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At least 1,621 records · Page 90

Device Classification for Industrial Control Systems Using Predicted Traffic Features

To achieve a secure interconnected Industrial Control System (ICS) architecture, security practitioners depend on accurate identification of network host behavior. However, accurate machine learning based host identification methods depends on the availability of significant quantities of network traffic data, which can be difficult to obtain due to system constraints such as network security, data confidentiality, and physical location. In this work, we propose a network traffic feature prediction method based on a generative model, which achieves high host identification accuracy. Furthermore, we develop a joint training algorithm to improve host identification performance compared to separate training of the generative model and the classifier responsible for host identification.

97 MATHEMATICS AND COMPUTING↗

Progress in Near-Equilibrium Ammonothermal (NEAT) Growth of GaN Substrates for GaN-on-GaN Semiconductor Devices

This paper reviews the near-equilibrium ammonothermal (NEAT) growth of bulk gallium nitride (GaN) crystals and reports the evaluation of 2″ GaN substrates and 100 mmbulk GaN crystal grown in our pilot production reactor. Recent progress in oxygen reduction enabled growing NEAT GaN substrates with lower residual oxygen, coloration, and optical absorption. The oxygen concentration was approximately 2 × 1018 cm−2, and the optical absorption coefficient was 1.3 cm−1 at 450 nm. Maps of full-width half maximum (FWHM) of X-ray diffraction rocking curveswere generated for grown crystals and finished wafers. The X-ray rocking curve maps confirmed high-quality and uniform microstructure across the entire surface of the bulk crystals and substrates. The average FWHM of the 50 best bulk crystals from the recent batch was 28 ± 4 arcsec for the 002 diffraction and 34 ± 5 arcsec for the 201 diffraction, with an average radius of curvature of 20 m. X-ray topography measured on both sides of the bulk crystals implied that the density of dislocations wasreduced by one order of magnitude during the NEAT growth. A typical NEAT GaN substrate shows dislocation density of about 2 × 105 cm−2.

36 MATERIALS SCIENCE↗

A Field Study of Nonintrusive Load Monitoring Devices and Implications for Load Disaggregation

Evaluations of nonintrusive load monitoring (NILM) algorithms and technologies have mostly occurred in constrained, artificial environments. However, few field evaluations of NILM products have taken place in actual buildings under normal operating conditions. This paper describes a field evaluation of a state-of-the-art NILM product, tested in eight homes. The match rate metric—a technique recommended by a technical advisory group—was used to measure the NILM’s success in identifying specific loads and the accuracy of the energy consumption estimates. A performance assessment protocol was also developed to address common issues with NILM mislabeling and ground-truth comparisons that have not been sufficiently addressed in past evaluations. The NILM product’s estimates were compared to the submetered consumption of eight major appliances. Overall, the product had good performance in disaggregating the energy consumption of the electric water heaters, which included both electric resistance and heat-pump water heaters, but only a fair accuracy with refrigerators, dryers, and air conditioners. The performance was poor for cooking equipment, furnace fans, clothes washers, and dishwashers. Moreover, the product was often unable to detect major loads in homes. Typically, two or more appliances were not detected in a home. At least two dryers, furnace fans, and air conditioners went undetected across the eight homes. On the other hand, the dishwasher was detected in all homes where available or monitored. The key findings were qualitatively compared to those of past field evaluations. Potential areas for improvement in NILM product performance were determined along with areas where complementary technologies may be able to aid in load-disaggregation applications.

47 OTHER INSTRUMENTATION↗

SIDIS Unpolarized Cross Sections from a 3 He Target with the Solenoidal Large Intensity Device at JLab

In this paper we present a detailed impact study of semi-inclusive deep inelastic scattering unpolarized cross sections' measurements using the proposed SoLID apparatus at Jefferson Lab. This type of data, collected at large Bjorken x bj , moderate values of Q 2 and small values of the transverse momentum of produced hadrons, P hT , allows to study transverse momentum dependent (TMD) parton distribution and fragmentation functions in a still poorly explored region. We present the projected results for charged light mesons based on simulated data. For the azimuthal-angle integrated cross sections we adopt the TMD framework up to the next-to-next-to-next-to-leading-logarithmic accuracy, while a simpler TMD parton model is employed for the study of azimuthal angular dependencies.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗