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At least 163 records · Page 9

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DOE OSTI2023

Hydrogen Sulfide Passivation for p-Type Passivated Emitter and Rear Contact Solar Cells

This work reports on the application of sulfur (S)-passivation to passivated emitter and rear contact (PERC) solar cells. The emitter surface was passivated by hydrogen sulfide (H 2 S) gas phase reaction and capped by a hydrogenated amorphous silicon nitride (a-SiN x :H) layer. The sulfur passivation on a symmetrically n + diffused emitter is shown to lead to an emitter saturation current density (J 0n+ ) of 30 fA/cm 2 at R sheet,n+ ≈ 100 Ω/sq. The application of S-passivation to the emitter surface in the PERC cell structure, with the rear surface passivated by an aluminum oxide (Al 2 O 3 )/a-SiN x :H stack, showed a promising implied open-circuit voltage (iV OC ) of 686 mV before metallization. This iV OC was higher than that for the a-SiN x :H or SiO 2 /a-SiN x :H passivated emitter surfaces (675 and 674 mV, respectively) on PERC cells processed in the same run. However, a significant drop in cell V OC is observed for the S-passivated PERC cell after the completion of device fabrication with laser patterning, screen-printed metal contact deposition, and firing. Nonetheless, an efficiency of ~20% and a V OC of ~650 mV was achieved with an emitter surface passivated by sulfur. We identified that the 760°C contact firing process degrades the S-passivation quality. Furthermore, the surface morphology was studied, and a detailed surface analysis was performed to study the causes of the S-passivated surface degradation.

14 SOLAR ENERGY↗

NASA NTRS1981

Encounter with Saturn - Voyager 1 imaging science results

As Voyager 1 flew through the Saturn system it returned photographs revealing many new and surprising characteristics of this complicated community of bodies. Saturn's atmosphere has numerous, low-contrast, discrete cloud features and a pattern of circulation significantly different from that of Jupiter. Titan is shrouded in a haze layer that varies in thickness and appearance. Among the icy satellites there is considerable variety in density, albedo, and surface morphology and substantial evidence for endogenic surface modification. Trends in density and crater characteristics are quite unlike those of the Galilean satellites. Small inner satellites, three of which were discovered in Voyager images, interact gravitationally with one another and with the ring particles in ways not observed elsewhere in the solar system. Saturn's broad A, B, and C rings contain hundreds of 'ringlets', and in the densest portion of the B ring there are numerous nonaxisymmetric features. The narrow F ring has three components which, in at least one instance, are kinked and crisscrossed. Two rings are observed beyond the F ring, and material is seen between the C ring and the planet.

Smith, B. A.↗

NASA NTRS2006

Solar Effects on Tensile and Optical Properties of Hubble Space Telescope Silver-Teflon(Registered Trademark) Insulation

A section of the retrieved Hubble Space Telescope (HST) solar array drive arm (SADA) multilayer insulation (MLI), which experienced 8.25 years of space exposure, was analyzed for environmental durability of the top layer of silver-Teflon (DuPont) fluorinated ethylene propylene (Ag-FEP). Because the SADA MLI had solar and anti-solar facing surfaces and was exposed to the space environment for a long duration, it provided a unique opportunity to study solar effects on the environmental degradation of Ag-FEP, a commonly used spacecraft thermal control material. Data obtained included tensile properties, solar absorptance, surface morphology and chemistry. The solar facing surface was found to be extremely embrittled and contained numerous through-thickness cracks. Tensile testing indicated that the solar facing surface lost 60% of its mechanical strength and 90% of its elasticity while the anti-solar facing surface had ductility similar to pristine FEP. The solar absorptance of both the solar facing surface (0.155 plus or minus 0.032) and the anti-solar facing surface (0.208 plus or minus 0.012) were found to be greater than pristine Ag-FEP (0.074). Solar facing and anti-solar facing surfaces were microscopically textured, and locations of isolated contamination were present on the anti-solar surface resulting in increased localized texturing. Yet, the overall texture was significantly more pronounced on the solar facing surface indicating a synergistic effect of combined solar exposure and increased heating with atomic oxygen erosion. The results indicate a very strong dependence of degradation, particularly embrittlement, upon solar exposure with orbital thermal cycling having a significant effect.

deGroh, Kim, K.↗

DOE OSTI2020

Effects of surface undulations on asymmetric X-ray diffraction: a rocking-curve topography study

The results are reported of an X-ray diffraction study of an Si crystal designed and fabricated for very asymmetric diffraction from the 333 reflection for X-ray energies of 8.100 and 8.200 keV. A crystal with an asymmetry angle of 46 ± 0.1° between the surface and the (111) planes was studied. The grazing angles of incidence were near 1.08 and 0.33° for these two energies, respectively. Features arising from surface undulations were not observed at 8.100 keV, but were observed at 8.200 keV. The results at 8.100 keV allow an alternative explanation based on strain near the surface to be ruled out. Topographic images were obtained as a function of rocking angle, and in the case of 8.200 keV the surface morphology is evident. Finally, the results are found to be in agreement with dynamical X-ray diffraction calculations made with the Takagi–Taupin equations specialized to a surface having convex or concave features, as reported in the accompanying paper [Macrander (2020). J. Appl. Cryst. 53 , 793–799].

36 MATERIALS SCIENCE↗

DOE OSTI2023

Mechanisms of dissolution from gibbsite step edges elucidated by ab initio molecular dynamics with enhanced sampling

Surface reactions underpin our collective understanding of mineral dissolution. This impacts a range of predictive geochemical models (for weathering, the fate and transport of metals) as well as industrial utilization of minerals. Yet atomistic details are rarely known due to the complex mineral/fluid interfacial environment. There is significant need to understand the mechanistic details of dissolution reactions and how they depend on surface morphology and solution conditions. This work utilizes surface pit models in conjunction with changes to solution composition that mimic pH to explore surface detachment of aluminate from gibbsite, which is a primary source of Al in soils and within the industrial processing of aluminum. Ab initio molecular dynamics simulations with enhanced sampling has been used to explore the detailed process of the detachment, the results of which indicate two potential pathways that are differentiated based upon the extent of water hydration. Here, the heights of the energy barriers depend upon the local morphology which influence the number of bridges (quasi-)simultaneously broken (1 or 2) or the Al-O coordination of the neighboring aluminum atoms (5 or 6) at the armchair edge. pH effects are significant, with a nearly 50% reduction in barrier height under alkaline conditions that are relevant to geothermal fluids and Al extraction from minerals.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

DOE OSTI2023

A Comparison of Emerging and Industry Benchmark Photovoltaic Backsheets Between Different Outdoor Locations

Recent interest within the photovoltaic (PV) module industry is largely directed toward enhanced lifetimes in the field, balanced with improved recyclability. Traditionally, fluoropolymer-based backsheets have been used, however, are difficult to recycle. Emerging polyolefin (PO)-based backsheets are more recyclable and can be formulated to be robust. Properties of different fluoropolymer- and non-fluoropolymer-based backsheet coupons and in encapsulated silicon mini modules that have been fielded in Albuquerque, NM and Cocoa, FL are reported here. Seven backsheets were examined: two novel PO's, TPT, APO, PPE, AAA, and KPf. Methods of examination include module electrical performance (I - V flash test), surface morphology (optical microscope and gloss), polymer chemical structure (FTIR), EL imaging, mechanical tensile testing, DC breakdown voltage, DSC (phase transitions), and optical performance (reflectance spectra).

industries↗

DOE OSTI2023

Epitaxial growth and characterization of magnesium gallate (MgGa 2 O 4 ) thin films by pulsed laser deposition

To advance high power device application of MgGa 2 O 4 , it is imperative to achieve crystalline epitaxial thin films and to observe its materials’ characteristics within a wide range of growth conditions. However, there is no published work on the growth of this promising ultrawide bandgap material till this day. In this study, we report the crystalline growth of MgGa 2 O 4 thin films on c-plane (006) sapphire substrates using the pulsed laser deposition (PLD) technique in a broad range of temperature and oxygen pressure. The temperature range for this crystalline growth was within the temperature range of 300°C to 700°C and a pressure range of 1x10 -1 to 1x10 -3 Torr. Within this parameter range, the structural, chemical, optical, and surface property of MgGa 2 O 4 thin films have been investigated. Specifically, the acquired XRD patterns confirmed the film growth along the [111] preferential crystal orientation in the lattice. Here, the rocking curve measurement of the prominent (222) plane showed an increasing trend of the crystallinity with growth temperature and pressure. Furthermore, the XRD phi (φ) scan demonstrated the six-fold rotational symmetry of the MgGa 2 O 4 films and the epitaxial relationship of 30° between the film and the sapphire substrate. The XPS spectra confirmed the presence of +2 and +3 oxidation state for Mg and Ga respectively, in the films. The direct bandgap of MgGa 2 O 4 films was obtained ~5.27±0.03 eV by analyzing the UV-Vis absorbance spectra using the Tauc equation. The SEM images exhibited a granular surface morphology of the MgGa 2 O 4 films with an increasing trend in the grain size from low to high temperature and pressure. The refractive index and thickness of these films were in the range of ~1.90±0.02 and ~70±2.0 nm, respectively determined by fitting the spectroscopic ellipsometry data.

36 MATERIALS SCIENCE↗

NASA NTRS1976

Potential biomedical applications of ion beam technology

Electron bombardment ion thrusters used as ion sources have demonstrated a unique capability to vary the surface morphology of surgical implant materials. The microscopically rough surface texture produced by ion beam sputtering of these materials may result in improvements in the biological response and/or performance of implanted devices. Control of surface roughness may result in improved attachment of the implant to soft tissue, hard tissue, bone cement, or components deposited from blood. Potential biomedical applications of ion beam texturing discussed include: vascular prostheses, artificial heart pump diaphragms, pacemaker fixation, percutaneous connectors, orthopedic pros-thesis fixtion, and dental implants.

Banks, B. A.↗

NASA NTRS1976

Potential biomedical applications of ion beam technology

Banks, B. A.↗

NASA NTRS1998

Integrated Studies of Impact-Basin Ejecta as Probes of the Lunar Crust: Imbrium and Serenitatis

The large, late, basin impacts on the Earth side of the Moon fundamentally reshaped the structure of the crust, its surface morphology, and the composition of the megaregolith and surface soils. The latest (except for Orientale on the western limb) and largest was the Imbrium impact, which produced massive ejecta deposits over much of the Procellarum region and beyond, and ejected material that mixed with surface regolith nearly Moonwide. The basins serve as natural probes into the lunar crust; therefore, understanding the nature and composition of ejecta produced by them provides information about the crust at depth. Gravity data allow modeling of the structure of the crust beneath the basins, and from such models one can infer depths of excavation and the nature of crustal response following impact.

Jolliff, Brad L.↗

NASA NTRS2001

Workshop on Science and the Human Exploration of Mars

The exploration of Mars will be a multi-decadal activity. Currently, a scientific program is underway, sponsored by NASA's Office of Space Science in the United States, in collaboration with international partners France, Italy, and the European Space Agency. Plans exist for the continuation of this robotic program through the first automated return of Martian samples in 2014. Mars is also a prime long-term objective for human exploration, and within NASA, efforts are being made to provide the best integration of the robotic program and future human exploration missions. From the perspective of human exploration missions, it is important to understand the scientific objectives of human missions, in order to design the appropriate systems, tools, and operational capabilities to maximize science on those missions. In addition, data from the robotic missions can provide critical environmental data - surface morphology, materials composition, evaluations of potential toxicity of surface materials, radiation, electrical and other physical properties of the Martian environment, and assessments of the probability that humans would encounter Martian life forms. Understanding of the data needs can lead to the definition of experiments that can be done in the near-term that will make the design of human missions more effective. This workshop was convened to begin a dialog between the scientific community that is central to the robotic exploration mission program and a set of experts in systems and technologies that are critical to human exploration missions. The charge to the workshop was to develop an understanding of the types of scientific exploration that would be best suited to the human exploration missions and the capabilities and limitations of human explorers in undertaking science on those missions.

Duke, M. B.↗

DOE OSTI2024

Laterally Modulating Carrier Concentration by Ion Irradiation in CdO Thin Films for Mid‐IR Plasmonics

This report demonstrates tunable carrier densities in CdO thin films through local ion irradiation, providing lateral control of mid‐IR optical properties. Ion‐solid interactions produce donor‐like defects that boost electron concentrations from the practical minimum of 2.5 × 10 19 cm −3 to a maximum of 2.5 × 10 20 cm −3 by metered ion exposure. This range is achieved using He, N, Ar, or Au ions at 1–2.8 MeV; when normalized by displacements per atom, all ion species produce comparable results. Since CdO is well‐described by the Drude model, irradiation‐tuned carrier densities directly alter the infrared dielectric function, and in turn, mid‐infrared optical properties. Further, it is demonstrated that by combining irradiation with traditional lithography, CdO films expose to ions in the presence of 3‐µm thick, patterned photoresist exhibit lateral carrier density profiles with ≈400‐nm resolution. Scanning near‐field optical microscopy reveals sharp optical interfaces with almost no companion contrast in surface morphology, microstructure, or crystallinity. Finally, CdO lateral homostructures supporting surface plasmon polaritons (SPPs) are demonstrated whose dispersion relation can be tuned through periodic patterning in a monolithic platform by simple nanofabrication. Numerical simulations show these polaritons result from strong coupling between excitations at CdO plasma frequencies and SPPs supported by the platinum substrate.

cadmium oxide↗

DOE OSTI2026

Temperature-Dependent Sn Incorporation and Defect Formation in Pseudomorphic SiSn Layers on Si (001) via Molecular Beam Epitaxy

SiSn alloys have attracted growing interest for group-IV bandgap engineering, although their epitaxial growth remains challenging due to the extremely low equilibrium solubility of Sn in Si. In this work, fully strained (pseudomorphic) SiSn epitaxial layers were grown on Si (001) substrates by means of molecular beam epitaxy. A systematic investigation reveals a strong inverse correlation between growth temperature and Sn incorporation efficiency. Despite a constant Sn flux, the incorporated Sn composition decreases from 5.5% to 3.2% as the growth temperature increases, indicating a pronounced temperature dependence of Sn incorporation. Reflection high-energy electron diffraction indicates a gradual transition of the growth from two-dimensional to three-dimensional with increasing film thickness. Structural characterization by means of X-ray diffraction, atomic force microscopy, and transmission electron microscopy confirms the pseudomorphic growth and smooth surface morphology and reveals twins and stacking faults near the surface region. These results establish a quantitative reference for SiSn growth kinetics and provide guidance for future studies of SiSn and SiGeSn alloys in silicon-compatible electronic and optoelectronic applications.

SiSn alloys↗

NASA NTRS1993

Ion-Implanted Diamond Films and Their Tribological Properties

This paper reports the physical characterization and tribological evaluation of ion-implanted diamond films. Diamond films were produced by microwave plasma, chemical vapor deposition technique. Diamond films with various grain sizes (0.3 and 3 microns) and roughness (9.1 and 92.1 nm r.m.s. respectively) were implanted with C(+) (m/e = 12) at an ion energy of 160 eV and a fluence of 6.72 x 10(exp 17) ions/sq cm. Unidirectional sliding friction experiments were conducted in ultrahigh vacuum (6.6 x 10(exp -7)Pa), dry nitrogen and humid air (40% RH) environments. The effects of C(+) ion bombardment on fine and coarse-grained diamond films are as follows: the surface morphology of the diamond films did not change; the surface roughness increased (16.3 and 135.3 nm r.m.s.); the diamond structures were damaged and formed a thin layer of amorphous non-diamond carbon; the friction coefficients dramatically decreased in the ultrahigh vacuum (0.1 and 0.4); the friction coefficients decreased slightly in the dry nitrogen and humid air environments.

Wu, Richard L. C.↗

NASA NTRS1993

Visible Imaging on the Pluto Fast Flyby Mission

Objectives for visible imaging of the Pluto-Charon system, as prescribed by the Outer Planets Science Working Group, are to acquire (1) global observations (FOV of approximately 5000 IFOV's) at 1 km/line-pair for the purpose of characterizing surface morphology and geology, (2) global observations in 3-5 broadband colors at 5-10 km/line-pair for studies of surface properties and composition as it relates to morphology, and (3) selected observations at higher spatial resolution for study of surface processes. Several factors of the Pluto Fast Flyby mission make these difficult to achieve. These factors along with other aspects of the mission are discussed.

Malin, M. C.↗

DOE OSTI2022

Pit rim decomposition into multiple quantum dots on surfaces of epitaxial thin films grown on pit-patterned substrates

Here, we report results of dynamical simulations according to an experimentally validated surface morphological evolution model on the formation of regular arrays of quantum dot molecules (QDMs) consisting of 1D arrays of smaller interacting quantum dots (QDs). These QD arrays form along the sides of each pit rim on the surface of a coherently strained thin film epitaxially deposited on a semiconductor substrate, the surface of which consists of a periodic pattern of inverted prismatic pits with rectangular pit openings. We find that this complex QDM pattern results from the decomposition of the pit rim from a “quantum fortress” with four elongated QDs into four 1D arrays of multiple smaller QDs arranged along each side of the pit rim. Systematic parametric analysis indicates that varying the pit opening dimensions and the pit wall inclination directly impacts the number of QDs in the resulting QDM pattern, while varying the pit depth only affects the dimensions of the QDs in the nanostructure pattern. Therefore, the number, arrangement, and sizes of QDs in the resulting pattern of QDMs on the film surface can be engineered precisely by proper tuning of the pit design parameters. Our simulation results are supported by predictions of morphological stability analysis, which explains the pit rim decomposition into multiple QDs as the outcome of a tip-splitting instability and provides a fundamental characterization of the post-instability nanostructure pattern. Our theoretical findings can play a vital role in designing optimal semiconductor surface patterns toward enabling future nanofabrication technologies.

36 MATERIALS SCIENCE↗

DOE OSTI2025

Control over Banded Morphologies and Circular Dichroism in Chiral Halide Perovskites

Chiral halide perovskites (c-HPs) merge the chirality of organic cations with the semiconducting properties of metal halide frameworks, creating a family of chiral semiconductors with tunable chiroptoelectronic behavior. Here, we describe the impact of periodic banded morphologies of textured c-HP ( R/S -NEA) 2 PbBr 4 films (NEA = 1- (1-naphthyl)ethylammonium) on their chiroptical behavior. Due to the interplay between the crystalline and glassy phases, the c-HP film growth is driven by rhythmic precipitation, producing a distinctive controllable radial banded pattern with the ( R/S -NEA) 2 PbBr 4 inorganic planes oriented parallel to the substrate. The banded morphology can be controlled, as evidenced by the growth temperature dictating the ridge-to-ridge spacing as well as the density of banded regions. The resulting circular dichroism (CD) spectral shape, intensity, and polarity vary in a seemingly random manner across processing conditions. However, these spectral features can be explained by considering key features of the banded morphology, such as refraction of the incident light due to surface morphology, birefringence, and stacked, rotated crystallites. These effects cannot be canceled by averaging front and back CD spectra of c-HP films, and our model incorporating these effects reproduces all observed CD spectra remarkably well. The control over the c-HP morphology and prediction capabilities of our CD modeling leads to further understanding of this class of semiconductors and the possibility of exploiting structural features for light polarization control akin to enhanced metamaterials.

14 SOLAR ENERGY↗

DOE OSTI2026

Strain-Driven Evolution of Structural and Carrier Recombination Dynamics in Germanium

Strain engineering in group-IV semiconductors, in particular germanium (Ge), offers a promising route for advancing next-generation optoelectronic device performance. High minority carrier lifetime serves as a direct indicator of superior material quality and device efficiency. Several factors govern the minority carrier lifetime in both strained Ge and strained GeSn, such as strain level, epilayer thickness, defects, surface roughness, and Sn alloying. In this study, the impact of biaxial strain on effective minority carrier lifetimes of tensile-strained Ge (0% ..epsilon..-Ge/Al?As, 0.78% ..epsilon..-Ge/In0.115?Ga0.885?As, and 0.93% ..epsilon..-Ge/In0.16?Ga0.84?As) and compressively strained GeSn (-0.53% c-Ge0.97?Sn0.03/Al?As) epilayers, grown by molecular beam epitaxy, was experimentally investigated via the microwave-reflection photoconductive decay (..mu..-PCD) technique as a simultaneous function of thickness and strain. The structural and strain-relaxation properties were analyzed by high-resolution x-ray diffraction and Raman spectroscopy, while surface morphology analysis using atomic force microscopy provided insights into the surface roughness of strained Ge-based epilayers. Defect characterization by cross-section transmission electron microscopy revealed superior crystalline quality of ..epsilon..-Ge in one epilayer, while twin boundary formation was observed in the other. We investigated the carrier recombination dynamics in epitaxially strained Ge by extracting the bulk recombination lifetime and surface recombination velocity using the thickness-dependent minority carrier lifetime. High effective minority carrier lifetimes of approximately 60-340 ns were achieved at high strain levels with minimal dependence on the thickness of the strained Ge-based epilayers by means of the ..mu..-PCD technique. Minority carrier lifetimes in Ge-based epilayers exhibit a quadratic dependence on the biaxial strain, ranging from -0.88% (compressive) to +1.6% (tensile). The analysis of the carrier recombination dynamics in strained Ge-based heterostructures offers a pathway to designing group-IV based optoelectronic devices.

36 MATERIALS SCIENCE↗