The New Semiconductor Cs 4 Cu 3 Bi 9 S 17
In this work, new quaternary chalcogenide Cs 4 Cu 3 Bi 9 S 17 has been synthesized by solid state reaction in a vacuum-sealed silica tube. Cs 4 Cu 3 Bi 9 S 17 adopts monoclinic space group P 2 1 / m , with the following dimensions: a = 20.006(4) Å, b = 4.0556(8) Å, c = 22.279(5) Å, and β = 96.921°. The crystal structure of Cs 4 Cu 3 Bi 9 S 17 features a unique three-dimensional framework consisting of interconnected Bi 2 Te 3 - and CdI 2 -type fragments forming three different-sized tunnels running parallel to the b -axis. The tunnels are filled with different numbers (1, 2, or 4) of Cs atoms. Cs 4 Cu 3 Bi 9 S 17 is stable in air at room temperature, and differential thermal analysis showed that it decomposes at elevated temperatures. Cs 4 Cu 3 Bi 9 S 17 is a semiconductor with a direct optical band gap of 0.9 eV, which is in agreement with density functional theory calculations. Electrical conductivity and Seebeck coefficient measurements show n-type semiconductor behavior. The electrical conductivity is 10 –4 S/cm at 300 K and increases to 0.9 S/cm at 773 K. Cs 4 Cu 3 Bi 9 S 17 possesses a very low thermal conductivity of 0.71 W m –1 K –1 at room temperature that decreases linearly with an increase in temperature to 0.46 W m –1 K –1 at 773 K. The low thermal conductivity shows the promise of Cs 4 Cu 3 Bi 9 S 17 as a new thermoelectric material with appropriate doping.