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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 163 records · Page 9

Thin n-i-p radiation-resistant solar cell feasibility study

Silicon solar cells were fabricated to verify the predictions that: (1) thin n(+)pp(+) cells can provide high values of open circuit voltage even when high resistivity base material ( 1000 omega-cm) is used; (2) cells with good p(+) back contacts will display an increase in open circuit voltage with decreasing cell thickness; and (3) high quality, thin, high resistivity, solar cells can be made using processing compatible with conventional practice. Analysis of I-V and spectral response measurements of these cells confirmed theoretical predictions and thereby pointed to voltages beyond the near 600 mV obtained in this study.

Allison, J. F.↗

Ultra-thin, light-trapping silicon solar cells

Design concepts for ultra-thin (2 to 10 microns) high efficiency single-crystal silicon cells are discussed. Light trapping allows more light to be absorbed at a given thickness, or allows thinner cells of a given Jsc. Extremely thin cells require low surface recombination velocity at both surfaces, including the ohmic contacts. Reduction of surface recombination by growth of heterojunctions of ZnS and GaP on Si has been demonstrated. The effects of these improvements on AM0 efficiency is shown. The peak efficiency increases, and the optimum thickness decreases. Cells under 10 microns thickness can retain almost optimum power. The increase of absorptance due to light trapping is considered. This is not a problem if the light-trapping cells are sufficiently thin. Ultra-thin cells have high radiation tolerance. A 2 microns thick light-trapping cell remains over 18 percent efficient after the equivalent of 20 years in geosynchronous orbit. Including a 50 microns thick coverglass, the thin cells had specific power after irradiation over ten times higher than the baseline design.

Landis, Geoffrey A.↗

Tungsten wire and tubing joined by nickel brazing

Thin tungsten wire and tungsten tubing are brazed together using a contacting coil of nickel wire heated to its melting point in an inert-gas atmosphere. This method is also effective for brazing tungsten to tungsten-rhenium parts.

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Guidance and control research

Guidance and control research - Josephson junction memory elements, frequency response of thin film thermal detectors, gallium selenide barrier gate, and photoconductor metal contacts

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Microconvection in evaporation and microconvection in ice formation

Absorption of solar radiation by sea water with contact heat exchange and evaporation leads to the formation of a thin cold film on the ocean surface. Microconvection to ice in this thin surface layer is attributed to nonuniform temperature distributions in wind and water and irregular drag by the air currents.

Shumilov, A. V.↗

Technology for satellite power conversion

The work performed in this reporting period has concentrated on the metal-oxide-metal (MOM) diode. The fabrication procedure begins with the deposition of gold probing pads to provide a non-oxidizing contact to test the dc characteristics to the diode accurately. A thin patch capped with an insulating SiO2 layer, is deposited next to form the first half of the diode. The other half of the diode, typically Ni, is deposited completing the conduction path from the oxidized edge of the Ni patch to the opposite gold probing pad. It is important in this step that the last metallization take place without exposing the newly oxidized surface to the atmosphere. Successful production of diodes has been achieved. Work on millimeter wave frequency rectennas incorporating known semiconductor diode technology has been initiated.

Gouker, M. A.↗

Thermal Remote Anemometer Device

Thermal Remote Anemometer Device developed for remote, noncontacting, passive measurement of thermal properties of sample. Model heated locally by scanning laser beam and cooled by wind in tunnel. Thermal image of model analyzed to deduce pattern of airflow around model. For materials applications, system used for evaluation of thin films and determination of thermal diffusivity and adhesive-layer contact. For medical applications, measures perfusion through skin to characterize blood flow and used to determine viabilities of grafts and to characterize tissues.

Heyman, Joseph S.↗

Resonant tunneling IR detectors

Researchers propose a novel semiconductor heterojunction photodetector which would have a very low dark current and would be voltage tunable. A schematic diagram of the device and its band structure are shown. The two crucial components of the device are a cathode (InGaAs) whose condition band edge is below the conduction band edge of the quantum wells and a resonant tunneling filter (GaAs-AlGaAs). In a standard resonant tunneling device the electrodes are made of the same material as the quantum wells, and this device becomes highly conducting when the quantum levels in the wells are aligned with the Fermi level in the negatively biased electrode. In contrast, the researchers device is essentially non-conducting under the same bias conditions. This is because the Fermi Level of the cathode (InGaAs) is still well below the quantum levels so that no resonant transport occurs and the barriers (AlGaAs) effectively block current flow through the device. However, if light with the same photon energy as the conduction-band discontinuity between the cathode and the quantum wells, E sub c3-E sub c1, is shone on the sample, free carriers will be excited to an energy corresponding to the lowest quantum level in the well closest to the cathode (hv plue E sub c1 = E sub o). These electrons will resonantly tunnel through the quantum wells and be collected as a photocurrent in the anode (GaAs). To improve the quantum efficiency, the cathode (InGaAs) should be very heavily doped and capped with a highly reflective metal ohmic contact. The thickness of the device should be tailored to optimize thin film interference effects and afford the maximum absorption of light. Because the device relies on resonant tunneling, its response should be very fast, and the small voltages needed to change the responsivity should allow for very high frequency modulation of the photocurrent. In addition, the device is tuned to a specific photon energy so that it can be designed to detect a fairly narrow range of wavelengths. This selectivity is important for reducing the photocurrent due to spurious light sources.

Woodall, Jerry M.↗

The Black Pearl mine, Arizona - Wolframite veins and stockscheider pegmatite related to an albitic stock

Wolframite-bearing quartz veins flanked by greisen alteration occur at and near the Black Pearl mine, Yavapai County, Arizona. The veins are genetically related to a small albitite stock, and cut a series of Proterozoic metasedimentary and intrusive rocks. The largest vein, the only one mined, is located at the apex of the stock. Field relations imply that this stock is a late-stage differentiate of time 1.4-Ga anorogenic Lawler Peak batholith, which crops out about 3 km to the south. The albitites are of igneous origin and have suffered only minor deuteric alteration. A thin (1 to 2 m) pegmatite unit ('stockscheider') occurs at the contact of the Black Pearl Albitite stock with the country rocks. Directional indicators and other evidence suggest that the pegmatite was formed in the presence of a volatile-rich fluid phase close to the time of magma emplacement. The sudden change from coarse-grained microcline-rich pegmatite to fine-grained, albite-rich albitite suggests pressure quenching, possibly due to escape of fluids up the Black Pearl vein. Stockscheider-like textures typically occur near the apical contacts of productive plutons. The presence or absence of this texture is a useful guide in prospecting for lithophile metal deposits.

Schmitz, Christopher↗

[Microfabricated X-ray Optics Technology Development for the Constellation X-Mission]

MIT has previously developed advanced methods for the application of silicon microstructures (so-called microcombs) in the precision assembly of foil x-ray optics in support of the Constellation-X Spectroscopy X-ray Telescope (SXT) technology development at the NASA Goddard Space Flight Center (GSFC). During the first year of the above Cooperative Agreement, MIT has developed a new, mature, potentially high- yield process for the manufacturing of microcombs that can be applied to a range of substrates independent of thickness. MIT also developed techniques to extract microcomb accuracy from an assembly truss metrology test stand and to extend the dynamic range of its Shack-Hartmann foil metrology tool. The placement repeatability of foil optics with microcombs in the assembly truss has been improved by a factor of two to approximately 0.15 micron. This was achieved by electric contact determination in favor of determining contact through force measurements. Development work on a stress-free thin foil holder was also supported by this agreement and successfully continued under a different grant.

Schattenburg, Mark L.↗

Process for making silicon from halosilanes and halosilicons

A reactor apparatus (10) adapted for continuously producing molten, solar grade purity elemental silicon by thermal reaction of a suitable precursor gas, such as silane (SiH.sub.4), is disclosed. The reactor apparatus (10) includes an elongated reactor body (32) having graphite or carbon walls which are heated to a temperature exceeding the melting temperature of silicon. The precursor gas enters the reactor body (32) through an efficiently cooled inlet tube assembly (22) and a relatively thin carbon or graphite septum (44). The septum (44), being in contact on one side with the cooled inlet (22) and the heated interior of the reactor (32) on the other side, provides a sharp temperature gradient for the precursor gas entering the reactor (32) and renders the operation of the inlet tube assembly (22) substantially free of clogging. The precursor gas flows in the reactor (32) in a substantially smooth, substantially axial manner. Liquid silicon formed in the initial stages of the thermal reaction reacts with the graphite or carbon walls to provide a silicon carbide coating on the walls. The silicon carbide coated reactor is highly adapted for prolonged use for production of highly pure solar grade silicon. Liquid silicon (20) produced in the reactor apparatus (10) may be used directly in a Czochralski or other crystal shaping equipment.

Levin, Harry↗

Process for making silicon

A reactor apparatus (10) adapted for continuously producing molten, solar grade purity elemental silicon by thermal reaction of a suitable precursor gas, such as silane (SiH.sub.4), is disclosed. The reactor apparatus (10) includes an elongated reactor body (32) having graphite or carbon walls which are heated to a temperature exceeding the melting temperature of silicon. The precursor gas enters the reactor body (32) through an efficiently cooled inlet tube assembly (22) and a relatively thin carbon or graphite septum (44). The septum (44), being in contact on one side with the cooled inlet (22) and the heated interior of the reactor (32) on the other side, provides a sharp temperature gradient for the precursor gas entering the reactor (32) and renders the operation of the inlet tube assembly (22) substantially free of clogging. The precursor gas flows in the reactor (32) in a substantially smooth, substantially axial manner. Liquid silicon formed in the initial stages of the thermal reaction reacts with the graphite or carbon walls to provide a silicon carbide coating on the walls. The silicon carbide coated reactor is highly adapted for prolonged use for production of highly pure solar grade silicon. Liquid silicon (20) produced in the reactor apparatus (10) may be used directly in a Czochralski or other crystal shaping equipment.

Levin, Harry↗

Apparatus for making molten silicon

A reactor apparatus (10) adapted for continuously producing molten, solar grade purity elemental silicon by thermal reaction of a suitable precursor gas, such as silane (SiH.sub.4), is disclosed. The reactor apparatus (10) includes an elongated reactor body (32) having graphite or carbon walls which are heated to a temperature exceeding the melting temperature of silicon. The precursor gas enters the reactor body (32) through an efficiently cooled inlet tube assembly (22) and a relatively thin carbon or graphite septum (44). The septum (44), being in contact on one side with the cooled inlet (22) and the heated interior of the reactor (32) on the other side, provides a sharp temperature gradient for the precursor gas entering the reactor (32) and renders the operation of the inlet tube assembly (22) substantially free of clogging. The precursor gas flows in the reactor (32) in a substantially smooth, substantially axial manner. Liquid silicon formed in the initial stages of the thermal reaction reacts with the graphite or carbon walls to provide a silicon carbide coating on the walls. The silicon carbide coated reactor is highly adapted for prolonged use for production of highly pure solar grade silicon. Liquid silicon (20) produced in the reactor apparatus (10) may be used directly in a Czochralski or other crystal shaping equipment.

Levin, Harry↗

Lubricous Deposit Formed In Situ Between Wearing Surfaces at High Temperatures

Many components of future aircraft will be constructed from novel high-temperature materials, such as superalloys and ceramic composites, to meet expected operating temperatures in excess of 300 C. There are no known liquid lubricants that can lubricate above 300 C without significant decomposition. Solid lubricants could be considered, but problems caused by the higher friction coefficients and wear rates of the solid lubricant film make this an undesirable approach. An alternative method of lubrication is currently being investigated: vapor phase lubrication. In vapor phase lubrication, an organic liquid (in our studies a thioether was used) is vaporized into a flowing air stream that is directed to sliding surfaces where lubrication is needed. The organic vapor reacts at the concentrated contact sliding area generating a lubricous deposit. This deposit has been characterized as a thin polymeric film that can provide effective lubrication at temperatures greater than 400 C. Initial tribological studies were conducted at the NASA Lewis Research Center and Cleveland State University with a high-temperature friction and wear tribometer. A cast iron rod was loaded (a 4-kg mass was used to generate a contact pressure of 1.2 MPa) against a reciprocating, cast iron plate at 500 C. This system was then lubricated with the vapor phase of thioether.

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Organism/Organic Exposure to Orbital Stresses (OOREOS) Satellite: Radiation Exposure in LEO and Supporting Laboratory Studies

We will present the results from the exposure of the metalloporphyrin iron tetraphenylporphyrin chloride (FeTPPCI), anthraufin (C(sub 14)H(sub 8)(O sub 4) (Anth) and Isoviolanthrene (C(sub 34H sub 18) (IVA) to the outher space environment, measured in situ aboard the Organism/Organic Exposure to Orbital Stresses nanosatellite. The compounds were exposed for a period of 17 months (3700 hours of direct solar exposure) including broad-spectrum solar radiation (approx. 122 nm to the near infrared). The organic films are enclosed in hermetically sealed sample cells that contain one of four astrobiologically relevant microenvironments. Transmission spectra (200-1000 nm) were recorded for each film, at first daily and subsequently every 15 days, along with a solar spectrum and the dark response of the detector array. In addition to analysis via UV-Vis spectroscopy, the laboratory controls were also monitored via infrared and far-UV spectroscopy. The results presented will include the finding that the FeTPPCI and IVA organic films in contact with a humid headspace gas (0.8-2.3%) exhibit faster degradation times, upon irradiation, in comparison with identical films under dry headspaces gases, whereas the Anth thin film exhibited a higher degree of photostability. In the companion laboratory experiments, simulated solar exposure of FeTPI films in contact with either Ar or CO(sub -2):O(sub -2):Ar (10:0.01:1000) headspace gas results in growth of a band in the films infrared spectra at 1961 cm(sup 1). Our assignment of this new spectral feature and the corresponding rational will be presented. The relevance of O/OREOS findings to planetary science, biomarker research, and the photostability of organic materials in astrobiologically relevant environments will also be discussed.

Radiation Exposure↗

Engineered Multifunctional Surfaces for Fluid Handling

Designs incorporating variations in capillary geometry and hydrophilic and/or antibacterial surface properties have been developed that are capable of passive gas/liquid separation and passive water flow. These designs can incorporate capillary grooves and/or surfaces arranged to create linear and circumferential capillary geometry at the micro and macro scale, radial fin configurations, micro holes and patterns, and combinations of the above. The antibacterial property of this design inhibits the growth of bacteria or the development of biofilm. The hydrophilic property reduces the water contact angle with a treated substrate such that water spreads into a thin layer atop the treated surface. These antibacterial and hydrophilic properties applied to a thermally conductive surface, combined with capillary geometry, create a novel heat exchanger capable of condensing water from a humid, two-phase water and gas flow onto the treated heat exchanger surfaces, and passively separating the condensed water from the gas flow in a reduced gravity application. The overall process to generate the antibacterial and hydrophilic properties includes multiple steps to generate the two different surface properties, and can be divided into two major steps. Step 1 uses a magnetron-based sputtering technique to implant the silver atoms into the base material. A layer of silver is built up on top of the base material. Completion of this step provides the antibacterial property. Step 2 uses a cold-plasma technique to generate the hydrophilic surface property on top of the silver layer generated in Step 1. Completion of this step provides the hydrophilic property in addition to the antibacterial property. Thermally conductive materials are fabricated and then treated to create the antibacterial and hydrophilic surface properties. The individual parts are assembled to create a condensing heat exchanger with antibacterial and hydrophilic surface properties and capillary geometry, which is capable of passive phase separation in a reduced gravity application. The plasma processes for creating antibacterial and hydrophilic surface properties are suitable for applications where water is present on an exposed surface for an extended time, such that bacteria or biofilms could form, and where there is a need to manage the water on the surface. The processes are also suitable for applications where only the hydrophilic property is needed. In particular, the processes are applicable to condensing heat exchangers (CHXs), which benefit from the antibacterial properties as well as the hydrophilic properties. Water condensing onto the control surfaces of the CHX will provide the moist conditions necessary for the growth of bacteria and the formation of biofilms. The antibacterial properties of the base layer (silver) will mitigate and prevent the growth of bacteria and formation of biofilms that would otherwise reduce the CHX performance. In addition, the hydrophilic properties reduce the water contact angle and prevent water droplets from bridging between control surfaces. Overall, the hydrophilic properties reduce the pressure drop across the CHX.

Thomas, Chris↗

Conductivity of materials made of aluminum nitride and silicon nitride mixtures

To establish the possible mechanism for conductivity in aluminum nitride a study was made of the electric conductivity of pure AlN and its mixtures with silicon nitride at different temperatures and partial pressures of nitrogen in the gas phase. The thermoelectromotive force was also measured. The experiments used polycrystalline samples of cylindrical shape 18 mm in diameter made of powders by hot pressing in graphite press molds at a temperature of 1973-2273 K and pressure 1,470,000 n/sqm. The items obtained by this method had porosity not over 5%. After pressing, the samples were machined to remove carbon from the surface, and were annealed in a stream of dry ammonia for 10 h at a temperature of 1273-1373 K. Electric conductivity was measured according to the bridge scheme on an alternating current of frequency 10 kHz. In order to guarantee close contact of the platinum electrodes with the surface of the samples, a thin layer of platinum was sprayed on them. Experiments were conducted in the temperature interval 1273-1573 K with a half hour delay at each assigned temperature with heating and cooling.

Gorbatov, A. G.↗

Recent advances in thin silicon solar cells

Recent progress in thin (2-4 mils, 50-100 microns) silicon solar cells which extends the capability of the cells into areas of use for possible space missions is reviewed. The production of thin flexible arrays using wrapped-around junction and wrapped-around contact cells is considered. Attention is also given to the formation of cells with very low solar absorptance (alpha-s less than 0.66) through changes in the AR coating, changes in front contact area, and maximizing cell efficiency.

Ho, F.↗