Engineering Papers⌕ Search

SEARCH · Engineering Papers

Results for “voltage”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 163 records · Page 9

A Novel Grid-forming Voltage Control Strategy for Supplying Unbalanced Microgrid Loads Using Inverter-based Resources

This paper presents a novel grid-forming voltage control strategy for a battery energy storage system to maintain balanced three-phase output voltages when serving unbalanced loads. A stationary reference frame (αβ) based control scheme is proposed to regulate positive-sequence and negative-sequence voltages. Compared with the conventional rotating reference frame (dq) based control scheme, the proposed scheme shows better dynamic performance. Then, we analyze the system zero-sequence network and propose adding a grounding transformer to the Y/Yg connected output transformer to further reduce the voltage unbalance at the point of common coupling. The simulation results demonstrate the effective performance of the proposed voltage control scheme. Based on the results, the power-voltage unbalance curve is derived for different output transformer configurations to establish the relationship between the power unbalance limit and the voltage unbalance limit for microgrid power scheduling.

Xu, Bei↗

Transient voltage-reversal in transformers with multiple secondary coils

By using a transformer with multiple secondary coils, a single unipolar power source can drive multiple loads that have different steady-state operating-voltage requirements. We show that, during initial turn-on, a transient voltage that is opposite in sign to the operating voltage can be induced in one or more of the secondary coils. This is because the surging currents in the coils during turn-on produce a strong inductive interaction between all the coils. In a particular secondary coil, the voltage induced by a neighboring secondary can be larger, and opposite in sign to, the voltage directly induced by the primary coil. The effect is transient because, when the secondary circuits reach their steady-state operating currents, they no longer couple inductively to each other. We also show that, during the turn-on period, the voltage induced in a secondary coil can be significantly larger than its steady-state voltage. These transient effects are controlled by the values of the "coil-coupling" parameters, which are functions of the transformer geometry and of the magnetic permeability and electrical resistivity of the materials used. The results are derived from the circuit equations, and verified using PSpice simulations.

24 POWER TRANSMISSION AND DISTRIBUTION↗

A Low Cost SIPM Evaluation and Control Prototyping System including accurate bias voltage generation, leakage current measurement, and temperature control using Peltier cooling

We describe an electronics system to operate SIPMs in the laboratory. The system is comprised of a single channel amplifier board (SIPM Amp) and a 4-channel control board to which up to 4 SIPM Amp boards can be connected. The control board supplies a common low voltage power for the amplifiers. All channels feature individually regulated bias and Peltier power voltages, along withPt10K RTD readout. A graphical user interface allows control of the bias voltages, amplifier voltage, Peltier voltages, and also provides for readback of leakage currents and other voltages. The GUI app has a feedback loop to measure the SIPM temperature (with the PT10K) and generate correction voltages to the Peltier to regulate the temperature. The temperatures, which can be achieved by Peltier cooling depend on the thermal design of the setup, the practical limit being about 50C below ambient. The SIPM Amp. board is a small (3x5cm) PCB that has a single SIPM readout channel. The SIPM scan be surface mounted on the pcb or connected to a 2-pin 0.100" socket. The area around the SIPM footprint is thermally isolated by perforations in the PCB. The RTD is located inside the thermal break. Onboard is BV and LV filtering. The 10X amplifier is based on MiniCircuits' GALI-S66+ integrated circuit, tweaked for a 6V power. The amplifier was selected for a combination of high bandwidth, low noise, and low power. An accoupled amplifier output is connected to an SMA connector. For best operation of this inverting amplifier the output signal should be in the range of 0 to -1V.The Amplifier board is connected to the Control board with a 10-conductor 0.025" pitch ribbon cable, carrying all the services. Peltier power for currents more than 1A should use a separate 2-contact connector.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

Rare earth separation in voltage-gated 2D MXene membranes

The separation of rare earth elements (REEs) has historically been a complicated and expensive process, producing significant amounts of pollution. To this end, MXene membranes (MXMs) have attracted researchers' interest. It has been demonstrated that MXMs are capable of separating ions and that it is possible to precisely control the separation rate by applying a voltage to the membrane. Indeed, due to their chemical nature, MXenes show outstanding electrical conductivity. However, the effect of applied voltage on the permeation rate and separation effects of iconic species remains an intriguing area of research. In this work, we demonstrate how applying different voltages (gate voltage) to a MXM affects the permeation rate of various REE ions. Our hypothesis to explain MXMs behavior towards REE is that under negative voltage, the interlayer spacing decreases due to attraction between charged MXene surfaces and intercalated cations, increasing the separation factor between REEs. Under positive voltage, the interlayer spacing increases due to repulsion between the MXene surfaces and intercalated cations. However, we demonstrate relatively poor separation capability for REEs at 1mM starting concentration and 1.0 V applied DC voltage (separation factor ~1-3). This study demonstrates the need for future experiments to observe varied experimental conditions and chemical functionalization to determine whether MXene membranes can be an efficient platform for REE separation.

36 MATERIALS SCIENCE↗

Building the next high voltage dc photogun polarized source for the ILC at JLab

During the ILC Global Design Effort (2007) two 200 kV high voltage photoguns based on an inverted insulator geometry were developed in 2010 and successfully tested at Jefferson Lab (JLab). One of the photoguns has been operated at 130 kV in the CEBAF accelerator for the JLab nuclear physics program. The inverted insulator replaces the electrode support structure, consequently significantly less metal prone to field emission is biased and surfaces contributing to the vacuum load are significantly reduced. Implementing a biased anode, and using a larger laser spot size has made this the state of the art polarized beam source with ~200 C charge lifetime from SSL GaAs photocathodes. However, operating at the design 200 kV voltage has been hindered by field emission at ~190 kV. To reliably operate without field emission requires lengthy conditioning applying 50-100 kV beyond the voltage needed for beam operations, without breakdown or damage to the insulator. Over the past decade, JLab has developed two photoguns with a larger version of the commercial inverted insulators used in the ILC design. One photogun operated at 300 kV for magnetized beam studies, and the concept has been implemented in the BNL polarized photogun. The second photogun has recently been installed in CEBAF to operate at 200 kV field emission free. Higher voltage photoguns help the ILC and CLIC achieve higher bunch charge (2013 TDR), and additionally provide margin for operating with shorter laser pulse length and/or smaller laser spot size (better emittance at higher peak current). Such photogun designs need to reach ~400 kV without breakdown or insulator damage to operate field emission free at > 300 kV. This also allows for direct injection into a SRF booster. JLab submitted a proposal to HEP for developing in partnership with industry an inverted geometry insulator to fit commercial 400 kV cables. This contribution describes JLab experience developing and testing high voltage photoguns, and what is needed to sufficiently condition for voltage levels higher than beam operational voltage.

Hernandez-Garcia, Carlos↗

Voltage Control Strategy for Energy Storage System in Sustainable Distribution System Operation

Due to the increasing penetration of distributed energy resources (DERs) required for the sustainable distribution system, new voltage control strategy is needed by utilities. Traditional voltage control strategy can not support the increasing number of DERs in a coordinated and scalable manner to meet the operational voltage regulation requirement. Supported by the power electronics converter, the energy storage system can provide fast, smooth, and flexible voltage control services. In this paper, an effective and easy to implement sensitivity-based voltage control strategy is developed for the energy storage system. The developed control strategy is validated using an industrial feeder data in Northwest Washington. The proposed strategy can mitigate the voltage unbalance issue, improve the voltage profile, and correct power factors while supporting sustainable distribution system operation.

Zhang, Yue (ORCID:0000000241469716)↗

Rapid and precise measurement of flatband voltage

The paper outlines the design, principles of operation, and calibration of a five-IC network intended to give a rapid, precise, and automatic determination of the flatband voltage of MOS capacitors. The basic principle of measurement is to compare the analog output voltage of a capacitance meter - which is directly proportional to the capacitance being measured - with a preset or dialed-in voltage proportional to the calculated flatband capacitance by means of a comparator circuit. The bias to the MOS capacitor supplied through the capacitance meter is provided by a ramp voltage going from a negative toward a positive voltage level and vice versa. The network employs two monostable multivibrators for reading and recording the flatband voltage and for resetting the initial conditions and restarting the ramp. The flatband voltage can be held and read on a digital voltmeter.

Li, S. P.↗

Open-circuit voltage improvements in low-resistivity solar cells

Mechanisms limiting the open-circuit voltage in 0.1 ohm-cm solar cells were investigated. It was found that a rather complicated multistep diffusion process could produce cells with significantly improved voltages. The voltage capabilities of various laboratory cells were compared independent of their absorption and collection efficiencies. This was accomplished by comparing the cells on the basis of their saturation currents or, equivalently, comparing their voltage outputs at a constant current-density level. The results show that for both the Lewis diffused emitter cell and the Spire ion-implanted emitter cell the base component of the saturation current is voltage controlling. The evidence for the University of Florida cells, although not very conclusive, suggests emitter control of the voltage in this device. The data suggest further that the critical voltage-limiting parameter for the Lewis cell is the electron mobility in the cell base.

Godlewski, M. P.↗

Voltage Regulators for Photovoltaic Systems

Two simple circuits developed to provide voltage regulation for highvoltage (i.e., is greater than 75 volts) and low-voltage (i.e., is less than 36 volts) photovoltaic/battery power systems. Use of these circuits results in voltage regulator small, low-cost, and reliable, with very low power dissipation. Simple oscillator circuit controls photovoltaic-array current to regulate system voltage and control battery charging. Circuit senses battery (and system) voltage and adjusts array current to keep battery voltage from exceeding maximum voltage.

Delombard, R.↗

Conceptual definition of a high voltage power supply test facility

NASA Lewis Research Center is presently developing a 60 GHz traveling wave tube for satellite cross-link communications. The operating voltage for this new tube is - 20 kV. There is concern about the high voltage insulation system and NASA is planning a space station high voltage experiment that will demonstrate both the 60 GHz communications and high voltage electronics technology. The experiment interfaces, requirements, conceptual design, technology issues and safety issues are determined. A block diagram of the high voltage power supply test facility was generated. It includes the high voltage power supply, the 60 GHz traveling wave tube, the communications package, the antenna package, a high voltage diagnostics package and a command and data processor system. The interfaces with the space station and the attached payload accommodations equipment were determined. A brief description of the different subsystems and a discussion of the technology development needs are presented.

Biess, John J.↗

PASP, a high voltage array/plasma interaction experiment

The author discusses the photovoltaic array space power (PASP) experiment, which is designed to obtain data on the interaction between high-voltage photovoltaic arrays and the polar, low-earth plasma environment. Up to six small test arrays (three each of planar and concentrator designs) can be voltage biased over a range of +/- 500 V. During the bias voltage sequence, the array current leakage is measured and array arc events are monitored. If any arcing occurs the arc characteristics will be measured by a transient pulse monitor. An emitter is included to allow voltage bias to be applied to a plasma-charged or uncharged spacecraft. Similarly, the frames of the concentrator arrays can be left floating or can be tied to the negative array terminal. An environmental data scan is made before each bias voltage sequence. This scan collects information on the plasma, array-current-versus-voltage curves, and neutral particle partial pressure. The requirement for high voltages created problems which were met by circuit isolation and logical fault protection.

Burger, Dale R.↗

An Active Substrate Driver for Enabling Mixed-Voltage SOI Systems-On-A-Chip

The current trend for space application systems is towards fully integrated systems-on-a-chip. To facilitate this drive, high-voltage transistors must reside on the same substrate as low-voltage transistors. These systems must also be radiation tolerant, particularly for space missions such as the Europa Lander and Titan Explorer. SOI CMOS technology offers high levels of radiation hardness. As a result, a high-voltage lateral MOSFET has been developed in a partially-depleted (PD) SOI technology. Utilizing high voltages causes a parasitic transistor to have non-negligible effects on a circuit. Several circuit architectures have been used to compensate for the radiation induced threshold voltage shift of the parasitic back-channel transistor. However, a new architecture for high-voltage systems must be employed to bias the substrate to voltage levels insuring all parasitic transistors remain off. An active substrate driver has been developed to accomplish task. Additional information is contained in the original extended abstract.

Jackson, S. A.↗

The Series Connected Buck Boost Regulator Concept for High Efficiency Light Weight DC Voltage Regulation

Improvements in the efficiency and size of DC-DC converters have resulted from advances in components, primarily semiconductors, and improved topologies. One topology, which has shown very high potential in limited applications, is the Series Connected Boost Unit (SCBU), wherein a small DC-DC converter output is connected in series with the input bus to provide an output voltage equal to or greater than the input voltage. Since the DC-DC converter switches only a fraction of the power throughput, the overall system efficiency is very high. But this technique is limited to applications where the output is always greater than the input. The Series Connected Buck Boost Regulator (SCBBR) concept extends partial power processing technique used in the SCBU to operation when the desired output voltage is higher or lower than the input voltage, and the implementation described can even operate as a conventional buck converter to operate at very low output to input voltage ratios. This paper describes the operation and performance of an SCBBR configured as a bus voltage regulator providing 50 percent voltage regulation range, bus switching, and overload limiting, operating above 98 percent efficiency. The technique does not provide input-output isolation.

Birchenough, Arthur G.↗

Impact of Solar Array Designs on High Voltage Operations

As power levels of advanced spacecraft climb above 25 kW, higher solar array operating voltages become attractive. Even in today s satellites, operating spacecraft buses at 100 V and above has led to arcing in GEO communications satellites, so the issue of spacecraft charging and solar array arcing remains a design problem. In addition, micrometeoroid impacts on all of these arrays can also lead to arcing if the spacecraft is at an elevated potential. For example, tests on space station hardware disclosed arcing at 75V on anodized A1 structures that were struck with hypervelocity particles in Low Earth Orbit (LEO) plasmas. Thus an understanding of these effects is necessary to design reliable high voltage solar arrays of the future, especially in light of the Vision for Space Exploration of NASA. In the future, large GEO communication satellites, lunar bases, solar electric propulsion missions, high power communication systems around Mars can lead to power levels well above 100 kW. As noted above, it will be essential to increase operating voltages of the solar arrays well above 80 V to keep the mass of cabling needed to carry the high currents to an acceptable level. Thus, the purpose of this paper is to discuss various solar array approaches, to discuss the results of testing them at high voltages, in the presence of simulated space plasma and under hypervelocity impact. Three different types of arrays will be considered. One will be a planar array using thin film cells, the second will use planar single or multijunction cells and the last will use the Stretched Lens Array (SLA - 8-fold concentration). Each of these has different approaches for protection from the space environment. The thin film cell based arrays have minimal covering due to their inherent radiation tolerance, conventional GaAs and multijunction cells have the traditional cerium-doped microsheet glasses (of appropriate thickness) that are usually attached with Dow Corning DC 93-500 silicone adhesive. In practice, these cover glasses and adhesive do not cover the cell edges. Finally, in the SLA, the entire cell and cell edges are fully encapsulated by a cover glass that overhangs the cell perimeter and the silicone adhesive covers the cell edges providing a sealed environment. These three types of blanket technology have been tested at GRC and Auburn. The results of these tests will be described. For example, 15 modules composed of four state-of-the-art 2x4 cm GaAs solar cells with 150 pm cover glasses connected in two-cell series strings were tested at high voltage, in plasma under hypervelocity impact. A picture of one of the modules is shown in figure 1. These were prepared by standard industry practice from a major supplier and had efficiencies above 18%. The test results and other fabrication factors that influenced the tests will be presented. In addition, results for SLA segments tested under the same conditions will be presented. Testing of thin film blankets at GRC will also be presented. Figure 1 : Typical GaAs Solar Cell Module These results will show significant differences in resistance to arcing that are directly related to array design and manufacturing procedures. Finally, the approaches for mitigating the problems uncovered by these tests will be described. These will lay the foundation for future higher voltage array operation, even including voltages above 300-600 V for direct drive SEP applications.

Brandhorst, Henry W., Jr.↗

High-Voltage, Low-Power BNC Feedthrough Terminator

This innovation is a high-voltage, lowpower BNC (Bayonet Neill-Concelman) feedthrough that enables the user to terminate an instrumentation cable properly while connected to a high voltage, without the use of a voltage divider. This feedthrough is low power, which will not load the source, and will properly terminate the instrumentation cable to the instrumentation, even if the cable impedance is not constant. The Space Shuttle Program had a requirement to measure voltage transients on the orbiter bus through the Ground Lightning Measurement System (GLMS). This measurement has a bandwidth requirement of 1 MHz. The GLMS voltage measurement is connected to the orbiter through a DC panel. The DC panel is connected to the bus through a nonuniform cable that is approximately 75 ft (approximately equal to 23 m) long. A 15-ft (approximately equal to 5-m), 50-ohm triaxial cable is connected between the DC panel and the digitizer. Based on calculations and simulations, cable resonances and reflections due to mismatched impedances of the cable connecting the orbiter bus and the digitizer causes the output not to reflect accurately what is on the bus. A voltage divider at the DC panel, and terminating the 50-ohm cable properly, would eliminate this issue. Due to implementation issues, an alternative design was needed to terminate the cable properly without the use of a voltage divider. Analysis shows how the cable resonances and reflections due to the mismatched impedances of the cable connecting the orbiter bus and the digitizer causes the output not to reflect accurately what is on the bus. After simulating a dampening circuit located at the digitizer, simulations were performed to show how the cable resonances were dampened and the accuracy was improved significantly. Test cables built to verify simulations were accurate. Since the dampening circuit is low power, it can be packaged in a BNC feedthrough.

Bearden, Douglas↗

Hybrid-PIC Modeling of a High-Voltage, High-Specific-Impulse Hall Thruster

The primary life-limiting mechanism of Hall thrusters is the sputter erosion of the discharge channel walls by high-energy propellant ions. Because of the difficulty involved in characterizing this erosion experimentally, many past efforts have focused on numerical modeling to predict erosion rates and thruster lifespan, but those analyses were limited to Hall thrusters operating in the 200-400V discharge voltage range. Thrusters operating at higher discharge voltages (V(sub d) >= 500 V) present an erosion environment that may differ greatly from that of the lower-voltage thrusters modeled in the past. In this work, HPHall, a well-established hybrid-PIC code, is used to simulate NASA's High-Voltage Hall Accelerator (HiVHAc) at discharge voltages of 300, 400, and 500V as a first step towards modeling the discharge channel erosion. It is found that the model accurately predicts the thruster performance at all operating conditions to within 6%. The model predicts a normalized plasma potential profile that is consistent between all three operating points, with the acceleration zone appearing in the same approximate location. The expected trend of increasing electron temperature with increasing discharge voltage is observed. An analysis of the discharge current oscillations shows that the model predicts oscillations that are much greater in amplitude than those measured experimentally at all operating points, suggesting that the differences in oscillation amplitude are not strongly associated with discharge voltage.

Hall Thrusters↗

Architecture, Voltage, and Components for a Turboelectric Distributed Propulsion Electric Grid

The development of a wholly superconducting turboelectric distributed propulsion system presents unique opportunities for the aerospace industry. However, this transition from normally conducting systems to superconducting systems significantly increases the equipment complexity necessary to manage the electrical power systems. Due to the low technology readiness level (TRL) nature of all components and systems, current Turboelectric Distributed Propulsion (TeDP) technology developments are driven by an ambiguous set of system-level electrical integration standards for an airborne microgrid system (Figure 1). While multiple decades' worth of advancements are still required for concept realization, current system-level studies are necessary to focus the technology development, target specific technological shortcomings, and enable accurate prediction of concept feasibility and viability. An understanding of the performance sensitivity to operating voltages and an early definition of advantageous voltage regulation standards for unconventional airborne microgrids will allow for more accurate targeting of technology development. Propulsive power-rated microgrid systems necessitate the introduction of new aircraft distribution system voltage standards. All protection, distribution, control, power conversion, generation, and cryocooling equipment are affected by voltage regulation standards. Information on the desired operating voltage and voltage regulation is required to determine nominal and maximum currents for sizing distribution and fault isolation equipment, developing machine topologies and machine controls, and the physical attributes of all component shielding and insulation. Voltage impacts many components and system performance.

electric faults↗

Understanding What Limits the Voltage of Polycrystalline CdSeTe Solar Cells

The origin of voltage deficits in polycrystalline cadmium selenide telluride (CdSeTe) solar cells is unclear. Here, we present a comprehensive voltage loss analysis performed on state-of-the-art CdSeTe devices - fabricated at Colorado State University and First Solar - using photoluminescence techniques, including external radiative efficiency (ERE) measurements. More specifically, we report the thermodynamic voltage limit Voc,ideal, internal voltage iVoc and external voltage Voc of partially and fully finished cells fabricated with different dopant species, dopant concentrations and back contacts. Arsenic-doped aluminium-oxide-passivated cells made at Colorado State University present remarkably high ERE (>1%) - translating into iVoc above 970 mV - but suffer from poor back-contact selectivity. On the other hand, arsenic-doped devices from First Solar present almost perfect carrier selectivity (Voc=iVoc), leading to Voc above 840 mV, and are limited by recombination in various parts of the device. Thus, development of contact structures that are both passivating and selective in combination with highly luminescent absorbers is key to reducing voltage losses.

CdSeTe devices↗