Spontaneous mesostructure formation produces optically transmissive Ni–P films that are catalytically active for the photoelectrochemical hydrogen evolution reaction
Ni–P films that are catalytically active for the hydrogen-evolution reaction were electrodeposited onto photoactive Si substrates between 20 °C and 80 °C from an aqueous solution. Ni–P films deposited at 20 °C and exposed to acidic environments spontaneously developed deep cracks. A substantial increase in optical transmission to the semiconducting substrate resulted without affecting the catalytic performance of the film. In contrast, Ni–P films deposited at 80 °C only developed minor surface-level cracks and did not exhibit a substantial increase in optical transmission. During electrodeposition of the Ni–P films at low temperatures, the uptake of parasitically evolved hydrogen generated partially defective Ni–P, causing crack formation. Increases in the temperature of the electrodeposition bath increased the faradaic efficiency of Ni–P deposition and consequently reduced the uptake of parasitically generated hydrogen. The defective Ni–P films were converted to a crack-resistant material by thermally desorbing the excess hydrogen that was absorbed during the low-temperature electrodeposition process.