the lateral directions poses a significant engineering challenge. Here, we demonstrate lateral quantum barrier manipulation in a crystalline SiGe alloy using structured mechanical fields to drive compositional redistribution. To apply stress, we make use of a nano-indenter array that is pressed against a Si{sub 0.8}Ge{sub 0.2} wafer in a custom-made mechanical press. The entire assembly is then annealed at high temperatures, during which the larger Ge atoms are selectively driven away from areas of compressive stress. Compositional analysis of the SiGe substrates reveals that this approach leads to a transfer of the indenter array pattern to the near-surface elemental composition, resulting in near 100% Si regions underneath each indenter that are separated from each other by the surrounding Si{sub 0.8}Ge{sub 0.2} bulk. The “stress transfer” process is studied in detail using multiscale computer simulations that demonstrate its robustness across a wide range of applied stresses and annealing temperatures. While the “Si nanodot” structures formed here are not intrinsically useful as quantum structures, it is anticipated that the stress transfer process may be modified by judicious control of the SiGe film thickness and indenter array pattern to form more technologically useful structures.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Effect of the out-of-plane stress on the properties of epitaxial SrTiO{sub 3} films with nano-pillar array on Si-substrate

A nonlinear thermodynamic formalism has been proposed to calculate the physical properties of the epitaxial SrTiO{sub 3} films containing vertical nano-pillar array on Si-substrate. The out-of-plane stress induced by the mismatch between film and nano-pillars provides an effective way to tune the physical properties of ferroelectric SrTiO{sub 3} films. Tensile out-of-plane stress raises the phase transition temperature and increases the out-of-plane polarization, but decreases the out-of-plane dielectric constant below Curie temperature, pyroelectric coefficient, and piezoelectric coefficient. These results showed that by properly controlling the out-of-plane stress, the out-of-plane stress induced paraelectric-ferroelectric phase transformation will appear near room temperature. Excellent dielectric, pyroelectric, piezoelectric properties of these SrTiO{sub 3} films similar to PZT and other lead-based ferroelectrics can be expected.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Microstructural dependency of optical properties of m-plane InGaN multiple quantum wells grown on 2° misoriented bulk GaN substrates

A non-polar m-plane structure consisting of five InGaN/GaN quantum wells (QWs) was grown on ammonothermal bulk GaN by metal-organic vapor phase epitaxy. Surface step bunches propagating through the QW stack were found to accommodate the 2° substrate miscut towards the -c direction. Both large steps with heights of a few tens of nanometres and small steps between one and a few atomic layers in height are observed, the former of which exhibit cathodoluminescence at longer wavelengths than the adjacent m-plane terraces. This is attributed to the formation of semi-polar facets at the steps on which the QWs are shown to be thicker and have higher Indium contents than those in the adjacent m-plane regions. Discrete basal-plane stacking faults (BSFs) were occasionally initiated from the QWs on the main m-plane terraces, but groups of BSFs were frequently observed to initiate from those on the large steps, probably related to the increased strain associated with the locally higher indium content and thickness.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Influence of substrate temperature and post annealing of CuGaO{sub 2} thin films on optical and structural properties

A transparent p-type thin film CuGaO{sub 2} was deposited by using RF sputtering deposition method on plastic (PET) and glass substrate. The characteristics of the film is investigated. The thin film was deposited at temperature range from 50-250°C and the pressure inside the chamber is 1.0×10{sup −2} Torr and Argon gas was used as a working gas. The RF power is set to 100 W. The thickness of thin film is 300nm. In this experiment the transparency of the thin film is more than 70% for the visible light region. The band gap obtain is between 3.3 to 3.5 eV. The details of the results will be discussed in the conference.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Synthesis of Cu doped ZnS nanostructures on flexible substrate using low cost chemical method

Flexible electronics is one of the emerging area of this era. In this paper we have reported synthesis of Cu doped Zinc sulphide nanostructures on filter paper flexible substrates. Zinc chloride and Thio urea were used as a precursor for Zinc and Sulphur. The structures were characterized by XRD, FE-SEM and UV visible spectrometer. All the peaks identified for cubic structure of ZnS. Appearance of small Cu peaks indicates incorporation of Cu into ZnS lattice. Zns nanostructures assembled as nanobelts and nanofibers as shown in FE-SEM micrographs. Compound Structures provide the reasonable electrical conductivity on filter paper. Absorption in UV region makes them suitable for flexible electronic devices.

36 MATERIALS SCIENCE↗
DOE OSTI2015

LiNbO{sub 3}: A photovoltaic substrate for massive parallel manipulation and patterning of nano-objects

The application of evanescent photovoltaic (PV) fields, generated by visible illumination of Fe:LiNbO{sub 3} substrates, for parallel massive trapping and manipulation of micro- and nano-objects is critically reviewed. The technique has been often referred to as photovoltaic or photorefractive tweezers. The main advantage of the new method is that the involved electrophoretic and/or dielectrophoretic forces do not require any electrodes and large scale manipulation of nano-objects can be easily achieved using the patterning capabilities of light. The paper describes the experimental techniques for particle trapping and the main reported experimental results obtained with a variety of micro- and nano-particles (dielectric and conductive) and different illumination configurations (single beam, holographic geometry, and spatial light modulator projection). The report also pays attention to the physical basis of the method, namely, the coupling of the evanescent photorefractive fields to the dielectric response of the nano-particles. The role of a number of physical parameters such as the contrast and spatial periodicities of the illumination pattern or the particle deposition method is discussed. Moreover, the main properties of the obtained particle patterns in relation to potential applications are summarized, and first demonstrations reviewed. Finally, the PV method is discussed in comparison to other patterning strategies, such as those based on the pyroelectric response and the electric fields associated to domain poling of ferroelectric materials.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Investigation of single-layer/multilayer self-assembled InAs quantum dots on GaAs{sub 1-x}Sb{sub x}/GaAs composite substrates

The structure-performance properties of single-layered and multi-layered InAs/GaAs{sub 1−x}Sb{sub x} quantum dot (QD) system, grown by molecular beam epitaxy on GaAs (001) substrates, have been investigated as a function of Sb concentration. Electron microscopy observations showed no significant crystalline defects for the single-layered InAs QDs (Sb 20%). X-ray diffraction analysis revealed that the increase of Sb concentration from 7.3% to 10.2% for the multi-layered QDs increased the strain relaxation from 0% to ∼23% and the dislocation density of GaAsSb layers went up to 3.6 × 10{sup 9 }cm{sup −2}. The peak energy of QD luminescence was red-shifted with increasing Sb concentration due to reduced strain inside QDs. Moreover, the carrier lifetime of the QDs was highly improved from 1.7 to 36.7 ns due to weak hole confinement as the Sb concentration was increased from 7.3% to 10.2%. These structures should be highly promising as the basis for photovoltaic solar-cell applications. Finally, the increased Sb concentration increased the thermal activation energy of electrons confined in the QDs from 163.7 to 206.8 meV, which was indicative of the improved thermal stability with Sb concentration.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Room temperature analysis of dielectric function of ZnO-based thin film on fused quartz substrate

A set of sample consist of pure ZnO and Cu-doped ZnO film were grown on fused-quartz substrates using pulsed laser deposition (PLD) technique. Here, we report room temperature spectroscopic ellipsometry analysis (covering energy range of 0.5 to 6.3 eV) of pure ZnO film and Cu doped ZnO film at 8 in at. %. The thickness of pure ZnO and Cu-doped ZnO film using in this study is about 350 nm. To extract the dielectric function of ZnO thin film, multilayer modeling is performed which takes into account reflections at each interface through Fresnel coefficients. This method based on Drude-Lorentz models that connect with Kramers-Kronig relations. The best fitting of Ψ (amplitude ratio) and Δ (phase difference) taken by SE measurement are obtained reasonably well by mean the universal fitting of three different photon incident angles. The imaginary part of dielectric function (ε{sub 2}) show the broad peak at around 3.3 eV assigned as combination of optical band energy edge with excitonic states. The exitonic states could not be observed clearly in this stage. The evolution of extracted dielectric function is observable by introducing 8% Cu as indicated by decreasing of excitonic intensity. This result indicates the screening of excitonic state. This study will bring us to have a good undestanding for the role of Cu impurities for ZnO thin films.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Optical properties analysis of Ta-doped TiO{sub 2} thin films on LaAlO{sub 3} substrates

We study optical properties of Ta-doped TiO{sub 2} thin film on LaAlO{sub 3} substrate using spectroscopy ellipsometry (SE) analysis at energy range of 0.5 – 6.5 eV. Room temperature SE data for Ψ (amplitude ratio) and Δ (phase difference) between p- and s- polarized light waves are taken with multiple incident angles at several spots on the samples. Here, absorption coefficient has been extracted from SE measurements at photon incident angle of 70° for different Ta concentration (0.01, 0.4, and 5 at. %). Multilayer modelling is performed which takes into account reflections at each interface through Fresnel coefficients to obtain reasonably well the fitting of Ψ and Δ data simultaneously. As the results, we estimate that film thickness increases by increasing Ta concentration accompanied by the formation of a new electronic structure. By increasing Ta impurities, the blueshift of absorption coefficient (α) peaks is observable. This result indicates that TiO{sub 2} thin film becomes optically resistive by introducing Ta doping. Schematic model of interband transition inTiO{sub 2}:Ta will be proposed base on obtained optical properties. This study enables us to predict the role of Ta doping on the electronic and optical band structures of TiO{sub 2} thin film.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Optical response of columnar TiO{sub 2}:Co on Si substrate

Vertically arranged columnar TiO{sub 2}:Co structure has been deposited on Si (100) substrate using the metal organic chemical vapor deposition (MOCVD) technique. SEM images confirm the columnar structure of the TiO{sub 2}:Co layer on Si (100). Concentration of the Co dopant has been defined by means of the energy dispersive x-ray (EDX) spectra. Co concentrations are varied at 0.18, 0.33, and 0.68 at. % using pure TiO{sub 2} as the reference. X-ray diffraction (XRD) spectra show that the TiO{sub 2}:Co layer have a rutile phase. Further analysis of this structure has been performed by using room temperature spectroscopic ellipsometry (SE) measurements in the energy range of 0.5 - 6.5 eV. This optical response shows the unique feature of significantly high density fringe especially below the band gap energy region (lower than 3.3 eV) in contrast to the conventional TiO{sub 2} thin film structure. This unique feature is interpreted as a dominant contribution of the vertical interfaces at columnar boundaries towards reflected light from the sample. The evolution of Ψ and Δ will be discussed as the function of Co concentration and some optical properties will be extracted after reasonably well data fitting by multilayer modelling. Furthermore, by comparing the SE data from different measurement orientations, it has been shown that TiO{sub 2}:Co tends to be anisotropic. This study enables us to further evaluate structural properties through optical responses given by SE measurement.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Observation of reduced 1/f noise in graphene field effect transistors on boron nitride substrates

We have investigated the low frequency (f) flicker (also called 1/f) noise of single-layer graphene devices on h-BN (placed on SiO{sub 2}/Si) along with those on SiO{sub 2}/Si. We observe that the devices fabricated on h-BN have on average one order of magnitude lower noise amplitude compared with devices fabricated on SiO{sub 2}/Si despite having comparable mobilities at room temperature. We associate this noise reduction to the lower densities of impurities and trap sites in h-BN than in SiO{sub 2}. Furthermore, the gate voltage dependent noise amplitude shows a broad maximum at Dirac point for devices on h-BN, in contrast to the M-shaped behavior showing a minimum at Dirac point for devices on SiO{sub 2}, consistent with the reduced charge inhomogeneity (puddles) for graphene on h-BN. This study demonstrates that the use of h-BN as a substrate or dielectric can be a simple and efficient noise reduction technique valuable for electronic applications of graphene and other nanomaterials.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Generation of silicon nanocrystals by damage free continuous wave laser annealing of substrate-bound SiO{sub x} films

Silicon nanocrystals have been generated by laser induced phase separation in SiO{sub x} films. A continuous wave laser emitting at 405 nm is focused to a 6 μm diameter spot on 530 nm thick SiO{sub x} films deposited on fused silica substrates. Irradiation of lines is accomplished by focus scanning. The samples are investigated by atomic force microscopy, TEM, Raman spectroscopy, and photoluminescence measurements. At a laser power of 35 mW corresponding to an irradiance of about 1.2 × 10{sup 5 }W/cm{sup 2}, the formation of Si-nanocrystals in the film without any deterioration of the surface is observed. At higher laser power, the central irradiated region is oxidized to SiO{sub 2} and exhibits some porous character, while the surface remains optically smooth, and nanocrystals are observed beside and beneath this oxidized region. Amorphous Si-nanoclusters are formed at lower laser power and around the lines written at high power.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Thermoelectric transport coefficients in mono-layer MoS{sub 2} and WSe{sub 2}: Role of substrate, interface phonons, plasmon, and dynamic screening

The thermoelectric transport coefficients of electrons in two recently emerged transition metal di-chalcogenides (TMD), MoS{sub 2} and WSe{sub 2}, are calculated by solving Boltzmann transport equation using Rode's iterative technique in the diffusive transport regime and the coupled current (electrical and heat) equations. Scattering from remote phonons along with the hybridization of TMD plasmon with remote phonon modes and dynamic screening under linear polarization response are investigated in TMDs sitting on a dielectric environment. The transport coefficients are obtained for a varying range of temperature and doping density for three different types of substrates—SiO{sub 2}, Al{sub 2}O{sub 3}, and HfO{sub 2}. The Seebeck co-efficient for MoS{sub 2} and WSe{sub 2} is found to be higher than 3D semiconductors even with diffusive transport. The electronic thermal conductivity is found to be low, however, the thermoelectric figure of merit is limited by the high phonon thermal conductivity. It is found that judicious selection of a dielectric environment based on temperature of operation and carrier density is crucial to optimize the thermoelectric performance of TMD materials.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Transport properties of AB stacked (Bernal) bilayer graphene on and without substrate within 2- and 4-band approximations

We present the results of the calculations of longitudinal and Hall conductivities of AB-stacked bilayer graphene as a function of frequency, finite chemical potential, temperature both with and without magnetic fields on a base of 2- and 4-band effective models. The limited cases of the conductivities for direct current are derived. The relations being important for optoelectronic among Hall conductivities and Faraday, Kerr angles in the AB-bilayers samples in the electric and magnetic fields when the radiation passes across bilayer sheets on different kinds a substrate are obtained.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Domain formation and polarization reversal under atomic force microscopy-tip voltages in ion-sliced LiNbO{sub 3} films on SiO{sub 2}/LiNbO{sub 3} substrates

We report on studies on writing of micro- and nanodomains and specified domain patterns by AFM-tip voltages U{sub DC} in thin (0.5 μm thick) ion-sliced LiNbO{sub 3} films embedded to SiO{sub 2}/LiNbO{sub 3} substrates. A peculiar feature is an overlapping of domains as the distance between them decreases. Piezoelectric hysteresis loops were measured in a wide range of U{sub DC} pulse durations. Domain dynamics and characteristics of hysteresis loops reveal marked distinctions from those observed so far in LiNbO{sub 3} films and bulk crystals.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Driven microswimmers on a 2D substrate: A stochastic towed sled model

We investigate, both numerically and analytically, the diffusion properties of a stochastic sled sliding on a substrate, subject to a constant towing force. The problem is motivated by the growing interest in controlling transport of artificial microswimmers in 2D geometries at low Reynolds numbers. We simulated both symmetric and asymmetric towed sleds. Remarkable properties of their mobilities and diffusion constants include sidewise drifts and excess diffusion peaks. We interpret our numerical findings by making use of stochastic approximation techniques.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2015

Strain-effect transistors: Theoretical study on the effects of external strain on III-nitride high-electron-mobility transistors on flexible substrates

This paper presents strain-effect transistors (SETs) based on flexible III-nitride high-electron-mobility transistors (HEMTs) through theoretical calculations. We show that the electronic band structures of InAlGaN/GaN thin-film heterostructures on flexible substrates can be modified by external bending with a high degree of freedom using polarization properties of the polar semiconductor materials. Transfer characteristics of the HEMT devices, including threshold voltage and transconductance, are controlled by varied external strain. Equilibrium 2-dimensional electron gas (2DEG) is enhanced with applied tensile strain by bending the flexible structure with the concave-side down (bend-down condition). 2DEG density is reduced and eventually depleted with increasing compressive strain in bend-up conditions. The operation mode of different HEMT structures changes from depletion- to enchantment-mode or vice versa depending on the type and magnitude of external strain. The results suggest that the operation modes and transfer characteristics of HEMTs can be engineered with an optimum external bending strain applied in the device structure, which is expected to be beneficial for both radio frequency and switching applications. In addition, we show that drain currents of transistors based on flexible InAlGaN/GaN can be modulated only by external strain without applying electric field in the gate. The channel conductivity modulation that is obtained by only external strain proposes an extended functional device, gate-free SETs, which can be used in electro-mechanical applications.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗