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At least 163 records · Page 9

All sources NASA NTRS DOE OSTI

DOE OSTI2022

Resistive switching properties of monolayer h-BN atomristors with different electrodes

Resistive switching properties based on molecular beam epitaxy-grown monolayer hexagonal boron nitride (h-BN) atomristors are studied by using metal insulator metal configurations with different electrode materials. Au/monolayer h-BN/Ni devices demonstrate a forming-free bipolar resistive switching (BRS) behavior, a good endurance with up to 97 cycles at a high compliance current of 100 mA, an average on/off ratio of 10 3 , and a low set/reset voltage variability. Metal/monolayer h-BN/graphite/Co devices exhibit self-compliant current BRS characteristics. Both metal/h-BN/Ni and metal/h-BN/graphite/Co devices show the coexistence of BRS, unipolar resistive switching (URS), and nonvolatile threshold switching (TH) modes. The formation of conductive filaments is attributed to the diffusion and trapping of metal ions on the defect sites driven by the electric field, while the rupture is driven by the electric field in BRS and by Joule heating in URS and TH modes.

74 ATOMIC AND MOLECULAR PHYSICS↗

DOE OSTI2023

Pulse shape measurements for neutron/gamma discrimination using the TOFPET2 ASIC

Many highly pixelated organic scintillator detection systems would benefit from independent readout of each scintillator pixel. Recent advances in Silicon Photomultiplier (SiPM) technology makes this goal feasible, however the data acquisition from potentially hundreds or thousands of channels requires a low-cost and compact solution. For pixelated neutron detection with organic scintillators, the capability to distinguish between neutron and gamma interactions using Pulse Shape Discrimination (PSD) is required along with pulse charge and time of arrival. The TOFPET2 ASIC from PETsys Electronics is a 64-channel readout chip providing pulse time and charge integration measurements from SiPMs, and is specifically designed for time-of-flight positron-emission tomography. Using an 8 × 8 array of 6 mm × 6 mm J-series SiPMs from SensL/OnSemi (ArrayJ-60035-64P-PCB), we have studied the energy and PSD performance of the TOFPET2 ASIC using a 4 × 4 array of 6 mm × 6 mm × 30 mm trans -Stilbene crystals from Inrad Optics and a custom SiPM routing board from PETsys Electronics. In conclusion, using a time-over-threshold method, we measure a maximum PSD figure-of-merit of approximately 1.2 at 478 keV (the Compton edge of 662 keV) for a J-series SiPM operating at an over-voltage of 3V.

47 OTHER INSTRUMENTATION↗

DOE OSTI2025

Detecting Short Circuits: Post Accident Electric Vehicle Battery Safety Check

Fast and accurate detection of soft short circuits (SCs) in the battery packs of damaged electric vehicles is needed by first responders and mechanics to mitigate the potential risk from battery fires that may occur hours, days, or weeks after an accident. Here, this paper presents an SC-detection algorithm for potentially damaged lithium-ion batteries that works quickly and without a priori knowledge of the battery-pack chemistry, capacity, state of charge, or state of health. The proposed universal SC-detection algorithm is designed to be implemented on an inexpensive handheld device that can connect to and monitor the voltages of all cells in a pack. Transient filtering and linear-quadratic state observation provide estimates of normalized SC current for every cell in the pack. Cells with SC-current estimates outside a sigma-based threshold are detected. Simulations, experiments, and electric vehicle (EV) crash data are used to verify the speed, sensitivity, and accuracy of the method, demonstrating 96% accurate detection of 0.0027 C SCs in under 1 h for 5S cell groups in the lab and no false positives for crashed Volkswagen, Chevrolet, and Tesla vehicles without SCs.

25 - ENERGY STORAGE↗

DOE OSTI2023

Current fluctuations and domain depinning in quasi-two-dimensional charge-density-wave 1 T -TaS 2 thin films

We investigated the temperature dependence of the current fluctuations in thin films of the quasi-two-dimensional 1T-TaS 2 van der Waals material. The current fluctuations, determined from the derivative current–voltage characteristics of two-terminal 1T-TaS 2 devices, appear prominently at the electric fields that correspond to the transitions between various charge-density-wave macroscopic quantum condensate phases and at the onset of the depinning of the charge density wave domains. The depinning threshold field, ED, monotonically increases with decreasing temperature within the nearly commensurate charge-density-wave phase. The ED value increases with the decreasing 1T-TaS 2 film thickness, revealing the surface pinning of the charge density waves. Our analysis suggests that the domain depinning is pronounced in the nearly commensurate phase. It is induced by the electric field but facilitated by local heating. Furthermore, the measured trends for ED of the domain depinning are important for understanding the physics of charge density waves in quasi-two-dimensional crystals and for developing electronic devices based on this type of quantum materials.

2D materials↗

DOE OSTI2025

Erosion of high-Z refractory coatings for helicon plasma source window

Proto-MPEX (Materials Plasma Exposure eXperiment), a linear plasma device (LPD), using a high power radio frequency (RF) (⩾100 kW, 13.56 MHz) helicon plasma source, has suffered RF sheath-induced window erosion. The sputtered impurities from the window surface transport toward the downstream target affecting plasma-material interaction studies. The rectified sheath voltage formed was high enough to cause window erosion by light ions due to its low-Z components (e.g. Si 3 N 4 and AlN). Hence, we are proposing impurity mitigation strategies, which involve the application of a Faraday screen to lower the rectified sheath voltage and the application of high-Z refractory coatings on the existing window plasma-facing surface. In this work, we report the erosion of two different coatings, i.e., tantalum oxide (Ta 2 O 5 ) and hafnium oxide (HfO 2 ) on a silicon nitride (Si 3 N 4 ) window material under conditions of low-energy deuterium (D) ion impact, well below the Ta 2 O 5 sputtering energy threshold (i.e. 250 eV). The test samples were RF-biased and exposed to a high D-ion fluence (∼10 26 m −2 ) in Plasma Interaction with Surface Component Experimental Station (PISCES-A) LPD. The experimentally measured sputtering yields of the high-Z refractory coatings below the sputtering energy threshold of Ta 2 O 5 indicate an increased erosion due to the plasma impurities, especially due to oxygen. Improving the vacuum level could reduce the oxygen impurities and increase the lifespan of the coated helicon window for plasma operation. Post-surface analysis indicates no preferential erosion of oxygen or enrichment of the high-Z surface component. This is likely due to an effective energy transfer from the impurity ion for sputtering of the high-Z component in the coating. With the reduced rectified sheath voltage at the window surface and improved vacuum conditions, the proposed high-Z refractory coatings offer a promising solution for reducing window erosion in future MPEX plasma operations at ORNL.

RF bias↗

DOE OSTI2023

Designing an Intrusion Detection for an Adjustable Speed Drive System Controlling a Critical Process

In this article, we address the cyber-security problem of industrial control systems (ICSs) when their sensor measurements may be compromised due to an attacker who has intercepted those measurements via a network. We introduce a general-purpose method “Dynamic Watermarking (DW)” to detect potential cyber-intrusions on speed sensor measurements within industrial control systems, which deploy an adjustable speed drive (ASD) to control a critical process. The DW method is injecting a random private low-amplitude signal with a zero mean Gaussian distribution, “watermark”, into one of the input phase voltages powering the ASD system. The watermark signal propagates through the system including pulse width modulation (PWM) power conversion stage and motor, then ultimately appears in the speed sensor measurements. By deploying two statistical DW tests with two proper thresholds, the system can detect potential cyber-intrusions or unobservable cyber-attacks such as replay attacks and false data injection attacks (FDIA). The DW method tested on a laboratory-scale ASD system experimentally to protect the system against cyber-intrusions. This system, powered by a commercial PWM drive operating at 208 V, 3-phase, and 3.7 kW, served as our experimental platform.

42 ENGINEERING↗

DOE OSTI2025

AI-Enabled Operations at Fermi Complex: Multivariate Time Series Prediction for Outage Prediction and Diagnosis

The Main Control Room of the Fermilab accelerator complex continuously gathers extensive time-series data from thousands of sensors monitoring the beam. However, unplanned events such as trips or voltage fluctuations often result in beam outages, causing operational downtime. This downtime not only consumes operator effort in diagnosing and addressing the issue but also leads to unnecessary energy consumption by idle machines awaiting beam restoration. The current threshold-based alarm system is reactive and faces challenges including frequent false alarms and inconsistent outage-cause labeling. To address these limitations, we propose an AI-enabled framework that leverages predictive analytics and automated labeling. Using data from $2,703$ Linac devices and $80$ operator-labeled outages, we evaluate state-of-the-art deep learning architectures, including recurrent, attention-based, and linear models, for beam outage prediction. Additionally, we assess a Random Forest-based labeling system for providing consistent, confidence-scored outage annotations. Our findings highlight the strengths and weaknesses of these architectures for beam outage prediction and identify critical gaps that must be addressed to fully harness AI for transitioning downtime handling from reactive to predictive, ultimately reducing downtime and improving decision-making in accelerator management.

Jain, Milan [PNL, Richland] (ORCID:000000021676111↗

DOE OSTI2020

Structural Instability in Electrically Stressed, Oxygen Deficient BaTiO 3 Nanocrystals

The dynamics of oxygen vacancies under external stimuli dominates the performance of many solid-state devices, including capacitors, oxide memristors, anionic conductors, etc. By means of in-situ Transmission Electron Microscopy, we found in BaTiO 3 perovskite nanocrystals that formation of oxygen vacancies due to electrical stressing renders the oxide amorphizable under electron beam illumination, suggesting the presence of a threshold concentration of oxygen vacancy affecting the structural stability of BaTiO 3 crystals upon high energy radiation. In contrast to the structural change, the resistivity of the nanocrystal seems not liable to the amorphization prior to dielectric breakdown at higher voltage bias. Here, we propose that an increase in oxygen vacancy content promotes oxygen mobility in the perovskite structure allowing electron beam induced electric field to modify the local structural and composition. Our in-situ observations reveal the central role of oxygen vacancies in the structural stability of perovskites which is of paramount importance to their applications in extreme environments and suggest a potential new route to micro-processing perovskite oxides using the electron beam via oxygen vacancy management without severely compromising the electric property.

36 MATERIALS SCIENCE↗

DOE OSTI2025

Measurement of electrical characteristics of Ge-based diodes with thermal GeO2 films exposed to controlled humidity conditions

We investigated the impact of the interaction between gas-phase water molecules and thermally oxidized GeO2 on Ge on the performance of metal–oxide–semiconductor (MOS) structures. A vacuum-integrated setup was developed to form MOS diodes with a GeO2/Ge structure that had been exposed to controlled humidity conditions and to subsequently measure their electrical characteristics in situ. The capacitance–voltage (C–V) curves exhibited a significant negative shift, indicating the generation of positive charges at the GeO2/Ge interface when the GeO2 surface was exposed to humidity levels above approximately 1%. According to a previous study using electron spectroscopy, this threshold corresponds to the humidity level at which molecular water begins to grow on a GeO2/Ge structure. It is likely that gas-phase water molecules infiltrating the GeO2 film bind to local OH sites via hydrogen bonding, leading to the formation of positive fixed charges at the GeO2/Ge interface.

Sano, Shuto↗

DOE OSTI2026

A Simulator for Neyer Tests of Explosives

Explosives and explosive devices such as detonators are typically tested by applying a range of stimuli such as voltage or mechanical shock, and recording binary “detonated/did not detonate” responses. These are analyzed using maximum likelihood or generalized linear models to provide estimates of quantities such as the all-fire and no-fire points. Given that the true threshold for detonation is unknown a priori , sequential design methods are typically used to optimize the set of test points. One popular method, implemented in commercial software, is Neyer’s algorithm. To support simulation and experimental design, we have developed code in the R programming language to duplicate the functions of the Neyer software. We provide code for the simulator along with a description and examples of usage.

42 ENGINEERING↗

DOE OSTI2023

PV Inverter Testing for Momentary Cessation and Rate-of-Change-of-Frequency Events

To understand the power system stability and develop better electromagnetic transient (EMT) models of field deployed photovoltaic (PV) inverters, it is important to characterize inverters' response to abnormal voltage and frequency scenarios. Because EMT models are not typically available for small distribution-connected PV inverters, and because inerterconnection standards historically did not specify desired ride-through behaviors, we tested two such inverters in the lab to characterize their responses to severe undervoltage events and high rate-of-change-of-frequency (ROCOF) conditions. The inverters tested were pre-IEEE 1547-2018 residential PV inverters widely used in the Hawaiian Electric territory and many other areas. The testing results for undervoltage scenarios showed that the inverter from one vendor exhibited momentary cessation while the inverter from the other vendor did not exhibit momentary cessation behavior or tripping for most of the events below the 120 ms undervoltage trip threshold duration set by IEEE 1547-2003. The testing results for ROCOF scenarios showed that the inverter from one vendor temporarily lost synchronization during ROCOF conditions while the inverter from the other vendor did not lose synchronization or cease generation for any ROCOF conditions. Both the inverters were also tested for EMT-simulated grid events with severe changes in frequency and voltage. The observed responses of the inverters were different from the simulated response of PV inverters represented the best available assumptions from pre-existing information. The results from these experiments can be used to update the inverter models used in bulk power system studies.

aggregates↗

DOE OSTI2023

PV Inverter Testing for Momentary Cessation and Rate-of-Change-of-Frequency Events: Preprint

IEEE 1547 2018↗

DOE OSTI2021

Cyber Physical Grid-Interactive Distributed Energy Resources Control for VPP Dispatch and Regulation

This paper presents a cyber-physical algorithm for grid-interactive Distributed Energy Resource (DER) control to enable two features of Virtual Power Plants (VPPs) dispatch and grid voltage regulation, considering the communication and security impacts. We first formulate the DER dispatch problem as a real-time, iterative, and grid-interactive DER control problem. Thereafter, we consider a probabilistic traffic model to characterize packet delays and loss in a communication network, and study how the delays enter the process of information exchange among the grid measurement units, local DER controllers and the grid control center that coordinately execute this dispatch algorithm. Finally, a strategy combining delay threshold and modified message update rules is proposed to immune the asynchrony resulting from the communications network traffic and it avoids possible numerical instabilities and sensitivities of the tracking and regulation capabilities of this DER control algorithm. By implementing the proposed cyber-physical algorithm on the modified IEEE 37-node system, our preliminary results exhibit that the uncertainties of the underlying communications infrastructure must be considered for the VPP tracking and regulation capabilities of any DER in a generic Cyber-Physical System (CPS), because the delayed voltage measurements in the uplink/bi-link cases result in the off-track in VPP dispatch and jittery in voltage regulation.

cyber-physical algorithm↗

DOE OSTI2023

20-kV GaN Switch Technology Demonstrated in High-Efficiency Medium-Voltage Power Module

GaN holds significant potential as a material for vertical p-n diodes, enabling the realization of devices with reverse breakdown voltages of 5 kV or higher. Carbon serves as the primary compensating dopant in the growth process, incorporated into GaN during metalorganic chemical vapor deposition (MOCVD) growth. The level of carbon incorporation depends on several factors, including growth rate, ammonia flow, temperature, pressure, and trimethylgallium (TMGa) flow. Through guided empirical modeling, the carbon incorporation in GaN growth could be predicted using a single parameter based on the ratio of ammonia flow to the growth rate. This model accurately predicts carbon concentrations ranging from 1x10 17 to 5x10 14 cm -3 while maximizing growth rates. Other extrinsic dopants have either been reduced below the threshold of consideration or modeled using similar single-parameter relationships. By identifying the dominant extrinsic dopants and accounting for them, an intrinsic defect with a concentration of 2.2x10 15 cm -3 was identified. By combining these relationships, growth conditions for n-GaN were optimized, resulting in electron concentrations as low as 1x10 15 cm -3 . Leveraging these techniques, p-n diodes were grown, achieving a reverse breakdown voltage as high as 3.1 kV.

36 MATERIALS SCIENCE↗

DOE OSTI2024

Selected Area Manipulation of MoS 2 via Focused Electron Beam-Induced Etching for Nanoscale Device Editing

Here we demonstrate direct-write patterning of single and multilayer MoS 2 via a focused electron beam-induced etching (FEBIE) process mediated with the XeF 2 precursor. MoS 2 etching is performed at various currents, areal doses, on different substrates, and characterized using scanning electron and atomic force microscopies as well as Raman and photoluminescence spectroscopies. Scanning transmission electron microscopy reveals a sub-40 nm etching resolution and the progression of point defects and lateral etching of the consequent unsaturated bonds. The results confirm that the electron beam-induced etching process is minimally invasive to the underlying material in comparison to ion beam techniques, which damage the subsurface material. Single-layer MoS 2 field-effect transistors are fabricated, and device characteristics are compared for channels that are edited via the selected area etching process. The source–drain current at constant gate and source–drain voltage scale linearly with the edited channel width. Moreover, the mobility of the narrowest channel width decreases, suggesting that backscattered and secondary electrons collaterally affect the periphery of the removed area. Focused electron beam doses on single-layer transistors below the etching threshold were also explored as a means to modify/thin the channel layer. The FEBIE exposures showed demonstrative effects via the transistor transfer characteristics, photoluminescence spectroscopy, and Raman spectroscopy. While strategies to minimize backscattered and secondary electron interactions outside of the scanned regions require further investigation, here, we show that FEBIE is a viable approach for selective nanoscale editing of MoS 2 devices.

36 MATERIALS SCIENCE↗

DOE OSTI2020

1.5 – 1.6 μm semiconductor lasers with an asymmetric periodic optically coupled waveguide

High-power 1.5 – 1.6-μm semiconductor lasers with an asymmetric periodic optically coupled waveguide are developed and their current – voltage, light – current, and spectral characteristics are experimentally studied. The characteristics of these lasers are compared with the characteristics of traditional lasers based on double separate-confinement heterostructures. It is shown that the developed lasers have lower divergence and almost the same threshold and power characteristics as conventional lasers with Fabry – Perot resonators. The developed lasers with a cavity length of 1.6 mm and a mesa-stripe contact width of 3 μm mounted in a housing 11 mm in diameter have a power no lower than 200 mW at a pump current not exceeding 700 mA with a divergence of 25 – 35° versus 45° typical for conventional lasers. (lasers)

36 MATERIALS SCIENCE↗

DOE OSTI2026

Automation of Nanoparticle Synthesis Processes in a Plasma Environment Using LabVIEW

This work presents an automated control system for the synthesis of nanomaterials by plasma-enhanced chemical vapor deposition (PECVD), implemented using the LabVIEW software environment. The main objective of the study is to develop an integrated hardware-software platform that enables sequential control of the key stages of the PECVD process, including vacuum chamber preparation, pressure monitoring, working gas supply, plasma ignition, power matching, cyclic nanomaterial growth, and optical monitoring of nanoparticles in the plasma environment. The use of LabVIEW made it possible to integrate actuator control, experimental parameter acquisition, and realtime process visualization within a single automated system. The automated cycle begins with evacuation of the reaction chamber to a predefined base pressure. Transition to the next stage is permitted only after the specified pressure threshold has been reached, ensuring reproducible initial conditions for each experiment. The program then controls the supply of the working gas through mass flow controllers (MFCs). In this work, two gas-flow control modes were considered: analog control using a 0-5 V voltage signal and digital communication via RS-232 interface. It was shown that the analog approach requires accurate scaling of the control voltage, since applying 5 V corresponds to full-scale opening of the controller and results in the maximum gas flow. In contrast, the RS232 interface enables the gas flow rate to be specified directly in sccm, improving the accuracy, flexibility, and convenience of gas-environment control. After pressure stabilization, LabVIEW initiates RF plasma ignition and executes the RF matching algorithm aimed at minimizing reflected power and improving the stability of the plasma process. A separate software module implements the cyclic nanomaterial growth mode, in which the plasma-on time, plasma duration, and total number of synthesis cycles are predefined. This approach makes it possible to control material accumulation on the substrate and to correlate the process parameters with the morphological characteristics of the resulting nanostructures. The final module of the system is designed for optical monitoring of the nanoparticle cloud density in dusty plasma. For this purpose, the change in the intensity of laser radiation passing through the plasma region is recorded using a photodetector and a Keithley 2401 measuring unit connected to LabVIEW via RS-232 interface. The difference between the initial and modified optical signal intensity is used as a diagnostic parameter characterizing the formation and temporal evolution of nanoparticles. The developed system demonstrates that LabVIEW can be effectively applied not only for the automation of individual instruments, but also for the implementation of a complete digital control cycle for PECVD-based nanomaterial synthesis.

PECVD↗

DOE OSTI2024

ML-based calibration and control of the GlueX Central Drift Chamber

The GlueX Central Drift Chamber (CDC) in Hall D at Jefferson Lab, used for detecting and tracking charged particles, is calibrated and controlled during data taking using a Gaussian process. The system dynamically adjusts the high voltage applied to the anode wires inside the chamber in response to changing environmental and experimental conditions such that the gain is stabilized. Control policies have been established to manage the CDC's behavior. These policies are activated when the model's uncertainty exceeds a configurable threshold or during human-initiated tests during normal production running. Finally, we demonstrate the system reduces the time detector experts dedicate to calibration of the data offline, leading to a marked decrease in computing resource usage without compromising detector performance.

47 OTHER INSTRUMENTATION↗