Dimensional instability of aluminum alloys for extreme low temperature cycling applications /GGV material instability problem/
Dimensional instability of aluminum alloys during cryogenic thermal cycling
THERMAL CYCLING↗
SEARCH · Engineering Papers
Results for “temperature extremes”
Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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Improved insulating materials effective at extremely high temperatures
Wrapped molybdenum foil with silica fabric insulation and wrapped tantalum foil with carbon fabric insulation are usable to 1367 K and up to 2478 K, respectively, both offer marked space saving and efficiency in high temperature operations. Graph displays temperature profiles at end of firing period.
Carlson, L. W.↗
Friction and oxidative wear of 440C ball bearing steels under high load and extreme bulk temperatures
Unlubricated sliding friction and wear of 440C steels in an oxygen environment have been studied under a variety of load, speed, and temperature ranging from approximately -185 to 675 deg C. A specially designed test apparatus with a ball-on-flat geometry has been used for this purpose. The observed dependencies of the initial coefficient of friction, the average dynamic coefficient of friction, and the wear rate on load, speed, and test temperatures have been examined from the standpoint of existing theories of friction and wear. High contact temperatures are generated during the sliding friction, causing rapid oxidation and localized surface melting. A combination of fatigue, delamination, and loss of hardness due to tempering of the martensitic structure is responsible for the high wear rate observed and the coefficient of friction.
Chaudhuri, Dilip K.↗
Design and Fabrication of a Dielectric Total Internal Reflecting Solar Concentrator and Associated Flux Extractor for Extreme High Temperature (2500K) Applications
The Analex Corporation, under contract to the NASA Lewis Research Center (LeRC), Cleveland, Ohio, recently evaluated the feasibility of utilizing refractive secondary concentrators for solar heat receivers operating at temperatures up to 2500K. The feasibility study pointed out a number of significant advantages provided by solid single crystal refractive devices over the more conventional hollow reflective compound parabolic concentrators (CPCs). In addition to the advantages of higher concentration ratio and efficiency, the refractive concentrator, when combined with a flux extractor rod, provides for flux tailoring within the heat receiver cavity. This is a highly desirable, almost mandatory, feature for solar thermal propulsion engine designs presently being considered for NASA and Air Force thermal applications. Following the feasibility evaluation, the NASA-LeRC, NASA-Marshall Space Flight Center (MSFC), and Analex Corporation teamed up to design, fabricate, and test a refractive secondary concentrator/flux extractor system for potential use in the NASA-MSFC "Shooting Star" flight experiment. This paper describes the advantages and technical challenges associated with the design methodologies developed and utilized and the material and fabrication limitations encountered.
Soules, Jack A.↗
Feasibility Assessment of Thermal Barrier Seals for Extreme Transient Temperatures
The assembly joints of modem solid rocket motor cases are generally sealed using conventional O-ring type seals. The 5500+ F combustion gases produced by rocket motors are kept a safe distance away from the seals by thick layers of phenolic insulation. Special compounds are used to fill insulation gaps leading up to the seals to prevent a direct flowpath to them. Design criteria require that the seals should not experience torching or charring during operation, or their sealing ability would be compromised. On limited occasions, NASA has observed charring of the primary O-rings of the Space Shuttle solid rocket nozzle assembly joints due to parasitic leakage paths opening up in the gap-fill compounds during rocket operation. NASA is investigating different approaches for preventing torching or charring of the primary O-rings. One approach is to implement a braided rope seal upstream of the primary O-ring to serve as a thermal barrier that prevents the hot gases from impinging on the O-ring seals. This paper presents flow, resiliency, and thermal resistance for several types of NASA rope seals braided out of carbon fibers. Burn tests were performed to determine the time to burn through each of the seals when exposed to the flame of an oxyacetylene torch (5500 F), representative of the 5500 F solid rocket motor combustion temperatures. Rope seals braided out of carbon fibers endured the flame for over six minutes, three times longer than solid rocket motor burn time. Room and high temperature flow tests are presented for the carbon seals for different amounts of linear compression. Room temperature compression tests were performed to assess seal resiliency and unit preloads as a function of compression. The thermal barrier seal was tested in a subscale "char" motor test in which the seal sealed an intentional defect in the gap insulation. Temperature measurements indicated that the seal blocked 2500 F combustion gases on the upstream side with very little temperature rise on the downstream side.
Steinetz, Bruce M.↗
Operation of FPGAs at Extremely Low Temperatures
This paper describes the operation of FPGAs at very low temperatures eg -160(deg)C. Both Actel and Xilinx parts are tested It was found that low temperature operations is not a problem with the parts tested, but there is a problem with powering on an FPGA at cold temperatures.
Field-Programmable Gate Array (FPGA)↗
Development of an Extreme High Temperature n-type Ohmic Contact to Silicon Carbide
We report on the initial demonstration of a tungsten-nickel (75:25 at. %) ohmic contact to silicon carbide (SiC) that performed for up to fifteen hours of heat treatment in argon at 1000 C. The transfer length method (TLM) test structure was used to evaluate the contacts. Samples showed consistent ohmic behavior with specific contact resistance values averaging 5 x 10-4 -cm2. The development of this contact metallization should allow silicon carbide devices to operate more reliably at the present maximum operating temperature of 600 C while potentially extending operations to 1000 C. Introduction Silicon Carbide (SiC) is widely recognized as one of the materials of choice for high temperature, harsh environment sensors and electronics due to its ability to survive and continue normal operation in such environments [1]. Sensors and electronics in SiC have been developed that are capable of operating at temperatures of 600 oC. However operating these devices at the upper reliability temperature threshold increases the potential for early degradation. Therefore, it is important to raise the reliability temperature ceiling higher, which would assure increased device reliability when operated at nominal temperature. There are also instances that require devices to operate and survive for prolonged periods of time above 600 oC [2, 3]. This is specifically needed in the area of hypersonic flight where robust sensors are needed to monitor vehicle performance at temperature greater than 1000 C, as well as for use in the thermomechanical characterization of high temperature materials (e.g. ceramic matrix composites). While SiC alone can withstand these temperatures, a major challenge is to develop reliable electrical contacts to the device itself in order to facilitate signal extraction
Evans, Laura J.↗
Thermal Insulation Performance of Textile Structures for Spacesuit Applications at Martian Pressure and Temperature
Protection of astronauts from the extreme temperatures in the space environment has been provided in the past using multi-layer insulation in ultra-high vacuum environments of low earth orbit and the lunar surface. For planetary environments with residual gas atmospheres such as Mars with ambient pressures between 8 to 14 hPa (8 to 14 mbar), new protection techniques are required because of the dominating effect of the ambient gas on heat loss through the insulation. At Mars ambient pressure levels, the heat loss can be excessive at expected suit external temperatures of 172 K with state-of-the-art suit insulation, requiring an active heat source and its accompanying weight and volume penalties. Micro-fibers have been identified as one potential structure to reduce the heat losses, but existing fundamental data on fiber heat transfer at low pressure is lacking for integrated fabric structures. This baseline study presents insulation performance test data at different pressures and fabric loads for selected polyesters and aramids as a function of fiber density, fiber diameter, fabric density, and fabric construction. A set of trend data of thermal conductivity versus ambient pressure is presented for each fiber and fabric construction design to identify the design effects on thermal conductivity at various ambient pressures, and to select a fiber and fabric design for further development as a suit insulation. The trend data also shows the pressure level at which thermal conductivity approaches a minimum, below which no further improvement is possible for a given fiber and fabric design. The pressure levels and resulting thermal conductivities from the trend data can then be compared to the ambient pressure at a planetary surface, Mars for example, to determine if a particular fiber and fabric design has potential as a suit insulation.
Orndoff, Evelyne↗
Reliability of Solder Materials (Sn-Pb and Pb-Free) for Deep Space Missions
The purpose of this study is to assess the experimental reliability results of miniaturized passive components (01005, 0201, 0402, 0603, 0805, and 1206) assembled using surface mounting processes with tin-lead (Sn-Pb) and lead-free (Pb-Free) solder alloys under extreme temperature deep space environments.
extreme temperatures↗
Chapter Fourteen - Space Photovoltaics for Extreme High-Temperature Missions
Solar arrays in space are subjected to a daunting set of environmental hazards, including extreme temperature cycles, particulate and ultraviolet radiation in space, micrometeoroid damage, and exposure to a flux of atomic oxygen in low-Earth orbit. Over the years since the first solar cells were sent into space on Vanguard 1 in 1958, space solar array technology has advanced to develop photovoltaic materials, cells, and arrays resistant to these degradation mechanisms. This chapter highlights approaches to solar array design for near-Sun missions including thermal management at the systems level, to optimize efficiency at elevated temperature, or the use of novel device design to reduce the incident solar energy to limit operating temperature. Several of these have been successfully demonstrated to enable solar-powered spacecraft to explore the near-Sun planets such as Mercury and Venus as well as the Sun itself.
Space photooltaics↗
Extreme High and Low Temperature Operation of the Silicon-On-Insulator Type CHT-OPA Operational Amplifier
A new operational amplifier chip based on silicon-on-insulator technology was evaluated for potential use in extreme temperature environments. The CHT-OPA device is a low power, precision operational amplifier with rail-to-rail output swing capability, and it is rated for operation between -55 C and +225 C. A unity gain inverting circuit was constructed utilizing the CHT-OPA chip and a few passive components. The circuit was evaluated in the temperature range from -190 C to +200 C in terms of signal gain and phase shift, and supply current. The investigations were carried out to determine suitability of this device for use in space exploration missions and aeronautic applications under wide temperature incursion. Re-restart capability at extreme temperatures, i.e. power switched on while the device was soaked at extreme temperatures, was also investigated. In addition, the effects of thermal cycling under a wide temperature range on the operation of this high performance amplifier were determined. The results from this work indicate that this silicon-on-insulator amplifier chip maintained very good operation between +200 C and -190 C. The limited thermal cycling had no effect on the performance of the amplifier, and it was able to re-start at both -190 C and +200 C. In addition, no physical degradation or packaging damage was introduced due to either extreme temperature exposure or thermal cycling. The good performance demonstrated by this silicon-on-insulator operational amplifier renders it a potential candidate for use in space exploration missions or other environments under extreme temperatures. Additional and more comprehensive characterization is, however, required to establish the reliability and suitability of such devices for long term use in extreme temperature applications.
Patterson, Richard↗
Bridgeport Urban Development: Leveraging NASA Earth Observations and Sociodemographic Data to Assess Urban Heat Vulnerability and Inform Cool Corridors in Bridgeport, Connecticut
Urban environments face hotter temperatures than suburban and rural areas due to higher concentrations of impervious surfaces, heat-retaining buildings, and lack of green space. Bridgeport, Connecticut, which was formerly a national manufacturing hub, is now the densest and most populous city in the state. Bridgeport experiences hotter temperatures, exposing its residents to more extreme temperatures than the surrounding affluent suburbs. Extreme heat affects the health of those exposed to it and intensifies energy demands. Understanding temperature differences is the first step in effectively directing mitigation efforts. Our partner, Groundwork Bridgeport, along with the Yale Urban Design Workshop, are planning a “cool corridors” project, implementing cooling infrastructure to combat urban heat. We used Landsat 8 Thermal Infrared Sensor and Landsat 9 Thermal Infrared Sensor-2 data to conduct a Land Surface Temperature analysis in Google Earth Engine for the county of Fairfield. A Principal Component Analysis was performed to identify indicators of social vulnerability in Bridgeport. We used the SOlar and LongWave Environmental Irradiance Geometry model to identify felt heat on the block level to inform where the partner should locate their cooling interventions to ensure they are most effective and equitable. We focused on the East Side of Bridgeport, which we found was 10 degrees hotter than other areas of Bridgeport and the neighboring town of Fairfield. We integrated our findings using Earth observations and additional sociodemographic and climate data into final communication products for our partners which will facilitate their selection of candidate locations for their Cool Corridors project.
Silas Kirsch↗
The Impacts of Rising Temperatures on Aircraft Takeoff Performance
Steadily rising mean and extreme temperatures as a result of climate change will likely impact the air transportation system over the coming decades. As air temperatures rise at constant pressure, air density declines, resulting in less lift generation by an aircraft wing at a given airspeed and potentially imposing a weight restriction on departing aircraft. This study presents a general model to project future weight restrictions across a fleet of aircraft with different takeoff weights operating at a variety of airports. We construct performance models for five common commercial aircraft and 19 major airports around the world and use projections of daily temperatures from the CMIP5 model suite under the RCP 4.5 and RCP 8.5 emissions scenarios to calculate required hourly weight restriction. We find that on average, 10 - 30% of annual flights departing at the time of daily maximum temperature may require some weight restriction below their maximum takeoff weights, with mean restrictions ranging from 0.5 to 4% of total aircraft payload and fuel capacity by mid- to late century. Both mid-sized and large aircraft are affected, and airports with short runways and high temperatures, or those at high elevations, will see the largest impacts. Our results suggest that weight restriction may impose a non-trivial cost on airlines and impact aviation operations around the world and that adaptation may be required in aircraft design, airline schedules, and/or runway lengths.
air transportation system↗
Room-temperature continuous operation of InAsSb quantum-dot lasers near 2 mu m based on (100) InP substrate
Single-stack InAsSb self-assembled quantum-dot lasers based on (001) InP substrate have been grown by metalorganic vapor-phase epitaxy. The narrow ridge waveguide lasers lased at wavelengths near 2 mu m up to 25 degrees C in continuous-wave operation. At room temperature, a differential quantum efficiency of 13 percent is obtained and the maximum output optical power reaches 3 mW per facet with a threshold current density of 730 A/cm(sup 2). With increasing temperature the emission wavelength is extremely temperature stable, and a very low wavelength temperature sensitivity of 0.05 nm/degrees C is measured, which is even lower than that caused by the refractive index change.
Semiconductor lasers quantum dots↗
High Temperature Joining and Characterization of Joint Properties in Silicon Carbide-Based Composite Materials
Advanced silicon carbide-based ceramics and composites are being developed for a wide variety of high temperature extreme environment applications. Robust high temperature joining and integration technologies are enabling for the fabrication and manufacturing of large and complex shaped components. The development of a new joining approach called SET (Single-step Elevated Temperature) joining will be described along with the overview of previously developed joining approaches including high temperature brazing, ARCJoinT (Affordable, Robust Ceramic Joining Technology), diffusion bonding, and REABOND (Refractory Eutectic Assisted Bonding). Unlike other approaches, SET joining does not have any lower temperature phases and will therefore have a use temperature above 1315C. Optimization of the composition for full conversion to silicon carbide will be discussed. The goal is to find a composition with no remaining carbon or free silicon. Green tape interlayers were developed for joining. Microstructural analysis and preliminary mechanical tests of the joints will be presented.
Joining↗
Experimental Durability Testing of 4H SiC JFET Integrated Circuit Technology at 727 C
We have reported SiC integrated circuits (IC's) with two levels of metal interconnect that have demonstrated prolonged operation for thousands of hours at their intended peak ambient operational temperature of 500 C [1, 2]. However, it is recognized that testing of semiconductor microelectronics at temperatures above their designed operating envelope is vital to qualification. Towards this end, we previously reported operation of a 4H-SiC JFET IC ring oscillator on an initial fast thermal ramp test through 727 C [3]. However, this thermal ramp was not ended until a peak temperature of 880 C (well beyond failure) was attained. Further experiments are necessary to better understand failure mechanisms and upper temperature limit of this extreme-temperature capable 4H-SiC IC technology. Here we report on additional experimental testing of custom-packaged 4H-SiC JFET IC devices at temperatures above 500 C. In one test, the temperature was ramped and then held at 727 C, and the devices were periodically measured until electrical failure was observed. A 4H-SiC JFET on this chip electrically functioned with little change for around 25 hours at 727 C before rapid increases in device resistance caused failure. In a second test, devices from our next generation 4H-SiC JFET ICs were ramped up and then held at 700 C (which is below the maximum deposition temperature of the dielectrics). Three ring oscillators functioned for 8 hours at this temperature before degradation. In a third experiment, an alternative die attach of gold paste and package lid was used, and logic circuit operation was demonstrated for 143.5 hours at 700 C.
JFET↗
Experimental Durability Testing of 4H SiC JFET Integrated Circuit Technology at 727 Degrees Centigrade
We have reported SiC integrated circuits (ICs) with two levels of metal interconnect that have demonstrated prolonged operation for thousands of hours at their intended peak ambient operational temperature of 500 degrees Centigrade. However, it is recognized that testing of semiconductor microelectronics at temperatures above their designed operating envelope is vital to qualification. Towards this end, we previously reported operation of a 4H-SiC JFET IC ring oscillator on an initial fast thermal ramp test through 727 degrees Centigrade. However, this thermal ramp was not ended until a peak temperature of 880 degrees Centigrade (well beyond failure) was attained. Further experiments are necessary to better understand failure mechanisms and upper temperature limit of this extreme-temperature capable 4H-SiC IC technology.Here we report on additional experimental testing of custom-packaged 4H-SiC JFET IC devices at temperatures above 500 degrees Centigrade. In one test, the temperature was ramped and then held at 727 degrees Centigrade, and the devices were periodically measured until electrical failure was observed. A 4H-SiC JFET on this chip electrically functioned with little change for around 25 hours at 727 degrees Centigrade before rapid increases in device resistance caused failure. In a second test, devices from our next generation 4H-SiC JFET ICs were ramped up and then held at 700 degrees Centigrade (which is below the maximum deposition temperature of the dielectrics). Three ring oscillators functioned for 8 hours at this temperature before degradation. In a third experiment, an alternative die attach of gold paste and package lid was used, and logic circuit operation was demonstrated for 143.5 hours at 700 degrees Centigrade.
Silicon Carbide↗
Temperature-Adaptive Circuits on Reconfigurable Analog Arrays
Demonstration of a self-reconfigurable Integrated Circuit (IC) that would operate under extreme temperature (-180 C and 120 C) and radiation (300krad), without the protection of thermal controls and radiation shields. Self-Reconfigurable Electronics platform: a) Evolutionary Processor (EP) to run reconfiguration mechanism; b) Reconfigurable chip (FPGA, FPAA, etc).
self-recovery↗