Engineering Papers⌕ Search

SEARCH · Engineering Papers

Results for “material defects”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 1,621 records · Page 90

Migration Kinetics of Surface Ions in Oxygen-Deficient Perovskite During Topotactic Transitions

Oxygen diffusivity and surface exchange kinetics underpin the ionic, electronic, and catalytic functionalities of complex multivalent oxides. Towards understanding and controlling the kinetics of oxygen transport in emerging technologies, it is highly desirable to reveal the underlying lattice dynamics and ionic activities related to oxygen variation. In this study, the evolution of oxygen content is identified in real-time during the progress of a topotactic phase transition in La 0.7 Sr 0.3 MnO 3-δ epitaxial thin films, both at the surface and throughout the bulk. Using polarized neutron reflectometry, a quantitative depth profile of the oxygen content gradient is achieved, which, alongside atomic-resolution scanning transmission electron microscopy, uniquely reveals the formation of a novel structural phase near the surface. Surface-sensitive X-ray spectroscopies further confirm a significant change of the electronic structure accompanying the transition. The anisotropic features of this novel phase enable a distinct oxygen diffusion pathway in contrast to conventional observation of oxygen motion at moderate temperatures. The results provide insights furthering the design of solid oxygen ion conductors within the framework of topotactic phase transitions.

36 MATERIALS SCIENCE↗

Monocrystalline CdSeTe/MgCdTe Double‐Heterostructure Solar Cells

This article reports monocrystalline CdSeTe/MgCdTe double‐heterostructure (DH) solar cells with varying Se compositions in the absorber layers that are grown on InSb substrates by using molecular beam epitaxy. The Se composition in the samples studied is determined to be 4%–11% through high‐resolution X‐ray diffraction (XRD) and photoluminescence measurements. Increased Se incorporation induces higher defect density attributed to increased lattice mismatch, and mixed‐phase formation due to the small difference in formation energies between the wurtzite and zinc blende phases of CdSe, which causes stacking faults and grain boundaries. Devices are fabricated by directly depositing an n‐type indium tin oxide (ITO) layer on the CdSeTe/MgCdTe DHs followed by Ag metal contacts. Reduced bandgap is observed in solar cells with increased Se composition. The devices with an absorber containing 4% Se exhibit an average open‐circuit voltage ( V OC ) of 0.925 V, a short‐circuit current density ( J SC ) of 23.4 mA/cm 2 , a fill factor ( FF ) of 0.650 and an efficiency of 14.1% without anti‐reflection coating. Absorbers with higher Se compositions result in poor device performance, mainly attributed to high defect density in the materials.

Ju, Zheng [Center for Photonics Innovation Arizona↗

Effect of Tuning the Structure on the Optical and Magnetic Properties by Various Transition Metal Doping in ZnO/TM (TM = Fe, FeCo, Cr, and Mn) Thin Films

We have investigated in this work the physical, optical, electronic, and the magnetic behavior (Curie temperature, magnetic moment) of Zn.1-x.MxO (M = Fe 5%, Co 1%, Cr 5%, and Mn 5%), diluted magnetic semiconductors (DMSs). The samples were deposited on glass substrate by the spray pyrolysis technique, and the results of the x-ray diffraction (XRD) of the prepared substrates was used to prove the incorporation of the dopants into the ZnO lattice host; the ferromagnetic and the antiferromagnetic state competitions and their effects on the physical, magnetic, and optical properties, were investigated. The electronic structure and magnetic properties of transition metal (TM) defects, were investigated in detail, by using the Korringa–Kohn–Rostoker (KKR) method combined with the coherent potential approximation (CPA). As a result, doping by TM impurities induce the ferromagnetism with different competitions between the ferromagnetic and antiferromagnetic states, which affects the physical properties of the TM (Fe, Fe/Co, Cr, and Mn)-doped ZnO, with a Curie temperature closer to room-temperature ferromagnetic.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Role of Dysprosium Doping on Structural, Optical, Magnetic and Electrical Properties of ZnO Nanorods

Well-defined Dy-doped ZnO rods were synthesized by hydrothermal route. Various studies were carried out on the synthesized rods like x-ray diffraction to confirm their hexagonal wurtzite structure; TEM, HRTEM and selected area electron diffraction to establish their rodlike structure; energy-dispersive x-ray spectroscopy analysis confirming appropriate substitution of dopant; UV-Vis spectra, which showed decrease in band gap with dopant concentration and photoluminescence study furnishing information regarding the presence of various types of defects. Further, magnetic studies were done using VSM to confirm roomtemperature ferromagnetic behaviour of both for undoped and doped ZnO rods and, the electrical studies were performed using four probe method, which confirmed that the ‘variation in resistivity with dopant concentration’ was related to crystallinity of the samples. UV-Vis spectra showed effect of dopant concentration on band gap and photoluminescence study confirms induced ferromagnetic behaviour due to Dy doping.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

First-principles Study of Strain-Induced Magnetism in Defective Arsenene

By using first-principles calculations, we explore the influences of tensile strain on the magnetic properties of a defective arsenene monolayer with mono-vacancy and di-vacancy. Calculation results show that unstrained defective arsenene monolayers both are intrinsically nonmagnetic. However, appropriate tensile strains can induce a ferromagnetic coupling in mono-vacancy- (8%) and di-vacancy-doped systems (7%), respectively. In addition, we also discussed the physical mechanism of strain-induced magnetism emergence and predicted a possibility of magnetism appearance in the experiment. Our study may provide insight for the design of memory-switching spintronic devices with metal-free magnetism by using arsenene.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Ce-Doping and Reduction Annealing Effects on Magnetic Properties of Pr{sub 2-x}Ce{sub x}CuO{sub 4} Nanoparticles

Magnetic properties of reduced T’-Pr{sub 2-x}Ce{sub x}CuO{sub 4} (T’-PCCO) nanoparticles with x = 0, 0.10, and 0.15 have been investigated. The T’-PCCO samples were synthesized by the chemically dissolved method with HNO{sub 3} as dissolving agents and by the succeeding calcination at 1000 °C for 15 h in air. The reduced T’-PCCO samples were obtained by the reduction annealing at 700 °C for 10 h in Argon atmosphere and at 700 °C for 12 h in vacuum. Rietveld analyses of the X-ray diffraction (XRD) patterns for all the samples have revealed dependences of the c-axis length and the crystal size on the Ce doping and the reduction annealing. XRD analyses and transmission electron microscopy (TEM) images have confirmed T’-PCCO nanoparticles with the size of around 40–100 nm. Magnetic properties of all the T’-PCCO nanoparticles were studied by a superconducting quantum interference device (SQUID) showing a dominant paramagnetic feature with very weak ferromagnetism in the as-synthesized samples at room temperature. It has changed to a pure paramagnetic feature after the reduction annealing in argon atmosphere and an enhanced ferromagnetism through vacuum annealing. This is probably due to the change in the number of oxygen vacancies through the defect recovery and the removal of excess oxygen after both reduction annealing processes, respectively.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

Optical characterization of nanostructured Ge{sub 1 − x}Sn{sub x}Se{sub 2.5} (x = 0, 0.3, 0.5) films

The paper reports the optical properties of thin films of nanostructured Ge{sub 1 − x}Sn{sub x}Se{sub 2.5} (x = 0, 0.3, 0.5) glassy alloys. The glassy alloys of Ge{sub 1 − x}Sn{sub x}Se{sub 2.5} (x = 0, 0.3, 0.5) were prepared using melt quenching method. Thin films of nanostructured Ge{sub 1 − x}Sn{sub x}Se{sub 2.5} (x = 0, 0.3, 0.5) glassy alloys were prepared using physical vapor deposition method. The films were characterized using XRD, EDX and TEM, which confirmed the amorphous nature, composition and formation of nanorods in the samples. Absorption and transmission spectra of thin films were recorded in the spectral range 400–2500 nm to obtain energy band gap, refractive index, extinction coefficient, dielectric constant etc. Results show that refractive index increases while band gap decreases on increase of Sn content in the Ge–Se system. This is due to the increase in density of defect states within band gap. The values of Urbach energy support the obtained results.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

Wet-chemical synthesis of Li7P3S11 with tailored particle size for solid state electrolytes

The small-size solid-state electrodes (SSEs) with high Li+ conductivity play an important role in reducing the interfacial resistance between electrode materials and SSEs and defects between SSEs. As one of the most conductive sulfide based ionic conductors, scalable synthesis of Li7P3S11 with controllable particle sizes is highly desired but rarely reported. Here, we report a facile wet-chemical synthesis method to prepare Li7P3S11 SSEs with variable sizes for all-solid-state lithium batteries (ASSLBs). By fully dissolving 70Li2S-30P2S5 precursors in ethyl acetate solution, the particle size of Li7P3S11 can be manipulated into as small as ~110 nm and high Li+ conductivity of 1.05 mS cm-1 can be achieved. A systematical mechanistic study of solvent effects suggests that the controlled particle sizes are attributed to the excellent solvability and low binding energy of ethyl acetate solvent toward solutes. Moreover, this generic method can be extended to the facilely synthesis of Li3PS4 nanoparticles with an average size of ~200 nm and high Li+ conductivity of 0.1 mS cm-1.

Zhou, Jianbin↗

Multivariate Normal Tissue Complication Probability Modeling of Heart Valve Dysfunction in Hodgkin Lymphoma Survivors

Purpose: To establish a multivariate normal tissue complication probability (NTCP) model for radiation-induced asymptomatic heart valvular defects (RVD). Methods and Materials: Fifty-six patients treated with sequential chemoradiation therapy for Hodgkin lymphoma (HL) were retrospectively reviewed for RVD events. Clinical information along with whole heart, cardiac chambers, and lung dose distribution parameters was collected, and the correlations to RVD were analyzed by means of Spearman's rank correlation coefficient (Rs). For the selection of the model order and parameters for NTCP modeling, a multivariate logistic regression method using resampling techniques (bootstrapping) was applied. Model performance was evaluated using the area under the receiver operating characteristic curve (AUC). Results: When we analyzed the whole heart, a 3-variable NTCP model including the maximum dose, whole heart volume, and lung volume was shown to be the optimal predictive model for RVD (Rs = 0.573, P<.001, AUC = 0.83). When we analyzed the cardiac chambers individually, for the left atrium and for the left ventricle, an NTCP model based on 3 variables including the percentage volume exceeding 30 Gy (V30), cardiac chamber volume, and lung volume was selected as the most predictive model (Rs = 0.539, P<.001, AUC = 0.83; and Rs = 0.557, P<.001, AUC = 0.82, respectively). The NTCP values increase as heart maximum dose or cardiac chambers V30 increase. They also increase with larger volumes of the heart or cardiac chambers and decrease when lung volume is larger. Conclusions: We propose logistic NTCP models for RVD considering not only heart irradiation dose but also the combined effects of lung and heart volumes. Our study establishes the statistical evidence of the indirect effect of lung size on radio-induced heart toxicity.

62 RADIOLOGY AND NUCLEAR MEDICINE↗

Coercivity enhancement in hematite/permalloy heterostructures across the Morin transition

Interfacial effects between antiferromagnetic (AFM) and ferromagnetic (FM) materials have long been a center of magnetism studies. Aside from the exchange bias occurring at the AFM/FM interface, controlling the coercivity is another significant topic in magnetic recordings. The coercivity of FM materials is often determined through varying grain size, alloy composition, density of defects, etc., which is set during material growth and offers limited room for modification after growth. Hematite (α - Fe 2 O 3 ) is an AFM material that undergoes a temperature-controlled spin-flip transition, the so-called Morin transition. This transition gives an extra degree of freedom making hematite an intriguing component to study the exchange coupling when interfaced with an FM material. Here, in this work, changes in the magnetic properties of soft magnetic permalloy (Ni 81 Fe 19 , or Py) thin films grown on hematite were studied across the Morin transition. Surprisingly, these samples showed a remarkable change in coercivity during the Morin transition. We attribute this effect to the magnetic domain mixture of hematite during the Morin transition. Our findings present a novel method of controlling the coercivity of plain ferromagnetic thin films.

Antiferromagnet↗

Microstructural evolution of compositionally complex solid-solution alloys under in-situ dual-beam irradiation

Here, this work attempts to link the microstructural evolution of single-phase compositionally complex alloy (CCA) compositions under dual-beam irradiation to their Mn-content via the stacking-fault energy (SFE) and vacancy migration energies. Two alloys, Cr 18 Fe 27 Mn 27 Ni 28 and Cr 15 Fe 35 Mn 15 Ni 35 , along with less compositionally complex pure Ni and Fe 56 Ni 44 binary were irradiated at 500 and 600 °C under dual-beam 1 MeV Kr 2+ and 16 keV He + heavy-ions up to 7 displacements per atom (dpa) with a He/dpa ratio of 0.75 %/dpa using in situ transmission electron microscopy (TEM). Due to the bubble-stabilizing effect of implanted He, bubbles were observed in all irradiations, and populations of faulted interstitial loops were characterized in Cr 18 Fe 27 Mn 27 Ni 28 and Cr 15 Fe 35 Mn 15 Ni 35 . A reduction in swelling was observed in the two CCAs compared to pure Ni and Fe 56 Ni 44 . Although swelling increased from 500 to 600 °C in Fe 56 Ni 44 , Cr 15 Fe 35 Mn 15 Ni 35 and Cr 18 Fe 27 Mn 27 Ni 28 both swelled slightly more at 500 °C. This was attributed to the difference in vacancy mobility, stronger pinning effect of vacancies on He, and the sink strength of faulted dislocation loops. Faulted interstitial loops nucleated with a higher number density and dislocation line density in Cr 15 Fe 35 Mn 15 Ni 35 at both temperatures, and at 600 °C in both materials. The differences in faulted loop population and temperature effect on swelling are correlated to the Mn-content and the measured SFE (20.2 ± 6.7 mJ/m 2 for Cr 18 Fe 27 Mn 27 Ni 28 and 9.2 ± 3.4 mJ/m 2 for Cr 15 Fe 35 Mn 15 Ni 35 ).

36 MATERIALS SCIENCE↗

An integrated statistical-thermodynamic model for fission gas release and swelling in nuclear fuels

Here, we propose a new model for burst fission gas release induced by microcracking in ceramic nuclear fuels such as uranium dioxide. The model stipulates that the densities of defects in the fuel material, such as microcracks and fission gas bubbles on grain boundaries, evolve in accordance with the second law of thermodynamics. Central to the model is the notion of an effective temperature, conjugate to the configurational entropy of the fuel material, and directly linked to the burnup. The model predicts that microcracking, driven by the internal stress state of the fuel material, reduces the bubble storage capacity of grain boundaries, and accounts for burst fission gas release during rapid temperature transients that simulate power transients, reactor startup, and loss-of-coolant accident conditions.

11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗

Infrared absorptive properties of Al-doped ZnO divided powder

Al-doped ZnO powders were synthesised by a Pechini process in order to obtain visible non-absorbent and near-Infrared absorbent particles. Firstly, it has been shown that synthesis under argon combined with the lowest synthesis temperatures (700 deg. C) allows getting the optimal properties for pure ZnO compounds due to creation of n-type defects segregated on oxide grain surface (Zn/O ratio superior to 1). Nevertheless, the near-Infrared absorption properties of the pure ZnO compounds remain low. The Al{sup 3+} doping of ZnO compounds was then investigated. The Al solubility limit inside ZnO doped compounds decreases drastically with the grain size, i.e. with the synthesis temperature. Then, the Al cations distribution varies inside ZnO grains, Al{sup 3+} segregation at the grain surfaces taking place for high synthesis temperatures. The optimal optical properties (high near-Infrared absorption) are reached combining Al-doping and adequate synthesis conditions: annealing under argon at low temperatures. In these conditions, the highest extrinsic (via Al doping) and intrinsic n-types defects rates are indeed reached. - Graphical abstract: Al-doped ZnO powders synthesised from Pechini routes after annealing under argon at low temperatures exhibit high optical selectivity: large Infrared absorption/high visible transparency. Highlights: > ZnO synthesis route with low T/low pO{sub 2} promotes extrinsic defects. > Highly divided Al-doped ZnO oxides (hdAZO) exhibit high Al solubility limit. > hdAZO are IR absorbent because of their high intrinsic/extrinsic defects concentrations.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Theoretical study of the origin of the enhanced visible light photocatalytic activity of N-doped CsTaWO{sub 6}: Charge compensation effects modulated by N and other defects

First-principles calculations were used to investigate the origin of the enhanced visible light photocatalytic activity of N-doped CsTaWO{sub 6}. The studies of the interactions of N and other defects found three kinds of charge compensation forms might be better. When NH-codoping is in CsTaWO{sub 6}, the H atom acted as a charge donor to compensate the hole state caused by N-doping and induced the band gap narrowing of about 0.507 eV. For a higher N-doping concentration, a particular N-N cluster structure was formed. The electron transition energy from N-N {pi} Low-Asterisk states to conduction band minimum decreased by 1.627 eV. When oxygen vacancy existed in the lattice, two electrons were transferred to compensate for two adjacent N acceptors and the band gap narrowed about 0.874 eV. The thermodynamics calculations indicated the formations of N and other defects were mutually promoted. - Graphical abstract: First-principle calculations were used to investigate the origin of the enhanced visible light photocatalytic activity of CsTaWO{sub 6} induced by N and other defects. Three charge compensation effects were put forward. Highlights: Black-Right-Pointing-Pointer The origin of visible light photo-activity of N-CsTaWO{sub 6} was studied by DFT. Black-Right-Pointing-Pointer Three kinds of charge compensation forms were found in N-doping systems. Black-Right-Pointing-Pointer The formations of N and other defects were mutually promoted.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

The defect chemistry of nitrogen in oxides: A review of experimental and theoretical studies

Incorporation of nitrogen into oxides has in recent years received increased attention as a variable for tuning their functional properties. A vast number of reports have been devoted to improving the photocatalytic properties of TiO{sub 2}, p-type charge carrier concentration in ZnO and the ionic transport properties of ZrO{sub 2} by nitrogen doping. In comparison, the fundamentals of the nitrogen related defect chemistry for a wider range of oxides have been less focused upon. In the present contribution, we review experimental and computational investigations of the nitrogen related defect chemistry of insulating and semiconducting oxides. The interaction between nitrogen and protons is important and emphasized. Specifically, the stability of nitrogen defects such as N{sub O}{sup /}, NH{sub O}{sup Multiplication-Sign} and (NH{sub 2}){sub O}{sup Bullet} is evaluated under various conditions and their atomistic and electronic structure is presented. A final discussion is devoted to the role of nitrogen with respect to transport properties and photocatalytic activity of oxides. - Graphical abstract: Experimental and theoretical investigations of the nitrogen related defect chemistry of a range of wide band gap oxides is reviewed. The interaction between nitrogen dopants and protons is emphasized and described through the atomistic and electronic structure as well as defect chemical processes involving NH and NH{sub 2} defects. Consequently, the physical properties of oxides containing such species are discussed with respect to e.g., diffusion and photocatalytic properties. Highlights: Black-Right-Pointing-Pointer Experimental and theoretical investigations of the nitrogen and hydrogen related defect chemistry of wide band gap oxides is reviewed. Black-Right-Pointing-Pointer The interaction between nitrogen dopants and protons is important and emphasized. Black-Right-Pointing-Pointer Diffusion and photocatalytic properties of N-doped oxides are discussed.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Pressure-induced structural phase transition in AlN:Mg and AlN:Co nanowires

High-pressure behaviors of AlN:Mg and AlN:Co nanowires have been investigated by in situ angle dispersive synchrotron X-ray diffraction up to 41.5 GPa and 38.2 GPa, respectively. Their corresponding pressure-induced wurtzite-to-rocksalt phase transitions start at 17.7 GPa and 15.0 GPa and complete at 33.2 GPa and 31.0 GPa, respectively. The phase-transition routes are not affected by the doped ions, while the phase transition pressures are lower than that of pure AlN nanowires. The distinct high-pressure behaviors are ascribed to the doped ions, which reduce the formation energy of cation vacancies and induce Al vacancies defects together with substitution defects, resulting in lattice distortion and affecting structural stability and phase transition pressure. - Graphical abstract: The high-pressure behaviors of AlN:Mg and AlN:Co nanowires have been investigated by in situ angle dispersive synchrotron X-ray diffraction. - Highlights: • The high-pressure behaviors of AlN:Mg and AlN:Co nanowires have been investigated. • The pressure-induced wurtzite-to-rocksalt phase transitions have been observed. • The phase transition pressures are lower than that of pure AlN nanowires. • The distinct high-pressure behaviors are ascribed to the dopants. • The vacancy defects and substitution defects influence structural stability.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗