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At least 1,621 records · Page 90

Chemical order in Ge{sub x}As{sub y}Se{sub 1-x-y} glasses probed by high resolution X-ray photoelectron spectroscopy

We have measured high-resolution x-ray photoelectron spectra of Ge{sub x}As{sub y}Se{sub 1-x-y} glasses with a mean coordination number (MCN) from 2.2 to 2.78. The valence band spectra showed that a number of Se–Se–Se trimers can be found in Se-rich samples, whilst multiband features induced by phase separation can be observed in extremely Se-poor samples. When the Ge, As, and Se 3d spectra were decomposed into several doublets, which correspond, respectively, to different chemical environments, the perfect AsSe{sub 3/2} pyramidal and GeSe{sub 4/2} tetrahedral structures in Se-rich samples gradually evolved into defect structures, including As–As and Ge–Ge homopolar bonds, with increasing Ge and As concentrations. Two transition-like features were found at MCN = 2.5 and 2.64–2.72 that correspond first to the disappearance of Se-chains in the glass network and, subsequently, destruction of the perfect GeSe{sub 4/2} tetrahedral structures, respectively.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Oxidation of SnO to SnO{sub 2} thin films in boiling water at atmospheric pressure

We demonstrated that SnO is oxidized to SnO{sub 2} in boiling water. (001)-oriented SnO thin films were pulsed-laser deposited onto a glass substrate. The Sn valence number changed from (II) to (IV) by keeping SnO films in boiling water at atmospheric pressure for 5 h. Optical transparency of the obtained SnO{sub 2} films was greater than 95% in the visible light range. The SnO{sub 2} films possessed an amorphous structure, and exhibited dielectric properties. Atomic force microscopy and Fourier transform infrared spectroscopy revealed granular structures and the existence of –OH groups, which may account for the diffusion of oxidants within the film.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Coherent acoustic phonon generation in GaAs{sub 1−x}Bi{sub x}

We have used femtosecond laser pulses to generate coherent acoustic phonons in the dilute Bismide alloy, GaAs{sub 1−x}Bi{sub x}. The observed oscillation periods match well with the oscillation periods calculated using the propagating strain pulse model. We attribute the generation process predominantly to electronic stress due to the absorption of the laser pulse at the surface of the GaAs{sub 1−x}Bi{sub x} layer. Our initial estimates suggest that the incorporation of Bi in GaAs causes an enhancement of the hydrostatic deformation potential because of the resonant state in the valence band due to isolated Bi impurities.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Band alignment of HfO{sub 2}/Al{sub 0.25}Ga{sub 0.75}N determined by x-ray photoelectron spectroscopy: Effect of SiH{sub 4} surface treatment

The band-alignment of atomic layer deposited (ALD)-HfO{sub 2}/Al{sub 0.25}Ga{sub 0.75}N was studied by high resolution x-ray photoelectron spectroscopy measurements for both the non-passivated and SiH{sub 4} passivated AlGaN surfaces. The valence band offset and the conduction band offset for the ALD-HfO{sub 2}/Al{sub 0.25}Ga{sub 0.75}N interface were found to be 0.43 eV and 1.47 eV, respectively, for the non-passivated sample, and 0.59 eV and 1.31 eV, respectively, for the SiH{sub 4}-passivated sample. The difference in the band alignment is dominated by the band bending or band shift in the AlGaN substrate as a result of the different interlayers formed by the two surface preparations.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Excitonic effects of E11, E22, and E33 in armchair-edged graphene nanoribbons

We explore excitonic effects of E11, E22, and E33, which are excitons formed between the three highest valence subbands and the three lowest conduction ones, in armchair-edged graphene nanoribbons by applying the extended tight-binding model including electron-electron interactions. Our results show that the excitation energies and the binding energies decrease inversely with the ribbon widths and can be classified into three categories based on their width indices. We found the relation between the band structures and the binding energies and explained some recent observations of strong excitonic effects in graphene.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Polarized photoluminescence excitation spectroscopy of a-plane InGaN/GaN multiple quantum wells grown on r-plane sapphire

We have performed a detailed study of the impact of basal plane stacking faults (BSFs) on the optical properties of both a-plane InGaN/GaN quantum wells (QWs) and GaN template samples grown on r-sapphire. In particular, we have used polarised photoluminescence excitation spectroscopy (P-PLE) to investigate the nature of the low temperature recombination as well as extracting information on the valence band (VB) polarisation anisotropy. Our low temperature P-PLE results revealed not only excitons associated with intersubband quantum well transitions and the GaN barrier material but also a transition associated with creation of excitons in BSFs. The strength of this BSF transition varied with detection energy across the quantum well emission suggesting that there is a significant contribution to the emission line width from changes in the local electronic environment of the QWs due to interactions with BSFs. Furthermore, we observed a corresponding progressive increase in the VB splitting of the QWs as the detection energy was varied across the quantum well emission spectrum.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Magnetocrystalline anisotropy of the Fe-sublattice in Y{sub 2}Fe{sub 14}B systems

To reveal the role of Fe sublattice in the coercivity of R{sub 2}Fe{sub 14}B, we investigated the origin of perpendicular magnetocrystalline anisotropy (MCA) of Y{sub 2}Fe{sub 14}B using first-principles density-functional calculations. We found that the perpendicular MCA of Y{sub 2}Fe{sub 14}B arises predominantly from Fe sites with higher symmetry (16k{sub 1,2} and 8j{sub 1,2}). On the other hand, the Fe(4c) sites show a significant contribution to the in-plane MCA. This can be attributed to the localized character of Fe(4c)-d orbitals in R{sub 2}Fe{sub 14}B. Furthermore, the MCA energy of Y{sub 2}Fe{sub 14}B increases as the number of valence electrons increases within the rigid band model, indicating that the partial substitution of Fe by Co can enhance the MCA energy of Y{sub 2}Fe{sub 14}B.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Tight-binding analysis of the electronic states in AlAs with N isoelectronic impurities

Incorporation of nitrogen (N) atoms into III–V semiconductors significantly changes their electronic structures. The aim of this study was to assess the electronic states in AlAs that contained N impurities. An sp{sup 3}s{sup *} tight-binding model along with valence-force-field strain calculations were used to obtain the energy levels in N-doped AlAs. The calculations showed that an isolated N atom formed a resonant state above the conduction band edge in AlAs. In contrast, NN{sub 1}[110] and NN{sub 4}[220] pairs formed bound states inside the band gap. The formation of two bound states was consistent with the photoluminescence spectrum of N δ-doped AlAs.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Doping effects on thermoelectric properties of the off-stoichiometric Heusler compounds Fe{sub 2−x}V{sub 1+x}Al

The thermoelectric properties of Heusler-type Fe{sub 2−x}V{sub 1+x}Al{sub 1−y}Si{sub y} and Fe{sub 2−x}V{sub 1+x−y}Ti{sub y}Al alloys have been investigated to clarify which off-stoichiometric alloy, i.e., V-rich (x > 0) or V-poor (x < 0), is more effective in enhancing the Seebeck coefficient when doped by Si and Ti, while retaining a low electrical resistivity. Large Seebeck coefficients of −182 μV/K and 110 μV/K at 300 K are obtained for n-type Fe{sub 1.95}V{sub 1.05}Al{sub 0.97}Si{sub 0.03} and p-type Fe{sub 2.04}V{sub 0.93}Ti{sub 0.03}Al, respectively. When the Seebeck coefficient is plotted as a function of valence electron concentration (VEC), the VEC dependence for the doped off-stoichiometric alloys falls on characteristic curves depending on the off-stoichiometric composition x. It is concluded that a larger Seebeck coefficient with a negative sign can be obtained for the V-rich alloys rather than the V-poor alloys, whilst good p-type materials are always derived from the V-poor alloys. Substantial enhancements in the Seebeck coefficient for the off-stoichiometric alloys could be achieved by a favorable modification in the electronic structure around the Fermi level through the antisite V or Fe defect formation.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Low temperature magneto-photoluminescence of GaAsBi /GaAs quantum well heterostructures

Strong optical anisotropy is observed in the emission from a GaAs{sub 1−x}Bi{sub x} (x ∼ 0.04) quantum well grown by low temperature molecular beam epitaxy on (001) GaAs by means of low temperature magneto-photoluminescence (MPL) taken at 2 K in Faraday geometry for magnetic fields, B, up to 10 T. A significant diamagnetic shift (∼2.5 meV) develops for magnetic fields above ∼8 T, which is accompanied by a narrowing of the emission bandwidth and a substantial increase in the difference between the integrated intensities of the σ{sup +} and σ{sup −} polarizations in the MPL spectra. This, along with a peculiar spectral dependence of the polarization degree which evolves with increasing magnetic field, is interpreted in terms of bound and free magneto excitons in the system where Bi-related levels become hybridized to different extents with the valence and conduction bands of the GaAs host material.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Homogeneous limit of Cd{sub 1−x}Mn{sub x}GeAs{sub 2} alloy: Electrical and magnetic properties

We present the studies of structural, electrical, and magnetic properties of bulk Cd{sub 1−x}Mn{sub x}GeAs{sub 2} crystals with low Mn content, x, varying from 0 to 0.037. The studied samples have excellent crystallographic quality indicated by the presence of diffraction patterns never before observed experimentally for this compound. The electrical transport in our samples is dominated by thermal activation of conducting holes from the impurity states to the valence band with activation energy of about 200 meV. The defect states acting as ionic scattering centers with concentration in the range from 6 to 15 × 10{sup 17} cm{sup −3} are observed. The effective Mn content in our samples, x{sup ¯}{sub θ}, determined from fit of the susceptibility data to the Curie-Weiss law, is very close to the average chemical content, x. It indicates that the Mn ions are distributed randomly, substituting the Cd sites in the host CdGeAs{sub 2} lattice. We observe a negative Curie-Weiss temperature, |θ|≤3.1 K, increasing as a function of x. This indicates the significance of the short-range interactions between the Mn ions.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Inter-band optoelectronic properties in quantum dot structure of low band gap III-V semiconductors

A generalized theory is developed to study inter-band optical absorption coefficient (IOAC) and material gain (MG) in quantum dot structures of narrow gap III-V compound semiconductor considering the wave-vector (k{sup →}) dependence of the optical transition matrix element. The band structures of these low band gap semiconducting materials with sufficiently separated split-off valance band are frequently described by the three energy band model of Kane. This has been adopted for analysis of the IOAC and MG taking InAs, InSb, Hg{sub 1−x}Cd{sub x}Te, and In{sub 1−x}Ga{sub x}As{sub y}P{sub 1−y} lattice matched to InP, as example of III–V compound semiconductors, having varied split-off energy band compared to their bulk band gap energy. It has been found that magnitude of the IOAC for quantum dots increases with increasing incident photon energy and the lines of absorption are more closely spaced in the three band model of Kane than those with parabolic energy band approximations reflecting the direct the influence of energy band parameters. The results show a significant deviation to the MG spectrum of narrow-gap materials having band nonparabolicity compared to the parabolic band model approximations. The results reflect the important role of valence band split-off energies in these narrow gap semiconductors.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Comparison of Sn-doped and nonstoichiometric vertical-Bridgman-grown crystals of the topological insulator Bi{sub 2}Te{sub 2}Se

A comparative study of the properties of topological insulator Bi{sub 2}Te{sub 2}Se (BTS) crystals grown by the vertical Bridgeman method is described. Two defect mechanisms that create acceptor impurities to compensate for the native n-type carriers are compared: Bi excess, and light Sn doping. Both methods yield low carrier concentrations and an n-p crossover over the length of the grown crystal boules, but lower carrier concentrations and higher resistivities are obtained for the Sn-doped crystals, which reach carrier concentrations as low as 8 × 10{sup 14} cm{sup −3}. Further, the temperature dependent resistivities for the Sn-doped crystals display strongly activated behavior at high temperatures, with a characteristic energy of half the bulk band gap. The (001) cleaved Sn-doped BTS crystals display high quality Shubnikov de Haas (SdH) quantum oscillations due to the topological surface state electrons. Angle resolved photoelectron spectroscopy (ARPES) characterization shows that the Fermi energy (E{sub F}) for the Sn-doped crystals falls cleanly in the surface states with no interference from the bulk bands, which the Dirac point for the surface states lies approximately 60 meV below the top of the bulk valence band maximum, and allows for a determination of the bulk and surface state carrier concentrations as a function of Energy near E{sub F}. Electronic structure calculations that compare Bi excess and Sn dopants in BTS demonstrate that Sn acts as a special impurity, with a localized impurity band that acts as a charge buffer occurring inside the bulk band gap. We propose that the special resonant level character of Sn in BTS gives rise to the exceptionally low carrier concentrations and activated resistivities observed.

36 MATERIALS SCIENCE↗

Coordination-resolved local bond contraction and electron binding-energy entrapment of Si atomic clusters and solid skins

Consistency between x-ray photoelectron spectroscopy measurements and density-function theory calculations confirms our bond order-length-strength notation-incorporated tight-binding theory predictions on the quantum entrapment of Si solid skin and atomic clusters. It has been revealed that bond-order deficiency shortens and strengthens the Si-Si bond, which results in the local densification and quantum entrapment of the core and valence electrons. Unifying Si clusters and Si(001) and (111) skins, this mechanism has led to quantification of the 2p binding energy of 96.089 eV for an isolated Si atom, and their bulk shifts of 2.461 eV. Findings evidence the significance of atomic undercoordination that is of great importance to device performance.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Study of difference in interfacial reaction at Fe{sub 3}O{sub 4}/ZnO and ZnO/Fe{sub 3}O{sub 4} heterostructure using synchrotron radiation

We have prepared Fe{sub 3}O{sub 4}/ZnO and ZnO/Fe{sub 3}O{sub 4} bilayer structure on p-Si substrate using pulsed laser deposition technique (PLD). X-ray diffraction study revealed (0001) oriented growth of ZnO and (111) oriented growth of Fe{sub 3}O{sub 4} in both the bilayer structure. We observed a change in the density of states near the Fermi level in valence band spectra in case of Fe{sub 3}O{sub 4}/ZnO bilayer when compared to that of ZnO/Fe{sub 3}O{sub 4}. Nonlinear current–voltage (I-V) characteristics were observed in both the samples confirmed that these bilayer structures can be used for spintronic application.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Anisotropic emission and photon-recycling in strain-balanced quantum well solar cells

Strain-balanced quantum well solar cells (SB-QWSCs) extend the photon absorption edge beyond that of bulk GaAs by incorporation of quantum wells in the i-region of a p–i–n device. Anisotropy arises from a splitting of the valence band due to compressive strain in the quantum wells, suppressing a transition which contributes to emission from the edge of the quantum wells. We have studied both the emission light polarized in the plane perpendicular (TM) to the quantum well which couples exclusively to the light hole transition and the emission polarized in the plane of the quantum wells (TE) which couples mainly to the heavy hole transition. It was found that the spontaneous emission rates TM and TE increase when the quantum wells are deeper. The addition of a distributed Bragg reflector can substantially increase the photocurrent while decreasing the radiative recombination current. We have examined the impact of the photon recycling effect on SB-QWSC performance. We have optimized SB-QWSC design to achieve single junction efficiencies above 30%.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

Effect of Cu doping on the resistive switching of NiO thin films

Bipolar resistive switching is observed in the GaIn/Cu:NiO film/ITO device with active layer deposited by sol-gel spin-coating. The first-principles calculations indicate that Cu dopants with valence of +1 are located at the substitutional Ni sites rather than the interstitial ones. Cu doping introduces more oxygen vacancies in the film and increases the carrier mobility, however, excessive Cu dopants may assemble at the grain boundary resulting in larger set voltage. Current–voltage measurements indicate that the trap charge limited and space charge limited conduction dominate the high resistance state, while the low resistance state follows the Ohmic mechanism. The switching is attributed to the formation/rupture of oxygen vacancy filaments.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Interaction of Sn atoms with defects introduced by ion implantation in Ge substrate

The interaction of Sn atoms with defects induced by Sn implantation of Ge substrates with antimony (Sb) as an n-type dopant and the impact of H{sub 2} annealing on these defects were investigated by comparison with defects induced by Ge self-implantation. In the Ge samples implanted with either Sn or Ge, and annealed at temperatures of less than 200 °C, divacancies, Sb-vacancy complexes with single or double acceptor-like states, and defects related to Sb and interstitial Ge atoms were present. On the other hand, after annealing at 500 °C in an N{sub 2} or H{sub 2} atmosphere, defects with different structures were observed in the Sn-implanted samples by deep level transition spectroscopy. The energy levels of the defects were 0.33 eV from the conduction band minimum and 0.55 eV from the valence band maximum. From the capacitance-voltage (C-V) characteristics, interaction between Sn atoms and defects after annealing at 500 °C was observed. The effect of H{sub 2} annealing at around 200 °C was observed in the C-V characteristics, which can be attributed to hydrogen passivation, and this effect was observed in both the Ge- and Sn-implanted samples. These results suggest the presence of defects that interact with Sn or hydrogen atoms. This indicates the possibility of defect control in Ge substrates by Sn or hydrogen incorporation. Such defect control could yield high-performance Ge-based devices.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗