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At least 1,639 records · Page 91

Unraveling the Stable Cathode Electrolyte Interface in all Solid‐State Thin‐Film Battery Operating at 5 V

Abstract Spinel‐type LiNi 0.5 Mn 1.5 O 4 (LNMO) is one of the most promising 5 V‐class cathode materials for Li‐ion batteries that can achieve high energy density and low production costs. However, in liquid electrolyte cells, the high voltage causes continuous cell degradation through the oxidative decomposition of carbonate‐based liquid electrolytes. In contrast, some solid‐state electrolytes have a wide electrochemical stability range and can withstand the required oxidative potential. In this work, a thin‐film battery consisting of an LNMO cathode with a solid lithium phosphorus oxynitride (LiPON) electrolyte is tested and their interface before and after cycling is characterized. With Li metal as the anode, this system can deliver stable performance for 600 cycles with an average Coulombic efficiency >99%. Neutron depth profiling indicates a slight overlithiated layer at the interface prior to cycling, a result that is consistent with the excess charge capacity measured during the first cycle. Cryogenic electron microscopy further reveals intimate contact between LNMO and LiPON without noticeable structure and chemical composition evolution after extended cycling, demonstrating the superior stability of LiPON against a high voltage cathode. Consequently, design guidelines are proposed for interface engineering that can accelerate the commercialization of a high voltage cell with solid or liquid electrolytes.

25 ENERGY STORAGE↗

Current‐Dependent Lithium Metal Growth Modes in “Anode‐Free” Solid‐State Batteries at the Cu|LLZO Interface

Abstract Controlling the lithium growth morphology in lithium reservoir‐free cells (RFCs), so‐called “anode‐free” solid‐state batteries, is of key interest to ensure stable battery operation. Despite several benefits of RFCs like improved energy density and easier fabrication, issues during the charging of the cell hinder the transition from lithium metal batteries with a lithium reservoir layer to RFCs. In RFCs, the lithium metal anode is plated during the first charging step at the interface between a metal current collector and the solid electrolyte, which is prone to highly heterogeneous growth instead of the desired homogeneous film‐like growth. Herein, the lithium morphology during the first charging step in RFCs is explored as a function of current density and current collector thickness. Using operando scanning electron microscopy, an increase in the lithium particle density is observed with increasing current density at the Cu|Li 6.25 Al 0.25 La 3 Zr 2 O 12 interface. This observation is then applied to improve the area coverage of lithium by pulsed plating. It is also shown that thin current collectors ( d = 100 nm) are unsuited for RFCs, as lithium whiskers penetrate them, resulting in highly heterogeneous interfaces. This suggests the use of thicker metal layers (several µm) to mitigate whisker penetration and facilitate homogeneous lithium plating.

25 ENERGY STORAGE↗

Spin‐Polarized Interfaces Redirect CO 2 Reduction From CO to Formate

Achieving high product selectivity in electrocatalytic carbon dioxide reduction (CO 2 RR) remains a critical challenge due to competition between multiple proton-coupled electron-transfer pathways on catalyst surfaces. Meanwhile, chirality-induced spin selectivity (CISS), which enables spin-polarized electron transport through chiral interfaces, has recently emerged as a promising strategy to modulate interfacial electrochemical reactions. Although the CISS effect has been shown to enhance selectivity and efficiency in the spin-sensitive oxygen evolution reaction (OER), its role in regulating CO 2 RR pathways and in stabilizing intermediates remains largely unexplored. Here, chiral molecules (R- and S-1,1′-bi-2-naphthyl-2,2′-diyl hydrogen phosphate, BNP) were integrated with SnO 2 to construct chiral-modified catalysts (R-BNP/SnO 2 and S-BNP/SnO 2 ). Compared with bare SnO 2 and racemic BNP-modified SnO 2 (Rac-BNP/SnO 2 ), the chiral catalysts exhibited a pronounced shift in product selectivity from CO toward formate production. Importantly, in-situ attenuated total reflectance surface-enhanced infrared absorption spectroscopy (ATR-SEIRAS) reveals that the chiral interface selectively stabilizes the O-bound *OCHO intermediate associated with the formate pathway and modulates interfacial water structure and hydrogen-bonding dynamics. These findings demonstrate that spin-polarized interfacial electron transfer can regulate CO 2 RR pathway selectivity by modulating the stabilization of key intermediates. More broadly, this work establishes chiral spin-selective interfaces as a new strategy for regulating competitive electrocatalytic reaction pathways.

14 SOLAR ENERGY↗

Solvent Extraction: Structure of the Liquid-Liquid Interface Containing a Diamide Ligand

Knowledge of the (supra)molecular structure of an interface that contains amphiphilic ligand molecules is necessary for a full understanding of ion transfer during solvent extraction. Even if molecular dynamics already yield some insight in the molecular configurations in solution, hardly any experimental data giving access to distributions of both extractant molecules and ions at the liquid–liquid interface exist. Here, the combined application of X-ray and neutron reflectivity measurements represents a key milestone in the deduction of the interfacial structure and potential with respect to two different lipophilic ligands. Indeed, we show for the first time that hard trivalent cations can be repelled or attracted by the extractant-enriched interface according to the nature of the ligand.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Enhanced Carbon‐Carbon Coupling at Interfaces with Abrupt Coordination Number Changes

Abstract Cu‐catalyzed electrochemical CO 2 reduction reaction (CO 2 RR) produces multi‐carbon (C 2+ ) chemicals with considerable selectivities and activities, yet required high overpotentials impede its practical application. Here, we design interfaces with abrupt coordination number (CN) changes that greatly reduce the applied potential for achieving high C 2+ Faradaic efficiency (FE). Encouraged by the mechanistic finding that the coupling between *CO and *CO(H) is the most probable C−C bond formation path, we use Cu 2 O‐ and Cu‐phthalocyanine‐derived Cu (OD−Cu and PD−Cu) to build the interface. Using operando X‐ray absorption spectroscopy (XAS), we find that the Cu CN of OD−Cu is ~11, favoring CO* adsorption, while the PD−Cu has a COH*‐favorable CN of ~4. Operando Raman spectroscopy revealed that the interfaces with abrupt CN changes promote *OCCOH formation. As a result, the designed catalyst achieves a C 2+ FE of 85±2 % at 220 mA cm −2 in a zero‐gap CO 2 electrolyzer. An improvement of C 2+ FE by 3 times is confirmed at the low potential regime where the current density is 60–140 mA cm −2 , compared to bare OD−Cu. We report a 45‐h stable CO 2 RR operation at 220 mA cm −2 , producing a C 2+ product FE of ~80 %.

Chemistry↗

Quantitative guidance for efficient vertical flow measurements at the sediment–water interface using temperature–depth profiles

Upward discharge to surface water bodies can be quantified using analytical models based on temperature–depth (T-z) profiles. The use of sediment T-z profiles is attractive as discharge estimates can be obtained using point-in-time data that are collected inexpensively and rapidly. Previous studies have identified that T-z methods can only be applied at times of the year when there is significant difference between the streambed–water interface and deeper sediment temperatures (e.g., winter and summer). However, surface water temperatures also vary diurnally, and the influence of these variations on discharge estimates from T-z methods is poorly understood. For this study, synthetic T-z profiles were generated numerically using measured streambed interface temperature data to assess the influence of diurnal temperature variations on discharge estimation and provide insight into the suitable application of T-z methods. Results show that the time of day of data collection can have a substantial influence on vertical flux estimates using T-z methods. For low groundwater discharge fluxes (e.g., 0.1 m d -1 ), daily transience in streambed temperatures led to relatively large errors in estimated flow magnitude and direction. For higher discharge fluxes (1.5 m d -1 ), the influence of transient streambed temperatures on discharge estimates was strongly reduced. Discharge estimates from point-in-time T-z profiles were most accurate when the uppermost point in the T-z profile was near the bed interface daily mean (two time periods daily). Where temperature time series data are available, daily averaged T-z profiles can produce accurate discharge estimates across a wide range of discharge rates. Seasonality in shallow groundwater temperature generally had a negligible influence on vertical flow estimates. Finally, these findings can be used to plan field campaigns and provide guidance on the optimal application of T-z methods to quantify vertical groundwater discharge to surface water bodies.

54 ENVIRONMENTAL SCIENCES↗

Modeling curved interfaces without element‐partitioning in the extended finite element method

Summary In this paper, we model holes and material interfaces (weak discontinuities) in two‐dimensional linear elastic continua using the extended finite element method on higher‐order (spectral) finite element meshes. Arbitrary parametric curves such as rational Bézier curves and cubic Hermite curves are adopted in conjunction with the level set method to represent curved interfaces. Efficient computation of weak form integrals with polynomial integrands is realized via the homogeneous numerical integration scheme—a method that uses Euler's homogeneous function theorem and Stokes' theorem to reduce integration to the boundary of the domain. Numerical integration on cut elements requires the evaluation of a one‐dimensional integral over a parametric curve, and hence, the need to partition curved elements is eliminated. To improve stiffness matrix conditioning, ghost penalty stabilization and the Jacobi preconditioner are used. For material interface problems, we develop an enrichment function that captures weak discontinuities on spectral meshes. Taken together, we show through numerical experiments that these advances deliver optimal algebraic rates of convergence with h ‐refinement ( p =1,2,…,5) and exponential rates of convergence with p ‐refinement ( p =1,2,…,7) for elastostatic problems with holes and material inclusions on Cartesian p th‐order spectral finite element meshes.

Chin, Eric B.↗

Interface flux recovery framework for constructing partitioned heterogeneous time-integration methods

A common approach for the development of partitioned schemes employing different time integrators on different subdomains is to lag the coupling terms in time. This can lead to accuracy issues, especially in multistage methods. Here, in this article, we present a novel framework for partitioned heterogeneous time-integration methods, which allows the coupling of arbitrary multistage and multistep methods without reducing their order of accuracy. At the core of our approach are accurate estimates of the interface flux obtained from the Schur complement of an auxiliary monolithic system. We use these estimates to construct a polynomial-in-time approximation of the interface flux over the current time coupling window. This approximation provides the interface boundary conditions necessary to decouple the subdomain problems at any point within the coupling window. In so doing our framework enables a flexible choice of time-integrators for the individual subproblems without compromising the time-accuracy at the coupled problem level. This feature is the main distinction between our framework and other approaches. To demonstrate the framework, we construct a family of partitioned heterogeneous time-integration methods, combining multistage and multistep methods, for a simplified tracer transport component of the coupled air-sea system in Earth system models. We report numerical tests evaluating accuracy and flux conservation for different pairs of time-integrators from the explicit Runge-Kutta and Adams-Moulton families.

97 MATHEMATICS AND COMPUTING↗

Revealing the beneficial role of K in grain interiors, grain boundaries, and at the buffer interface for highly efficient CuInSe 2 solar cells

K incorporation within grain boundaries, grain interiors, and interfaces has been studied within CuInSe 2 solar cells to better understand the beneficial or detrimental role of K distribution among these regions in chalcopyrite–based solar cells. Solar cells have been fabricated with intentional K introduction into specific regions of the device including the CuInSe 2 /CdS interface (CuInSe 2 /KInSe 2 /CdS) and the grain interiors (Cu 0.93 K 0.07 InSe 2 /CdS). A control CuInSe 2 /CdS device was also studied to separate effects of K originating from the soda–lime glass substrate from those of intentionally introduced K. The experiment was designed to understand K effects in Cu(In,Ga)Se 2 solar cells while mitigating complications from multiple elements in the 3 + site. The distribution of all elements within these samples has been directly observed with sub–nm resolution via atom probe tomography. In addition, electron beam–induced current measurements have been performed to correlate the atom probe tomography compositional profiles to the nanoscale carrier collection properties. The experiments show that a large decrease in the Cu/In ratio at the CdS interface can be achieved by forming KInSe 2 at the absorber surface, which drastically improves the device efficiency. The results presented here show a direct link between K concentration, Cu depletion, and In accumulation, such that the Cu/In ratio significantly reduces with K incorporation. In conclusion, the findings help clarify the mechanism behind K–induced efficiency enhancement.

14 SOLAR ENERGY↗

Mechanisms of adhesion degradation at the photovoltiac module's cell metallization-encapsulant interface

Adhesion measurements and chemical characterization of the encapsulant/silver metallization interface of a photovoltaic (PV) module through temperature, humidity, and voltage bias exposures were conducted. Results demonstrate two independent degradation mechanisms: (a) with voltage bias, the ionic conduction of Na + ions through the encapsulant results in the formation of sodium silicate at the silver metallization surface, thereby weakening that interface and (b) with moisture ingress, dissociation of the silane bonding to silver in the silver oxide similarly weakens this interface resulting in significantly lower debond energies.

14 SOLAR ENERGY↗

A Poisson–Nernst–Planck Model of Ion Transport and Interface Segregation in Metal–Insulator–Semiconductor Structures and Solar Cells

A numerical model that describes the transport of mobile ionic species in metal–insulator–semiconductor (MIS) and photovoltaic (PV) devices subject to temperature and voltage stress is presented. The finite element method (FEM) is used to solve the Nernst–Planck equation while imposing Poisson's equation self-consistently as a restriction for the electrostatic potential. This allows the contribution of the ionic species to the potential to be taken into account. Using a variational formulation eases the implementation of diverse boundary conditions, including the incorporation of segregation kinetics at the device interfaces. Segregation across the dielectric–semiconductor interface is relevant to modeling the electronic device degradation in systems where contamination reaches the semiconductor. The model in closed systems with no-flux boundary conditions is validated first. In the limiting case of low contamination levels with respect to the gate bias, the FEM solution matches analytically derived approximations. Then, the implementation is broadened to include an open boundary at the dielectric–semiconductor interface to account for leakage of ions. The predicted time dependence of the flatband voltage in Na-contaminated MIS test structures agrees well with measurements. This model successfully captures the role of long-range ion transport at concentrations of relevance to electronic and PV device instability and neuromorphic computing.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

An Evaluation of OpenSHMEM Interfaces for the Variable-Length Alltoallv() Collective Operation, In: OpenSHMEM and Related Technologies. Experiences, Implementations, and Technologies

Alltoallv() is a collective operation which allows all processes to exchange variable amounts of data with all other processes in the communication group. This means that Alltoallv() requires not only O(N2) communications, but typically also additional exchanges of the data lengths that will be transmitted in the eventual Alltoallv() call. This pre-exchange is used to calculate the proper offsets for the receiving buffers on the target processes. However, we propose two new candidate interfaces for Alltoallv() that would mitigate the need for the user to set up this extra exchange of information at the possible cost of memory efficiency. We explain the new interface variants and show how a single call can be used in place of the traditional Alltoall()/ Alltoallv() pair. We then discuss the performance tradeoffs for overall communication and memory costs, as well as both software and hardware-based optimizations and their applicability to the various proposed interfaces.

Computer Science↗

Universal relations for holographic interfaces

We study the entanglement entropy in 1+1 dimensional conformal field theories in the presence of interfaces from a holographic perspective. Compared with the well-known case of boundary conformal field theories, interfaces allow for several interesting new observables. Depending on how the interface is located within the entangling region, the entanglement entropies differ and exhibit surprising new patterns and universal relations. While our analysis is performed within the framework of holography, we expect our results to hold more generally.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗

Universality of effective central charge in interface CFTs

When an interface connects two CFTs, the entanglement entropy between the two CFTs is determined by a quantity called the effective central charge. The effective central charge does not have a simple form in terms of the central charges of the two CFTs, but intricately depends on the transmissive properties of the interface. In this article, we examine universal properties of the effective central charge. We first clarify how the effective central charge appears when considering general subsystems of the interface CFT. Then using this result and ideas used in the proof of the c-theorem, we provide a universal upper bound on the effective central charge. In past studies, the effective central charge was defined only in two dimensions. We propose an analogue of the effective central charge in general dimensions possessing similar universal properties as in two dimensions.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗

Strong Zeeman splitting in orbital-hybridized valleytronic interfaces

We report stacked heterointerfaces of two-dimensional (2D) materials are well-suited to obtain novel electronic functionality at small length scales, because the intrinsic properties of both materials can be blended by interlayer coupling with remarkable effects on the electronic band structure. In particular, band degeneracy at the K and K' Brillouin zone valleys of 2D materials can be broken by symmetry reductions by applying an external magnetic field, with possible application in valleytronic devices. Nevertheless, this usually requires impractically large external magnetic fields > 100 T. An alternative and more practical route is provided via stacking a non-centrosymmetric layered material on a magnetic substrate to induce valley splitting through the magnetic proximity effect; however, the splitting magnitude can vary sharply between similar interfaces. In this work, first-principle calculations are used to calculate the valley splitting of eight low-strain interfaces with transition metal dichalcogenides stacked on 2D magnetic substrates. It is shown that the interlayer band hybridization plays a major role when the two layers’ bands are closely aligned in energy, with the resulting band repulsion and the total valley splitting being strongly dependent on the Hubbard U correction , showing up to an order of magnitude change. The WSe 2 /CrGeTe 3 interface in particular shows strong interlayer interactions, which can potentially lead to a significantly high valley splitting of 26 meV; however further experimental investigations will be needed to resolve uncertainties in the predicted valley splitting.

36 MATERIALS SCIENCE↗

Stability Analysis of Interface Conditions for Ocean-Atmosphere Coupling

In this paper, we analyze the stability of different coupling strategies for multidomain PDEs that arise in general circulation models used in climate simulations. We focus on fully coupled ocean–atmosphere models that are needed to represent and understand the complicated interactions of these two systems, becoming increasingly important in climate change assessment in recent years. Numerical stability issues typically arise because of different time-stepping strategies applied to the coupled PDE system. In particular, the contributing factors include using large time steps, lack of accurate interface flux, and single-iteration coupling. We investigate the stability of the coupled ocean–atmosphere models for various interface conditions such as the Dirichlet–Neumann condition and the bulk interface condition, which is unique to climate modeling. By analyzing a simplified model, we demonstrate here how the parameterization of the bulk condition and other numerical and physical parameters affect the coupling stability and establish stability conditions for different coupling strategies.

97 MATHEMATICS AND COMPUTING↗

Effect of interface recombination on the efficiency of intracavity double diode structures

In the past ten years, there has been significant progress in solid-state optical refrigeration, causing a renewed interest in the possibility of electroluminescent cooling (ELC) in light emitting diodes (LEDs). More recently, our work on III-As based intracavity double diode structures (DDSs) indicates that the threshold for ELC can be reached, in practice, at high powers and 300 K if certain non-radiative recombination mechanisms and photodetector (PD) losses are minimized. The studied DDSs consist of a LED, incorporating a high-quality GaAs active layer, optically coupled to a GaAs p–n homojunction PD. Both the LED and PD are integrated in a single device, offering a unique environment for studying ELC. In this paper, we provide a brief overview of the DDS characteristics and investigate the impact of non-radiative interface recombination on the LED, showing how the choice of the barrier layer materials can suppress this effect. We use experimental characterization techniques to calibrate numerical simulations, coupling the drift-diffusion model for charge transport to a photon transport model. To explore the interface effects, we compare DDSs with either GaInP/GaAs or AlGaAs/GaAs double heterojunctions. The results suggest that GaInP barriers allow interface recombination suppression that is sufficient to reach internal cooling in the LED.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

The Interface Influence in TiN/SiN{sub x} Multilayer Nanocomposite Under Irradiation

The paper focuses on studying the kinetics of radiation-induced point defects formed in TiN/SiN{sub x} multilayer nanocomposites with account of their generation, diffusion recombination, and the influence of sinks functioning as interfaces. In order to describe the kinetics in nanocrystalline TiN and amorphous SiN{sub x} phases, a finite-difference method is used to solve the system of balance kinetic equations for absolute defect concentrations depending on the spatiotemporal variables. A model of the disclination-dislocation interface structure is used to study the absorption of radiation-induced point defects on the boundaries in created stress fields. It is shown that the interface effectively absorbs point defects in these phases of TiN/SiN{sub x} multilayer nanocomposite, thereby reducing their amount within the space between phases. This behavior of point defects partially explains a mechanism of the radiation resistance in this type of nanocomposites.

77 NANOSCIENCE AND NANOTECHNOLOGY↗