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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 163 records · Page 9
All sourcesNASA NTRSDOE OSTI
DOE OSTI2022

Anomalous transverse resistance in the topological superconductor β-Bi2Pd

Abstract A supercurrent flowing in a superconductor meets no resistance. Yet an electric field may still be established within the superconductor in the presence of dissipative processes, such as vortex motion. Here we report the observation of a transverse voltage drop in superconducting β- Bi 2 Pd thin films. Unlike the Hall effect in general or in other superconductors, the sign of the observed transverse voltage does not depend on the external magnetic field. Instead, it is dictated by the broken inversion symmetry on the film interfaces. This anomalous transverse voltage, or transverse resistance, is indicative of a chirality that likely resonates with the topological surface states reported in β- Bi 2 Pd.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2021

Inverted metamorphic GaInAs solar cell grown by dynamic hydride vapor phase epitaxy

We present an inverted metamorphic rear heterojunction ~1.0 eV GaInAs solar cell deposited by dynamic hydride vapor phase epitaxy (D-HVPE) with high growth rate. This device uses a Ga 1-x In x P compositionally graded buffer (CGB) to bridge the lattice constant gap between the GaAs substrate and the Ga0.71In0.29As emitter layer. High-resolution x-ray diffraction and transmission electron microscopy confirm that the Ga 0.71 In 0.29 As emitter is grown lattice-matched to the in-plane lattice constant of the CGB with minimal generation of defects at the GaInAs/GaInP interface. The device contains a threading dislocation density of 2.3 × 10 6 cm -2 , a level that enables high-performance minority carrier devices and is comparable to previously demonstrated GaInP CGBs grown by D-HVPE. The device exhibits an open-circuit voltage of 0.589 V under a one-sun AM1.5G illumination condition and a bandgap-voltage offset of 0.407 V, indicating metamorphic epitaxial performance nearly equal to state-of-the-art devices. We analyze the dark current of the device and determine that reducing recombination in the depletion region, which can be achieved by reducing the threading dislocation density and optimizing the device doping density, will improve the device performance. Furthermore, the CGB and device layers, comprising ~8 µm of thickness, are grown in under 10 min, highlighting the ability of D-HVPE to produce high-quality metamorphic devices of all types with the potential for dramatically higher throughput compared to present technology.

14 SOLAR ENERGY↗
DOE OSTI2021

Probing the electronic properties of the electrified silicon/water interface by combining simulations and experiments.

Silicon (Si) is broadly used in electrochemical and photoelectrochemical devices, where the capacitive and Faradaic reactions at the Si/water interfaces are critical for signal transduction or noise generation. However, probing the electrified Si/water interface at the microscopic level remains a challenging task. Here we focus on hydrogenated Si surfaces in contact with water, relevant to transient electronics and photoelectrochemical modulation of biological cells and tissues. We show that by carrying out first principles molecular dynamics simulations of the Si(100)/water interface in the presence of an electric field we can realistically correlate the computed flat-band potential and tunneling current images at the interface with experimentally measured capacitive and Faradaic currents. Specifically, we validate our simulations in the presence of bias by performing pulsed chronoamperometry measurements on Si wafers in solution. Consistent with prior experiments, our measurements and simulations indicate the presence of voltage-dependent capacitive currents at the interface. We also find that Faradaic currents are weakly dependent on the applied bias, which we relate to surface defects present in newly prepared samples.

Ye, Zifan↗
DOE OSTI2026

Emergent anisotropic three-phase order in critically doped superconducting diamond films

Two decades since its discovery, superconducting heavily boron-doped diamond (HBDD) still poses fundamental questions that need to be answered to unlock its full potential for quantum applications. We use electrical magnetotransport measurements of critically doped homoepitaxial single crystal HBDD films to reveal signatures of intrinsically granular superconductivity. By studying the dependence of electrical resistivity on temperature and magnetic field vector, we infer that this granularity arises from doping induced disorder. We observe an unexpected three-phase anisotropy in the magnetoresistance, accompanied by a spontaneous transverse voltage (Hall anomaly). Our findings indicate the emergence of an anisotropic order in an otherwise isotropic single crystal HBDD film, offering insights into the mechanism of superconductivity in this quantum material.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2025

2 kV Al 0.64 Ga 0.36 N-channel high electron mobility transistors with passivation and field plates

Abstract High voltage (∼2 kV) Al 0.64 Ga 0.36 N-channel high electron mobility transistors were fabricated with an on-resistance of ∼75 Ω. mm (∼21 mΩ. cm 2 ). Two field plates of variable dimensions were utilized to optimize the breakdown voltage. The breakdown voltage reached >3 kV (tool limit) before passivation however it reduced to ∼2 kV after Si 3 N 4 surface passivation and field plate deposition. The breakdown voltage and on-resistance demonstrated a strong linear correlation in a scattered plot of ∼50 measured transistors. The fabricated transistors were electrically characterized and benchmarked against the state-of-the-art high-voltage (> 1 kV) Al-rich (>40%) AlGaN-channel transistors in breakdown voltage and on-resistance, indicating significant progress.

Alam, Md Tahmidul (ORCID:000900086556839X)↗
NASA NTRS1968

Precision bolometer bridge

Prototype precision bolometer calibration bridge is manually balanced device for indicating dc bias and balance with either dc or ac power. An external galvanometer is used with the bridge for null indication, and the circuitry monitors voltage and current simultaneously without adapters in testing 100 and 200 ohm thin film bolometers.

White, D. R.↗
NASA NTRS1973

Energy distribution in parallel plate plasma accelerators

A parallel plate accelerator operated in the quasi-steady regime of argon mass flow discharges permits, on account of its geometry, the appraisal of the initial ratio of energy disposition into the kinetic and thermal modes of the plasma while retaining the essential features of coaxial high power self-field MPD accelerators. The energy disposition ratio, calculated as the ratio of kinetic energy to enthalpy in the exhaust flow, shows reasonable agreement with the ratio of the induced emf in the accelerator to resistive voltage drop. Both these ratios indicate that the discharge imparts more energy to the flow by resistive heating than by direct body force acceleration. This is turn suggests that other acceleration mechanisms must be responsible for the high performance of conventional MPD arcs.

Dicapua, M. S.↗
NASA NTRS1984

A historical overview of the electrical power systems in the US manned and some US unmanned spacecraft

A historical overview of electrical power systems used in the U.S. manned spacecraft and some of the U.S. unmanned spacecraft is presented in this investigation. A time frame of approximately 25 years, the period for 1959 to 1984, is covered in this report. Results indicate that the nominal bus voltage was 28 volts dc in most spacecraft and all other voltage levels were derived from this voltage through such techniques as voltage inversion or rectification, or a combination. Most spacecraft used solar arrays for the main source of power except for those spacecraft that had a relatively short flight duration, or deep spaceprobes that were designed for very long flight duration. Fuel cells were used on Gemini, Apollo, and Space Shuttle (short duration flights) while radioisotope thermoelectric generators were employed on the Pioneer, Jupiter/Saturn, Viking Lander, and Voyager spacecraft (long duration flights). The main dc bus voltage was unregulated on the manned spacecraft with voltage regulation provided at the user loads. A combination of regulated, semiregulated, and unregulated buses were used on the unmanned spacecraft depending on the type of load. For example, scientific instruments were usually connected to regulated buses while fans, relays, etc. were energized from an unregulated bus. Different forms of voltage regulation, such as shunt, buck/boot, and pulse-width modulated regulators, were used. This report includes a comprehensive bibliography on spacecraft electrical power systems for the space programs investigated.

Maisel, J. E.↗
NASA NTRS1987

Langmuir probe surveys of an arcjet exhaust

Electrostatic (Langmuir) probes of both spherical and cylindrical geometry have been used to obtain electron number density and temperature in the exhaust of a laboratory arcjet. The arcjet thruster operated on nitrogen and hydrogen mixtures to simulate fully decomposed hydrazine in a vacuum environment with background pressures less than 0.05 Pa. The exhaust appears to be only slightly ionized (less than 1 percent) with local plasma potentials near facility ground. The current-voltage characteristics of the probes indicate a Maxwellian temperature distribution. Plume data are presented as a function of arcjet operating conditions and also position in the exhaust.

Zana, Lynnette M.↗
NASA NTRS1986

Behavior of inversion layers in 3C silicon carbide

A study on the field-induced surface-charge region in 3C silicon carbide (SiC) using 1 MHz capacitance-voltage (C-V) measurements at room temperature is here reported. A double column mercury probe was used on oxidized SiC substrates to form metal-oxide-semiconductor (MOS) structures. These structures were characterized in terms of the substrate doping profile, effective fixed oxide charge, and interface trap density. A distinctive feature of the MOS C-V curves from accumulation to inversion is that after going into deep depletion the capacitance rises to its equilibrium inversion level during the voltage sweep. Capacitance transient measurements indicate that the minority-carrier generation occurs at the SiO2/SiC interface.

Avila, R. E.↗
NASA NTRS1987

Langmuir probe surveys of an arcjet exhaust

Electrostatic (Langmuir) probes of both spherical and cylindrical geometry have been used to obtain electron number density and temperature in the exhaust of a laboratory arcjet. The arcjet thruster operated on nitrogen and hydrogen mixtures to simulate fully decomposed hydrazine in a vacuum environment with background pressures less than 0.05 Pa. The exhaust appears to be only slightly ionized (less than 1 percent) with local plasma potentials near facility ground. The current-voltage characteristics of the probes indicate a Maxwellian temperature distribution. Plume data are presented as a function of arcjet operating conditions and also position in the exhaust.

Zana, Lynnette M.↗
NASA NTRS1988

An Experimental Investigation of an Arcjet Thruster Exhaust Using Langmuir Probes

Electrostatic (Langmuir) probes of both spherical and cylindrical geometry have been used to obtain electron number density and temperature in the exhaust of a laboratory arcjet. The arcjet thruster operated on nitrogen and hydrogen mixtures to simulate fully decomposed hydrazine in a vacuum environment with background pressures less than 5 x 10 to the -2 Pa. The exhaust appears to be only slightly ionized (less than 1 percent) with local plasma potentials near facility ground. The current-voltage characteristics of the probes indicate a Maxwellian temperature distribution. Plume data are presented as a function of arcjet operating condition and also position in the exhaust.

Carney, Lynnette M.↗
NASA NTRS1990

Discrete liquid/vapor detectors for use in liquid helium

Simple devices have been constructed and tested which can discriminate between liquid helium and its vapor. The devices are 0.25-mm doped silicon cubes suspended from 0.05-mm-diameter stainless steel and manganin wires. A small current is passed through the device heating it and lowering its resistance. The degree of self-heating is dependent on whether the device is immersed in liquid or is surrounded by vapor. The voltage across the device then indicates the presence of liquid or vapor. The devices are meant to operate in the milligravity environment of space. Tests simulating thick superfluid films which would be present in this case indicate less than 0.3 milliwatt per detector is sufficient to boil away these thick films. The detector response time under these conditions is less than 50 milliseconds.

Dipirro, M. J.↗
NASA NTRS2001

Thickness Measurement Device for Ice, or Ice Mixed with Water or Other Liquid

A Device and Method are provide for determining the thickness of a layer of solid ice, a mixture of ice and water, or a mixture of ice arid other liquid, accumulated on the outer surface of an object. First and second total impedance sensors are operated at first and second frequencies. Corresponding first and second AC total impedance measuring circuits are coupled to The first and second sensors to produce output voltages based on the total impedance changes sensed by the sensors. A processor is coupled to the first and second measuring circuits to generate an output value using the measured output voltages. The output value s indicative of the thickness of the ice or ice and water mixture, or ice and other liquid.

Weinstein, Leonard M.↗
NASA NTRS1991

Performance of a Dual Anode Nickel-Hydrogen Cell

Nickel-hydrogen batteries are presently being used for energy storage on satellites in low Earth orbit and in geosynchronous orbit, and have also been selected for use on the proposed Space Station Freedom. Development continues on the cell technology in order to improve the specific energy and lengthen the cycle life. An experimental study was conducted to compare the voltage performance of a nickel-hydrogen cell containing a dual anode with the standard cell design which uses a single hydrogen electrode. Since the principle voltage loss in a nickel-hydrogen cell is attributed to the mass transport and resistive polarization parameters of the nickel electrode, addition of a hydrogen electrode on the other side of the nickel electrode should reduce the electrochemical polarizations by a factor of two. A 3.5 in. diameter boilerplate cell with a single 30 mils thick nickel electrode was cycled under various current conditions to evaluate its performance with a single anode and then with a double anode. A layered separator consisting of one Zircar cloth separator and one radiation-grafted polyethylene separator were used between the electrodes. The electrolyte was 26% KOH, and the tests were done at room temperature. The discharge voltage characteristics were determined as a function of current and depth-of-discharge. At the 4C discharge rate and 50% DOD, the voltage of the dual anode cell was 100 mV higher than the single anode cell. At 75% DOD the dual anode cell voltage was about 130 mV higher than the standard cell design. Resistances of the two c ell designs obtained from the slope of the mid-discharge voltages plotted against various currents indicated that the dual anode cell resistance was one-half of the state-of-the-art cell.

Gahn, Randall F.↗
DOE OSTI2026

Coupling Redox Compensation and Interfacial Stabilization in Low-Ni O3-Type Sodium Layered Oxide Cathodes

Low-Ni O3-type sodium layered oxides are attractive cathodes for cost-robust sodium-ion batteries, yet high-voltage cycling is often limited by Fe-driven degradation, including cation migration/dissolution, irreversible slab gliding with large strain, particle cracking, and accelerated interfacial parasitic reactions. Here, in this study, we introduce a redox-interface codesign strategy using stoichiometric, charge-balanced Cu 2+ /Ti 4+ cosubstitution while preserving full Na stoichiometry, transitioning from NaNi 1/4 Fe 1/2 Mn 1/4 O 2 to NaNi 1/4 Fe 1/5 Mn 1/4 Cu 3/20 Ti 3/20 O 2 . With the cosubstitution, Cu and Ti suppress Fe migration and dissolution and facilitate sustained Fe oxidation at high voltage. Meanwhile, Cu is also shown to be redox-active, providing reversible cationic charge compensation that mitigates the capacity penalty typically associated with reducing Fe participation. Operando diffraction and spectroscopy collectively indicate a more reversible high-voltage structural evolution with suppressed Fe-related irreversibility. Particularly, spontaneous Ti enrichment at surface/grain-boundary regions stabilizes the cathode−electrolyte interface and promotes a more NaF-rich interphase signature. This work establishes a generalizable route to reconcile stability and capacity in low-Ni, Fe-containing O3 sodium layered oxide cathodes via compositionally encoded bulk-interfacial coupling.

25 ENERGY STORAGE↗
NASA NTRS1981

Trimming epitaxial GaAs Schottky-diode parameters via anodic oxidation

Present day receivers operating at millimeter and sub-millimeter wavelengths most often rely, for their first mixers, on Schottky-barrier diodes formed on epitaxial GaAs. Crucial parameters for these diodes are breakdown voltage, series resistance, junction capacitance and forward conduction mechanism. Some of these are improved, others impaired, by change of epitaxy thickness. This paper describes experience with optimizing GaAs Schottky-diode parameters by anodic oxidation thinning of GaAs epitaxial layers. Monitoring of breakdown voltage of epitaxial GaAs in anodic oxidation solution provides indication of when thinning should be stopped in subjection to the breakdown voltage specification of diodes to be made from the material. Mixer and frequency-multiplier performance superior to any previously reported have been achieved by this technique.

Siegel, C. M.↗