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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 1,639 records · Page 91
All sourcesNASA NTRSDOE OSTI
DOE OSTI2022

High Strain Response and Dielectric Properties of Bi 1/2 (Na 0.78 K 0.22 ) 1/2 TiO 3 Ceramics Doped with (Fe 1/2 Nb 1/2 ) 4+

Environmentally friendly piezoceramics Bi 1/2 (Na 0.78 K 0.22 ) 1/2 Ti 1-x (Fe 1/2 Nb 1/2 ) x O 3 (BNKT-FN) with FeNb (FN) ratios 0, 0.01, 0.02, 0.03 and 0.04 were synthesized via conventional solid-state reaction (CSSR). X-ray diffraction (XRD) analysis revealed that the FN complexes were completely dissolved in BNKT perovskite and the structural transition occurred from ferroelectric to relaxor state. The average grain sizes for x = 0, 0.01, 0.02, 0.03 and 0.04 were found to be 0.34 μm, 0.35 μm, 0.38 μm, 0.32 μm and 0.39 μm, respectively. It is observed that the grain size increased with the addition of FN, except for x = 0.03. Here, the coercive field (E c ) and remnant polarization (P r ) of the system were decreased with increasing FN concentration and the highest E c of 21.1 kV/cm and P r of 29.2 μC/cm 2 were noted for the base pure sample. In addition, the increase of FN content steadily broadened the dielectric anomaly at maximum dielectric constant temperature (T m ) in the BNKT-FN system. Consequently, unipolar normalized strain (S max /E max ) was found to be enhanced monotonically achieving the highest value of around 654 pm/V (x = 0.02). These properties suggest that the investigated system could be a promising eco-friendly candidate for piezoelectric actuators and many other applications requiring high piezoelectric induced strain.

25 ENERGY STORAGE↗
DOE OSTI2023

Promoting reversibility of layered potassium cathode through interstitial doping

With the increasing needs for large-scale and low-cost energy storage devices, Mn-based layered oxide cathodes have achieved considerable researching interests for potassium-ion batteries owing to their high energy density, abundant resource and low toxicity. However, their developments are challenged by the absence of suitable cathode materials to tolerate large-sized K-ion insertion/extraction and the presence of Jahn-Teller distortion of Mn 3+ . To address this issue, here we present a strategy of embedding boron into interstitial tetrahedral sites to obtain a P3-K 0.5 Mn 0.8 Co 0.2 B 0.1 O 2 cathode. Strong B-O covalent bonds facilitate the construction of robust orthorhombic framework and alleviate the undesired elongation of Mn-O bonds, contributing to excellent electrochemical performance. In addition, boron ions are verified to promote the formation of a homogeneous cathode electrolyte interphase layer, improving interfacial stability and realizing highly reversible cycling in a wide voltage range (1.4-4.3 V). This strategy provides a new pathway towards the development of high-performance cathode materials for potassium-ion batteries.

25 ENERGY STORAGE↗
DOE OSTI2025

Enhancing durability and activity toward oxygen evolution reaction using single-site Re-doped NiFeO x catalysts at ampere-level

NiFeO x materials are known as among the most active catalysts toward oxygen evolution reaction (OER) for hydrogen generation in alkaline media. Nevertheless, the long-term durability of NiFeO x catalysts for OER is still too far to the industrial application. Herein, we prepared a NiFeReO x catalyst with single-site Re dopants and observed that the single-site Re dopants could significantly enhance the durability without compromising the activity. A cell voltage of 1.82 V without iR correction is noted at the current density of 3000 mA cm –2 in anion-exchange membrane water electrolyzer (AEMWE) with NiFeReO x catalyst, and a very small degradation is observed under 2000 and 1000 mA cm –2 , which remarkably outperforms the pristine NiFeO x . Additionally, the overpotential of 305 mV at 10 mA cm –2 is achieved with the NiFeReO x catalyst, which is lower than 50 mV compared with the pristine NiFeO x catalyst, together with a smaller Tafel slope of 54.3 mV dec -1 . The boosted OER durability and activity of the NiFeReO x catalyst could be attributed to the strong electron-withdrawing property of Re 7+ single atoms leading to the electronic structure optimization and stabilization of Ni/Fe active sites. Our insights propose a new path for designing NiFeO x catalysts with high durability and activity toward OER.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2021

Zero-biased and visible-blind UV photodetectors based on nitrogen-doped ultrananocrystalline diamond nanowires

Taking advantage of the superflat surface of ultrananocrystalline diamond (UNCD), highly precise UNCD nanowire (NW) arrays were fabricated to develop high-performance UV photodetectors. The large surface-to-volume ratio of a nanowire significantly increases the number of surface trap states, and the reduced dimensionality effectively confines the active area of the charge carrier and shortens the transit time, which results in an enhanced photoconductivity and response speed. Here, in this paper, the zero-biased UV photodetectors based on nitrogen-incorporated ultrananocrystalline diamond nanowire arrays have been demonstrated and characterized. The estimated responsivity was 2.0 A/W for 350 nm incident light when the device operated at room temperature. The UVA and UVB photocurrent signals from this visible blind photodetector were well defined with a rise and decay time of less than 1 s.

36 MATERIALS SCIENCE↗
DOE OSTI2022

High and temperature-insensitive piezoelectric performance in the lead-free Sm-doped BiFeO 3 –BaTiO 3 ceramics with high Curie temperature

Large sensor piezoelectric constant (d 33 = 334 pC/N) and superior actuator piezoelectric constant (d 33 * = 552 pm/V) as well as a high Curie temperature (T C = 454 °C) were obtained simultaneously in the lead-free 0.67Bi 1.03 FeO 3 -0.33Ba 1-x Sm x TiO 3 ceramics. Such an excellent and temperature-insensitive piezoelectric performance with only 10% temperature variation of piezoelectric strain at the range of 25–125 °C is highly desirable for real applications. The structural origin of the enhanced piezoelectric performance is mainly attributed to the morphotropic phase boundary and the highest known tetragonality (c T /a T = 1.02) in such materials. Transmission electron microscopy and electro-mechanical phenomenological theory demonstrate that the superior d 33 and d 33 * are associated with the hybrids nanodomains (60–90 nm) and flattened thermodynamic energy profile owing to the local structure heterogeneity. Furthermore, these results are superior as the piezoelectric properties are temperature-independent and the material has large d 33 *, and high TC compared to other lead-free piezoelectric ceramics.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Photoluminescence of CdTe and CdZnTe compounds doped with 2% selenium

The addition of 2 % of selenium in CdTe and CdZnTe (CZT) exhibited an additional acceptor-bound exciton in photoluminescence (PL). From the PL and inductively coupled plasma mass spectrometer (ICP/MS) analyses, the additional acceptor-bound exciton emission is associated with a Cu impurity in the relatively low-purity (5N) precursor CdSe starting material. Additionally, thermal quenching of the acceptor/donor bound exciton emissions do not require a shift to any higher excited states or to the free exciton state. ICP/MS analysis also showed a higher concentration of Sn in CdZnTeSe (CZTS) compared to CdTe and CZT which is known to form a deep level trap at around E C – 0.83 eV. The trapping and de-trapping times indicate that the Sn-related deep trap acts as an electron trapping center. The relatively low electron mobility-lifetime product of CZTS might be correlated with the concentration of Sn in the impure CdSe material. Pulse height spectra using an Eu-152 gamma-ray source was taken for a 2-mm-thick planar CZTS detector. The spectra clearly showed all the expected gamma peaks with energy lower than 344.3 keV.

47 OTHER INSTRUMENTATION↗
DOE OSTI2021

Degradation mechanisms of 1.3 μm C-doped quantum dot lasers grown on native substrate

Here, the aim of this paper is to analyse the degradation modes of 1.3 μm InAs quantum dot laser diodes (QD LDs) grown by using carbon as a p-type dopant, as an alternative to beryllium. The devices were stressed at high current densities, to favor the onset of excited-state (ES) emission, and to study the related degradation phenomena. The study of QD LDs is of fundamental importance for the photonic integrated circuits (PICs). The investigation is based on two types of stress tests: 1) a current step stress and 2) a constant current stress. With these experiments we demonstrate that a) the current is a determining factor for the onset of the ES during the operation of such devices. b) the onset of ES is responsible for a rapid quenching of the ground state (GS) emission. c) stress induces a significant increase in the threshold current of the devices, that is ascribed to the lowering of the injection efficiency, which in turn can be explained by the easier escape of carriers from quantum dots (QDs) from ES energy levels. d) the contribution of defects on the optical and electrical degradation is also discussed.

42 ENGINEERING↗
DOE OSTI2022

Effects of Selenium Doping in Zinc Telluride from First Principles

We report point defects and compensation in zinc telluride have been subjects of study for several decades due to the compound’s scientific/technological applications. Despite this, there remains some disagreement in the literature as to the fine details of its defect chemistry. Recently, it has also come under renewed interest due to the emerging Cd( 1–x )Zn x Te( 1–y )Se y material family, used in nuclear radiation detector applications. In this article, we use state-of-the-art computational tools to re-examine the native defect chemistry of ZnTe and explore how it changes upon addition of selenium using density functional theory with screened hybrid exchange–correlation functionals, thermochemical models of the equilibration environment, and statistical mechanics models of the point defect ensemble.

II-VI semiconductors↗