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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 1,621 records · Page 90
All sourcesNASA NTRSDOE OSTI
DOE OSTI2020

Mixed-strategy approach to band-edge analysis and modeling in semiconductors

In semiconductor physics, the Urbach rule describes an exponential dependence of the UV-Vis absorption coefficient on photon energy at the band edge. The rule is so ubiquitously applied that a single common mechanism, variability in the local potential, is generally considered to be the cause of exponential band edges. Variability in the local potential may be caused by alloy inhomogeneity, structural defects, impurities, thermal excitation, or any other mechanism that interrupts ideal crystallinity and creates disorder. A crucial point of the Urbach rule is its development for band edges which approach linearity when plotted on a logarithmic scale. The rule was not developed in the context of nonlinear band edges with complex fine structure. Even so, this model has been applied extensively to band edges with such features. Using differential analysis and deconvolution, we develop an analytical technique capable of separating the components responsible for the fine structure observed. This approach reduces challenging signal-artifact convolution problems to a simple linear combination. Furthermore, we develop a model that can be applied to the nonlinear band-edge signals extracted. In this work, we show that in the limiting case of linearity, our model is consistent with and produces the same results as the linear Urbach model. Our model is capable of bypassing “tailing” as an indirect measure of the spread in the local potential and gives a direct measure of this quantity.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
NASA NTRS2023

Development Unit for In-Space Pneumatic Helium Transfer Compressor

High-pressure gaseous helium (GHe) plays a critical role in spacecraft propulsion due to its near exclusive use for pressurization of propellant tanks. Several different designs for helium compressor technologies have been developed for use on Earth; however, significant design changes are required to meet the power, thermal/heat dissipation, vacuum, vibration/shock, size, mass, and efficiency requirements needed for space and launch environments. Currently, no capability exists for mass efficient on-orbit GHe (or xenon) transfer, nor has it ever been attempted. This effort proposed several challenging requirements for the vendor to develop a one-of-a-kind pneumatic compressor prototype. In order to develop a compressor prototype at a TRL 4, a partnership with Air Squared, Inc. was established. This CIF project concluded with the receipt of a prototype along with a proposed design for a flight unit; however, it will not be built due to funding limitations. The vendor had moderate success with initial testing of the prototype at lower pressures (with shimming configured for low pressure). There were delays with testing since the unit was built for higher pressures and the low pressure shimming was challenging to implement. It was found that operation of the compressor at lower pressures caused increased friction on the motor shaft which resulted in the unit drawing more power (current). This was initially thought to be a motor or controller defect. Subsequent high pressure testing at KSC showed that the friction was reduced for the optimal design point (with a high pressure shimming configuration) and the motor (and controller) performed nominally. Following the vendor testing, the unit was tuned/shimmed for a nominal inlet pressure and shipped to KSC for high pressure testing using the custom-designed setup in the Vehicle Assembly Building. The unit performed well, showing the capability to achieve over higher pressure of compression. The pressure differential could likely increase, however, the maximum output of the power supply used for testing was reached, limiting the compressor motor’s capability. Following the GN2 testing, the test setup was converted to GHe with at high pressure. It was shown that although the unit was unable to achieve similar high pressure differentials due to reverse leakage of the GHe through the scroll tip seals, it did achieve the desired GHe compression. This may still be useful for some applications, however, for the purpose of on-orbit GHe transfer, the single stage design would need to be changed to include multiple stages to achieve the compression goals initially proposed by the project.

Brian Nufer↗
NASA NTRS2023

CST: A Tool for Optimizing the Efficiency and Effectiveness of Static-Code Analysis Tools

Static Code Analysis (SCA) is a vital component of NASA IV&V’s mission assurance for safety-critical software as it reduces the likelihood of software-induced hazards impacting mission success. Static Code Analysis achieves this by identifying hazards that may not have been otherwise detectable by typical code reviews or other testing. Using SCA tools, however, can be intimidating due to steep learning curves, especially considering tool performance and defect coverage varies greatly. Because of this variation amongst SCA tools, understanding which tools support certain defects and which do not, as well as understanding how to run an analysis based on steps that are unique to each tool, can be difficult to both new and experienced analysts alike. To mitigate this, the SCAWG or the IV&V Static Code Analysis Working Group, created the SCA Checker Taxonomy and Starting Point Profiles. The Checker Selection Tool (CST) incorporates these two SCAWG products into an interactive tool which allows the user to: select organized categories of defects they would like the SCA tools to discover, select default checkers depending on their mission type (e.g. flight), and configure multiple SCA tools at once. C/C++, Java, and Python defect checkers from four common SCA tools were utilized in this iteration of the CST. This iteration also includes the addition of training, SCA tool specific help, and taxonomy guide links, into its design to help users new to Static Code Analysis learn how to perform SCA more efficiently. The CST has been subject to beta testing by experienced static code analysts from the SCAWG to ensure a usable and accurate final product. The implications of the CST in the mission assurance of NASA safety-critical software are profound, as the CST can help identify and reduce false positives and false negatives, fundamentally improving overall SCA efficiency and accuracy.

static code analysis↗
DOE OSTI2025

Multimodal Defect Imaging of Pure Tungsten Components Fabricated via Electron Beam Powder Bed Fusion

The utilization of additive manufacturing (AM) techniques for refractory materials in high-temperature environments has significantly expanded because of the ability to fabricate geometrically complex components. Electron beam powder bed fusion (EB-PBF), which provides lower residual stress, a cleaner vacuum environment, and better efficiency for high melting point, is one of the best-suited AM methods to produce advanced refractory components. However, the property variation attributed to the heterogeneous microstructure and process-induced defects has hindered the widespread adoption of EB-PBF-produced material like tungsten. While numerous in-situ monitoring and defect detection methods have been demonstrated for EB-PBF, a workflow that compares and evaluates process-induced abnormalities from different imaging perspectives is still limited. This study examines a feature-embedded tungsten component manufactured via the EB-PBF process to demonstrate the defect detection capabilities of a multimodal defect imaging workflow. The predefined and process-induced defects are evaluated by harnessing various imaging techniques, including in-situ electron imaging, layerwise near-infrared (NIR) imaging, post-build high-energy x-ray computed tomography (CT), and conventional destructive metallography. The results highlight the strengths and limitations of distinctive defect imaging techniques concerning specific defect types, sizes, and conditions. It was found that electron imaging can provide more abnormal detection capabilities while maintaining a higher measuring accuracy, against the conventional metallography in this case study, compared with NIR and CT imaging techniques.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Effect of Sintering Temperature on Density and Mechanical Properties of Solid-State Sintered Silicon Carbide Ceramics and Evaluation of Failure Origin

Densified silicon carbide (SiC) is prepared through dry pressing of SiC powder followed by pressureless sintering in the presence of boron carbide and carbon as the additives. Sintering of SiC parts shows the increase in density with the increase in temperature (1950-2180 °C) by resulting in higher than 98% relative density (RD) at 2150 °C and above for 1 h. Sintered specimens are evaluated concerning the phase, microstructure and mechanical properties including hardness and flexural strength. The machined surface of SiC parts with about 98% RD is studied for the origin of failure. The estimated size of critical flaws (32-110 µm) based on flexural strength and fracture toughness indicates that machining defects are one of the primary reasons for failure in SiC ceramics. The order of magnitude of defects on machined surfaces of sintered SiC by SEM studies is found to be comparable with the estimated size of critical flaws. The failure behavior of SiC is discussed with the help of Weibull statistics with respect to the variation of four-point flexural strength.

36 MATERIALS SCIENCE↗
NASA NTRS2010

X-Ray Diffraction Wafer Mapping Method for Rhombohedral Super-Hetero-Epitaxy

A new X-ray diffraction (XRD) method is provided to acquire XY mapping of the distribution of single crystals, poly-crystals, and twin defects across an entire wafer of rhombohedral super-hetero-epitaxial semiconductor material. In one embodiment, the method is performed with a point or line X-ray source with an X-ray incidence angle approximating a normal angle close to 90 deg, and in which the beam mask is preferably replaced with a crossed slit. While the wafer moves in the X and Y direction, a narrowly defined X-ray source illuminates the sample and the diffracted X-ray beam is monitored by the detector at a predefined angle. Preferably, the untilted, asymmetric scans are of {440} peaks, for twin defect characterization.

Park, Yoonjoon↗
DOE OSTI2024

Nanoscale Control of Intrinsic Magnetic Topological Insulator MnBi 2 Te 4 Using Molecular Beam Epitaxy: Implications for Defect Control

Intrinsic magnetic topological insulators have emerged as a promising platform to study the interplay between the topological surface states and ferromagnetism. This unique interplay can give rise to a variety of exotic quantum phenomena, including the quantum anomalous Hall effect and axion insulating states. Here, in this study, utilizing molecular beam epitaxy (MBE), we present a comprehensive study of the growth of MnBi 2 Te 4 thin films on Si (111), epitaxial graphene, and highly ordered pyrolytic graphite substrates. By combining a suite of in situ characterization techniques, we obtain critical insights into the nanoscale control of MnBi 2 Te 4 epitaxial growth. First, we extract the free energy landscape for the epitaxial relationship as a function of the in-plane angular distribution. Then, by employing an optimized layer-by-layer growth, we determine the chemical potential and Dirac point of the thin film at different thicknesses and how this quantity is manifested by the dopant compensation from different antisite defects. Overall, these results establish a foundation for understanding the growth kinetics of MnBi 2 Te 4 and pave the way for future applications of MBE-grown thin films in emerging topological quantum materials.

36 MATERIALS SCIENCE↗
NASA NTRS1983

Diffusion barriers

The choice of the metallic film for the contact to a semiconductor device is discussed. One way to try to stabilize a contact is by interposing a thin film of a material that has low diffusivity for the atoms in question. This thin film application is known as a diffusion barrier. Three types of barriers can be distinguished. The stuffed barrier derives its low atomic diffusivity to impurities that concentrate along the extended defects of a polycrystalline layer. Sacrificial barriers exploit the fact that some (elemental) thin films react in a laterally uniform and reproducible fashion. Sacrificial barriers have the advantage that the point of their failure is predictable. Passive barriers are those most closely approximating an ideal barrier. The most-studied case is that of sputtered TiN films. Stuffed barriers may be viewed as passive barriers whose low diffusivity material extends along the defects of the polycrystalline host.

Nicolet, M. A.↗
DOE OSTI2014

Absence of bound states for waveguides in two-dimensional periodic structures

We study a Helmholtz-type spectral problem in a two-dimensional medium consisting of a fully periodic background structure and a perturbation in form of a line defect. The defect is aligned along one of the coordinate axes, periodic in that direction (with the same periodicity as the background), and bounded in the other direction. This setting models a so-called “soft-wall” waveguide problem. We show that there are no bound states, i.e., the spectrum of the operator under study contains no point spectrum.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2025

Defect Detection Model Development for Large Scale Thermoplastic Printing

Large-format additive manufacturing (LFAM) offers several advantages, including high throughput, cost-effective pellet-fed extrusion, and the capability to produce large-scale structures. The main pain points of LFAM include start and stops during the printing process, warpage, long layer times that lead to bead freezing, and bead separation due to shrinkage. These issues can lead to overfill, underfill and buildup of material in different sections of a print. This can lead to hidden defects embedded within the printed layers, or even ultimate failure of the printed structure. This ensures these defects can only be identified through nondestructive testing (NDT) inspection methods after printing, which can be timely and costly. Aligned Vision work specializes in 2D projectors with visual inspection systems and machine learning. Traditionally system is used for composite layup and layup inspections. In this work we used the LFAM system at Oak Ridge National Laboratory to create defect rich samples. The Aligned Vision inspection system then performed in-situ monitoring of the print process after each part was printed. This in-situ vision inspection system was used to develop a layer-by-layer inspection model that looks for overfill, underfill, and the buildup of defects using only a camera-based vision system. This leads to the assurance of high-quality production components.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Revelation of Inherently High Mobility Enables Mg 3 Sb 2 as a Sustainable Alternative to n-Bi 2 Te 3 Thermoelectrics

Over the past years, thermoelectric Mg 3 Sb 2 alloys particularly in n-type conduction, have attracted increasing attentions for thermoelectric applications, due to the multivalley conduction band, abundance of constituents, and less toxicity. However, the high vapor pressure, causticity of Mg, and the high melting point of Mg 3 Sb 2 tend to cause the inclusion in the materials of boundary phases and defects that affect the transport properties. In this work, a utilization of tantalum-sealing for melting enables n-type Mg 3 Sb 2 alloys to show a substantially higher mobility than ever reported, which can be attributed to the purification of phases and to the coarse grains. Importantly, the inherently high mobility successfully enables the thermoelectric figure of merit in optimal compositions to be highly competitive to that of commercially available n-type Bi 2 Te 3 alloys and to be higher than that of other known n-type thermoelectrics at 300-500 K. This work reveals Mg 3 Sb 2 alloys as a top candidate for near-room-temperature thermoelectric applications.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Atomic-column scanning transmission electron microscopy analysis of misfit dislocations in GaSb/GaAs quantum dots

The structural quality of GaSb/GaAs quantum dots (QDs) has been analyzed at atomic scale by aberration-corrected high-angle annular dark-field scanning transmission electron microscopy. In particular, we have studied the misfit dislocations that appear because of the high-lattice mismatch in the heterostructure. Our results have shown the formation of Lomer dislocations not only at the interface between the GaSb QDs and the GaAs substrate, but also at the interface with the GaAs capping layer, which is not a frequent observation. The analysis of these dislocations points to the existence of chains of dislocation loops around the QDs. The dislocation core of the observed defects has been characterized, showing that they are reconstructed Lomer dislocations, which have less distortion at the dislocation core in comparison to unreconstructed ones. As a result, strain measurements using geometric phase analysis show that these dislocations may not fully relax the strain due to the lattice mismatch in the GaSb QDs.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Human airway epithelial cells investigated by atomic force microscopy: A hint to cystic fibrosis epithelial pathology

The pathophysiology of cystic fibrosis (CF) airway disease stems from mutations in the CF Transmembrane Conductance Regulator (CFTR) gene, leading to a chronic respiratory disease. Actin cytoskeleton is disorganized in CF airway epithelial cells, likely contributing to the CF-associated basic defects, i.e. defective chloride secretion and sodium/fluid hypersorption. In this work, we aimed to find whether this alteration could be pointed out by means of Atomic Force Microscopy (AFM) investigation, as roughness and Young's elastic module. Moreover, we also sought to determine whether disorganization of actin cytoskeleton is linked to hypersoption of apical fluid. Not only CFBE41o- (CFBE) cells, immortalized airway epithelial cells homozygous for the F508del CFTR allele, showed a different morphology in comparison with 16HBE14o- (16HBE) epithelial cells, wild-type for CFTR, but also they displayed a lack of stress fibers, suggestive of a disorganized actin cytoskeleton. AFM measurements showed that CFBE cells presented a higher membrane roughness and decreased rigidity as compared with 16HBE cells. CFBE overexpressing wtCFTR became more elongated than the parental CFBE cell line and presented actin stress fibers. CFBE cells absorbed more fluid from the apical compartment. Study of fluid absorption with the F-actin-depolymerizing agent Latrunculin B demonstrated that actin cytoskeletal disorganization increased fluid absorption, an effect observed at higher magnitude in 16HBE than in CFBE cells. For the first time, we demonstrate that actin cytoskeleton disorganization is reflected by AFM parameters in CF airway epithelial cells. Our data also strongly suggest that the lack of stress fibers is involved in at least one of the early step in CF pathophysiology at the levels of the airways, i.e. fluid hypersorption. - Highlights: • CF bronchial epithelial (CFBE) cells show a disorganized actin cytoskeleton. • CFBE cells present high roughness and low rigidity in the plasmamembrane. • CFTR overexpression changes morphology and actin organization. • CFBE cells absorb more apical fluid than wild type bronchial epithelial cells. • Fluid absorption is increased by disorganization of actin cytoskeleton.

60 APPLIED LIFE SCIENCES↗
DOE OSTI2014

Microscopic, electrical and optical studies on InGaN/GaN quantum wells based LED devices

We report here on the micro structural, electronic and optical properties of a GaN-based InGaN/GaN MQW LED grown by the MOVPE method. The present study shows that the threading dislocations present in these LED structures are terminated as V pits at the surface and have an impact on the electrical and optical activity of these devices. It has been pointed that these dislocations were of edge, screw and mixed types. EBIC maps suggest that the electrically active defects are screw and mixed dislocations and behave as nonradiative recombinant centres.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2022

Early Results from GLASS-JWST. II. NIRCam Extragalactic Imaging and Photometric Catalog

We present the reduced images and multiwavelength catalog of the first JWST NIRCam extragalactic observations from the GLASS Early Release Science Program, obtained as coordinated parallels of the NIRISS observations of the Abell 2744 cluster. Images in seven bands (F090W, F115W, F150W, F200W, F277W, F356W, and F444W) have been reduced using an augmented version of the official JWST pipeline; we discuss the procedures adopted to remove or mitigate defects in the raw images. We obtain a multiband catalog by means of forced aperture photometry on point-spread function (PSF)-matched images at the position of F444W-detected sources. The catalog is intended to enable early scientific investigations, and it is optimized for faint galaxies; it contains 6368 sources, with limiting magnitude 29.7 at 5 σ in F444W. We release both images and catalog in order to allow the community to become familiar with the JWST NIRCam data and evaluate their merit and limitations given the current level of knowledge of the instrument.

79 ASTRONOMY AND ASTROPHYSICS↗
NASA NTRS2003

Switching Oxide Traps

We consider radiation-induced charge trapping in SiO2 dielectric layers, primarily from the point of view of CMOS devices. However, SiO2 insulators are used in many other ways, and the same defects occur in other contexts. The key studies, which determined the nature of the oxide charge traps, were done primarily on gate oxides in CMOS devices, because that was the main radiation problem in CMOS at one time. There are two major reviews of radiation-induced oxide charge trapping already in the literature, which discuss the subject in far greater detail than is possible here. The first of these was by McLean et al. in 1989, and the second, ten years later, was intended as an update, because of additional, new work that had been reported. Basically, the picture that has emerged is that ionizing radiation creates electron-hole pairs in the oxide, and the electrons have much higher mobility than the holes. Therefore, the electrons are swept out of the oxide very rapidly by any field that is present, leaving behind any holes that escape the initial recombination process. These holes then undergo a polaron hopping transport toward the Si/SiO2 interface (under positive bias). Near the interface, some fraction of them fall into deep, relatively stable, long-lived hole traps. The nature and annealing behavior of these hole traps is the main focus of this paper.

Oldham, Timothy R.↗
DOE OSTI2015

Defect-Enabled Electrical Current Leakage in Ultraviolet Light-Emitting Diodes

The AlGaN materials system offers a tunable, ultra-wide bandgap that is exceptionally useful for high-power electronics and deep ultraviolet optoelectronics. Moseley et al. (pp. 723–726) investigate a structural defect known as an open-core threading dislocation or ''nanopipe'' that is particularly detrimental to devices that employ these materials. Furthermore, an AlGaN thin film was synthesized using metal-organic chemical-vapor deposition. Electrical current leakage is detected at a discrete point using a conductive atomic-force microscope (CAFM). However, no physical feature or abnormality at this location was visible by an optical microscope. The AlGaN thin film was then etched in hot phosphoric acid, and the same location that was previously analyzed was revisited with the CAFM. The point that previously exhibited electrical current leakage had been decorated with a 1.1 μm wide hexagonal pit, which identified the site of electrical current leakage as a nanopipe and allows these defects to be easily observed by optical microscopy. Moreover, with this nanopipe identification and quantification strategy, the authors were able to correlate decreasing ultraviolet light-emitting diode optical output power with increasing nanopipe density.

36 MATERIALS SCIENCE↗