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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 163 records · Page 9
All sourcesNASA NTRSDOE OSTI
DOE OSTI2022

Selective control of conductance modes in multi-terminal Josephson junctions

The Andreev bound state spectra of multi-terminal Josephson junctions form an artificial band structure, which is predicted to host tunable topological phases under certain conditions. However, the number of conductance modes between the terminals of a multi-terminal Josephson junction must be few in order for this spectrum to be experimentally accessible. In this work, we employ a quantum point contact geometry in three-terminal Josephson devices to demonstrate independent control of conductance modes between each pair of terminals and access to the single-mode regime coexistent with the presence of superconducting coupling. These results establish a full platform on which to realize tunable Andreev bound state spectra in multi-terminal Josephson junctions.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Short-Depth QAOA circuits and Quantum Annealing on Higher-Order Ising Models (Rev.2)

The Quantum Alternating Operator Ansatz (QAOA) and Quantum Annealing (QA) are quantum algorithms that are both based on the adiabatic theorem and both have the goal of sampling the optimal solution(s) of combinatorial optimization problems. Quantum annealing has been physically instantiated on D-Wave devices using superconducting flux qubits, and QAOA can be programmed on digital gate-model quantum computers such as the programmable superconducting transmon qubits devices of the IBMQ series, for instance ibm washington. QAOA and QA address the same types of problems, but it is unclear how they will scale to large problem sizes and to larger and higher-fidelity quantum computers. In this article, we present a direct comparison between QAOA, one and two rounds, run on all 127 qubits of ibm washington and QA run on D-Wave Advantage system4.1 and Advantage system6.1. The problems which allow for this comparison are random Ising model problems whose connectivity matches the heavy hexagonal lattice topology of ibm washington and the Pegasus graph connectivity of the two D-Wave devices. We create two classes of problem instances for this comparison: one with higher order terms (ZZZ variable interactions), linear terms, and quadratic terms, and a separate problem type with only linear and quadratic terms. Our QAOA circuits are novel and extremely short depth, with a CNOT depth of 6 per round, which allows whole chip usage of ibm washington’s heavy hexagonal lattice and can be applied to future heavy-hex chips. We also test the effectiveness of the error suppression technique digital dynamical decoupling on the QAOA circuits. The QAOA circuits compiled to ibm washington are composed of several thousand circuit instructions, approximately 3, 000 depending on the details of the circuit, making these some the largest quantum circuits ever executed on a digital quantum processor. QAOA and QA are compared against the classical heuristic algorithm of simulated annealing and all problem instances are exactly solved using CPLEX in order to evaluate which samplers, if any, correctly found the ground state solution(s) of the problem instances. We find that (i) QA outperforms QAOA on all problem instances, (ii) QAOA samples the problems better than random sampling, and (iii) QAOA angle computation exhibits clear parameter concentration across the ensemble of Ising models.

127 Qubits↗
NASA NTRS1991

High-temperature superconducting superconductor/normal metal/superconducting devices

We describe the fabrication and characterization of superconductor/normal metal/superconductor (SNS) devices made with the high-temperature superconductor (HTS) YBa2Cu3O(7-x). Structures of YBa2Cu3O(7-x)/Au/Nb on c-axis-oriented YBa2Cu3O(7-x) were made in both sandwich and edge geometries in order to sample the HTS material both along and perpendicular to the conducting a-b planes. These devices display fairly ideal Josephson properties at 4.2 K. In addition, devices consisting of YBa2Cu3O(7-x)/YBa2Cu3O(y)/YBa2Cu3O(7-x), with a 'normal metal' layer of reduced transition temperature YBa2Cu3O(7-x) were fabricated and show a great deal of promise for applications near 77 K. Current-voltage characteristics like those of the Resistively-Shunted Junction model are observed, with strong response to 10 GHz radiation above 60 K.

Foote, M. C.↗
DOE OSTI2026

Sapphire Substrate Trenching to Advance Superconducting High-Coherence Quantum Devices

Achieving longer coherence times in superconducting qubits is essential for advancing quantum information processing and enabling scalable quantum computing. This work presents an innovative fabrication strategy focused on sapphire trenching of the substrate of superconducting high-coherence quantum devices, developed by the SQMS Nanofabrication Taskforce in collaboration with the materials characterization team. In this talk, we present a method to efficiently and consistently trench into the sapphire substrate, without compromising the surface roughness or profile of the etched sapphire. In the literature, trenching in the substrate has been shown to decrease losses, unwanted coupling and thermal stress. Sapphire’s strong covalent bonds make it harder to etch compared to silicon, yet it is more favorable for high-coherence quantum devices due to its lower dielectric losses. This innovative technique opens new possibilities for superconducting qubit fabrication: we fabricated high coherence qubit chips on sapphire substrates with trenching, to demonstrate that it will help pushing towards higher coherence times. By integrating this work with ongoing junction process optimization, design innovation, materials characterization and exploration, we outline a clear pathway toward transmon coherence times reaching millisecond scales and beyond.

Garattoni, S. [Fermilab]↗
DOE OSTI2026

Sapphire Substrate Trenching to Advance Superconducting High-Coherence Quantum Devices

Achieving longer coherence times in superconducting qubits is essential for advancing quantum information processing and enabling scalable quantum computing. This work presents an innovative fabrication strategy focused on sapphire trenching of the substrate of superconducting high-coherence quantum devices, developed by the SQMS Nanofabrication Taskforce in collaboration with the materials characterization team. In this talk, we present a method to efficiently and consistently trench into the sapphire substrate, without compromising the surface roughness or profile of the etched sapphire. In the literature, trenching in the substrate has been shown to decrease losses, unwanted coupling and thermal stress. Sapphire’s strong covalent bonds make it harder to etch compared to silicon, yet it is more favorable for high-coherence quantum devices due to its lower dielectric losses. This innovative technique opens new possibilities for superconducting qubit fabrication: we fabricated high coherence qubit chips on sapphire substrates with trenching, to demonstrate that it will help pushing towards higher coherence times. By integrating this work with ongoing junction process optimization, design innovation, materials characterization and exploration, we outline a clear pathway toward transmon coherence times reaching millisecond scales and beyond.

Garattoni, S. [Fermilab]↗
DOE OSTI2025

Low two-level-system noise in hydrogenated amorphous silicon

At sub-Kelvin temperatures, two-level systems (TLSs) present in amorphous dielectrics source a permittivity noise, degrading the performance of a wide range of devices using superconductive resonators such as qubits or kinetic inductance detectors. We report here on measurements of TLS noise in hydrogenated amorphous silicon (a-Si:H) films deposited by plasma-enhanced chemical vapor deposition in superconductive lumped element resonators using parallel-plate capacitors. In conclusion, the TLS noise results presented in this article for two recipes of a-Si:H improve on the best results achieved in the literature by a factor >5 for a-Si:H and other amorphous dielectrics and are comparable to those observed for resonators deposited on crystalline dielectrics.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2023

Noise-specific beating in the higher-level Ramsey curves of a transmon qubit

We report: in the higher levels of superconducting transmon devices and more generally charge sensitive devices, T 2 * measurements made in the presence of low-frequency time-correlated 1/f charge noise and quasiparticle-induced parity flips can give an underestimation of the total dephasing time. The charge variations manifest as beating patterns observed in the overlay of several Ramsey fringe curves and are reproduced with a phenomenological Ramsey curve model, which accounts for the charge variations. T 2 * dephasing times, which more accurately represent the total dephasing time, are obtained. The phenomenological model is compared with a Lindblad master equation model. Both models are found to be in agreement with one another and the experimental data. Finally, the phenomenological formulation enables a simple method in which the power spectral density for the low-frequency noise can be inferred from the overlay of several Ramsey curves.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
NASA NTRS1977

Superconducting thermometer for cryogenics

Digital electronic device uses superconducting filaments as sensors. Simple solid-state circuitry combined with filaments comprise highly-reliable temperature monitor. Device has ability to track very fast thermal transients and "on/off" output is adaptable to remote sensing and telemetry.

White, F. A.↗
DOE OSTI2023

Commissioning, Performance, and Effect of the Quench Current-Boosting Device on a Dedicated Superconducting Magnet

Superconducting magnet training is one of the accelerator related issues attracting attention due to significant operational costs and time budget associated to it. It is especially worrisome that magnets based on the “next-generation” Nb 3 Sn technology are affected by long training. While various efforts are underway to better understand and resolve the problem a parallel path could also be investigated, a path bypassing the issue. Following the concept of fast induced over-current during magnet powering, FNAL has developed an upgradable capacitor-based device to discharge through a superconducting magnet at quench detection or operator chosen time. The 0.4 F/1 kV device has been tested on a 1-m-long dipole-coil in a “mirror” magnet configuration and conclusive results on magnet training elimination have been observed. Here in this paper we discuss the main characteristics of the device, compare simulated response and actual performance, elaborate on test drivers and outcomes. Next steps and perspectives for future use are debated.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
NASA NTRS2006

Using Quasiparticle Poisoning To Detect Photons

According to a proposal, a phenomenon associated with excitation of quasiparticles in certain superconducting quantum devices would be exploited as a means of detecting photons with exquisite sensitivity. The phenomenon could also be exploited to perform medium-resolution spectroscopy. The proposal was inspired by the observation that Coulomb blockade devices upon which some quantum logic gates are based are extremely sensitive to quasiparticles excited above the superconducting gaps in their leads. The presence of quasiparticles in the leads can be easily detected via the charge states. If quasiparticles could be generated in the leads by absorption of photons, then the devices could be used as very sensitive detectors of electromagnetic radiation over the spectral range from x-rays to submillimeter waves. The devices in question are single-Cooper-pair boxes (SCBs), which are mesoscopic superconducting devices developed for quantum computing. An SCB consists of a small superconducting island connected to a reservoir via a small tunnel junction and connected to a voltage source through a gate capacitor. An SCB is an artificial two-level quantum system, the Hamiltonian of which can be controlled by the gate voltage. One measures the expected value of the charge of the eigenvectors of this quantum system by use of a radio-frequency single-electron transistor. A plot of this expected value of charge as a function of gate voltage resembles a staircase that, in the ideal case, consists of steps of height 2 e (where e is the charge of one electron). Experiments have shown that depending on the parameters of the device, quasiparticles in the form of "broken" Cooper pairs present in the reservoir can tunnel to the island, giving rise to steps of 1 e. This effect is sometimes called "poisoning." Simulations have shown that an extremely small average number of quasiparticles can generate a 1-e periodic signal. In a device according to the proposal, this poisoning would be turned to advantage. Depending on the wavelength, an antenna or other component would be used to couple radiation into the reservoir, wherein the absorption of photons would break Cooper pairs, thereby creating quasiparticles that, in turn, would tunnel to the island, creating a 1-e signal. On the basis of conservative estimates of device parameters derived from experimental data and computational simulations that fit the data, it has been estimated that the noise equivalent power of a device according to the proposal could be as low as 6 10(exp -22) W/Hz(exp 1/2). It has also been estimated that the spectroscopic resolution (photon energy divided by increment of photon energy) of such a device in visible light would exceed 100.

Echternach, Pierre↗
DOE OSTI2025

Robust and symmetric magnetic field dependency of superconducting diode effect in asymmetric Dirac semimetal SQUIDs

The recent demonstration of the superconducting diode effect (SDE) has generated renewed interest in superconducting electronics, in which devices such as compact superconducting diodes that can perform signal rectification with low-energy operations are needed. In this article, we present our results of robust and symmetric-in-magnetic-field SDE in asymmetric superconducting quantum interference devices (SQUIDs) realized in high-quality Dirac semimetal Cd 3 As 2 thin film grown by the molecular beam epitaxy technique. Consistent with previous work, a zero magnetic field SDE is observed. Furthermore, the difference in switching current is independent of the strength and polarity of an out-plane magnetic field in the range of −10 and 10 mT. We speculate that this robust symmetric-in-field SDE in our Dirac semimetal SQUIDs is due to the formation of helical spin texture, theoretically predicted in Dirac semimetals.

Current-voltage characteristic↗
DOE OSTI2022

Correlation between thickness dependent nanoscale structural chemistry and superconducting properties of ultrathin epitaxial NbN films

NbN-based superconductors have attracted interest for superconducting circuits, quantum computation and high frequency devices. The superconducting properties of NbN films are predominately reliant on the microstructure, therefore, an atomic-level understanding of the structure-chemistry is required to achieve high quality epitaxial NbN films. Here, in this study, the thickness-dependent superconducting properties of NbN films (5, 10, and 50 nm) within NbN/AlN/Al 2 O 3 heterostructures are investigated. NbN and AlN were epitaxially grown by an industrial scale physical vapor deposition technique. The role of nanoscale chemistry on the ultrathin NbN superconducting film is investigated at the atomic level for the first time via atom probe tomography, providing three-dimensional atomic distribution, chemical homogeneity, effect of impurities, specially, in secondary phase formations and interfacial abruptness. The NbN film with 5 nm of thickness demonstrates a superconducting transition temperature of 11.2 K as compared to 50 nm NbN films with a transition temperature of 15.3 K. These thickness dependent variation of superconducting properties are associated with the chemical inhomogeneity in terms of in-plane N:Nb distribution, secondary phase formations and NbN/AlN interfacial abruptness as a function of the NbN films thicknesses. The analysis depicts the interplay between the surface/interface and the superconducting properties of ultrathin NbN films. These results provide insights on material design and growth that will enable the development of optimized superconducting NbN films for quantum devices.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Synthesis and electrical transport properties of superconducting platinum silicide thin films and devices

Here, we evaluate the material characteristics of superconducting platinum silicide (PtSi) thin films as candidate materials for superconducting quantum information devices compatible with silicon technology. These films were synthesized using magnetron sputtering under ultrahigh vacuum conditions, followed by rapid thermal annealing. Polycrystalline PtSi films synthesized by this method have the favorable properties of superconducting critical temperature of 0.95 K and relatively long zero-temperature Ginzburg-Landau coherence length of 76 nm. We further studied coplanar microbridge devices fabricated by electron beam lithography and chlorine-free reactive ion etching, finding that the temperature-dependent critical current density follows the Ginzburg Landau depairing mechanism.

36 MATERIALS SCIENCE↗